Abstract: A wireless sensor device is disclosed. The wireless sensor device according to an aspect of the present disclosure may comprise: a sensor module which is placed adjacent to a part of an external member and is configured to sense information on a state of the member; a power module which is placed adjacent to another part of the external member to be physically spaced apart from the sensor module, and is configured to be electrically connected to the sensor module to transfer power to the sensor module; and a conducting wire member which is electrically connected to each of the sensor module and the power module to conduct the power.

Abstract: A content addressable memory device including a memory cell array including a plurality of memory cells, each of which has a ferroelectric tunnel field effect transistor (FeTFET), and a match amplifier connected to the plurality of memory cells through a plurality of match lines may be provided. The FeTFET includes a first doped region including a first conductivity type, a second doped region including a second conductivity type different from the first conductivity type, a channel region formed between the first doped region and the second doped region, and a gate formed on the channel region and including a ferroelectric layer.

Abstract: A vacuum packaging manufacturing method includes forming, on a silicon wafer, a lower layer including a first metal layer and a second metal layer formed on the first metal layer, forming anchor regions by etching parts of the second metal layer and depositing a dielectric layer on the second metal layer in which the anchor regions are formed, exposing a silicon oxide film by removing a partial region of the dielectric layer and removing silicon oxide inside the second metal layer covered by the dielectric layer through the removed partial region of the dielectric layer, and depositing an upper layer on the second metal layer and forming a third metal structure on the upper layer, wherein, as the upper layer is deposited on the second metal layer, a region from which the silicon oxide inside the second metal layer is removed is in a vacuum or subvacuum state.

Abstract: A method for testing a focusing characteristic of a camera may include setting a camera to align the camera and a first chart structured to provide a first scene for testing such that the camera is focused on the first chart disposed at a first distance from the camera, measuring a blur in an image of a second chart captured at a second distance from the camera, the second chart being structured to provide a second scene for testing, and evaluating a phase difference range (PDR) of the camera based on the measured blur and a blur calculated through a circle of confusion (CoC) model.

Abstract: An optical disc unit for an ultraviolet sterilizer, which is applied to the ultraviolet sterilizer, includes an ultraviolet light emitting diode (LED) to reflect light irradiated from the ultraviolet LED, including a body portion including a hollow and a primary optical unit fixedly coupled to an internal diameter surface in the hollow of the body portion and disposed in a direction perpendicular to an emission surface of the ultraviolet LED to reflect light irradiated from the ultraviolet LED, and according to an exemplary embodiment of the present disclosure, it is possible to enhance a sterilization ability by increasing a beam angle of light irradiated from the ultraviolet LED and uniformly irradiating the light and also reduce a risk of light leakage to the outside in a space to which the ultraviolet LED is applied.

Abstract: An electronic device includes a narrowband internet of things (NB-IoT) circuit; a shared central processor to control the narrowband internet of things circuit; a shared memory to store data or code from the shared central processor; and a communicator controlled by the shared central processor. The communicator stores the data or the code in the shared memory.

Abstract: A 3-dimensional flash memory device and methods of fabricating and driving the same are provided. The device includes: a channel layer extending over a substrate in a first direction perpendicular to a surface of the substrate; an information storing layer extending along a sidewall of the channel layer in the first direction; control gates each surrounding the channel layer, with the information storing layer between the channel layer and the control gates; an insulating layer being between the control gates in the first direction and separating the control gates from each other; a fixed charge region disposed at an interface of the insulating layer and the information storing layer or in a portion of the information storing layer between the control gates in the first direction; and a doped region induced by the fixed charge region and disposed at a surface of the channel layer facing the fixed charge region.

Abstract: An equipment for inspecting a secondary battery is provided. The equipment includes a loading device on which a secondary battery is loaded in an upright position, and a side portion inspecting device which inspects a side portion of the secondary battery loaded on the loading device, wherein the side portion inspecting device comprises an elevation unit which lifts the secondary battery loaded on the loading device so as to be withdrawn out of the loading device and allows the secondary battery to return to its original position after a first period of time elapses and a side portion inspecting unit which captures an image of the side portion of the secondary battery, which is withdrawn out of the loading device by the elevation unit, thereby inspecting the side portion of the secondary battery.

Abstract: An apparatus for monitoring a biological condition of pregnant breeding cattle includes a training data collection unit to select and use at least two of an implantable device, a wearable device or an imaging device as a training data collection device to create multiple training data, a prediction model training unit to pre-train a prediction model through the multiple training data, a device cooperation cases setting unit to decide and store device cooperation cases by collecting and analyzing sensing data acquired through the training data collection devices, a device cooperation conducting unit to preprocess the sensing data of a monitoring device according to the device cooperation cases when at least one of the training data collection devices is selected as the monitoring device, and a biological condition prediction unit to predict and output a biological condition corresponding to the sensing data preprocessed through the prediction model.

Abstract: Provided is a semiconductor memory device comprising an active region extending in a cell isolation layer, wherein the active region includes a first region and a second region; a bit line intersects the active region; a bit line contact between a substrate and the bit line, wherein the bit line contact is electrically connected to the first region; a bit line spacer that is on side surfaces of the bit line and the bit line contact; a node pad on a lateral side of the bit line spacer, wherein the node pad is electrically connected to the second region; a storage contact that is on the node pad and on a side surface of the bit line spacer, wherein the storage contact includes a first part having a first width and a second part having a second width different from the first width.

Abstract: The present disclosure relates to a contact monitoring device for a vacuum circuit breaker, which may compensate for errors of a contact monitoring device capable of monitoring a contact wear amount in a vacuum interrupter, and to a vacuum circuit breaker comprising same. According to the present disclosure, the contact monitoring device for a vacuum circuit breaker may determine an appropriate time for maintenance and repair by monitoring in real time a contact wear amount using a photosensor. Moreover, the contact monitoring device for a vacuum circuit breaker, by using two photosensors, minimizes position errors with respect to the photosensors or a push rod that may be present inherently in the sensors or occur due to an installation state, and thus, may detect the contact wear amount with precision.

Abstract: Disclosed is an image sensing device including a pixel array, wherein the pixel array includes a first sub-pixel array including pixels each having a green filter and disposed in a first diagonal direction, and pixels each having a white filter and disposed in a second diagonal direction, a second sub-pixel array including pixels each having the green filter and disposed in the first diagonal direction, and pixels each having the white filter and disposed in the second diagonal direction, a third sub-pixel array including pixels each having a red filter and disposed in the second diagonal direction, and pixels each having the white filter and disposed in the first diagonal direction, and a fourth sub-pixel array including pixels each having a blue filter and disposed in the second diagonal direction, and pixels each having the white filter and disposed in the first diagonal direction.

Abstract: An electronic device includes a narrowband internet of things (NB-IoT) circuit; a shared central processor to control the narrowband internet of things circuit; a shared memory to store data or code from the shared central processor; and a communicator controlled by the shared central processor. The communicator stores the data or the code in the shared memory.

Abstract: A semiconductor device including a device isolation layer defining an active region; a first trench in the device isolation layer; a second trench in the active region; a main gate electrode structure filling a portion of the first trench and including a first barrier conductive layer and a main gate electrode; a pass gate electrode structure filling a portion of the second trench and including a second barrier conductive layer and a pass gate electrode; a support structure filling another portion of the second trench above the pass gate electrode; a first capping pattern filling another portion of the first trench above the main gate electrode; and a second gate insulating layer extending along a bottom and sidewall of the second trench, wherein the second barrier conductive layer is between the second gate insulating layer and the pass gate electrode and extends along a bottom and sidewall thereof.

Abstract: An electronic device includes a narrowband internet of things (NB-IoT) circuit; a shared central processor to control the narrowband internet of things circuit; a shared memory to store data or code from the shared central processor; and a communicator controlled by the shared central processor. The communicator stores the data or the code in the shared memory.

Abstract: A touch input sensing device configured to be added to an electronic device, the electronic device including a touch input unit, the touch input unit including a first touch member integrated with a housing. The touch input sensing device includes a resonant circuit configured to generate a resonance signal having a resonant frequency that varies based on a touch of the touch input unit, a digital frequency counter configured to count a reference frequency signal based on the resonance signal, or count the resonance signal based on the reference frequency signal, to generate a count value, and a touch detector configured to detect whether the touch of the touch input unit has occurred based on the count value generated by the digital frequency counter, and output a touch detection signal indicating whether the touch has occurred.

Abstract: Disclosed are a temperature control method of an optical modulator and an apparatus therefore. The temperature control apparatus of an optical modulator according to an exemplary embodiment of the present disclosure is to provide a temperature control method of an optical modulator which performs a calibration mode to select a heater control voltage with a maximum optical modulation amplitude (OMA) while adjusting a heater control voltage which drives a heater of the optical modulator, stores a reference temperature measurement code based on a measured temperature value of the optical modulator while driving the heater at a selected heater control voltage, and performs a lock mode which controls a temperature of the optical modulator by changing the heater control voltage using the reference temperature measurement code after stopping the optical modulation amplitude detecting operation and an apparatus therefor.

Abstract: A method for testing a focusing characteristic of a camera may include setting a camera to align the camera and a first chart structured to provide a first scene for testing such that the camera is focused on the first chart disposed at a first distance from the camera, measuring a blur in an image of a second chart captured at a second distance from the camera, the second chart being structured to provide a second scene for testing, and evaluating a phase difference range (PDR) of the camera based on the measured blur and a blur calculated through a circle of confusion (CoC) model.

Abstract: Disclosed is an image sensing device including a pixel array, wherein the pixel array includes a first sub-pixel array including pixels each having a green filter and disposed in a first diagonal direction, and pixels each having a white filter and disposed in a second diagonal direction, a second sub-pixel array including pixels each having the green filter and disposed in the first diagonal direction, and pixels each having the white filter and disposed in the second diagonal direction, a third sub-pixel array including pixels each having a red filter and disposed in the second diagonal direction, and pixels each having the white filter and disposed in the first diagonal direction, and a fourth sub-pixel array including pixels each having a blue filter and disposed in the second diagonal direction, and pixels each having the white filter and disposed in the first diagonal direction.

Abstract: Disclosed is a content addressable memory device including a memory cell array including a plurality of memory cells, each of which has a ferroelectric tunnel field effect transistor (FeTFET), and a match amplifier connected to the plurality of memory cells through a plurality of match lines. The FeTFET includes a first doped region including a first conductivity type, a second doped region including a second conductivity type different from the first conductivity type, a channel region formed between the first doped region and the second doped region, and a gate formed on the channel region and including a ferroelectric layer.