Abstract: The present invention relates to a high voltage-type redox flow battery comprising: a plurality of modules (1001, 1002, 1003, . . , 100n) which are serially connected; and a battery management system (BMS) for monitoring a state-of-charge (SOC) of each of the plurality of modules (1001, 1002, 1003, ..

Abstract: Disclosed are a solid electrolyte and method of manufacturing the same. The solid electrolyte may include a core including a first electrolyte represented by Chemical Formula 1, and a shell including a second electrolyte represented by Chemical Formula 2, and disposed on a surface of the core. LiaPSbX1c??[Chemical Formula 1] Here, a satisfies an equation 4?a?7, b satisfies an equation 3?b?7, c satisfies an equation 0?c?2, and X1 includes Br or I. LidPSeX2f??[Chemical Formula 2] Here, d satisfies an equation 4?d?7, e satisfies an equation 3?e?7, f satisfies an equation 0?f?2, X2 includes Cl or Br, and an ionic radius of X1 is greater than an ionic radius of X2.

Abstract: A memory module includes a first rank, a second rank and a test control unit. The first rank includes a plurality of semiconductor memory devices configured to operate in response to a first chip selection signal. The second rank includes a plurality of semiconductor memory devices configured to operate in response to a second chip selection signal. The test control unit is configured to simultaneously enable the first and second chip selection signals to test the first and second ranks in a test mode.

Abstract: A semiconductor package having a structure in which heat produced in the interior of the package is effectively spread to the outside of the package is provided. The semiconductor package includes one or more semiconductor chips, one or more substrates (PCBs) having the semiconductor chips respectively attached thereto, a plurality of conductive balls such as a plurality of solder balls to provide voltages and signals to the one or more semiconductor chips, and a heat sink positioned to spread heat produced in the interior of the package to the outside and directly connected to at least one of the plurality of solder balls.

Abstract: A memory module includes a first rank, a second rank and a test control unit. The first rank includes a plurality of semiconductor memory devices configured to operate in response to a first chip selection signal. The second rank includes a plurality of semiconductor memory devices configured to operate in response to a second chip selection signal. The test control unit is configured to simultaneously enable the first and second chip selection signals to test the first and second ranks in a test mode.

Abstract: A test device is provided. The test device includes a first via which transmits a supply voltage, a second via which transmits a ground voltage, a test board including a plurality of test signal vias for transmitting a plurality of test signals, a capacitor disposed on an upper part of the test board and connected between the first via and the second via, and a test socket which electrically connects a device under test (DUT) with the test board. The test socket includes a first region including a flat lower surface bordering the test board, a second region including an uneven lower surface, a plurality of first contactors which are disposed in the first region and which are connected to the plurality of vias, and two second contactors which are disposed in the second region and which are connected to two terminals of the capacitor.

Abstract: A semiconductor package having a structure in which heat produced in the interior of the package is effectively spread to the outside of the package is provided. The semiconductor package includes one or more semiconductor chips, one or more substrates (PCBs) having the semiconductor chips respectively attached thereto, a plurality of conductive balls such as a plurality of solder balls to provide voltages and signals to the one or more semiconductor chips, and a heat sink positioned to spread heat produced in the interior of the package to the outside and directly connected to at least one of the plurality of solder balls.

Abstract: A semiconductor package having a structure in which heat produced in the interior of the package is effectively spread to the outside of the package is provided. The semiconductor package includes one or more semiconductor chips, one or more substrates (PCBs) having the semiconductor chips respectively attached thereto, a plurality of conductive balls such as a plurality of solder balls to provide voltages and signals to the one or more semiconductor chips, and a heat sink positioned to spread heat produced in the interior of the package to the outside and directly connected to at least one of the plurality of solder balls.

Abstract: A power-up/power-down detecting circuit may include a power detecting circuit, a selecting circuit, and a determining circuit. The power detecting circuit may generate a plurality of detection signals based on a plurality of sensing signals corresponding to currents flowing through a plurality of function blocks. The selecting circuit may generate a plurality of selection signals. The determining circuit may generate a power-up completion signal and a power-down completion signal. A semiconductor device having the power-up/power-down detecting circuit may determine in real time the power-up time and the power-down time.

Abstract: A test apparatus capable of detecting input/output (I/O) circuit characteristics of a semiconductor device by analyzing an eye mask generated in the test apparatus and the waveform of a test signal output from the I/O circuit of the semiconductor device. The test apparatus includes an eye mask generator that generates an eye mask in synchronization with one or more clock signals of opposite phase to each other, an error detector that receives the eye mask from the eye mask generator and compares the test signal with the eye mask to determine whether an error occurs in the semiconductor device, and an error signal output unit that receives an error detection signal from the error detector and generates an error signal in response to the error detection signal.

Abstract: A semiconductor driver circuit includes impedance units for generating impedances at data pads, independently of each-other. Thus, signal swing widths of data signals generated at the data pads may be easily adjusted to be substantially equal for high operating speed. The semiconductor driver circuit also includes switching units for uncoupling at least one of the impedance units from at least one of the data pads for enhanced testing of the data pads.

Abstract: Provided are a semiconductor device, a test board, and a test system and method for testing a semiconductor device. The semiconductor device includes an input terminal to which test pattern data is serially input at a first speed and an output terminal which one-to-one corresponds to the input terminal and serially outputs the test pattern data to the outside at a second speed that is different from the first speed.

Abstract: The present invention provides a high-speed memory device that can be easily tested using the existing low-speed Automatic Test Equipment (ATE). In an embodiment of the invention, a memory device includes two channels. During normal communications with a host, one channel is used for bi-directional communications with a host. But during a test mode, a first channel is used to communicate with the ATE in one direction, and a second channel is used to communicate with the ATE in the opposite direction. The present invention also provides a memory module and a method for controlling the high-speed memory device.

Abstract: A socket for an electrical tester is disclosed. The socket includes a first contact board being arranged at a bottom side of a test object, and a second contact board being arranged at a top side of the test object. The first contact board includes a first contact member and a first conductive connection member, wherein the first contact member is electrically connected to a bottom connection terminal formed on the bottom side of the test object, and the first conductive connection member is isolated from the test object. The second contact board includes a second contact member, wherein the second contact member is electrically connected to the first conductive connection member and a top connection terminal formed on a top side of the test object, respectively. Therefore, the socket can have a simple configuration for providing the test current.

Abstract: A stack-type semiconductor package socket may include: a first package connection portion for connection with leads of a lowermost package of a stack-type semiconductor package; a second package connection portion for connection between pads of an odd-numbered package and leads of an even-numbered package, wherein the odd-numbered package and the even-numbered package are adjacent to each other; a lower case for fixing the first package connection portion; and an upper case for fixing the second package connection portion.

Abstract: A semiconductor package having a structure in which heat produced in the interior of the package is effectively spread to the outside of the package is provided. The semiconductor package includes one or more semiconductor chips, one or more substrates (PCBs) having the semiconductor chips respectively attached thereto,a plurality of conductive balls such as a plurality of solder balls to provide voltages and signals to the one or more semiconductor chips, and a heat sink positioned to spread heat produced in the interior of the package to the outside and directly connected to at least one of the plurality of solder balls.

Abstract: The present invention provides a high-speed memory device that can be easily tested using the existing low-speed Automatic Test Equipment (ATE). In an embodiment of the invention, a memory device includes two channels. During normal communications with a host, one channel is used for bidirectional communications with a host. But during a test mode, a first channel is used to communicate with the ATE in one direction, and a second channel is used to communicate with the ATE in the opposite direction. The present invention also provides a memory module and a method for controlling the high-speed memory device.

Abstract: A power-up/power-down detecting circuit may include a power detecting circuit, a selecting circuit, and a determining circuit. The power detecting circuit may generate a plurality of detection signals based on a plurality of sensing signals corresponding to currents flowing through a plurality of function blocks. The selecting circuit may generate a plurality of selection signals. The determining circuit may generate a power-up completion signal and a power-down completion signal. A semiconductor device having the power-up/power-down detecting circuit may determine in real time the power-up time and the power-down time.

Abstract: A stack-type semiconductor package socket may include: a first package connection portion for connection with leads of a lowermost package of a stack-type semiconductor package; a second package connection portion for connection between pads of an odd-numbered package and leads of an even-numbered package, wherein the odd-numbered package and the even-numbered package are adjacent to each other; a lower case for fixing the first package connection portion; and an upper case for fixing the second package connection portion.