Abstract: Provided are an electronic device mounted on a vehicle and an operating method of the electronic device. An electronic device, according to an embodiment of the disclosure, obtains a surrounding environment image by using a camera, detects at least one object from the surrounding environment image by using an artificial intelligence (AI) model, receives a vehicle to everything (V2X) data set including information about the at least one object, selects a first object in the detected at least one object by a user input, obtains information about a type of the first object by using a detection result determined based on the surrounding environment image and the received V2X data set, and displays a user interface (UI) for wireless communication connection with the first object, based on the information about the type of the first object.

Abstract: An image sensor device includes a digital pixel that includes a photo detector, a comparator, and a memory circuit, a pixel driver that controls the digital pixel, and a digital logic circuit that performs a digital signal processing operation on a digital signal output from the digital pixel. The photo detector and a first portion of the comparator are formed in a first semiconductor die, a second portion of the comparator, the memory circuit, and the pixel driver are formed in a second semiconductor die under the first semiconductor die, and the digital logic circuit is formed in a third semiconductor die under the second semiconductor die.

Abstract: A unit pixel includes first and second photoelectric conversion units, a first transfer transistor disposed between the first photoelectric conversion unit and a first node, a first capacitor connected to the first node through a first switch transistor, and a second transfer transistor disposed between the second photoelectric conversion unit and the first node. A signal including a first voltage level is applied to the first transfer transistor and the second transfer transistor during a first time interval, a signal including a second voltage level is applied to the first transfer transistor, the second transfer transistor, and the first switch transistor during a second time interval, a signal including a third voltage level is applied to the first transfer transistor during a third time interval, and the signal including the first voltage level is applied to the second transfer transistor and the first switch transistor during a fourth time interval.

Abstract: A unit pixel includes first and second photoelectric conversion units, a first transfer transistor disposed between the first photoelectric conversion unit and a first node, a first capacitor connected to the first node through a first switch transistor, and a second transfer transistor disposed between the second photoelectric conversion unit and the first node. A signal including a first voltage level is applied to the first transfer transistor and the second transfer transistor during a first time interval, a signal including a second voltage level is applied to the first transfer transistor, the second transfer transistor, and the first switch transistor during a second time interval, a signal including a third voltage level is applied to the first transfer transistor during a third time interval, and the signal including the first voltage level is applied to the second transfer transistor and the first switch transistor during a fourth time interval.

Abstract: A substrate treating apparatus includes a process module including a plurality of process units that perform a plurality of steps included in a substrate treating process and that perform the substrate treating process on substrates sequentially placed in the process units based on process recipes for the substrates, a scheduler that controls operations of the process module and the process units included in the process module, a storage that stores transfer paths information of the substrates, and a selection module that selects a process unit to proceed, by a result of feeding back the transfer paths information stored in the storage to the scheduler. The substrate treating apparatus may further include a measuring instrument that measures defect values of the transfer paths information along which the substrates are transferred. The storage may store the defect values measured by the measuring instrument according to the transfer paths information of the substrates.

Abstract: An image sensing device includes a pixel circuit, a readout circuit, and a row driver. The pixel circuit is configured to output a pixel signal in response to a selection signal. The readout circuit is configured to output a digital signal corresponding to the pixel signal, generate a gain control signal based on a first pixel signal received from the pixel circuit, provide the gain control signal to the pixel circuit, receive a second pixel signal output by the pixel circuit using the gain control signal, and output a digital signal corresponding to the second pixel signal. The row driver is configured to provide the selection signal to the pixel circuit while maintaining the selection signal at a first level while the readout circuit provides the gain control signal to the pixel circuit and the pixel circuit outputs the second pixel signal to the readout circuit.

Abstract: A unit pixel includes first and second photoelectric conversion units, a first transfer transistor disposed between the first photoelectric conversion unit and a first node, a first capacitor connected to the first node through a first switch transistor, and a second transfer transistor disposed between the second photoelectric conversion unit and the first node. A signal including a first voltage level is applied to the first transfer transistor and the second transfer transistor during a first time interval, a signal including a second voltage level is applied to the first transfer transistor, the second transfer transistor, and the first switch transistor during a second time interval, a signal including a third voltage level is applied to the first transfer transistor during a third time interval, and the signal including the first voltage level is applied to the second transfer transistor and the first switch transistor during a fourth time interval.

Abstract: A digital pixel sensor for correcting and reducing a mismatch between a pixel and an analog digital converter provided. The digital pixel sensor includes a pixel array including a plurality of pixels; and a bank disposed on the pixel array. The bank includes: a plurality of comparators disposed on the plurality of pixels and configured to compare each of a plurality of pixel signals output from the plurality of pixels with a reference signal to output a plurality of comparison result signals; and a counter connected to the plurality of comparators, and configured to receive the plurality of comparison result signals and latch count code based on the plurality of comparison result signals.

Abstract: An image sensor device includes a digital pixel that includes a photo detector, a comparator, and a memory circuit, a pixel driver that controls the digital pixel, and a digital logic circuit that performs a digital signal processing operation on a digital signal output from the digital pixel. The photo detector and a first portion of the comparator are formed in a first semiconductor die, a second portion of the comparator, the memory circuit, and the pixel driver are formed in a second semiconductor die under the first semiconductor die, and the digital logic circuit is formed in a third semiconductor die under the second semiconductor die.

Abstract: A digital pixel includes a photo diode connected to a first node and configured to generate an optical signal from an incident light, a storage diode configured to store the optical signal in a second node, a floating diffusion node configured to output a detection signal based on the optical signal, a first transmission transistor connected between the first and second nodes, and configured to transmit the optical signal from the first node to the second node, a second transmission transistor connected between the second node and the floating diffusion node, and configured to transmit the optical signal from the second node to the floating diffusion node, and a discharge transistor connected to the first node and configured to be turned on in a section in which the second transmission transistor is turned on to discharge a parasitic charge generated in the first node.

Abstract: An image sensor device includes a digital pixel that includes a photo detector, a comparator, and a memory circuit, a pixel driver that controls the digital pixel, and a digital logic circuit that performs a digital signal processing operation on a digital signal output from the digital pixel. The photo detector and a first portion of the comparator are formed in a first semiconductor die, a second portion of the comparator, the memory circuit, and the pixel driver are formed in a second semiconductor die under the first semiconductor die, and the digital logic circuit is formed in a third semiconductor die under the second semiconductor die.

Abstract: A digital pixel sensor for correcting and reducing a mismatch between a pixel and an analog digital converter provided. The digital pixel sensor includes a pixel array including a plurality of pixels; and a bank disposed on the pixel array. The bank includes: a plurality of comparators disposed on the plurality of pixels and configured to compare each of a plurality of pixel signals output from the plurality of pixels with a reference signal to output a plurality of comparison result signals; and a counter connected to the plurality of comparators, and configured to receive the plurality of comparison result signals and latch count code based on the plurality of comparison result signals.

Abstract: An image sensing device includes a pixel circuit, a readout circuit, and a row driver. The pixel circuit is configured to output a pixel signal in response to a selection signal. The readout circuit is configured to output a digital signal corresponding to the pixel signal, generate a gain control signal based on a first pixel signal received from the pixel circuit, provide the gain control signal to the pixel circuit, receive a second pixel signal output by the pixel circuit using the gain control signal, and output a digital signal corresponding to the second pixel signal. The row driver is configured to provide the selection signal to the pixel circuit while maintaining the selection signal at a first level while the readout circuit provides the gain control signal to the pixel circuit and the pixel circuit outputs the second pixel signal to the readout circuit.

Abstract: Disclosed is a substrate treating apparatus including a coating module, an exposure module, a plurality of developing modules, and a transfer unit that performs transfer of a substrate between the modules. The plurality of developing modules include a plurality of post-exposure bake units that perform a bake process on a substrate on which an exposure process is completely performed in the exposure module. The substrate treating apparatus further includes a controller that controls the transfer of the substrate by the transfer unit. When transferring a substrate from the exposure module to the plurality of post-exposure bake units, the controller performs control to select a post-exposure bake unit in which the least delay time occurs, among the plurality of post-exposure bake units and to transfer the substrate to the selected post-exposure bake unit.

Abstract: An image sensing device includes a pixel circuit, a readout circuit, and a row driver. The pixel circuit is configured to output a pixel signal in response to a selection signal. The readout circuit is configured to output a digital signal corresponding to the pixel signal, generate a gain control signal based on a first pixel signal received from the pixel circuit, provide the gain control signal to the pixel circuit, receive a second pixel signal output by the pixel circuit using the gain control signal, and output a digital signal corresponding to the second pixel signal. The row driver is configured to provide the selection signal to the pixel circuit while maintaining the selection signal at a first level while the readout circuit provides the gain control signal to the pixel circuit and the pixel circuit outputs the second pixel signal to the readout circuit.

Abstract: An image sensing device includes a pixel circuit, a readout circuit, and a row driver. The pixel circuit is configured to output a pixel signal in response to a selection signal. The readout circuit is configured to output a digital signal corresponding to the pixel signal, generate a gain control signal based on a first pixel signal received from the pixel circuit, provide the gain control signal to the pixel circuit, receive a second pixel signal output by the pixel circuit using the gain control signal, and output a digital signal corresponding to the second pixel signal. The row driver is configured to provide the selection signal to the pixel circuit while maintaining the selection signal at a first level while the readout circuit provides the gain control signal to the pixel circuit and the pixel circuit outputs the second pixel signal to the readout circuit.

Abstract: A swizzle pattern generator is provided to reduce an overhead due to execution of a swizzle instruction in vector processing. The swizzle pattern generator is configured to provide swizzle patterns with respect to data sets of at least one vector register or vector processing unit. The swizzle pattern generator may be reconfigurable to generate various swizzle patterns for different vector operations.

Abstract: An image sensor includes a plurality of pixels. Each of the plurality of pixels includes a photodetector that includes a photoelectric conversion element that outputs a detection signal in response to light incident thereon, a comparator that compares the detection signal of the photodetector with a ramp signal and outputs a comparison signal in response thereto, a plurality of first memory cells that store a first counting value corresponding to a first voltage level of the detection signal using the comparison signal of the comparator and output the first counting value through a plurality of transmission lines, and a plurality of second memory cells that store a second counting value corresponding to a second voltage level of the detection signal using the comparison signal of the comparator and output the second counting value through the plurality of transmission lines.

Abstract: A semiconductor device includes a substrate having a first surface and a second surface opposite to the first surface. A device isolation layer which defines a first region, a second region, and a support region in the substrate. The second region has a smaller width than the first region, and the support region is between the first region and the second region. A photoelectric conversion element is in the first region. The support region is continuous with the first region and the second region. The device isolation layer has an integral insulation structure which extends through the substrate from the first surface of the substrate to the second surface of the substrate.

Abstract: A digital pixel includes a photo diode connected to a first node and configured to generate an optical signal from an incident light, a storage diode configured to store the optical signal in a second node, a floating diffusion node configured to output a detection signal based on the optical signal, a first transmission transistor connected between the first and second nodes, and configured to transmit the optical signal from the first node to the second node, a second transmission transistor connected between the second node and the floating diffusion node, and configured to transmit the optical signal from the second node to the floating diffusion node, and a discharge transistor connected to the first node and configured to be turned on in a section in which the second transmission transistor is turned on to discharge a parasitic charge generated in the first node.