Patents by Inventor Wook-Seong Lee

Wook-Seong Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10908019
    Abstract: Present invention provides a spectrometer including a first unit spectral filter configured to absorb or reflect light in a part of a wavelength band of a light spectrum of an incident target, a second unit spectral filter configured to absorb or reflect light in a wavelength band different from the part of the wavelength band, a first light detector configured to detect a first light spectrum passing through the first unit spectral filter, a second light detector configured to detect a second light spectrum passing through the second unit spectral filter, and a processing unit configured to perform a function of restoring a light spectrum of the target incident from spectra of light detected from the first light detector and the second light detector.
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: February 2, 2021
    Assignee: Samsung Electrionics Co., Ltd.
    Inventors: Kyeong Seok Lee, Won Mok Kim, Gyu Weon Hwang, In Ho Kim, Wook Seong Lee, Doo Seok Jeong
  • Patent number: 10697073
    Abstract: A method for manufacturing an electrode for hydrogen production using a tungsten carbide nanoflake may include: forming a tungsten carbide nanoflake on a nanocrystalline diamond film by means of a chemical vapor deposition process in which hydrogen plasma is applied; and increasing activity of the tungsten carbide nanoflake to a hydrogen evolution reaction by removing an oxide layer or a graphene layer from a surface of the tungsten carbide nanoflake. Since an oxide layer and/or a graphene layer of a surface of tungsten carbide is removed by means of cyclic cleaning after tungsten carbide is formed, hydrogen evolution reaction (HER) activity of the tungsten carbide may be increased, thereby enhancing utilization as a catalyst electrode.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: June 30, 2020
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Wook Seong Lee, Young-Jin Ko, Young Joon Baik, Jong-Keuk Park, Kyeong Seok Lee, Inho Kim, Doo Seok Jeong
  • Patent number: 10476082
    Abstract: The present invention relates to a surface coated positive electrode active material, a preparation method thereof, and a lithium secondary battery including the same. More specifically, it relates to a positive electrode active material of which surface is coated with a nanofilm including polyimide (PI) and carbon black, a preparation method thereof, and a lithium secondary battery including the same. The positive electrode active material of which surface is coated with the nanofilm according to the present invention is capable of preventing direct contact of the positive electrode active material with an electrolyte thereby suppressing a side reaction between the positive electrode active material and the electrolyte, and as a result, a lifespan property of a lithium secondary battery using a positive electrode including the same may be significantly improved, and particularly, a lifespan property and conductivity are capable of being enhanced under a high temperature and high voltage condition.
    Type: Grant
    Filed: August 26, 2015
    Date of Patent: November 12, 2019
    Assignees: LG Chem, Ltd., UNIST (Ulsan National Institute of Science and Technology)
    Inventors: Wook Jang, Sang Young Lee, Seung Beom Cho, Jun Seong Ahn, Jang Hoon Park, Ju Myung Kim
  • Publication number: 20190025120
    Abstract: Present invention provides a spectrometer including a first unit spectral filter configured to absorb or reflect light in a part of a wavelength band of a light spectrum of an incident target, a second unit spectral filter configured to absorb or reflect light in a wavelength band different from the part of the wavelength band, a first light detector configured to detect a first light spectrum passing through the first unit spectral filter, a second light detector configured to detect a second light spectrum passing through the second unit spectral filter, and a processing unit configured to perform a function of restoring a light spectrum of the target incident from spectra of light detected from the first light detector and the second light detector.
    Type: Application
    Filed: July 31, 2017
    Publication date: January 24, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kyeong Seok LEE, Won Mok KIM, Gyu Weon HWANG, In Ho KIM, Wook Seong LEE, Doo Seok JEONG
  • Publication number: 20190018188
    Abstract: Provided is an optical filter including a cladding layer, a plurality of metal patterns configured to form a periodic lattice structure on the cladding layer; and an optical waveguide layer on the plurality of metal patterns. Light travels from the optical waveguide layer to the cladding layer. Provided is an optical device using the optical filter.
    Type: Application
    Filed: July 31, 2017
    Publication date: January 17, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kyeong Seok LEE, Gyu Weon HWANG, In Ho KIM, Won Mok KIM, Wook Seong LEE, Doo Seok JEONG
  • Publication number: 20190016091
    Abstract: Provided is an optical filter including first and second reflection layers separated from each other, a dielectric region interposed between the first and second reflection layers and in which two materials of which refractive indexes are different are alternately disposed, and a buffer layer disposed between the dielectric region and at least one of the first and second reflection layers, wherein there are at least two filter regions in which relative volume ratios of the two materials alternately disposed are different.
    Type: Application
    Filed: July 31, 2017
    Publication date: January 17, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kyeong Seok LEE, Gyu Weon HWANG, Won Mok KIM, In Ho KIM, Wook Seong LEE, Doo Seok JEONG
  • Publication number: 20180038003
    Abstract: A method for manufacturing an electrode for hydrogen production using a tungsten carbide nanoflake may include: forming a tungsten carbide nanoflake on a nanocrystalline diamond film by means of a chemical vapor deposition process in which hydrogen plasma is applied; and increasing activity of the tungsten carbide nanoflake to a hydrogen evolution reaction by removing an oxide layer or a graphene layer from a surface of the tungsten carbide nanoflake. Since an oxide layer and/or a graphene layer of a surface of tungsten carbide is removed by means of cyclic cleaning after tungsten carbide is formed, hydrogen evolution reaction (HER) activity of the tungsten carbide may be increased, thereby enhancing utilization as a catalyst electrode.
    Type: Application
    Filed: May 30, 2017
    Publication date: February 8, 2018
    Inventors: Wook Seong LEE, Young-Jin KO, Young Joon BAIK, Jong-Keuk PARK, Kyeong Seok LEE, Inho KIM, Doo Seok JEONG
  • Patent number: 9840417
    Abstract: Disclosed is AA? graphite with a new stacking feature of graphene, and a fabrication method thereof. Graphene is stacked in the sequence of AA? where alternate graphene layers exhibiting the AA? stacking are translated by a half hexagon (1.23 ?). AA? graphite has an interplanar spacing of about 3.44 ? larger than that of the conventional AB stacked graphite (3.35 ?) that has been known as the only crystal of pure graphite. This may allow the AA? stacked graphite to have unique physical and chemical characteristics.
    Type: Grant
    Filed: November 4, 2015
    Date of Patent: December 12, 2017
    Assignee: Korea Institute of Science and Technology
    Inventors: Jae-Kap Lee, So-Hyung Lee, Jae-Pyoung Ahn, Seung-cheol Lee, Wook-Seong Lee
  • Patent number: 9726788
    Abstract: A method for fabricating a nanoantenna array may include forming a resist layer on a substrate, forming a focusing layer having a dielectric microstructure array on the resist layer, diffusing light one-dimensionally in a specific direction by using a linear diffuser, forming an anisotropic pattern on the resist layer by illuminating the light diffused by the linear diffuser on the focusing layer and the resist layer, depositing a material suitable for a plasmonic resonance onto the substrate and the resist layer on which the pattern is formed, and forming a nanoantenna array on the substrate by removing the resist layer and the material deposited on the resist layer. A light diffusing angle by the linear diffuser and a size of the dielectric microstructure are determined based on an aspect ratio of the pattern to be formed.
    Type: Grant
    Filed: April 15, 2014
    Date of Patent: August 8, 2017
    Assignee: Korea Institute of Science and Technology
    Inventors: Kyeong Seok Lee, Won Mok Kim, Taek Sung Lee, Wook Seong Lee, Doo Seok Jeong, Inho Kim
  • Patent number: 9482798
    Abstract: A plasmonic nano-color coating layer includes a composite layer including a plurality of metal particle layers and a plurality of matrix layers and having a periodic multilayer structure in which the metal particle layers and the matrix layers are alternately arranged, a dielectric buffer layer located below the composite layer, and a mirror layer located below the dielectric buffer layer, wherein the color of the plasmonic nano-color coating layer is determined based on a nominal thickness of the metal particle layer and a separation between the metal particle layers.
    Type: Grant
    Filed: March 19, 2014
    Date of Patent: November 1, 2016
    Assignee: Korea Institute of Science and Technology
    Inventors: Kyeong Seok Lee, Won Mok Kim, Taek Sung Lee, Wook Seong Lee, Doo Seok Jeong, Inho Kim
  • Publication number: 20160221156
    Abstract: A superhard boron carbide thin film with superior high temperature oxidation resistance has a structure in which a boron carbide layer and a silicon carbide layer are repeatedly stacked in an alternating manner. Accordingly, the high temperature oxidation resistance of the boron carbide thin film is enhanced, allowing the application as coating materials for wear resistant tools such as cutting tools.
    Type: Application
    Filed: December 16, 2015
    Publication date: August 4, 2016
    Applicant: Korea Institute of Science and Technology
    Inventors: Young Joon BAIK, Jong-Keuk PARK, Wook Seong LEE
  • Publication number: 20160122188
    Abstract: Disclosed is AA? graphite with a new stacking feature of graphene, and a fabrication method thereof. Graphene is stacked in the sequence of AA? where alternate graphene layers exhibiting the AA? stacking are translated by a half hexagon (1.23 ?). AA? graphite has an interplanar spacing of about 3.44 ? larger than that of the conventional AB stacked graphite (3.35 ?) that has been known as the only crystal of pure graphite. This may allow the AA? stacked graphite to have unique physical and chemical characteristics.
    Type: Application
    Filed: November 4, 2015
    Publication date: May 5, 2016
    Applicant: Korea Institute of Science and Technology
    Inventors: Jae-Kap LEE, So-Hyung LEE, Jae-Pyoung AHN, Seung-cheol LEE, Wook-Seong LEE
  • Patent number: 9200363
    Abstract: Disclosed is AA? graphite with a new stacking feature of graphene, and a fabrication method thereof. Graphene is stacked in the sequence of AA? where alternate graphene layers exhibiting the AA? stacking are translated by a half hexagon (1.23 ?). AA? graphite has an interplanar spacing of about 3.44 ? larger than that of the conventional AB stacked graphite (3.35 ?) that has been known as the only crystal of pure graphite. This may allow the AA? stacked graphite to have unique physical and chemical characteristics.
    Type: Grant
    Filed: July 30, 2009
    Date of Patent: December 1, 2015
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Jae-Kap Lee, So-Hyung Lee, Jae-Pyoung Ahn, Seung-Cheol Lee, Wook-Seong Lee
  • Patent number: 9175387
    Abstract: 2-dimensional nanostructured tungsten carbide which is obtained by control of the alignment of nanostructure during growth of tungsten carbide through control of the degree of supersaturation and a method for fabricating same are disclosed. The method for fabricating 2-dimensional nanostructured tungsten carbide employs a chemical vapor deposition process wherein a hydrogen plasma is applied to prepare 2-dimensional nanostructured tungsten carbide vertically aligned on a nanocrystalline diamond film. The chemical vapor deposition process wherein the hydrogen plasma is applied includes: disposing a substrate with the nanocrystalline diamond film formed thereon on an anode in a chamber, disposing a surface-carburized tungsten cathode above and at a distance from the substrate, and applying the hydrogen plasma into the chamber.
    Type: Grant
    Filed: January 21, 2013
    Date of Patent: November 3, 2015
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Wook Seong Lee, Hak Joo Lee, Young Joon Baik, Jong Keuk Park
  • Patent number: 9074281
    Abstract: Methods for fabricating uniform nanocrystalline diamond thin films with minimized voids are presented. These uniform nanocrystalline diamond thin films can be formed on any number of treated silicon oxide surfaces such as on hydrogen plasma treated surfaces of silicon oxide-coated substrates or on hydrocarbon plasma pre-treated surfaces of silicon oxide-coated substrates. It is believed that treating these surfaces results in maximizing electrostatic attraction between these treated surfaces with nanodiamond particles during a subsequent ultrasonic seeding of the nanodiamond particles onto these threated surfaces. This can result in the nanodiamond particles being substantially uniformly distributed and bound on the treated silicon oxide surface.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: July 7, 2015
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Wook Seong Lee, Hak Joo Lee, Young Joon Baik, Jong Keuk Park
  • Publication number: 20150146180
    Abstract: A method for fabricating a nanoantenna array may include forming a resist layer on a substrate, forming a focusing layer having a dielectric microstructure array on the resist layer, diffusing light one-dimensionally in a specific direction by using a linear diffuser, forming an anisotropic pattern on the resist layer by illuminating the light diffused by the linear diffuser on the focusing layer and the resist layer, depositing a material suitable for a plasmonic resonance onto the substrate and the resist layer on which the pattern is formed, and forming a nanoantenna array on the substrate by removing the resist layer and the material deposited on the resist layer. A light diffusing angle by the linear diffuser and a size of the dielectric microstructure are determined based on an aspect ratio of the pattern to be formed.
    Type: Application
    Filed: April 15, 2014
    Publication date: May 28, 2015
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Kyeong Seok LEE, Won Mok KIM, Taek Sung LEE, Wook Seong LEE, Doo Seok JEONG, Inho KIM
  • Publication number: 20150116856
    Abstract: A plasmonic nano-color coating layer includes a composite layer including a plurality of metal particle layers and a plurality of matrix layers and having a periodic multilayer structure in which the metal particle layers and the matrix layers are alternately arranged, a dielectric buffer layer located below the composite layer, and a mirror layer located below the dielectric buffer layer, wherein the color of the plasmonic nano-color coating layer is determined based on a nominal thickness of the metal particle layer and a separation between the metal particle layers.
    Type: Application
    Filed: March 19, 2014
    Publication date: April 30, 2015
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Kyeong Seok LEE, Won Mok KIM, Taek Sung LEE, Wook Seong LEE, Doo Seok JEONG, Inho KIM
  • Patent number: 8973526
    Abstract: A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk.
    Type: Grant
    Filed: December 10, 2007
    Date of Patent: March 10, 2015
    Assignee: Korea Institute of Science and Technology
    Inventors: Wook Seong Lee, Young Joon BaiK, Jong-Keuk Park, Gyu Weon Hwang, Jeung-hyun Jeong
  • Patent number: 8852406
    Abstract: A method for producing a cubic boron nitride (cBN) thin film includes depositing cBN onto nanocrystalline diamond having controlled surface irregularity characteristics to improve the adhesion at the interface of cBN/nanocrystalline diamond, while incorporating hydrogen to a reaction gas upon the synthesis of cBN and controlling the feed time of hydrogen, so that harmful reactions occurring on a surface of nanocrystalline diamond and residual stress applied to cBN may be inhibited. Also, a cBN thin film structure is obtained by the method. The cBN thin film is formed on the nanocrystalline diamond thin film by using a physical vapor deposition process, wherein a reaction gas supplied when the deposition of a thin film occurs is a mixed gas of argon (Ar) with nitrogen (N2), and hydrogen (H2) is added to the reaction gas at a time after the deposition of a thin film occurs.
    Type: Grant
    Filed: January 18, 2013
    Date of Patent: October 7, 2014
    Assignee: Korea Institute of Science and Technology
    Inventors: Young Joon Baik, Jong Keuk Park, Wook Seong Lee
  • Publication number: 20140255286
    Abstract: A method for manufacturing a cubic boron nitride (c-BN) thin film includes: applying a pulse-type bias voltage to a substrate; and forming the cubic boron nitride thin film by bombarding the substrate with ions using the pulse-type bias voltage. To control the compressive residual stress of the cubic boron nitride thin film, ON/OFF time ratio of the pulse-type bias voltage may be controlled. The compressive residual stress that is applied to the thin film can be minimized by using the pulse-type voltage as a negative bias voltage applied to the substrate. In addition, the deposition of the c-BN thin film can be performed in a low ion energy region by increasing the ion/neutral particle flux ratio through the control of the ON/OFF time ratio of the pulse-type voltage.
    Type: Application
    Filed: May 28, 2013
    Publication date: September 11, 2014
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Young Joon BAIK, Jong-Keuk PARK, Wook Seong LEE