Abstract: An image display device and a voice recognition method thereof are proposed. The image display device and voice recognition method thereof stores received first utterance data in a first buffer when a wake up word is recognized from utterance data, stores second utterance data consecutively uttered from a user in a second buffer, stores third utterance data consecutively uttered from the user in a third buffer when verification of the wake up word is successful on the basis of the first utterance data after booting of an operating system is completed, and joins the second uttered data and the third uttered data respectively stored in the second buffer and the third buffer, so as to perform voice recognition for the utterance data consecutively uttered by the user. Accordingly, including the commands uttered at intervals after the wake up word, user's commands that are consecutively uttered may be recognized.

Abstract: An embodiment of the present invention relates to an optical apparatus comprising: a first main body including first cover glass; a second main body including second cover glass and foldably connected to the first main body; a first optical module arranged in the first main body; and a second optical module which is arranged in the second main body and which overlaps with the first optical module in the optical axis direction when the first cover glass and the second cover glass are facing each other.

Abstract: A light emitting display device includes a display panel including a light emitting diode, a positive C plate disposed in front of the display panel, a positive A plate disposed in front of the positive C plate, a negative A plate disposed in front of the positive A plate, and a polarizer disposed in front of the negative A plate, wherein the polarizer includes, a polarizing layer having an absorption axis, and a negative C plate disposed between the polarizing layer and the negative A plate, wherein the positive C plate, the positive A plate, the negative A plate, and the negative C plate each have positive wavelength dispersion characteristics, and wherein the light emitting display device has negative wavelength dispersion characteristics at the front as a whole.

Abstract: A polarizing member includes a polarizer including an absorption axis and a transmission axis that intersect each other, a first retarder disposed under the polarizer, a second retarder disposed under the first retarder; and a third retarder disposed on the polarizer, where an in-plane retardation value of the third retarder ranges from approximately 37.5 nanometers (nm) to approximately 237.5 nm, and where an angle between a retardation axis of the third retarder and the transmission axis of the polarizer ranges from approximately 15 degrees (°) to approximately 75°.

Abstract: Provided is a molded product manufactured from a thermoplastic resin composition containing a polycarbonate-based polymer, a polysiloxane-polycarbonate copolymer, a polysiloxane-polyester copolymer, and a benzotriazole-based UV stabilizer having a molecular weight equal to or greater than about 1,800.

Abstract: Mixed strains composition capable of improving whey protein proteolysis and lactose intolerance, and more particularly mixed strains composition of Limosilactobacillus reuteri LM1071 (Accession Number: KCCM12650P) and Lactobacillus gasseri LM1065 (Accession Number: KCCM13018P), which is capable of degrading whey protein to branched chain amino acid (BCAA), arginine, and phenylalanine and improving lactose intolerance is proposed. A composition including mixed strains of Limosilactobacillus reuteri LM1071 (Accession Number: KCCM12650P) and Lactobacillus gasseri LM1065 (Accession Number: KCCM13018P) has excellent protein proteolysis and thus can produce BCAA (valine, leucine and isoleucine), arginine, and phenylalanine, which are helpful in forming muscles and suppressing muscle loss, by degrading whey proteins, and has excellent ?-galactosidase activity and thus can hydrolyze lactose.

Abstract: A positive electrode active material precursor includes Ni and Mn and secondary particles formed by the aggregation of a plurality of primary particles. The secondary particles have a ratio of a core area to a total area of the particles ranging from 28.7% to 34.1%, and a porosity ranging from 11.3% to 11.7%. Also provided is a method for preparing the positive electrode active material precursor. Additionally, a positive electrode active material including a reaction product of the positive electrode active material precursor and a lithium raw material is provided. Also provided is a method for preparing a positive electrode active material using the positive electrode active material precursor.

Abstract: The present invention relates to a catalyst for a hydrogenation reaction and a method for producing the same, and more specifically, to a catalyst for a hydrogenation reaction, wherein the catalyst includes nickel oxide as an active ingredient and copper oxide and sulfur oxide as a promoter, and especially, can control a reduction degree value according to whether or not a passivation layer of a nickel metal is removed.

Abstract: A method of manufacturing a semiconductor device includes forming a mold layer on a semiconductor wafer having a plurality of integrated circuit die at least partially defined therein. An etch stopper film is selectively formed on a second portion of the mold layer extending adjacent a periphery of the semiconductor wafer, but not on a first portion of the mold layer extending opposite at least one of the plurality of integrated circuit die. A preliminary pattern layer is formed on the etch stopper film and on the first portion of the mold layer. A plurality of patterns are formed in the preliminary pattern layer by selectively exposing the preliminary pattern layer to extreme ultraviolet light (EUV). Then, hole patterns are selectively formed in the first portion of the mold layer, using the exposed preliminary pattern layer and the etch stopper film as an etching mask.

Abstract: A plastic composite includes a face sheet layer consisting of poly(methyl methacrylate) (PMMA) or acrylic styrene acrylonitrile (ASA); a long fiber injection (LFI) layer disposed on a lower surface of the face sheet layer and consisting of polyurethane foam including reinforcing fiber; and a rib pattern layer formed on a lower surface of the LFI layer and comprising a plurality of ribs.

Abstract: A method for manufacturing a semiconductor device, the method including forming a stack on a wafer, wherein the stack includes a plurality of layers of the stack, forming a photoresist pattern on the stack, determining whether a material of at least one layer among the plurality of layers of the stack has changed and whether at least one process among a plurality of processes for forming the plurality of layers of the stack has changed, changing a first wavelength for overlay measurement upon determination that the material of the at least one layer or the at least one process has changed, and measuring an overlay using the changed first wavelength for overlay measurement.

Abstract: A memory device is provided. The memory device comprises an internal clock generator configured to receive an external clock signal from a host and generate an internal clock signal in accordance with a chip enable signal, an internal enable signal generator configured to operate based on the internal clock signal and receive an external enable signal from the host and generate an internal enable signal, and a monitoring signal generator configured to output a monitoring signal that is generated based on at least one of the internal clock signal or the internal enable signal to the host.

Abstract: A method for inspecting a critical dimension may include providing a substrate, applying a photoresist on the substrate, variably irradiating a dose of light onto the photoresist, performing a photo process to develop the photoresist to form a photoresist pattern, performing an etching process using the photoresist pattern as an etching mask to form a plurality of patterns, measuring a width of each of the plurality of patterns and a spacing between adjacent ones of the plurality of patterns, and identifying a cause of a defect in the photo process based on the measured width and the measured spacing.

Abstract: A plastic composite comprises a face sheet layer, a reinforcement layer formed on an upper surface of the face sheet layer and including a first glass fiber and a polyurethane foam, and a LFI layer formed on an upper surface of the reinforcement layer and including a second glass fiber and a polyurethane foam.

Abstract: An image processing system, including an input interface configured to receive a first direction image corresponding to a view of a semiconductor device in a first direction, and a second direction image corresponding to a view of the semiconductor device in a second direction which intersects the first direction at a first height at which the first direction image is generated; a processor configured to perform an edge detection operation for detecting an edge based on the first direction image, and to perform an image binarization operation on the first direction image; and a learning device configured to compare a first line width obtained based on the image binarization operation, and a second line width obtained based on the second direction image through machine learning, and to learn a condition of the image binarization operation which maximizes a correlation between the first line width and the second line width.

Abstract: A semiconductor device manufacturing system includes a photolithography apparatus that performs exposure. On a semiconductor substrate including a chip area and a scribe lane area. An etching apparatus etches the exposed semiconductor substrate. An observing apparatus images the etched semiconductor substrate. A controller controls the photolithography apparatus and the etching apparatus. The controller generates a first mask pattern and provides the first mask pattern to the photolithography apparatus. The photolithography apparatus performs exposure on the semiconductor substrate using the first mask pattern. The etching apparatus performs etching on the exposed semiconductor substrate to provide an etched semiconductor substrate. The observing apparatus generates a first semiconductor substrate image by imaging the etched semiconductor substrate corresponding to the scribe lane area.

Abstract: A memory device is provided. The memory device comprises an internal clock generator configured to receive an external clock signal from a host and generate an internal clock signal in accordance with a chip enable signal, an internal enable signal generator configured to operate based on the internal clock signal and receive an external enable signal from the host and generate an internal enable signal, and a monitoring signal generator configured to output a monitoring signal that is generated based on at least one of the internal clock signal or the internal enable signal to the host.

Abstract: A semiconductor device includes a substrate including a first cell region, a second cell region adjacent to the first cell region in a first direction, and a comparison region adjacent the first and second cell regions in a second direction, a bit line in a first metal level on the substrate and extending in the first direction, and a first ground rail in a second metal level different from the first metal level. The first ground rail comprises a first sub-ground rail extending in the second direction on the first cell region, a second sub-ground rail extending in the second direction on the second cell region, a third sub-ground rail connecting the first sub-ground rail to the second sub-ground rail on the first and second cell regions, and a fourth sub-ground rail that branches off from the third sub-ground rail and extends in the second direction.

Abstract: A method of manufacturing a semiconductor device includes forming a mold layer on a semiconductor wafer having a plurality of integrated circuit die at least partially defined therein. An etch stopper film is selectively formed on a second portion of the mold layer extending adjacent a periphery of the semiconductor wafer, but not on a first portion of the mold layer extending opposite at least one of the plurality of integrated circuit die. A preliminary pattern layer is formed on the etch stopper film and on the first portion of the mold layer. A plurality of patterns are formed in the preliminary pattern layer by selectively exposing the preliminary pattern layer to extreme ultraviolet light (EUV). Then, hole patterns are selectively formed in the first portion of the mold layer, using the exposed preliminary pattern layer and the etch stopper film as an etching mask.

Abstract: A semiconductor device manufacturing system includes a photolithography apparatus that performs exposure. On a semiconductor substrate including a chip area and a scribe lane area. An etching apparatus etches the exposed semiconductor substrate. An observing apparatus images the etched semiconductor substrate. A controller controls the photolithography apparatus and the etching apparatus. The controller generates a first mask pattern and provides the first mask pattern to the photolithography apparatus. The photolithography apparatus performs exposure on the semiconductor substrate using the first mask pattern. The etching apparatus performs etching on the exposed semiconductor substrate to provide an etched semiconductor substrate. The observing apparatus generates a first semiconductor substrate image by imaging the etched semiconductor substrate corresponding to the scribe lane area.