Abstract: An organic light emitting display apparatus including: a substrate; a thin film transistor formed on the substrate; a planarization layer formed on the substrate to cover the thin film transistor and comprising a closed-loop groove; a pixel electrode that contacts the thin film transistor and is formed on the planarization layer; a pixel defining layer formed to fill the closed-loop groove; a spacer formed on the planarization layer and disposed outside the pixel electrode; an organic light emitting layer formed on the pixel electrode; and an opposite electrode covering the organic light emitting layer.

Abstract: A thin film transistor (TFT) may include a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, and a semiconductor layer on the gate insulating layer. The semiconductor layer may include a top surface, a channel area aligned in a vertical direction with the gate electrode, a plurality of doped areas proximate to the channel area, and a plurality of non-doped areas. Source and drain electrodes may be on the top surface of the semiconductor layer aligned above respective ones of the plurality of non-doped areas of the semiconductor layer. A planarization layer may be on the gate insulating layer, the source and drain electrodes and the semiconductor layer channel area, and may include a plurality of openings respectively exposing the plurality of doped areas of the semiconductor layer and a portion of the source electrode and the drain electrode.

Abstract: A thin film transistor, e.g., for use in an organic light emitting display, may include: a gate insulating layer disposed on a gate electrode located on a substrate; a semiconductor layer, disposed on the gate insulating layer; and a planarization layer disposed on the gate insulating layer, the source and drain electrodes, and the channel area, and having openings exposing parts of the first source and drain areas and the source and drain electrodes, respectively. The semiconductor layer may include: a channel area corresponding to the gate electrode; first source and drain areas doped with an impurity outside the channel area; second source and drain areas, including a metal, outside the first source and drain areas; and source and drain electrodes disposed on the second source and drain areas and exposing the first source and drain areas. A pixel electrode may be disposed in one of the openings.

Abstract: Provided is a flat display device, and more particularly, an active matrix (AM) flat display device having a thin film transistor (TFT). The flat display device includes a substrate, a plurality of TFTs (thin film transistors) provided on the substrate, each TFT comprising an active layer, a source electrode and a drain electrode that contact the active layer, and an ohmic contact layer interposed between the active layer and the source and drain electrodes, and a light emitting device electrically connected to the TFT, wherein the ohmic contact layer and a layer including the source and drain electrodes are formed to have the same pattern.

Abstract: A flat panel display device, more particularly, an Organic Light Emitting Diode (OLED) display device having uniform electrical characteristics and a method of fabricating the same include: a thin film transistor of which a semiconductor layer including a source, a drain, and a channel region formed in a super grain silicon (SGS) crystallization growth region; a capacitor formed in an SGS crystallization seed region; and an OLED electrically connected to the thin film transistor. Further, a length of the channel region of the silicon layer is parallel with the growth direction in the SGS growth region to improve the electrical properties thereof.

Abstract: An organic light emitting display device including an anode having a multi-layer structure which can be manufactured using a simple process, has good hole transfer properties and high reflectivity, and prevents energy loss due to a drop in voltage. The organic light emitting display device includes a substrate, a thin film transistor formed on the substrate and including source and drain electrodes, a first anode patterned simultaneously with the source and drain electrodes of the thin film transistor, formed integrally with the source or drain electrode, and made out of a conductive material having a low resistance, a second anode formed on the first anode, and made out of a conductive material having a high work function, an organic layer formed on the second anode and a cathode formed on the organic layer.

Abstract: An organic light emitting display device in which a failure rate is reduced and thus product yield is improved, and a method of fabricating the same. The organic light emitting display device includes: a substrate; a thin film transistor disposed on the substrate, the thin film transistor including a semiconductor layer, a gate electrode, and source and drain electrodes; a first insulating layer disposed on the thin film transistor; an inorganic planarization layer disposed on the first insulating layer; a second insulating layer disposed on the inorganic planarization layer; a first electrode disposed on the second insulating layer, and electrically connected to the source and drain electrodes; an organic layer disposed on the first electrode, the organic layer including an emissive layer; and a second electrode disposed on the organic layer.

Abstract: An organic light emitting display device and a method of fabricating the same are provided. A trench is formed in a planarization layer, and then a first electrode is formed to have opposite ends in the trench, thereby reducing a height difference between the planarization layer and the first electrode. That is, the thickness of a pixel defining layer formed on the first electrode may be reduced by reducing or minimizing protrusion of the first electrode with respect to the planarization layer. Thus, transfer efficiency can be increased when an organic layer is formed by a laser induced thermal imaging method, and reliability of a device can be improved by reducing or preventing thermal damage of the organic layer and open defects.

Abstract: Provided are a thin film transistor (TFT) panel, a method of fabricating the same, and an organic light emitting display device (OLED) including the same. The TFT panel has a TFT region and a capacitor region. A TFT is formed in the TFT region and a capacitor is formed in the capacitor region. The TFT includes an active layer that includes a source and a drain regions. A gate insulation layer is formed on the active layer, and a gate electrode is formed on the gate insulation layer over the active layer. A source and a drain electrodes are formed over the active layer, and connected to the source and drain regions, respectively. In the TFT region, an interlayer insulation layer is formed between the gate electrode and the source/drain electrodes. In the capacitor region, an interlayer insulation layer is formed between a capacitor lower electrode and a capacitor upper electrode to form a capacitor.

Abstract: The present invention provides a photoresist composition and more particularly, a photoresist composition comprising a) a novolak resin, b) a diazide compound, and c) a solvent containing propylene glycol methyl ether acetate (PGMEA) and 2,2,4-triemthyl-1,3-penthanediolmonoisobutylate (TMPMB). The photoresist composition according to the invention has excellent coating uniformity and stain inhibitory properties after coating so that it can be easily applied to real industrial fields and it can improve working environments due to the reduction of amounts to be consumed, the decrease of time to be required for manufacture, etc. when manufactured on a large scale.

Abstract: An organic light emitting display device (OLED) and a method of fabricating the same. The OLED includes: a substrate; a thin film transistor on the substrate and including a source electrode and a drain electrode; a first insulating layer on the substrate having the source and drain electrodes; a second insulating layer on the first insulating layer and including a trench; a via hole formed in the trench over the first and second insulating layers and exposing a portion of the source electrode or the drain electrode; a first electrode in the trench and connected to one of the source electrode and the drain electrode through the via hole; a pixel defining layer on the first electrode and having an opening exposing the first electrode; an organic layer in the opening and having at least an organic emission layer; and a second electrode on an entire surface of the substrate having the organic layer.

Abstract: The present invention provides a photoresist composition and more particularly, a photoresist composition comprising a) a novolak resin, b) a diazide compound, and c) a solvent containing propylene glycol methyl ether acetate (PGMEA) and 2,2,4-triemthyl-1,3-penthanediolmonoisobutylate (TMPMB). The photoresist composition according to the invention has excellent coating uniformity and stain inhibitory properties after coating so that it can be easily applied to real industrial fields and it can improve working environments due to the reduction of amounts to be consumed, the decrease of time to be required for manufacture, etc. when manufactured on a large scale.