Abstract: Provided is an ink composition for implementing a hidden-type emblem or lettering that emits light in an emblem or lettering form by reflecting external light, without having a light source inside the emblem.

Abstract: A display device includes: a display panel and an optical member positioned on the display panel. The optical member includes: a polarization layer positioned on the display panel; a first compensation layer positioned between the display panel and the polarization layer; a second compensation layer positioned between the display panel and the first compensation layer; a third compensation layer positioned between the display panel and the second compensation layer; and a fourth compensation layer positioned between the display panel and the third compensation layer. The first compensation layer is a positive C plate and a thickness direction phase delay value of the first compensation layer is about ?65 nm to about ?15 nm, and the second compensation layer is a positive A plate and an in-plane phase delay value of the second compensation layer is about 75 nm to about 125 nm.

Abstract: A method of fabricating nanostructures using macro pre-patterns according to the present invention, which comprises either depositing a target material on a substrate having macro pre-patterns formed thereon, or applying a target material to a substrate and then forming macro pre-patterns on the substrate, and then depositing the target material on the side surface of the macro pre-patterns by an ion bombardment phenomenon occurring during etching, provides a three-dimensional nanostructures with high aspect ratio and uniformity can be fabricated by a simple process at low cost by using the ion bombardment phenomenon occurring during physical ion etching, thereby achieving the high performance of future nano-devices, such as nanosized electronic devices, optical devices, bio devices and energy devices.

Abstract: An apparatus for controlling temperature and pressure may include: a shaft installed in an aircraft, the shaft being rotatable by having a motor coupled thereto; a compressor, rotatable by being connected to the shaft, configured to form a flow of heated compressed air by compressing external air introduced into the aircraft; a heat exchanger configured to heat-exchange the heated compressed air with a portion of external air introduced into the aircraft; a turbine, rotatable by being connected to the shaft, configured to form a flow of cooling air by expanding the heat-exchanged compressed air; and a cooling heat exchanger configured to exchange heat between a refrigerant cooling a fuel cell power train in the aircraft and the cooling air.

Abstract: A lighting apparatus for vehicles which may provide a unique and beautiful image of an electrified vehicle and aesthetic sensibility, and a method of manufacturing the same, include a light source configured to emit light, a light guide plate configured to diffuse the light emitted by the light source, and a lens cover configured to transmit the light diffused by the light guide plate and to emit the light forwards of the light cover, and irregularities configured to form thickness differences of the lens cover depending on a position on the lens cover or a portion of the lens cover are formed on an internal surface of the lens cover configured so that light having passed through the light guide plate is incident thereupon.

Abstract: The present disclosure relates to a resin composition and relates to a resin composition having excellent heat resistance and impact resistance and accomplishing the high degree of blackness.

Abstract: A method of manufacturing a semiconductor device includes forming a mold layer on a semiconductor wafer having a plurality of integrated circuit die at least partially defined therein. An etch stopper film is selectively formed on a second portion of the mold layer extending adjacent a periphery of the semiconductor wafer, but not on a first portion of the mold layer extending opposite at least one of the plurality of integrated circuit die. A preliminary pattern layer is formed on the etch stopper film and on the first portion of the mold layer. A plurality of patterns are formed in the preliminary pattern layer by selectively exposing the preliminary pattern layer to extreme ultraviolet light (EUV). Then, hole patterns are selectively formed in the first portion of the mold layer, using the exposed preliminary pattern layer and the etch stopper film as an etching mask.

Abstract: A plastic composite includes a face sheet layer consisting of poly(methyl methacrylate) (PMMA) or acrylic styrene acrylonitrile (ASA); a long fiber injection (LFI) layer disposed on a lower surface of the face sheet layer and consisting of polyurethane foam including reinforcing fiber; and a rib pattern layer formed on a lower surface of the LFI layer and comprising a plurality of ribs.

Abstract: A method for manufacturing a semiconductor device, the method including forming a stack on a wafer, wherein the stack includes a plurality of layers of the stack, forming a photoresist pattern on the stack, determining whether a material of at least one layer among the plurality of layers of the stack has changed and whether at least one process among a plurality of processes for forming the plurality of layers of the stack has changed, changing a first wavelength for overlay measurement upon determination that the material of the at least one layer or the at least one process has changed, and measuring an overlay using the changed first wavelength for overlay measurement.

Abstract: A memory device is provided. The memory device comprises an internal clock generator configured to receive an external clock signal from a host and generate an internal clock signal in accordance with a chip enable signal, an internal enable signal generator configured to operate based on the internal clock signal and receive an external enable signal from the host and generate an internal enable signal, and a monitoring signal generator configured to output a monitoring signal that is generated based on at least one of the internal clock signal or the internal enable signal to the host.

Abstract: A method for inspecting a critical dimension may include providing a substrate, applying a photoresist on the substrate, variably irradiating a dose of light onto the photoresist, performing a photo process to develop the photoresist to form a photoresist pattern, performing an etching process using the photoresist pattern as an etching mask to form a plurality of patterns, measuring a width of each of the plurality of patterns and a spacing between adjacent ones of the plurality of patterns, and identifying a cause of a defect in the photo process based on the measured width and the measured spacing.

Abstract: A plastic composite comprises a face sheet layer, a reinforcement layer formed on an upper surface of the face sheet layer and including a first glass fiber and a polyurethane foam, and a LFI layer formed on an upper surface of the reinforcement layer and including a second glass fiber and a polyurethane foam.

Abstract: An image processing system, including an input interface configured to receive a first direction image corresponding to a view of a semiconductor device in a first direction, and a second direction image corresponding to a view of the semiconductor device in a second direction which intersects the first direction at a first height at which the first direction image is generated; a processor configured to perform an edge detection operation for detecting an edge based on the first direction image, and to perform an image binarization operation on the first direction image; and a learning device configured to compare a first line width obtained based on the image binarization operation, and a second line width obtained based on the second direction image through machine learning, and to learn a condition of the image binarization operation which maximizes a correlation between the first line width and the second line width.

Abstract: A semiconductor device manufacturing system includes a photolithography apparatus that performs exposure. On a semiconductor substrate including a chip area and a scribe lane area. An etching apparatus etches the exposed semiconductor substrate. An observing apparatus images the etched semiconductor substrate. A controller controls the photolithography apparatus and the etching apparatus. The controller generates a first mask pattern and provides the first mask pattern to the photolithography apparatus. The photolithography apparatus performs exposure on the semiconductor substrate using the first mask pattern. The etching apparatus performs etching on the exposed semiconductor substrate to provide an etched semiconductor substrate. The observing apparatus generates a first semiconductor substrate image by imaging the etched semiconductor substrate corresponding to the scribe lane area.

Abstract: A memory device is provided. The memory device comprises an internal clock generator configured to receive an external clock signal from a host and generate an internal clock signal in accordance with a chip enable signal, an internal enable signal generator configured to operate based on the internal clock signal and receive an external enable signal from the host and generate an internal enable signal, and a monitoring signal generator configured to output a monitoring signal that is generated based on at least one of the internal clock signal or the internal enable signal to the host.

Abstract: A semiconductor device includes a substrate including a first cell region, a second cell region adjacent to the first cell region in a first direction, and a comparison region adjacent the first and second cell regions in a second direction, a bit line in a first metal level on the substrate and extending in the first direction, and a first ground rail in a second metal level different from the first metal level. The first ground rail comprises a first sub-ground rail extending in the second direction on the first cell region, a second sub-ground rail extending in the second direction on the second cell region, a third sub-ground rail connecting the first sub-ground rail to the second sub-ground rail on the first and second cell regions, and a fourth sub-ground rail that branches off from the third sub-ground rail and extends in the second direction.

Abstract: A method of manufacturing a semiconductor device includes forming a mold layer on a semiconductor wafer having a plurality of integrated circuit die at least partially defined therein. An etch stopper film is selectively formed on a second portion of the mold layer extending adjacent a periphery of the semiconductor wafer, but not on a first portion of the mold layer extending opposite at least one of the plurality of integrated circuit die. A preliminary pattern layer is formed on the etch stopper film and on the first portion of the mold layer. A plurality of patterns are formed in the preliminary pattern layer by selectively exposing the preliminary pattern layer to extreme ultraviolet light (EUV). Then, hole patterns are selectively formed in the first portion of the mold layer, using the exposed preliminary pattern layer and the etch stopper film as an etching mask.

Abstract: A semiconductor device manufacturing system includes a photolithography apparatus that performs exposure. On a semiconductor substrate including a chip area and a scribe lane area. An etching apparatus etches the exposed semiconductor substrate. An observing apparatus images the etched semiconductor substrate. A controller controls the photolithography apparatus and the etching apparatus. The controller generates a first mask pattern and provides the first mask pattern to the photolithography apparatus. The photolithography apparatus performs exposure on the semiconductor substrate using the first mask pattern. The etching apparatus performs etching on the exposed semiconductor substrate to provide an etched semiconductor substrate. The observing apparatus generates a first semiconductor substrate image by imaging the etched semiconductor substrate corresponding to the scribe lane area.

Abstract: Disclosed herein is a truck, a deck gate for truck, and a method for manufacturing thereof. According to the present invention, the deck gate for truck has excellent impact strength, low plastic deformation rate, excellent molding property and thermal resistance, and reduces weight. Also, the deck gate for truck according to the present invention reduces weight of about 23% in comparison with a conventional steel and wood type deck gate for truck.

Abstract: An apparatus performs a method for providing a touch interface. The method includes receiving a touch input from a touch detection unit, detecting touch characteristics according to the touch input, and generating events different from each other according to the detected touch characteristics.