Abstract: A mask pattern for manufacturing a resist pattern of a semiconductor device through photolithography is provided with an additional mask pattern whose size is such that resist patterns are not formed after exposure on the spaces thereof. Using such a mask pattern, a manufacturing method of fine patterns enables the formation of specific patterns having an improved profile.

Abstract: A mask and a method for manufacturing the same, which can form a correct pattern on a semiconductor wafer having steps, includes a mask substrate having steps oppositely corresponding to steps on said semiconductor wafer and an opaque mask pattern for cutting off light from the mask substrate to thereby enable the same exposure focus to be provided to the step and non-step regions on the semiconductor wafer. Further, a clean and correct pattern can be formed by controlling the amount of exposure irradiated onto the step and non-step regions on the semiconductor wafer.

Abstract: A magnetic fluid pump prevents the generation of particles and impurities, and is useful where particles and impurities are to be kept to a minimum, for instance in a resist coating process for manufacturing a semiconductor device. A pair of solenoid coils are wound on the outer surface of both of the ends of a a fluid transporting pipe. Inside the transporting pipe is a magnetic cylinder having a valve attached to one end which opens and closes the fluid path. The magnetic cylinder reciprocates back and forth inside the transfer pipe by changing the current direction of the coils. Fluid can be pumped continuously by reciprocation of the magnetic cylinder. The pump suppresses the generation of particles and impurities. When used in a resist coating process, the formation of a resist pattern having a poor profile during the photolithography processing can be prevented.

Abstract: A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of .-+. first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.

Abstract: A method for forming a pattern improves a profile of a resist pattern. The method forms a photoresist layer on a substrate having a step, and exposes the photoresist layer using a first mask. Then, thick portions of the photoresist layer are exposed using a second mask, and the entire resist is developed. The second mask provides an additional increment of energy to thick regions so that no inadequately exposed resist material will remain near the step.

Abstract: A gas contamination measuring apparatus is equipped at the front side of the light path for detecting whether environmental contamination is present. The gas contamination measuring apparatus includes a nitrogen injecting inlet, a nitrogen exiting outlet, the quartz plate, an inside contamination detecting light emitting element and a photoreceiving element detecting light emitting element and a photoreceiving element and an outside contamination detecting light emitting element and a photoreceiving element.

Abstract: A method for forming an accurate pattern on a semiconductor element that has a step. The method includes the steps of coating a photosensitive material on the surface of the semiconductor, pre-exposing to ultraviolet rays the photosensitive material exisiting in the non-step area which is formed on the surface of the semiconductor other than step area, through a first photomask, exposing the entire photosensitive material through a second photomask with a desired pattern to ultraviolet after removing the first photomask, and developing and removing only photosensitive material that is exposed to ultraviolet in the pre-exposing and exposing steps.