Patents by Inventor Woong Sun

Woong Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060258049
    Abstract: Disclosed herein is a method of bonding solder pads of a flip-chip package. This invention relates to a method of bonding solder pads having different sizes to each other, when a bonding operation is executed between a chip and a PCB, between chips, or between PCBs. On a side having a larger solder pad, a general solder ball is used. Conversely, on a side having a smaller solder pad, a solder ball having a core is used. The core serves to maintain a predetermined interval between the chip and the PCB or between the chips, after the bonding operation has been completed. The solder bonded parts are aligned with each other so as to perform a final bonding operation. In a conventional flip-chip package, solder pads provided on a bonded part must have the same or similar size. According to this invention, even if the size difference between the solder pads is large, bonding is possible, thus ensuring electrical and mechanical reliability.
    Type: Application
    Filed: April 13, 2006
    Publication date: November 16, 2006
    Inventors: Woong-Sun Lee, Jin Yu
  • Publication number: 20030176347
    Abstract: The invention presents a therapeutic agent (and progress suppressant) for amyotrophic lateral sclerosis (ALS) containing HGF and/or HGF gene as active ingredient. HGF has an effect of improving the motor function of ALS and life span through two actions, that is, direct neuronutrient factor activity on motoneurons, and indirect improving action of glutamate cytotoxicity on motoneurons by maintaining the level of glutamate transporter in astrocytes. Hence, HGF and/or HGF gene can be used as an effective therapeutic agent not known in the past.
    Type: Application
    Filed: May 14, 2003
    Publication date: September 18, 2003
    Inventors: Toshikazu Nakamura, Hiroshi Funakoshi, Woong Sun
  • Patent number: 6110276
    Abstract: A method for making n-type semiconducting diamond by use of CVD in which n-type impurities are doped simultaneously with the deposition of diamond. As the n-type impurities, an Li compound and a B compound, both, are used at once. After doping, a diamond film thus obtained is etched to peel off its surface. The n-type semiconducting diamond is superior in specific resistivity, 10.sup.-2 .OMEGA.cm or less.
    Type: Grant
    Filed: February 24, 1998
    Date of Patent: August 29, 2000
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Jin Yu, Woong Sun Lee, Jung Keun Kim