Abstract: A localized surface plasmon resonance sensor may include a localized surface plasmon excitation layer including a chalcogenide material. The chalcogenide material may include: a first material including at least one of selenium (Se) and tellurium (Te); and a second material including at least one of germanium (Ge) and antimony (Sb). The localized surface plasmon excitation layer may be prepared by forming a thin film including the chalcogenide material and crystallizing the thin film to have a predetermined pattern by irradiating laser on the thin film.

Abstract: Provided are a method and an apparatus for rapid growth of a diamond capable of synthesizing a diamond having a large area and increasing a rate of synthesis of the diamond. The method for rapid growth of a diamond according to the present disclosure using a hot filament chemical vapor deposition (HFCVD) method includes: controlling a concentration of atomic hydrogen by controlling a flow rate of a precursor gas including hydrogen and hydrocarbon; and providing a solid phase carbon source which is etched by atomic hydrogen to increase a degree of supersaturation of a carbon source in a chamber of an HFCVD apparatus.

Abstract: Disclosed is a method for fabricating graphene ribbons, comprising: preparing a graphitic material comprising stacked graphene helices; and cutting the graphitic material in a short form by applying energy to the graphitic material; and simultaneously or afterward, decomposing the graphitic material into short graphene ribbons. This method provides a mass production route to graphene ribbons.

Abstract: A method for growing carbon nanoflakes includes inducing partial etching of graphene layers of carbon nanotubes through an adequate composition of precursor gases, CH4, H2 and Ar, while allowing carbon nanoflakes to grow at the etched site in a plane-like shape. A carbon nanoflake structure is formed by the same method. The method for growing carbon nanoflakes includes: providing a silicon substrate having carbon nanotubes; and growing carbon nanoflakes on the carbon nanotubes through a chemical vapor deposition process using a mixed gas of CH4, H2 and Ar as a precursor. During the chemical vapor deposition process, the mixed gas of CH4, H2 and Ar is in an atmosphere with excess Ar, graphene layers forming the carbon nanotubes are etched partially under the atmosphere with excess Ar, and graphene layers of carbon nanoflakes are grown at the etched site.

Abstract: A method for producing a cubic boron nitride (cBN) thin film includes depositing cBN onto nanocrystalline diamond having controlled surface irregularity characteristics to improve the adhesion at the interface of cBN/nanocrystalline diamond, while incorporating hydrogen to a reaction gas upon the synthesis of cBN and controlling the feed time of hydrogen, so that harmful reactions occurring on a surface of nanocrystalline diamond and residual stress applied to cBN may be inhibited. Also, a cBN thin film structure is obtained by the method. The cBN thin film is formed on the nanocrystalline diamond thin film by using a physical vapor deposition process, wherein a reaction gas supplied when the deposition of a thin film occurs is a mixed gas of argon (Ar) with nitrogen (N2), and hydrogen (H2) is added to the reaction gas at a time after the deposition of a thin film occurs.

Abstract: A uniform nanocrystalline diamond thin film with minimized voids is formed on a silicon oxide-coated substrate and a method for fabricating same are disclosed. The nanocrystalline diamond thin film is formed by performing hydrogen plasma treatment, hydrocarbon plasma treatment or hydrocarbon thermal treatment on the substrate surface to maximize electrostatic attraction between the substrate surface and nanodiamond particles during the following ultrasonic seeding such that the nanodiamond particles are uniformly distributed and bound on the silicon oxide on the substrate.

Abstract: In the method for depositing a material in the absence of a positive column, a discharge is generated between a cathode and an anode disposed to face each other in a reaction chamber by applying a DC voltage therebetween, and introducing reaction gas into the reaction chamber, thereby depositing a material on a substrate mounted on the anode and serving as a part of the anode, wherein the deposition of the material on the substrate is performed under a state that a cathode glow and an anode glow exist in a form of thin layers coating respectively the surfaces of the cathode and the substrate, while a positive column does not exist or is so small as to be negligible.

Abstract: There is provided a fabrication method for an AA stacked graphene-diamond hybrid material by converting, through a high temperature treatment on diamond, a diamond surface into graphene. According to the present invention, if various types of diamond are maintained at a certain temperature having a stable graphene phase (approximately greater than 1200° C.) in a hydrogen gas atmosphere, two diamond {111} lattice planes are converted into one graphene plate (2:1 conversion), whereby the diamond surface is converted into graphene in a certain thickness, thus to fabricate the AA stacked graphene-diamond hybrid material.

Abstract: A bio-sensor includes a gate dielectric formed on a silicon semiconductor substrate, a gate electrode of a conductive diamond film formed on the gate dielectric, probe molecules bonded on the gate electrode for detecting biomolecules, and source/drain regions formed on the semiconductor substrate at the sides of the gate electrode. The gate electrode is a comb shape or a lattice shape.

Abstract: There is provided a fabrication method for an AA stacked graphene-diamond hybrid material by converting, through a high temperature treatment on diamond, a diamond surface into graphene. According to the present invention, if various types of diamond are maintained at a certain temperature having a stable graphene phase (approximately greater than 1200° C.) in a hydrogen gas atmosphere, two diamond {111} lattice planes are converted into one graphene plate (2:1 conversion), whereby the diamond surface is converted into graphene in a certain thickness, thus to fabricate the AA stacked graphene-diamond hybrid material.

Abstract: The present invention relates to a method of preventing abnormal large grains from being included in a NCD thin film during a hot filament CVD process by appropriately controlling the deposition condition regarding a temperature-measuring means, a deposition pressure, an electrical potential and/or the composition of a raw material gas flow.

Abstract: The present invention relates to a method for depositing a cBN thin film on a substrate to obtain an abrasive material by physical vapor deposition carried out under an atmosphere composed of an inert gas and hydrogen. The abrasive produced by the inventive method comprises the cBN thin film attached firmly to the substrate, which has excellent hardness and durability.

Abstract: Disclosed herein are a graphene hybrid material and a method for preparing the graphene hybrid material, the graphene hybrid material comprising: a matrix having lattice planes disconnected on a surface thereof; and layers of graphene which are epitaxially grown along the lattice planes disconnected on the surface of the matrix such that the layers of graphene are oriented perpendicularly to the matrix, and which are spaced apart from each other and layered on the matrix in the same shape. The graphene hybrid material can be usefully used in the fields of next-generation semiconductor devices, biosensors, electrochemical electrodes and the like.

Abstract: A bio-sensor includes a gate dielectric formed on a silicon semiconductor substrate, a gate electrode of a conductive diamond film formed on the gate dielectric, probe molecules bonded on the gate electrode for detecting biomolecules, and source/drain regions formed on the semiconductor substrate at the sides of the gate electrode. The gate electrode is a comb shape or a lattice shape.

Abstract: Disclosed is a method for fabricating graphene ribbons, comprising: preparing a graphitic material comprising stacked graphene helices; and cutting the graphitic material in a short form by applying energy to the graphitic material; and simultaneously or afterward, decomposing the graphitic material into short graphene ribbons. This method provides a mass production route to graphene ribbons.

Abstract: Disclosed is AA? graphite with a new stacking feature of graphene, and a fabrication method thereof. Graphene is stacked in the sequence of AA? where alternate graphene layers exhibiting the AA? stacking are translated by a half hexagon (1.23 ?). AA? graphite has an interplanar spacing of about 3.44 ? larger than that of the conventional AB stacked graphite (3.35 ?) that has been known as the only crystal of pure graphite. This may allow the AA? stacked graphite to have unique physical and chemical characteristics.

Abstract: There is provided a fabrication method for an AA stacked graphene-diamond hybrid material by converting, through a high temperature treatment on diamond, a diamond surface into graphene. According to the present invention, if various types of diamond are maintained at a certain temperature having a stable graphene phase (approximately greater than 1200° C.) in a hydrogen gas atmosphere, two diamond {111} lattice planes are converted into one graphene plate (2:1 conversion), whereby the diamond surface is converted into graphene in a certain thickness, thus to fabricate the AA stacked graphene-diamond hybrid material.

Abstract: A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk.

Abstract: The present invention relates to a method of preventing abnormal large grains from being included in a NCD thin film during a hot filament CVD process by appropriately controlling the deposition condition regarding a temperature-measuring means, a deposition pressure, an electrical potential and/or the composition of a raw material gas flow.

Abstract: Disclosed herein are a graphene hybrid material and a method for preparing the graphene hybrid material, the graphene hybrid material comprising: a matrix having lattice planes disconnected on a surface thereof; and layers of graphene which are epitaxially grown along the lattice planes disconnected on the surface of the matrix such that the layers of graphene are oriented perpendicularly to the matrix, and which are spaced apart from each other and layered on the matrix in the same shape. The graphene hybrid material can be usefully used in the fields of next-generation semiconductor devices, biosensors, electrochemical electrodes and the like.