Abstract: The present invention relates to a dengue virus-specific siRNA, a double-stranded oligo RNA structure comprising the siRNA, and a composition for inhibiting dengue virus replication, which comprises the same, in which the double-stranded oligo RNA structure comprises a hydrophilic compound and hydrophobic compound conjugated to both ends of the double-stranded RNA (siRNA) by a single covalent bond or a linker-mediated covalent bond so that they will be efficiently delivered into cells, and can be converted into nanoparticles by hydrophobic interactions between the double-stranded oligo RNA structures in an aqueous solution. The siRNA included in the double-stranded oligo RNA structure acts specifically on all dengue virus serotypes. The present invention also relates to a method for preparing the double-stranded oligo RNA structure, and a pharmaceutical composition for preventing or treating dengue virus infection, which comprises the double-stranded oligo RNA structure.

Abstract: Disclosed are a superconducting current-limiting element for a current limiter and a method of manufacturing a superconducting current-limiting element for a current limiter, in which the current-limiting element is formed in series by stacking linear superconducting wires, or is formed in parallel by stacking superconducting wires so that one or more superconducting wires are disposed in the same layer, thus facilitating the formation of the current-limiting element in series or in parallel and obviating the use of a winding machine when manufacturing the current-limiting element.

Abstract: Provided are a semiconductor device and a phase-locked loop (PLL) including the same. The semiconductor device including an output node from which an output signal is output, a first transistor which has a drain connected to the output node and is gated by a first signal to increase a voltage level of the output node, a second transistor which has a drain connected to the output node, is gated by a second signal which is a complementary signal of the first signal, and reduces the voltage level of the output node, a pull-up circuit which provides a first compensation current varying according to the voltage level of the output node to a source of the first transistor, and a pull-down circuit which provides a second compensation current varying according to the voltage level of the output node to a source of the second transistor.

Abstract: A semiconductor apparatus that includes: a first high-voltage transistor having a gate and a first electrode, wherein the first electrode is connected to a first pad and a parasitic capacitance forms between the gate and the first electrode; and a clamping circuit that is connected to the gate of the first high-voltage transistor, wherein the clamping circuit detects a change in a level of a gate voltage of the first high-voltage transistor due to electrostatic discharge, and clamps the gate voltage of the first high-voltage transistor according to a result of the detection.

Abstract: A frequency doubler includes a voltage controlled oscillator outputting N (where, N is a natural number) signals having a first period and having different phases, and an XOR circuit receiving the N signals and outputting a signal having a second period that corresponds to a half of the first period, wherein the voltage controlled oscillator includes N nodes that correspond to the N signals and inverter units respectively connecting the N nodes, the N nodes are arranged so that, if a signal that starts from any one start node of the N nodes passes through the same number of the inverter units, it recurs to the corresponding start node, the XOR gate includes a first unit block set including N unit blocks that are connected to the same output node and match the N nodes in a one-to-one manner, and a second unit block set that is substantially the same as the first unit block set, wherein the first and second unit block sets share the output node.

Abstract: A circuit for driving a gate of a power MOS transistor includes an adaptive pull-up unit and an adaptive pull-down unit. The adaptive pull-up unit is connected between a first power source voltage and the gate of the power MOS transistor. The adaptive pull-up unit maximizes pull-up current driving ability. The adaptive pull-down unit is connected between a second power source voltage and the gate of the power MOS transistor. The adaptive pull-down unit maximizes pull-down current driving ability.

Abstract: Disclosed herein is a method for manufacturing a light emitting diode (LED) module, the method including: disposing a circuit board at a molding space formed by an upper mold and a lower mold; adding a filling material to the molding space; hardening the filling material to form a molding cover covering at least a portion of an upper surface, a lower surface, and a side surface of the circuit board, the molding cover having an opening exposing the lower surface of the circuit board; removing the upper mold and the lower mold from the circuit board; and disposing an LED on the upper surface of the circuit board.

Abstract: Temperature sensing circuits are provided. The temperature sensing circuits may include a temperature sensing unit and a buffer unit. The temperature sensing unit may include a transistor that has a first pair of terminals having a first PN junction of the transistor therebetween and a second pair of terminals having a second PN junction of the transistor therebetween. The first pair of terminals are connected together. The temperature sensing unit may output a first temperature sensing voltage comprising a voltage between the second pair of terminals at a first node. The buffer unit may be connected to the first node. The buffer unit may have a cascode follower structure and may output a second temperature sensing voltage that has a magnitude proportional to a magnitude of the first temperature sensing voltage at a second node.

Abstract: A display apparatus and method thereof, in which accounts log in when a group account logs in, and an image of an account service for the logged-in accounts is displayed. The apparatus includes a communicator to communicate with a server that offers an account service, a storage to store login information about the accounts and a group account for the accounts, an image processor to process an image of the account service, a displayer to display the processed image, and a controller to make the accounts log in using the login information about the accounts for the group account when the group account logs in, and control the displayer to display an image of the account service for the logged-in accounts. With this, multi-accounts can be quickly logged in/out through simultaneous login/logout of multiple accounts under the condition that multi-login is possible in the display apparatus used by multiple users.

Abstract: A light emitting diode (LED) module including: a circuit board; at least one LED disposed on the circuit board; a molding cover spaced apart from the LED by a predetermined gap and covering upper and lower surfaces of the circuit board at an edge of the circuit board; and a circuit part positioned at the edge of the circuit board and driving the LED. The LED is centrally disposed on an upper surface of the circuit board.

Abstract: Apparatuses and methods related to a display apparatus and a control method of the same are provided. More particularly, the apparatuses and methods relate to a display apparatus which displays a common service for a plurality of user accounts and a control method of the same. A display apparatus includes: a communication section which communicates with a server offering a predetermined account service; a user input section which receives a login by a user of a user account with regard to the account service; a controller which determines whether to display combination service information where account service information corresponding to the user and account service information corresponding to at least one user different from the user are combined; and a display section which displays the combination service information based on the determination.

Abstract: A cooling system of a vehicle may include a high and low temperature radiators that cool a high and low temperature coolants respectively circulating an engine and passing a water cooled intercooler and a low exhaust gas recirculation cooler of a turbo charger, a cooling fan that blows air to the high temperature radiator and the low temperature radiator, a high temperature coolant pump that pumps the high temperature coolant, a low temperature coolant pump that pumps the low temperature coolant, and a control portion that controls the high temperature coolant pump, the low temperature coolant pump, and the cooling fan according to driving conditions of the vehicle and environmental conditions. A controlling method may include detecting driving conditions of the vehicle and environmental conditions, setting an operating target for the cooling system and/or a lubrication system, and determining operating conditions for the cooling system and/or the lubrication system.

Abstract: A method for measuring critical current density of superconductor wires according to the present invention is characterized in that it includes: (a) applying an external magnetic field to the superconductor wires, (b) measuring a magnetization loss of the superconductor wires according to the application of the external magnetic field, (c) normalizing the measured magnetization loss, and then calculating a fully-penetration magnetic field of the superconductor wires according to the normalized magnetization loss, (d) calculating a critical current density of the superconductor wires according to the calculated fully-penetration magnetic field. Therefore, the critical current density of parallel superconductor wires such as stacked superconductor wires may be measured without applying current to the superconductor wires directly.

Abstract: A turbo apparatus using a waste heat recovery system for a vehicle may include a waste heat recovery unit heating a working fluid by using waste heat of the vehicle, and an expander provided in a turbocharger and fluid-connected to the waste heat recovery unit, wherein the expander generates a rotational force by using the working fluid supplied from the waste heat recovery unit thereto and transmits the rotational force to a turbo shaft.

Abstract: A semiconductor apparatus that includes: a first high-voltage transistor having a gate and a first electrode, wherein the first electrode is connected to a first pad and a parasitic capacitance forms between the gate and the first electrode; and a clamping circuit that is connected to the gate of the first high-voltage transistor, wherein the clamping circuit detects a change in a level of a gate voltage of the first high-voltage transistor due to electrostatic discharge, and clamps the gate voltage of the first high-voltage transistor according to a result of the detection.

Abstract: A circuit for driving a gate of a power MOS transistor includes an adaptive pull-up unit and an adaptive pull-down unit. The adaptive pull-up unit is connected between a first power source voltage and the gate of the power MOS transistor. The adaptive pull-up unit maximizes pull-up current driving ability. The adaptive pull-down unit is connected between a second power source voltage and the gate of the power MOS transistor. The adaptive pull-down unit maximizes pull-down current driving ability.

Abstract: A duty correcting circuit includes a duty steerer circuit, a differential clock generator, and a charge pump circuit. The duty steerer circuit corrects a duty cycle of an input clock signal in response to a duty control signal and generates an output clock signal. The differential clock generator generates two internal clock signals having a phase difference of 180° from each other based on the output clock signal. The charge pump circuit performs a charge pump operation in a differential mode in response to the internal clock signals to generate a duty control signal.

Abstract: A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.

Abstract: Provided are the generation and the use of user generated contents (UGC) to which a creative commons license (CCL) is applied. In a method of generating digital contents, a user interface window including a clause for managing digital contents copyright information and displaying the user interface window is generated, and digital contents including copyright information selected from the displayed user interface window is generated.

Abstract: Provided is a multiple transposition method for superconducting wire, by making each superconducting wire unit from second-generation superconducting wires that were firstly transposed and then transposing each superconducting wire unit in such a manner that the phase of each unit can be changed along the length, comprising preparing wires by making curves on superconducting wires in such a manner that the superconducting wires of a thin multiple layer grown epitaxially are slit in zigzags and then making the curves repeatedly and by machining the wires with a desired length; making first-transposed superconducting wire units by combining a plurality of the prepared wires such that curves of adjacent wires come in touch to each other and are superposed; preparing a superconducting wire unit bundle by arranging the first-transposed superconducting wires units and by locating a plurality of the first-transposed superconducting wire units in parallel along the length; and making a second transposition on the fir