Abstract: The present invention relates to a novel bipyridinyl derivative having a structure of formula (1) and its pharmaceutically acceptable salts, optical isomer and method for preparing it as a highly selective cyclooxygenase-2 inhibitor, wherein R is defined in this specification.

Abstract: The present invention discloses a non-volatile semiconductor memory device and a method of operating the same. More specifically, the present invention includes a semiconductor substrate having active and field regions, at least two non-volatile storage transistors each of which having a storage on the active region and a control gate at the storage, wherein at least two control gates are incorporated into a single control plate, and at least two selection transistors each of which corresponds to the non-volatile storage transistor, wherein each of the selection transistors connected to the corresponding non-volatile storage transistors for selecting the corresponding non-volatile storage transistors.

Abstract: A thiazolidine-4-one derivative of formula 1 or a non-toxic salt thereof, a preparation method thereof, and a pharmaceutical composition containing the derivative or the salt as an active ingredient are provided: wherein: R1 and R2 each independently represent hydrogen, C1-C3 alkyl, halogen, methyl substituted with halogen, C1-C3 alkoxy substituted with halogen, cyano, or nitro.

Abstract: The present invention relates to a novel 3,4-dihydro-1H-naphthalene derivative having a structure of formula 1 or formula 2, its pharmaceutically acceptable salts and their geometric isomers as a highly selective cyclooxygenase-2 inhibitor. Wherein R1, R2, X, A and Q are defined in this specification respectively.

Abstract: A 2-thioxothiazole derivative of formula 1 or a non-toxic salt thereof, a preparation method thereof, and a pharmaceutical composition containing the derivative or the salt as an active ingredient are provided: wherein: R represents hydrogen or methyl; X represents hydrogen, methyl, halogen, nitro, or methanesulfonyl.

Abstract: A pyrazole-3-one derivative of formula 1 or a non-toxic salt thereof, a preparation method thereof, and a pharmaceutical composition containing the derivative or the salt as an active ingredient are provided: wherein: R1 and R2 each independently represent C1-C3 alkyl, aryl, or substituted aryl; R3 represents amino or methyl; R4 and R5 each independently represent hydrogen, C1-C3 alkyl, halogen, methyl substituted with halogen, C1-C3 alkoxy, cyano, or nitro; or a non-toxic salt thereof.

Abstract: The present invention relates to a novel 3,4-dihydro-1H-naphthalene derivative having a structure of formula 1 or formula 2, its pharmaceutically acceptable salts and their geometric isomers as a highly selective cyclooxygenase-2 inhibitor. Wherein, R1, R2, X, A and Q are defined in this specification respectively.

Abstract: A pyrazole-3-one derivative of formula 1 or a non-toxic salt thereof, a preparation method thereof, and a.

Abstract: A 2-thioxothiazole derivative of formula 1 or a non-toxic salt thereof, a preparation method thereof, and a pharmaceutical composition containing the derivative or the salt as an active ingredient are provided: 1

Abstract: A thiazolidine-4-one derivative of formula 1 or a non-toxic salt thereof, a preparation method thereof, and a pharmaceutical composition containing the derivative or the salt as an active ingredient are provided: 1

Abstract: The present invention relates to a novel 3,4-dihydro-1H-naphthalene derivative having a structure of formula 1 or formula 2, its pharmaceutically acceptable salts and their geometric isomers as a highly selective cyclooxygenase-2 inhibitor.

Abstract: The present invention relates to a novel 1H-indole derivative having a structure of formula 1 and its pharmaceutically acceptable salts as a highly selective cyclooxygenase-2 inhibitor. Wherein, X, Y, and Q are defined in this specification respectively.

Abstract: The present invention relates to a novel 4′-methanesulfonyl-biphenyl derivative having a structure of formula 1 and its pharmaceutically acceptable salts as a highly selective cyclooxygenase-2 inhibitor. <Formula 1> Wherein, R1 and R2 are defined in this specification respectively.

Abstract: The present invention relates to a novel 3,4-dihydro-1H-naphthalene derivative having a structure of formula 1 or formula 2, its pharmaceutically acceptable salts and their geometric isomers as a highly selective cyclooxygenase-2 inhibitor.

Abstract: The present invention relates to a novel 1H-indole derivative having a structure of formula 1 and its pharmaceutically acceptable salts as a highly selective cyclooxygenase-2 inhibitor.

Abstract: The present invention relates to a novel 4′-methanesulfonyl-biphenyl derivative having a structure of formula 1 and its pharmaceutically acceptable salts as a highly selective cyclooxygenase-2 inhibitor.

Abstract: In a flash memory device, electrical connections between segment transistors and memory cells are accurately achieved by forming the segment transistors before forming the memory cells. When forming the segment transistors, a first impurity is implanted into a substrate to form a first source and a first drain. A second impurity is then implanted into the substrate to form a conductive line to be used as a common bit line for the memory cells, and simultaneously form a second source below the first source and a second drain below the first drain of the segment transistor. As such, the common bit lines of the memory cells and the second sources of the segment transistors are formed to be electrically connected together with more reliability.

Abstract: The present invention discloses a non-volatile semiconductor memory device and a method of operating the same. More specifically, the present invention includes a semiconductor substrate having active and field regions, at least two non-volatile storage transistors each of which having a storage on the active region and a control gate at the storage, wherein at least two control gates are incorporated into a single control plate, and at least two selection transistors each of which corresponds to the non-volatile storage transistor, wherein each of the selection transistors connected to the corresponding non-volatile storage transistors for selecting the corresponding non-volatile storage transistors.

Abstract: Nonvolatile memory device and a method of programming the same, is disclosed, wherein, for single level or multi-level programming of a cell, predetermined voltages are applied to a control gate, source and drain respectively for varying a charge amount in the floating gate. A channel in a transistor is turned off at an initial stage and then turned on thereafter, and at least one of the voltages applied to the control gate and the program/select gate is halted to stop the programming when a conductivity of the channel region reaches a reference value.

Abstract: In a flash memory device, electrical connections between segment transistors and memory cells are accurately achieved by forming the segment transistors before forming the memory cells. When forming the segment transistors, a first impurity is implanted into a substrate to form a first source and a first drain. A second impurity is then implanted into the substrate to form a conductive line to be used as a common bit line for the memory cells, and simultaneously form a second source below the first source and a second drain below the first drain of the segment transistor. As such, the common bit lines of the memory cells and the second sources of the segment transistors are formed to be electrically connected together with more reliability.