Abstract: A tool for depositing multilayer coatings onto a substrate. The tool includes a housing defining a vacuum chamber connected to a vacuum source, deposition stations each configured to deposit a layer of multilayer coating on the substrate, a curing station, and a contamination reduction device. At least one of the deposition stations is configured to deposit an inorganic layer, while at least one other deposition station is configured to deposit an organic layer. In one tool configuration, the substrate may travel back and forth through the tool as many times as needed to achieve the desired number of layers of multilayer coating. In another, the tool may include numerous housings adjacently spaced such that the substrate may make a single unidirectional pass. The contamination reduction device may be configured as one or more migration control chambers about at least one of the deposition stations, and further includes cooling devices, such as chillers, to reduce the presence of vaporous layer precursors.

Abstract: A tool for depositing multilayer coatings onto a substrate. The tool includes a housing defining a vacuum chamber connected to a vacuum source, deposition stations each configured to deposit a layer of multilayer coating on the substrate, a curing station, and a contamination reduction device. At least one of the deposition stations is configured to deposit an inorganic layer, while at least one other deposition station is configured to deposit an organic layer. In one tool configuration, the substrate may travel back and forth through the tool as many times as needed to achieve the desired number of layers of multilayer coating. In another, the tool may include numerous housings adjacently spaced such that the substrate may make a single unidirectional pass. The contamination reduction device may be configured as one or more migration control chambers about at least one of the deposition stations, and further includes cooling devices, such as chillers, to reduce the presence of vaporous layer precursors.

Abstract: The present invention provides a reactor and a method for the production of high purity silicon granules. The reactor includes a reactor chamber; and the reaction chamber is equipped with a solid feeding port, auxiliary gas inlet, raw material gas inlet, and exhaust gas export. The reaction chamber is also equipped with an internal gas distributor; a heating unit; an external exhaust gas processing unit connected between a preheating unit and a gas inlet. The reaction chamber is further equipped with a surface finishing unit, a heating unit and a dynamics generating unit. The reaction is through decomposition of silicon-containing gas in densely stacked high purity granular silicon layer reaction bed in relative motion, and to use remaining heat of exhaust gas for reheating. The present invention achieves a large scale, efficient, energy saving, continuous, low cost production of high purity silicon granules.

Abstract: The present invention provides a reactor and a method for the production of high purity silicon granules. The reactor includes a reactor chamber; and the reaction chamber is equipped with a solid feeding port, auxiliary gas inlet, raw material gas inlet, and exhaust gas export. The reaction chamber is also equipped with an internal gas distributor; a heating unit; an external exhaust gas processing unit connected between a preheating unit and a gas inlet. The reaction chamber is further equipped with a surface finishing unit, a heating unit and a dynamics generating unit. The reaction is through decomposition of silicon containing gas in densely stacked high purity granular silicon layer reaction bed in relative motion, and to use remaining heat of exhaust gas for reheating. The present invention is to achieve a large scale, efficient, energy saving, continuous, low cost production of high purity silicon granules.

Abstract: The present invention provides a reactor and a method for the production of high purity silicon granules. The reactor includes a reactor chamber; and the reaction chamber is equipped with a solid feeding port, auxiliary gas inlet, raw material gas inlet, and exhaust gas export. The reaction chamber is also equipped with an internal gas distributor; a heating unit; an external exhaust gas processing unit connected between a preheating unit and a gas inlet. The reaction chamber is further equipped with a surface finishing unit, a heating unit and a dynamics generating unit. The reaction is through decomposition of silicon containing gas in densely stacked high purity granular silicon layer reaction bed in relative motion, and to use remaining hear of exhaust gas for reheating. The present invention is to achieve a large scale, efficient, energy saving, continuous, low cost production of high purity silicon granules.

Abstract: In one embodiment of the invention, the silane and hydrogen (and inert gas) mixture is produced using catalytic gasification of silicon (or si-containing compounds including silicon alloys) with a hydrogen source such as hydrogen gas, atomic hydrogen and proton. By not separating silane from hydrogen and co-purifying all the gases (silane and hydrogen, inert gas) in the gas mixture simultaneously, the mixture is co-purified and then provide feed stock for downstream application without further diluting the silane gas. One aspect of the invention addresses the need for an improved production method, apparatus and composition for silane gas mixtures for large scale low cost manufacturing of high purity silicon and distributed on-site turnkey applications including but not limited to the manufacture of semiconductor integrated circuits, photovoltaic solar cells, LCD-flat panels and other electronic devices.

Abstract: A duplex scanning apparatus includes an automatic document feeder and a flatbed scanner. The automatic document feeder includes a first scanning module. The flatbed scanner includes a second scanning module and a first calibration plate. The first calibration plate is disposed on the second scanning module, and includes a calibration plate first end, a calibration plate second end and a calibration plate middle part. A first included angle is defined between the calibration plate first end and the calibration plate middle part, and a second included angle is defined between the calibration plate second end and the calibration plate middle part. As such, each of a distance between the calibration plate first end and the first scanning module and a distance between the calibration plate second end and the first scanning module is shorter than a distance between the calibration plate middle part and the first scanning module.

Abstract: The invention provides methods and systems for producing large size diamonds. The methods include using carbon containing gases and supplementary gases to form reaction zones that are suitable for diamonds to grow; controlling the temperatures that are suitable for diamonds to grow; and keeping the small size seeds in motion in the reaction zones to form large size diamonds. The method provides controlling the high temperature endurable small size seeds at suitable temperatures for diamonds to grow and keep them in motion in the reaction zones. The invention also provides systems that allow all the surfaces of the high temperature endurable small size seeds continually extend to form diamonds, then to form large size diamonds. The invention provides a large-scale, low cost production of large size diamonds.

Abstract: The present invention provides a reactor and a method for the production of high purity silicon granules. The reactor includes a reactor chamber; and the reaction chamber is equipped with a solid feeding port, auxiliary gas inlet, raw material gas inlet, and exhaust gas export. The reaction chamber is also equipped with an internal gas distributor; a heating unit; an external exhaust gas processing unit connected between a preheating unit and a gas inlet. The reaction chamber is further equipped with a surface finishing unit, a heating unit and a dynamics generating unit. The reaction is through decomposition of silicon containing gas in densely stacked high purity granular silicon layer reaction bed in relative motion, and to use remaining hear of exhaust gas for reheating. The present invention is to achieve a large scale, efficient, energy saving, continuous, low cost production of high purity silicon granules.

Abstract: A duplex scanning apparatus includes an automatic document feeder and a flatbed scanner. The automatic document feeder includes a first scanning module. The flatbed scanner includes a second scanning module and a first calibration plate. The first calibration plate is disposed on the second scanning module, and includes a calibration plate first end, a calibration plate second end and a calibration plate middle part. A first included angle is defined between the calibration plate first end and the calibration plate middle part, and a second included angle is defined between the calibration plate second end and the calibration plate middle part. As such, each of a distance between the calibration plate first end and the first scanning module and a distance between the calibration plate second end and the first scanning module is shorter than a distance between the calibration plate middle part and the first scanning module.

Abstract: Methods of encapsulating an environmentally sensitive device. The methods involve temporarily laminating a flexible substrate to a rigid support using a reversible adhesive for processing, reversing the reversible adhesive, and removing the device from the rigid support.

Abstract: Methods of sealing environmentally sensitive devices and vacuum insulation panels are described. One method includes: providing first and second substrates; placing the environmentally sensitive device between the first and second substrates; sealing the first and second substrates together with an adhesive, the adhesive having an exposed portion; and covering the exposed portion of the adhesive with a barrier layer, or with a barrier stack comprising at least one decoupling layer and at least one barrier layer.

Abstract: An improved barrier stack. The barrier stack is made by the process of depositing the polymeric decoupling layer on a substrate; depositing a first inorganic layer on the decoupling layer under a first set of conditions wherein an ion and neutral energy arriving at the substrate is less than about 20 eV so that the first inorganic layer is not a barrier layer, wherein a temperature of the substrate is less than about 150° C.; and depositing a second inorganic layer on the first inorganic layer under a second set of conditions wherein an ion and neutral energy arriving at the substrate is greater than about 50 eV so that the second inorganic layer is a barrier layer. Methods of reducing damage to a polymeric layer in a barrier stack are also described.

Abstract: A method of making an edge-sealed, encapsulated environmentally sensitive device. The method includes providing an environmentally sensitive device on a substrate; depositing a decoupling layer through one mask, the decoupling layer adjacent to the environmentally sensitive device, the decoupling layer having a discrete area and covering the environmentally sensitive device; increasing the distance between the one mask and the substrate; and depositing a first barrier layer through the one mask, the first barrier layer adjacent to the decoupling layer, the first barrier layer having an area greater than the discrete area of the decoupling layer and covering the decoupling layer, the decoupling layer being sealed between the edges of the first barrier layer and the substrate or an optional second barrier layer.

Abstract: Methods of making an edge-sealed, encapsulated environmentally sensitive device. One method includes providing an environmentally sensitive device with a contact on a substrate; depositing a decoupling layer adjacent to the environmentally sensitive device, the decoupling layer having a discrete area and covering the environmentally sensitive device and not covering the contact, the decoupling layer deposited using a printing process; depositing a first barrier layer adjacent to the decoupling layer, the first barrier layer having a first area greater than the discrete area of the decoupling layer, and the first barrier layer having a second area covering the decoupling layer and the contact, the decoupling layer being sealed between the edges of the first barrier layer and the substrate or an optional second barrier layer; and removing the second area of the first barrier layer from the contact.

Abstract: A method of making an encapsulated plasma sensitive device. The method comprises: providing a plasma sensitive device adjacent to a substrate; depositing a plasma protective layer on the plasma sensitive device using a process selected from non-plasma based processes, or modified sputtering processes; and depositing at least one barrier stack adjacent to the plasma protective layer, the at least one barrier stack comprising at least one decoupling layer and at least one barrier layer, the plasma sensitive device being encapsulated between the substrate and the at least one barrier stack, wherein the decoupling layer, the barrier layer, or both are deposited using a plasma process, the encapsulated plasma sensitive device having a reduced amount of damage caused by the plasma compared to an encapsulated plasma sensitive device made without the plasma protective layer. An encapsulated plasma sensitive device is also described.

Abstract: An improved barrier stack. The barrier stack is made by the process of depositing the polymeric decoupling layer on a substrate; depositing a first inorganic layer on the decoupling layer under a first set of conditions wherein an ion and neutral energy arriving at the substrate is less than about 20 eV so that the first inorganic layer is not a barrier layer, wherein a temperature of the substrate is less than about 150° C.; and depositing a second inorganic layer on the first inorganic layer under a second set of conditions wherein an ion and neutral energy arriving at the substrate is greater than about 50 eV so that the second inorganic layer is a barrier layer. Methods of reducing damage to a polymeric layer in a barrier stack are also described.

Abstract: An analog signal gain control circuit(ASGC) for a digital radio HomePlug orthogonal frequency division multiplexing (OFDM) receiver includes a digital variable gain amplifier (DVGA) to control the gain of a received signal to achieve a desired signal amplitude to match a dynamic range of an analog-to-digital converter (ADC), an inverse scaling stage controlled to inverse-scale the signal output by the ADC, and a two-stage fast attack and slow decay filter that outputs control signals to the DVGA and to the inverse scaling stage. The fast attack and slow decay filter rapidly responds to an increase in signal amplitude and slowly decays the amplitude of the control signal in response to a decrease in input signal amplitude.

Abstract: The present invention provides devices for beating heart surgery. The device separates the valve and the surrounding area from the rest of the vascular system so the operation procedure can be carried out while the heart is beating during the entire course of the procedure. This is made possible through a temporary valve (170) and two coronary artery conducts (130, 140) incorporated in the balloon-catheter system. The system provides better view and ease of operation and thus, reduces surgery related complication and pains.

Abstract: A method of making an encapsulated plasma sensitive device. The method comprises: providing a plasma sensitive device adjacent to a substrate; depositing a plasma protective layer on the plasma sensitive device using a process selected from non-plasma based processes, or modified sputtering processes; and depositing at least one barrier stack adjacent to the plasma protective layer, the at least one barrier stack comprising at least one decoupling layer and at least one barrier layer, the plasma sensitive device being encapsulated between the substrate and the at least one barrier stack, wherein the decoupling layer, the barrier layer, or both are deposited using a plasma process, the encapsulated plasma sensitive device having a reduced amount of damage caused by the plasma compared to an encapsulated plasma sensitive device made without the plasma protective layer. An encapsulated plasma sensitive device is also described.