Abstract: A radiation-sensitive composition (and method of fabricating a device using the composition) includes a nonpolymeric silsesquioxane including at least one acid labile moiety, a polymer including at least one member selected from the group consisting of an aqueous base soluble moiety and an acid labile moiety, and a radiation-sensitive acid generator. Another radiation-senstive composition (and method of fabricating a device using the composition) includes a nonpolymerc silsesquioxane including at least one aqueous base soluble moiety, a polymer including an aqueous base soluble moiety, a crosslinker, and a radiation-sensitive acid generator.

Abstract: A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

Abstract: A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

Abstract: A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line.

Abstract: The present invention provides a method of forming a threshold voltage adjusted gate stack in which an external acid diffusion process is employed for selectively removing a portion of a threshold voltage adjusting layer from one device region of a semiconductor substrate. The external acid diffusion process utilizes an acid polymer which when baked exhibits an increase in acid concentration which can diffuse into an underlying exposed portion of a threshold voltage adjusting layer. The diffused acid reacts with the exposed portion of the threshold voltage adjusting layer providing an acid reacted layer that can be selectively removed as compared to a laterally adjacent portion of the threshold voltage adjusting layer that is not exposed to the diffused acid.

Abstract: Organic coating compositions, particularly antireflective coating compositions, are provided that can be developed with an aqueous alkaline developer, including in a single step during development of an overcoated photoresist layer. Preferred coating compositions comprise a tetrapolymer that comprises at least four distinct functional groups.

Abstract: A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

Abstract: A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

Abstract: A second photoresist having a second photosensitivity is formed on a substrate. A first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on the second photoresist. Preferably, the first photoresist is a gray resist that becomes transparent upon exposure. At least one portion of the first photoresist is lithographically exposed employing a first reticle having a first pattern to form at least one transparent lithographically exposed resist portion, while the second photoresist remains intact. The second photoresist is lithographically exposed employing a second reticle including a second pattern to form a plurality of lithographically exposed shapes in the second photoresist. The plurality of lithographically exposed shapes have a composite pattern which is the derived from the second pattern by limiting the second pattern only within the area of the at least one transparent lithographically exposed resist pattern.

Abstract: A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.

Abstract: A method to mitigate resist pattern critical dimension (CD) variation in a double-exposure process generally includes forming a photoresist layer over a substrate; exposing the photoresist layer to a first radiation; developing the photoresist layer to form a first pattern in the photoresist layer; forming a topcoat layer over the photoresist layer; exposing the topcoat layer and the photoresist layer to a second radiation; removing the topcoat layer; and developing the photoresist layer to form a second pattern in the photoresist layer.

Abstract: A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.

Abstract: A photoresist composition and methods using the photoresist composition in multiple exposure/multiple layer processes. The photoresist composition includes a polymer comprising repeat units having a hydroxyl moiety; a photoacid generator; and a solvent. The polymer when formed on a substrate is substantially insoluble to the solvent after heating to a temperature of about 150° C. or greater. One method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second non photoresist layer on the substrate and patterned first photoresist layer. Another method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second photoresist layer on the substrate and patterned first photoresist layer and patternwise exposing the second photoresist layer.

Abstract: A composition of matter. The composition of matter includes a polymer having an ethylenic backbone and comprising a first monomer having an aromatic moiety, a second monomer having a base soluble moiety or an acid labile protected base soluble moiety, and a third monomer having a fluoroalkyl moiety. Also a photoresist formulation including the composition of matter and a method of imaging using the photoresist formulation including the composition of matter.

Abstract: A photoresist composition and methods using the photoresist composition in multiple exposure/multiple layer processes. The photoresist composition includes a polymer comprising repeat units having a hydroxyl moiety; a photoacid generator; and a solvent. The polymer when formed on a substrate is substantially insoluble to the solvent after heating to a temperature of about 150° C. or greater. One method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second non photoresist layer on the substrate and patterned first photoresist layer. Another method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second photoresist layer on the substrate and patterned first photoresist layer and patternwise exposing the second photoresist layer.

Abstract: The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured.

Abstract: Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and aliphatic alcohol moieties have been found which are especially useful as developable bottom antireflective coatings in 193 nm lithographic processes. The compositions enable improved lithographic processes which are especially useful in the context of subsequent ion implantation or other similar processes where avoidance of aggressive antireflective coating removal techniques is desired.

Abstract: The present invention relates to photolithography methods for enhancing lithographic imaging of isolated and semi-isolated features. A first layer of a first photoresist is formed over a substrate. A second layer of a second photoresist is formed over the first layer. The second photoresist includes a polymer containing an absorbing moiety. The second layer is exposed through a first patterned mask and developed to form a first relief image. The first relief image and the first layer are exposed through a second patterned mask. One of the first and the second patterned masks includes a dense pattern, while the other includes an isolated or a semi-isolated pattern. The first relief image and base soluble regions of the first layer are removed to form a second relief image with an isolated or a semi-isolated pattern. The second layer can also be bleachable upon exposure and bake in the present invention.

Abstract: The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for 193 nm lithography. The inventive composition is soluble in aqueous base solutions and has low refractive index at 193 nm. The inventive composition comprises an aqueous base-soluble polymer having a backbone and a fluorinated half ester moiety. The fluorinated half ester moiety is pendant from the backbone. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.

Abstract: A piezoelectric buzzer includes a housing unit, a buzzer unit, and first and second terminals. The housing unit includes first and second housings coupled together. The second housing includes a base plate and a pair of spaced apart insert seats, each of which protrudes inwardly from the base plate toward the first housing and is formed with an insert hole. The buzzer unit is disposed in the resonant chamber and includes a vibrating plate and a piezoelectric plate attached to the vibrating plate. The first and second terminals are inserted respectively into the insert holes of the insert seats, and have a respective connection section extending outwardly of the housing unit, and a respective extending section abutting against a respective one of the vibrating plate and the piezoelectric plate.