Abstract: An organic light emitting display device and a method of fabricating the same are provided. A trench is formed in a planarization layer, and then a first electrode is formed to have opposite ends in the trench, thereby reducing a height difference between the planarization layer and the first electrode. That is, the thickness of a pixel defining layer formed on the first electrode may be reduced by reducing or minimizing protrusion of the first electrode with respect to the planarization layer. Thus, transfer efficiency can be increased when an organic layer is formed by a laser induced thermal imaging method, and reliability of a device can be improved by reducing or preventing thermal damage of the organic layer and open defects.

Abstract: In a method of repairing a display panel, only a defective portion of the display panel is lighted. Heat generated from the lighted defective portion is detected to obtain a position of a defect in the defective portion. A laser is irradiated onto the defective portion to repair the defective portion. The heat generated from the lighted shorted portion is detected using infrared light to obtain an accurate position of the defect in the shorted portion. Thus, an invisible minute defect such as a tiny short can be accurately repaired, so that a yield of the display panel is improved.

Abstract: An organic light emitting display device (OLED) and a method of fabricating the same. The OLED includes: a substrate; a thin film transistor on the substrate and including a source electrode and a drain electrode; a first insulating layer on the substrate; a second insulating layer on the first insulating layer and including a trench; a via hole formed in the trench over the first and second insulating layers and exposing a portion of the source electrode or the drain electrode; a first electrode in the trench and connected to one of the source electrode and the drain electrode through the via hole; a pixel defining layer on the first electrode and having an opening exposing the first electrode; an organic layer in the opening and having at least an organic emission layer; and a second electrode on an entire surface of the substrate having the organic layer.

Abstract: Provided is a flat display device, and more particularly, an active matrix (AM) flat display device having a thin film transistor (TFT). The flat display device includes a substrate, a plurality of TFTs (thin film transistors) provided on the substrate, each TFT comprising an active layer, a source electrode and a drain electrode that contact the active layer, and an ohmic contact layer interposed between the active layer and the source and drain electrodes, and a light emitting device electrically connected to the TFT, wherein the ohmic contact layer and a layer including the source and drain electrodes are formed to have the same pattern.

Abstract: A flat panel display with an integrated touch screen panel according to an embodiment of the present invention includes: an upper substrate and a lower substrate; a plurality of sensing patterns in a display region of the upper substrate facing the lower substrate; a plurality of sensing lines coupled with the sensing patterns, respectively, in a first non-display region of the upper substrate; a sensing pad unit including a plurality of sensing pads coupled with the sensing lines, at a second non-display region of the upper substrate; a sealant between the upper substrate and a second non-display region of the lower substrate; seal patterns protruding from and perpendicular to the sealant in a region overlapping the sensing pads, the seal patterns being between the sensing pads; and a plurality of metal patterns at the second non-display region of the lower substrate overlapping the regions between the seal patterns.

Abstract: A flat panel display device, more particularly, an Organic Light Emitting Diode (OLED) display device having uniform electrical characteristics and a method of fabricating the same include: a thin film transistor of which a semiconductor layer including a source, a drain, and a channel region formed in a super grain silicon (SGS) crystallization growth region; a capacitor formed in an SGS crystallization seed region; and an OLED electrically connected to the thin film transistor. Further, a length of the channel region of the silicon layer is parallel with the growth direction in the SGS growth region to improve the electrical properties thereof.

Abstract: An organic light emitting display device (OLED) and a method of fabricating the same. The OLED includes: a substrate; a thin film transistor on the substrate and including a source electrode and a drain electrode; a first insulating layer on the substrate having the source and drain electrodes; a second insulating layer on the first insulating layer and including a trench; a via hole formed in the trench over the first and second insulating layers and exposing a portion of the source electrode or the drain electrode; a first electrode in the trench and connected to one of the source electrode and the drain electrode through the via hole; a pixel defining layer on the first electrode and having an opening exposing the first electrode; an organic layer in the opening and having at least an organic emission layer; and a second electrode on an entire surface of the substrate having the organic layer.

Abstract: Provided are a thin film transistor (TFT) panel, a method of fabricating the same, and an organic light emitting display device (OLED) including the same. The TFT panel has a TFT region and a capacitor region. A TFT is formed in the TFT region and a capacitor is formed in the capacitor region. The TFT includes an active layer that includes a source and a drain regions. A gate insulation layer is formed on the active layer, and a gate electrode is formed on the gate insulation layer over the active layer. A source and a drain electrodes are formed over the active layer, and connected to the source and drain regions, respectively. In the TFT region, an interlayer insulation layer is formed between the gate electrode and the source/drain electrodes. In the capacitor region, an interlayer insulation layer is formed between a capacitor lower electrode and a capacitor upper electrode to form a capacitor.

Abstract: A touch screen panel that that is less susceptible to malfunction by static electricity. The touch screen panel includes: a transparent substrate; sensing cells formed on the transparent substrate, comprising: first sensing cells connected in a first direction; and second sensing cells connected in a second direction intersecting with the first direction; and connecting patterns formed on the transparent substrate, comprising: first connecting patterns connecting the first sensing cells in the first direction, and second connecting patterns connecting the second sensing cells in the second direction; wherein the sensing cells include prominences extending toward adjacent ones of the sensing cells.

Abstract: A structure for forming a touch screen panel directly on an upper substrate of a flat panel display device, and more particularly a touch screen panel integrated flat panel display device in which an insulating layer formed on the touch screen panel is implemented by a spin on glass (SOG layer having stable thermal property suitable for high temperature plastic process of a sealing material for encapsulating the upper substrate and a lower substrate of the flat panel display device, and a method of fabricating the same.

Abstract: An organic light-emitting display device includes a substrate; a gate electrode disposed on the substrate, the gate electrode including a first portion of a metal oxide layer and a metal layer; a pixel electrode disposed on the substrate and including a second portion of the metal oxide layer; a gate insulating layer covering the gate electrode; a semiconductor layer disposed on the gate insulating layer and including a channel region, and first and second regions disposed outside the channel region; a first electrode connected to the first region; a second electrode connected to the second region and the pixel electrode; an ohmic contact layer disposed between the first region and the first electrode and between the second region and the second electrode; a pixel defining layer including an opening exposing the pixel electrode; an organic light-emitting layer disposed on the pixel electrode; and an opposite electrode covering the organic light-emitting layer.

Abstract: A fabricating method of a touch screen panel, a transparent electrode layer and an insulating layer which are sequentially formed on a same surface of a transparent substrate. The transparent electrode layer and the insulating layer are co-patterned using a halftone mask to form a plurality of first sensing patterns connected along a first direction, a plurality of second sensing patterns having separated patterns between the first sensing patterns, and the insulating layer positioned on the first and second sensing patterns to expose regions of the second sensing patterns. A conductive layer is formed on the transparent substrate on which the first and second sensing patterns and the insulating layer are formed. The conductive layer is patterned to form second connection patterns allowing the second sensing patterns to be connected along a second direction through the exposed regions of the second sensing patterns.

Abstract: In a fabricating method of a touch screen panel, a conductive layer and an insulating layer are sequentially formed on a same surface of a transparent substrate. The conductive layer and the insulating layer are co-patterned using a halftone mask to form first connection patterns having separated patterns and the insulating layer being patterned on the first connection patterns to expose regions of the first connection patterns. A transparent electrode layer is formed on the transparent substrate having the first connection patterns and the insulating layer. The transparent electrode layer is patterned to form first sensing patterns connected to the first connection patterns through the exposed regions of the first connection patterns and connected along a first direction, and to form second sensing patterns disposed between the first sensing patterns, wherein the second sensing patterns are insulated from the first sensing patterns and connected along a second direction.

Abstract: An organic light emitting diode display includes: an organic light emitting display panel including a first substrate including an organic light emitting element and a second substrate combined with the first substrate; a touch substrate combined with the organic light emitting display panel; a first electrode pattern having a plurality of pads, formed on the touch substrate, and connected by an access unit in a first direction; a second electrode pattern having a plurality of pads; a wire electrically connected to one of the first electrode pattern and the second electrode pattern; an insulation layer formed on the first and second electrode patterns and including a contact hole; and a connection electrode disposed in the contact hole and electrically connecting pads of the second electrode pattern in a second direction crossing the first direction, wherein the first electrode pattern, the second electrode pattern, and the wire are formed simultaneously on the same plane.

Abstract: A thin film transistor, e.g., for use in an organic light emitting display, may include: a gate insulating layer disposed on a gate electrode located on a substrate; a semiconductor layer, disposed on the gate insulating layer; and a planarization layer disposed on the gate insulating layer, the source and drain electrodes, and the channel area, and having openings exposing parts of the first source and drain areas and the source and drain electrodes, respectively. The semiconductor layer may include: a channel area corresponding to the gate electrode; first source and drain areas doped with an impurity outside the channel area; second source and drain areas, including a metal, outside the first source and drain areas; and source and drain electrodes disposed on the second source and drain areas and exposing the first source and drain areas. A pixel electrode may be disposed in one of the openings.

Abstract: A thin film transistor (TFT) may include a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, and a semiconductor layer on the gate insulating layer. The semiconductor layer may include a top surface, a channel area aligned in a vertical direction with the gate electrode, a plurality of doped areas proximate to the channel area, and a plurality of non-doped areas. Source and drain electrodes may be on the top surface of the semiconductor layer aligned above respective ones of the plurality of non-doped areas of the semiconductor layer. A planarization layer may be on the gate insulating layer, the source and drain electrodes and the semiconductor layer channel area, and may include a plurality of openings respectively exposing the plurality of doped areas of the semiconductor layer and a portion of the source electrode and the drain electrode.

Abstract: An organic light-emitting display device includes a substrate; a gate electrode disposed on the substrate, the gate electrode including a first portion of a metal oxide layer and a metal layer; a pixel electrode disposed on the substrate so as to be insulated from the gate electrode, the pixel electrode including a second portion of the metal oxide layer; a gate insulating layer disposed on the substrate to cover the gate electrode; a semiconductor layer disposed on the gate insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, and first and second regions disposed outside the channel region; a first electrode connected to the first region of the semiconductor layer; a second electrode connected to the second region of the semiconductor layer and the pixel electrode; an ohmic contact layer disposed between the first region of the semiconductor layer and the first electrode and between the second region of the semiconductor layer and the second electrode; a p

Abstract: An organic light emitting display apparatus including: a substrate; a thin film transistor formed on the substrate; a planarization layer formed on the substrate to cover the thin film transistor and comprising a closed-loop groove; a pixel electrode that contacts the thin film transistor and is formed on the planarization layer; a pixel defining layer formed to fill the closed-loop groove; a spacer formed on the planarization layer and disposed outside the pixel electrode; an organic light emitting layer formed on the pixel electrode; and an opposite electrode covering the organic light emitting layer.

Abstract: An organic light-emitting display device includes a substrate; a gate electrode disposed on the substrate, the gate electrode including a first portion of a metal oxide layer and a metal layer; a pixel electrode disposed on the substrate so as to be insulated from the gate electrode, the pixel electrode including a second portion of the metal oxide layer; a gate insulating layer disposed on the substrate to cover the gate electrode; a semiconductor layer disposed on the gate insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, and first and second regions disposed outside the channel region; a first electrode connected to the first region of the semiconductor layer; a second electrode connected to the second region of the semiconductor layer and the pixel electrode; an ohmic contact layer disposed between the first region of the semiconductor layer and the first electrode and between the second region of the semiconductor layer and the second electrode; a p

Abstract: An organic light-emitting display device includes a substrate; a gate electrode disposed on the substrate, the gate electrode including a first portion of a metal oxide layer and a metal layer; a pixel electrode disposed on the substrate so as to be insulated from the gate electrode, the pixel electrode including a second portion of the metal oxide layer; a gate insulating layer disposed on the substrate to cover the gate electrode; a semiconductor layer disposed on the gate insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, and first and second regions disposed outside the channel region; a first electrode connected to the first region of the semiconductor layer; a second electrode connected to the second region of the semiconductor layer and the pixel electrode; an ohmic contact layer disposed between the first region of the semiconductor layer and the first electrode and between the second region of the semiconductor layer and the second electrode; a p