Abstract: A color correction device for an image sensor is provided. The image sensor is divided into regions. The color correction device includes a quantum efficiency (QE) measurement circuit, an addressing circuit, and a correction circuit. The QE measurement circuit generates a color signal according to a sensing signal from each pixel of the image sensor. The addressing circuit receives the color signal corresponding to each pixel, obtains a location of each pixel on the image sensor, and averages all of the color signals corresponding to the pixels whose locations are disposed in one of the regions to obtain an average color signal. The correction circuit receives the average color signal to obtain a color correction matrix of the one of the regions and corrects the color signals of the pixels whose locations are in the one of the regions by the color correction matrix.

Abstract: An imaging apparatus includes a filter, a first image sensor and a second image sensor. The filter transmits a first light in a range of wavelengths and reflects a reflected light out of the range of wavelengths. An incident light is split to the first light and the reflected light. The first image sensor receives the first light to generate a first image signal. The second image sensor receives the reflected light to generate a second image signal.

Abstract: A manufacturing method of microlenses includes providing a substrate; forming a microlens material on the substrate; disposing a mask over the microlens material; performing an exposure process by a radiant beam emitted to the microlens material via the mask; performing a developing process on the microlens material; and forming microlenses by performing a reflow process on the microlens material.

Abstract: A method for correcting pixel information of color pixels on a color filter array of an image sensor includes: establishing an M×M distance factor table, selecting M×M pixels of the color filter array, calculating a red/green/blue-color contribution from the red/green/blue pixels to a target pixel in the selected M×M pixels, calculating a red/blue/green-color pixel performance of the target pixel, calculating a red/blue/green-color correcting factor, obtaining a corrected pixel information of each of the red/green/blue pixels, by applying the red/green/blue-color correcting factor to the measured pixel information of each of the red/green/blue pixels.

Abstract: A method for correcting pixel information of color pixels on a color filter array of an image sensor includes: establishing an M×M distance factor table, selecting M×M pixels of the color filter array, calculating a red/green/blue-color contribution from the red/green/blue pixels to a target pixel in the selected M×M pixels, calculating a red/blue/green-color pixel performance of the target pixel, calculating a red/blue/green-color correcting factor, obtaining a corrected pixel information of each of the red/green/blue pixels, by applying the red/green/blue-color correcting factor to the measured pixel information of each of the red/green/blue pixels.

Abstract: The invention provides a light emitting semiconductor structure, which includes a substrate; a first LED chip formed on the substrate; an adhesion layer formed on the first LED chip; and a second light emitting diode chip formed on the adhesion layer, wherein the second LED chip has a first conductive wire which is electrically connected to the substrate.

Abstract: A method for correcting pixel information of color pixels on a color filter array of an image sensor includes: establishing an M×M distance factor table, selecting M×M pixels of the color filter array, calculating a red/green/blue-color contribution from the red/green/blue pixels to a target pixel in the selected M×M pixels, calculating a red/blue/green-color pixel performance of the target pixel, calculating a red/blue/green-color correcting factor, obtaining a corrected pixel information of each of the red/green/blue pixels, by applying the red/green/blue-color correcting factor to the measured pixel information of each of the red/green/blue pixels.

Abstract: The invention provides a light emitting semiconductor structure, which includes a substrate; a first LED chip formed on the substrate; an adhesion layer formed on the first LED chip; and a second light emitting diode chip formed on the adhesion layer, wherein the second LED chip has a first conductive wire which is electrically connected to the substrate.

Abstract: A light-emitting diode package is provided. The light-emitting diode package comprises a substrate and a first metal layer disposed over the substrate. A solder layer is disposed on the first metal layer and a light-emitting diode chip is disposed on the solder layer, wherein the light-emitting diode chip comprises a conductive substrate and a multilayered epitaxial structure formed on the conductive substrate, and wherein the conductive substrate is adjacent to the solder layer.

Abstract: A chip package and a fabrication method thereof are provided. The chip package includes a substrate and a chip disposed over the substrate. A solder layer is disposed between the chip and the substrate. A conductive pad is disposed between the solder layer and the substrate, wherein the conductive pad includes a first portion disposed under the solder layer, a second portion disposed away from the first portion and a connective portion disposed between the first portion and the second portion. The connective portion has a width which is narrower than a width of the first portion along a first direction perpendicular to a second direction extending from the first portion to the connective portion.

Abstract: The invention provides a light emitting semiconductor structure, which includes a substrate; a first LED chip formed on the substrate; an adhesion layer formed on the first LED chip; and a second light emitting diode chip formed on the adhesion layer, wherein the second LED chip has a first conductive wire which is electrically connected to the substrate.

Abstract: Light emitting devices conformally covered by a luminescent material layer are presented. A light emitting device includes a semiconductor light emitting die attached to a substrate. At least one bond pad is disposed on the semiconductor light emitting die. A luminescent material layer conformally covers the semiconductor light emitting die, wherein the luminescent material layer has at least one opening corresponding to and exposing the at least one bond pad. At least one wirebond is electrically connected to the at least one bond pad and a contact pad on the substrate.

Abstract: A chip package and a fabrication method thereof are provided. The chip package includes a substrate and a chip disposed over the substrate. A solder layer is disposed between the chip and the substrate. A conductive pad is disposed between the solder layer and the substrate, wherein the conductive pad includes a first portion disposed under the solder layer, a second portion disposed away from the first portion and a connective portion disposed between the first portion and the second portion. The connective portion has a width which is narrower than a width of the first portion along a first direction perpendicular to a second direction extending from the first portion to the connective portion.

Abstract: An illumination device includes a light source positioned on an illumination axis, a lens assembly having at least two biconvex lenses disposed on the illumination axis, and a reflector having a reflecting surface enclosing the lens assembly. The light source emits a first group of light beams which directly impinge of the lens assembly, and a second group of light beams which directly impinge on the reflector. The second group of light beams being reflected by the reflecting surface such that they surround the first group of light beams after being refracted by the lens assembly, without such second group of light beams impinging on the lens assembly.

Abstract: A light-emitting diode package is provided. The light-emitting diode package comprises a substrate and a first metal layer disposed over the substrate. A solder layer is disposed on the first metal layer and a light-emitting diode chip is disposed on the solder layer, wherein the light-emitting diode chip comprises a conductive substrate and a multilayered epitaxial structure formed on the conductive substrate, and wherein the conductive substrate is adjacent to the solder layer.

Abstract: A light-emitting device (LED) chip is disclosed. The LED chip includes a body having a light extraction surface. The body includes semiconductor layers including an n-type region and a p-type region. A plurality of micro-lenses is directly on the light extraction surface of the body. A pair of bond pads is electrically connected to the n-type and p-type regions, respectively. A method for fabricating the LED chip and an LED package with the LED chip are also disclosed.

Abstract: A white light-emitting diode package with tunable color temperature is provided, including a package substrate with a first light emitting diode (first LED) disposed over a first portion of the substrate and a second light emitting diode (second LED) disposed over a second portion different from the first portion of the substrate. A phosphor layer is coated around the first and second LED, wherein the phosphor layer is formed by blending at least one colored phosphor grain with a transparent optical resin, and the at least one colored phosphor grain in the transparent optical resin is excited by light from the first and second LED to react and emit white light. In one embodiment, the first and second LED are both blue LEDs for emitting blue light of different wavelengths or ultraviolet (UV) LEDs for emitting UV light of different wavelengths.

Abstract: An ultraviolet light emitting diode package structure is disclosed, comprising a substrate with a through-silicon via (TSV) disposed therein, a first electrode disposed on a top side of the substrate, and a second electrode disposed on a bottom side of the substrate, wherein the first electrode and the second electrode are electrically connected through the TSV, an ultraviolet light emitting diode bonded to the top side of the substrate, and a cover substrate bonded to the substrate, wherein the cover substrate comprises a cavity for receiving the ultraviolet light emitting diode.

Abstract: An embodiment of the invention provides a light emitting device, which includes: a first substrate made of a semiconductor material or a ceramic material; a first hole having extending direction from a first side toward an opposite second side and from a first surface toward an opposite second surface of the first substrate; a second hole having extending direction from the first side toward the second side and from the first surface toward the second surface; a light emitting element disposed overlying the first surface and having a first electrode and a second electrode; a first conducting layer overlying a first sidewall of the first hole and electrically connected to the first electrode; and a second conducting layer overlying a second sidewall of the second hole and electrically connected to the second electrode.

Abstract: Light emitting devices conformally covered by a luminescent material layer are presented. A light emitting device includes a semiconductor light emitting die attached to a substrate. At least one bond pad is disposed on the semiconductor light emitting die. A luminescent material layer conformally covers the semiconductor light emitting die, wherein the luminescent material layer has at least one opening corresponding to and exposing the at least one bond pad. At least one wirebond is electrically connected to the at least one bond pad and a contact pad on the substrate.