Abstract: A power amplifier module for amplifying radio frequency signals includes first and second radio frequency power amplifiers with one or more semiconductor transistors, adapted to receive an input radio frequency signal and a processed power-sensing control signal and to output an amplified radio frequency signal; first and second power-sensing circuits each coupled to said first and second radio frequency power amplifiers and adapted to receive each amplified radio frequency signal and to output the power-sensing control signal; and control logic that receives and processes the power-sensing control signals, and outputs a processed power-sensing control signal in response to each quality or magnitude of each amplified radio frequency signal.

Abstract: A field emission display (FED) having a grid plate with spacer structure and fabrication method thereof. A first plate having first electrodes and electron emitters on a first surface is provided. A second plate having second electrodes and phosphor regions on a second surface is also provided, wherein the second surface is opposite the first surface. A grid plate with spacer structure and passages having grid electrodes is positioned between the two plates to maintain a predetermined interval. When a specific voltage is applied between the first electrode and the second electrode, electrons extracted from the electron emitters are accelerated by the grid electrodes through the passages to impact the phosphor regions.

Abstract: Systems and methods are disclosed for a device having one or more power amplifier and/or LNA circuits positioned on the amplifier module.

Abstract: A power amplifier module for amplifying radio frequency signals includes first, second, third and fourth corner ground pads positioned at each corner of the power amplifier module; one or more radio frequency input pads positioned between the first and second corner ground pads; one or more radio frequency output pads positioned between the third and fourth corner ground pads; and one or more power amplifier circuits centrally positioned on the power amplifier module.

Abstract: A thin film transistor structure for a field emission display is disclosed, which has a substrate; a patterned poly-silicon layer having a source area, a drain area, and a channel on the substrate; a patterned first gate metal layer; a first gate-insulating layer sandwiched in between the poly-silicon layer and the first gate metal layer; a patterned second gate metal layer; and a second gate-insulating layer sandwiched in between the poly-silicon layer and the second gate metal layer; wherein the thickness of the second insulating layer is greater than that of the first gate-insulating layer, and the absolute voltage in the channel under the first gate metal layer is less than that under the second gate metal layer when a voltage higher than the threshold voltage thereof is applied to both of the first gate metal layer and the second gate metal layer.

Abstract: Systems and methods are disclosed for a device having one or more active substrates comprising substantially transistors or diodes formed thereon; one of more passive substrate comprising substantially inductors, capacitors or resistors formed thereon; a plurality of bonding pads positioned on the active and passive substrates; and bonding wires connected to the bonding pads.

Abstract: A power amplifier module for amplifying radio frequency signals includes a radio frequency power amplifier including one or more semiconductor transistors, adapted to receive an input radio frequency signal and power control signals, and to output an amplified radio frequency signal. The power amplifier module is integrated with input and output impedance matching networks and a power sensor that is adapted to receive the amplified radio frequency signal and to output a signal indicating the power output level of the power amplifier module. The power amplifier module also includes control logic in accordance to at least one of the qualities and the power level of the amplified radio frequency signal.

Abstract: A triode structure of a field emission display and fabrication method thereof. A plurality of cathode layers arranged in a matrix is formed overlying a dielectric layer. A plurality of emitting layers arranged in a matrix is formed overlying the cathode layers, respectively. A plurality of lengthwise-extending gate lines is formed on the dielectric layer, in which each of the gate layers is disposed between two adjacent columns of the cathode layers.

Abstract: A mobile phone hand-free extension device includes a FM radio transmitter with an active frequency searching circuitry to utilize a vehicular FM radio receiver for reproducing the audio signals from the mobile phone. The active frequency searching circuitry in this invention automatically detects which frequency band the vehicular FM radio receiver is currently using and set the RF frequency of the FM transmitter to the detected frequency. The FM transmitter relays the audio signals from the mobile phone by transmitting the audio signals through radio wave to the vehicular FM radio receiver to be reproduced by the speaker of the receiver.

Abstract: An organic integrated device for thin film transistor and light emitting diode. The organic integrated device of the present invention includes a top-gate organic thin film transistor (top-gate OTFT) and an organic light emitting diode (OLED), both formed on the same substrate. In the organic integrated device, some layers can be commonly used by both OTFT and OLED, and some layers can be made of the same material and formed in the same course, which simplifies the entire process.

Abstract: A power amplifier module for amplifying radio frequency signals includes a radio frequency power amplifier including one or more semiconductor transistors, adapted to receive an input radio frequency signal and power control signals, and to output an amplified radio frequency signal. The power amplifier module is integrated with input and output impedance matching networks and a power sensor that is adapted to receive the amplified radio frequency signal and to output a signal indicating the power output level of the power amplifier module. The power amplifier module also includes control logic in accordance to at least one of the qualities and the power level of the amplified radio frequency signal.

Abstract: A power amplifier module for amplifying radio frequency signals includes first and second radio frequency power amplifiers with one or more semiconductor transistors, adapted to receive an input radio frequency signal and a processed power-sensing control signal and to output an amplified radio frequency signal; first and second power-sensing circuits each coupled to said first and second radio frequency power amplifiers and adapted to receive each amplified radio frequency signal and to output the power-sensing control signal; and control logic that receives and processes the power-sensing control signals, and outputs a processed power-sensing control signal in response to each quality or magnitude of each amplified radio frequency signal.

Abstract: A power amplifier module for amplifying radio frequency signals includes a radio frequency power amplifier including one or more semiconductor transistors, adapted to receive an input radio frequency signal and power control signals, and to output an amplified radio frequency signal. The power amplifier module is integrated with input and output impedance matching networks and a power sensor that is adapted to receive the amplified radio frequency signal and to output a signal indicating the power output level of the power amplifier module. The power amplifier module also includes control logic in accordance to at least one of the qualities and the power level of the amplified radio frequency signal.

Abstract: The invention provides an organic thin film transistor array substrate, comprising: a substrate, having a liquid crystal display area and an organic thin film transistor area; a pixel electrode, formed on the substrate in the LCD area; a first alignment film, formed on the pixel electrode; a second alignment film, formed on the substrate in the OTFT area; an organic semiconductor layer, formed on the second alignment film, wherein the organic semiconductor layer is aligned along the direction of the second alignment film; and a gate, a source and a drain, formed in the OTFT area, wherein the source and the drain are in contact with the organic semiconductor layer and a channel is formed between the source and the drain.

Abstract: A nanotube field emission display. The nanotube field emission display includes a nanotube field emission cell, an active device, and a capacitor. The nanotube field emission cell includes a cathode, a gate, and an anode, wherein the cathode has nanotubes for field emission where the gate is used. The active device includes a first electrode, a second electrode, and a control electrode, wherein the second electrode is coupled to the gate of the nanotube field emission cell. The capacitor is coupled between the gate of the nanotube field emission cell and a voltage source to store gate voltage to control illumination and gray level of the nanotube field emission cell.

Abstract: The invention provides an organic thin film transistor array substrate, comprising: a substrate, having a liquid crystal display area and an organic thin film transistor area; a pixel electrode, formed on the substrate in the LCD area; a first alignment film, formed on the pixel electrode; a second alignment film, formed on the substrate in the OTFT area; an organic semiconductor layer, formed on the second alignment film, wherein the organic semiconductor layer is aligned along the direction of the second alignment film; and a gate, a source and a drain, formed in the OTFT area, wherein the source and the drain are in contact with the organic semiconductor layer and a channel is formed between the source and the drain.

Abstract: An organic thin film transistor array substrate including a substrate divided into an LCD region and an OTFT region; a first dielectric layer formed on the substrate in the LCD region and having a first uneven portion; an organic semiconducting layer formed on the substrate in the OTFT region; a gate, source, and drain formed in the OTFT region, wherein the source and drain are in contact with the organic semiconducting layer to form a channel between the source and drain; and a pixel electrode formed on the first uneven portion of the first dielectric layer in the LCD region.

Abstract: A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.

Abstract: A thin film transistor structure for a field emission display is disclosed, which has a substrate; a patterned poly-silicon layer having a source area, a drain area, and a channel on the substrate; a patterned first gate metal layer; a first gate-insulating layer sandwiched in between the poly-silicon layer and the first gate metal layer; a patterned second gate metal layer; and a second gate-insulating layer sandwiched in between the poly-silicon layer and the second gate metal layer; wherein the thickness of the second insulating layer is greater than that of the first gate-insulating layer, and the absolute voltage in the channel under the first gate metal layer is less than that under the second gate metal layer when a voltage higher than the threshold voltage thereof is applied to both of the first gate metal layer and the second gate metal layer.

Abstract: A combination tool for assembling and dismantling a lock nut includes a middle column, two clamping blocks, a guide rod, and two links. Thus, the two clamping blocks, the two links and the middle column are interconnected with each other and are moved in concert with each other, so that the distance between the two clamping blocks can be adjusted rapidly and arbitrarily, thereby facilitating the user operating the combination tool.