Abstract: A method of forming a silicon-germanium (SiGe) film for a gate electrode. In a metal gate manufacture process, as the content of germanium (Ge) is increased, the surface roughness of the silicon-germanium (SiGe) film is increased, which makes difficult to secure an acceptable electrical characteristic as well as a set-up. In order to solve these problems, a method includes the spraying with a high density silicon micro-crystallite capable of increasing the nucleus creation efficiency on a gate oxide using a plasma or a tungsten (W) filament before depositing a silicon-germanium (SiGe) film. Thus, as micro-crystalline grains are formed during a preliminary stage of the silicon-germanium (SiGe) film deposition, a silicon-germanium (SiGe) film can be deposited with a reduced surface roughness.

Abstract: A method of fabricating a semiconductor device using a damascene metal gate including the steps of forming a damascene gate oxide layer and a damascene gate electrode on a semiconductor substrate, forming a trench at an upper part of the damascene gate electrode by selectively etching a portion of the damascene gate electrode to a predetermined thickness, forming an insulating layer in the trench on the damascene gate electrode, forming an insulating interlayer on an upper surface of the entire structure, and forming a contact hole exposing a portion of the semiconductor substrate by selectively etching the insulating interlayer.