Patents by Inventor WU SONG

WU SONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120122031
    Abstract: The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer and a radiation sensitive acid generator. The imaging polymer includes a first monomeric unit having a pendant acid labile moiety and a second monomeric unit containing a reactive ether moiety, an isocyanide moiety or an isocyanate moiety. The patterning forming method utilizes an organic solvent developer to selectively remove unexposed regions of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.
    Type: Application
    Filed: November 15, 2010
    Publication date: May 17, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Kuang-Jung Chen, Sen Liu, Wu-Song Huang, Wai-Kin Li
  • Publication number: 20120112302
    Abstract: A method of improving the focus leveling response of a semiconductor wafer is described. The method includes combining organic and inorganic or metallic near infrared (NIR) hardmask on a semiconductor substrate; forming an anti-reflective coating (ARC) layer on the combined organic NIR-absorption and the inorganic or metallic NIR-absorption hardmask; and forming a photoresist layer on the ARC layer. A semiconductor structure is also described including a substrate, a resist layer located over the structure; and an absorptive layer located over the substrate. The absorptive layer includes an inorganic or metallic NIR-absorbing hardmask layer.
    Type: Application
    Filed: November 8, 2010
    Publication date: May 10, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Wai-Kin Li, Wu-Song Huang, Dario Leonardo Goldfarb, Martin Glodde, Edward Engbrecht, Yiheng Xu
  • Patent number: 8158014
    Abstract: A stack of a second photoresist having a second photosensitivity and a first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on a substrate. A first pattern is formed in the first photoresist by a first exposure and a first development, while the second photoresist underneath remains intact. A second pattern comprising an array of lines is formed in the second photoresist. An exposed portion of the second photoresist underneath a remaining portion of the first photoresist forms a narrow portion of a line pattern, while an exposed portion of the second photoresist outside the area of the remaining portions of the photoresist forms a wide portion of the line pattern. Each wide portion of the line pattern forms a bulge in the second pattern, which increases overlay tolerance between the second pattern and the pattern of conductive vias.
    Type: Grant
    Filed: June 16, 2008
    Date of Patent: April 17, 2012
    Assignee: International Business Machines Corporation
    Inventors: Wu-Song Huang, Wai-kin Li, Ping-Chuan Wang
  • Publication number: 20120074819
    Abstract: A piezoceramic transducer (PZT transducer) and a method for manufacturing the same are provided. The PZT transducer includes a piezoceramic substrate and an electrode unit. The piezoceramic substrate has a first surface and a second surface opposite the first surface, and has a mechanical quality factor (Qm) greater than 1400. The electrode unit has a first electrode and a second electrode. The first electrode is disposed on the first surface and has a first diameter. The second electrode covers the second surface and extends to cover a part of the surface at a periphery of the first surface, and the part of the second electrode covering the second surface has a second diameter. The ratio of the first diameter to the second diameter is 0.498 to 0.502. The PZT transducer has a large mist amount and a long service life.
    Type: Application
    Filed: December 16, 2010
    Publication date: March 29, 2012
    Applicant: CHINA STEEL CORPORATION
    Inventors: CHENG-SHENG YU, WU-SONG CHUNG
  • Publication number: 20120070782
    Abstract: A composition of matter. The composition of matter includes a polymer having an ethylenic backbone and comprising a first monomer having an aromatic moiety, a second monomer having a base soluble moiety or an acid labile protected base soluble moiety, and a third monomer having a fluoroalkyl moiety. Also a photoresist formulation including the composition of matter and a method of imaging using the photoresist formulation including the composition of matter.
    Type: Application
    Filed: November 22, 2011
    Publication date: March 22, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Wu-Song Huang, Irene Popova, Pushkara Rao Varanasi, Libor Vyklicky
  • Publication number: 20120070787
    Abstract: A method for reducing a photoresist critical dimension, the method comprising depositing a photoresist film on a substrate, wherein the photoresist film includes a thermal base generator; patterning the photoresist film to form a first patterned film possessing a first critical dimension; depositing a crosslinkable film over the first patterned film; heat-activating the first patterned film, either before or after depositing the crosslinkable film, to release a base in the first patterned film and cause crosslinking in the crosslinkable film in contact with the first patterned film; and developing the crosslinkable film to remove non-crosslinked soluble portions therein to form a second patterned film possessing a reduced critical dimension compared to the first critical dimension.
    Type: Application
    Filed: September 16, 2010
    Publication date: March 22, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Wu-Song Huang, Kuang-Jung Chen, Wai-Kin Li, Sen Liu
  • Patent number: 8137893
    Abstract: A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line.
    Type: Grant
    Filed: January 1, 2011
    Date of Patent: March 20, 2012
    Assignee: International Business Machines Corporation
    Inventors: Sean David Burns, Matthew E. Colburn, Steven John Holmes, Wu-Song Huang
  • Publication number: 20120028476
    Abstract: Embodiments of the present invention provide a method of forming a semiconductor structure. The method includes forming a set of shapes on top of a substrate; applying a layer of copolymer covering the substrate; causing the copolymer to form a plurality of cylindrical blocks both inside and outside the shapes; forming a pattern of contact holes from the plurality of cylindrical blocks; and transferring the pattern of contact holes to the substrate to form the semiconductor structure. In one embodiment, the shapes are rings and forming the set of shapes includes forming a set of rings that are equally and squarely spaced. In another embodiment, causing the copolymer to form the plurality of cylindrical blocks includes forming only one cylindrical block inside each of the rings and only one cylindrical block outside every four (4) squarely neighboring rings.
    Type: Application
    Filed: July 29, 2010
    Publication date: February 2, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Wai-Kin Li, Wu-Song Huang, Joy Cheng, Kuang-Jung Chen
  • Patent number: 8097401
    Abstract: A composition of matter. The composition of matter includes a polymer having an ethylenic backbone and comprising a first monomer having an aromatic moiety, a second monomer having a base soluble moiety or an acid labile protected base soluble moiety, and a third monomer having a fluoroalkyl moiety. Also a photoresist formulation including the composition of matter and a method of imaging using the photoresist formulation including the composition of matter.
    Type: Grant
    Filed: March 24, 2009
    Date of Patent: January 17, 2012
    Assignee: International Business Machines Corporation
    Inventors: Wu-Song Huang, Irene Popova, Pushkara Rao Varanasi, Libor Vyklicky
  • Patent number: 8053172
    Abstract: Photolithography compositions and methods. A first layer of a first photoresist is formed on a substrate. A second layer of a second photoresist is formed directly onto the first layer. The second polymer of the second photoresist includes an absorbing moiety. The second layer is patternwise imaged and developed, resulting in removal of base-soluble regions. A relief pattern from the second layer remains. The relief pattern and the first layer are exposed to a second dose of the radiation. The polymer in the relief pattern absorbs a portion of the second dose. A fraction of the second dose passes through the at least one region of the relief pattern and exposes at least one region of the first layer. The relief pattern and base-soluble regions of the first layer are removed. A relief pattern from the first layer remains. A second photolithography method and a photoresist composition are also included.
    Type: Grant
    Filed: February 21, 2008
    Date of Patent: November 8, 2011
    Assignee: International Business Machines Corporation
    Inventors: Scott David Halle, Wu-Song Huang, Ranee Wai-Ling Kwong, Pushkara R. Varanasi
  • Publication number: 20110262862
    Abstract: A composition comprising (A) a near-infrared absorbing dye of formula (1), (B) a polymer, and (C) a solvent is used to form a near-infrared absorptive layer. In formula (1), R1 and R2 are a monovalent hydrocarbon group which may contain a heteroatom, k is 0 to 5, m is 0 or 1, n is 1 or 2, Z is oxygen, sulfur or C(R?)(R?), R? and R? are hydrogen or a monovalent hydrocarbon group which may contain a heteroatom, and X? is an anion.
    Type: Application
    Filed: April 21, 2011
    Publication date: October 27, 2011
    Inventors: Masaki OHASHI, Seiichiro Tachibana, Kazumi Noda, Shozo Shirai, Takeshi Kinsho, Wu-Song Huang, Dario L. Goldfarb, Wai-Kin Li, Martin Glodde
  • Publication number: 20110262863
    Abstract: A near-infrared absorptive layer is formed from a composition comprising (A) an acenaphthylene polymer, (B) a near-infrared absorbing dye, and (C) a solvent. When a multilayer film comprising the near-infrared absorptive layer and a photoresist layer is used in optical lithography, the detection accuracy of optical auto-focusing is improved, allowing the optical lithography to produce a definite projection image with an improved contrast and succeeding in forming a better photoresist pattern.
    Type: Application
    Filed: April 21, 2011
    Publication date: October 27, 2011
    Inventors: Seiichiro TACHIBANA, Masaki Ohashi, Kazumi Noda, Shozo Shirai, Takeshi Kinsho, Wu-Song Huang, Dario L. Goldfarb, Wai-Kin Li, Martin Glodde
  • Publication number: 20110256486
    Abstract: An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.
    Type: Application
    Filed: June 13, 2011
    Publication date: October 20, 2011
    Applicant: International Business Machines Corporation
    Inventors: Timothy A. Brunner, Sean D. Burns, Kuang-Jung Chen, Wu-Song Huang, Kafai Lai, Wai-Kin Li, Bernhard R. Liegl
  • Patent number: 8029975
    Abstract: A resist composition and a method for forming a patterned feature on a substrate. The composition comprises a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, and a photosensitive acid generator. The method includes providing a composition including a photosensitive acid generator and a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, forming a film of the composition on the substrate, patternwise imaging the film, wherein at least one region of the film is exposed to radiation or a beam of particles, resulting in production of an acid catalyst in the exposed region, baking the film, developing the film, resulting in removal of base-soluble exposed regions, wherein a patterned feature from the film remains following the removal.
    Type: Grant
    Filed: July 24, 2009
    Date of Patent: October 4, 2011
    Assignee: International Business Machines Corporation
    Inventors: James J. Bucchignano, Wu-Song Huang, Pushkara R. Varanasi, Roy R. Yu
  • Patent number: 8021828
    Abstract: A structure and a photolithography method. The method includes forming a first layer of a first photoresist including a first polymer and a first photosensitive acid generator. A second layer of a second photoresist, including a second polymer having at least one phenyl or phenolic moiety, is formed directly onto the first layer. The second layer is patternwise imaged, resulting in exposing at least one first portion. The first portion is removed, revealing at least one first region of the first layer. A second portion of the second layer remains forming a structure having opaque regions. The structure and first region are exposed. The opaque regions shield from radiation at least one second region of the first layer, resulting in producing acid in the first region and in the structure. The structure and base-soluble regions of the first layer are removed. A structure is also described.
    Type: Grant
    Filed: February 21, 2008
    Date of Patent: September 20, 2011
    Assignee: International Business Machines Corporation
    Inventors: Wu-Song Huang, Ranee Wai-Ling Kwong, Pushkara R. Varanasi
  • Patent number: 7960095
    Abstract: Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.
    Type: Grant
    Filed: February 11, 2004
    Date of Patent: June 14, 2011
    Assignee: International Business Machines Corporation
    Inventors: Wayne M. Moreau, Marie Angelopoulos, Wu-Song Huang, David R. Medeiros, Karen E. Petrillo
  • Publication number: 20110129652
    Abstract: A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line.
    Type: Application
    Filed: January 1, 2011
    Publication date: June 2, 2011
    Applicant: International Business Machines Corporation
    Inventors: Sean David Burns, Matthew E. Colburn, Steven John Holmes, Wu-Song Huang
  • Patent number: 7944055
    Abstract: The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured.
    Type: Grant
    Filed: May 3, 2010
    Date of Patent: May 17, 2011
    Assignee: International Business Machines Corporation
    Inventors: Robert D. Allen, Phillip J. Brock, Blake W. Davis, Wu-Song S. Huang, Qinghuang Lin, Alshakim Nelson, Sampath Purushothaman, Ratnam Sooriyakumaran
  • Publication number: 20110111345
    Abstract: Coating compositions include a polymer including: wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality; X1, X2, X3 are independently H or CH3; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.
    Type: Application
    Filed: November 6, 2009
    Publication date: May 12, 2011
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Robert D. Allen, Phillip J. Brock, Kuang-Jung Chen, Alexander Friz, Wu-Song Huang, Ratnam Sooriyakumaran, Sally A. Swanson, Hoa D. Truong
  • Publication number: 20110091947
    Abstract: The present invention relates a high-purity purification method for omega-3 highly unsaturated fatty acids. More specifically, it relates to a high-purity purification method for omega-3 highly unsaturated fatty acids which is both environmentally friendly and easy to implement and comprises the steps of: a) preparing a fatty acid ethyl ester (FAEE) by ethanolysis of a natural oil or fat, using ethanol, in the presence of an enzyme catalyst extracted from at least one microorganism selected from the group consisting of Candida genus, Rhizopus genus, Mucor genus, Aspergillus genus and Pseudomonas genus; b) subjecting the said prepared fatty acid ethyl ester to preliminary distillation using short-path distillation (SPD) device between 100 and 200° C. and between 0.001 and 10 mmHg; c) forming a concentrated fatty acid by subjecting the ethyl ester, which has been subjected to the preliminary distillation, to reduced-pressure fractional distillation at between 100 and 200° C. and between 0.
    Type: Application
    Filed: June 3, 2009
    Publication date: April 21, 2011
    Applicant: AK BIOTECH CO., LTD.
    Inventors: Gap Jin Kim, Hong Joo Son, Wu Song Whang, Yoon Mo Koo, Jin IL Kim, Jin Hyo Yang