Patents by Inventor Xia Xu

Xia Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030048498
    Abstract: An optical performance monitor for measuring the performance of optical networks has an echelle grating for demultiplexing an input beam into a plurality of wavelengths that are focused onto an array of divided output waveguides. Each divided output waveguide is positioned to receive a corresponding demultiplexed wavelength from the echelle grating or other waveguide multiplexer device. The divided output waveguides laterally separate the corresponding demultiplexed wavelength into a first and second portions. A detector array is positioned to receive the respective portions of the demultiplexed wavelengths and by comparing their relative intensity it is possible to detect any drift in the nominal wavelengths of the channels.
    Type: Application
    Filed: November 8, 2001
    Publication date: March 13, 2003
    Inventors: Matt Pearson, Lynden Erickson, John Miller, Siegfried Janz, Dan-Xia Xu, Pavel Cheben, Andre Delage, Boris Lamontagne, Sylvain Charbonneau
  • Publication number: 20020079427
    Abstract: According to this invention, silicon-based photodetectors using waveguides formed with silicide regions can have high speed and high efficiency for near IR applications. Utilizing the unique properties of suicides, the proposed method provides a simple and elegant way to implement a photodetector design in which photogenerated carriers travel perpendicular to the direction of light propagation. Therefore, the speed and quantum efficiency of the photodetector may be optimized independently. This device configuration may be implemented in one of the two approaches: (a) waveguides formed through surface silicidation of a silicon-based layer of a substrate (b) waveguides formed through silicidation of ridge waveguide side-walls of a silicon-based layer of a substrate; The use of mature silicon technology promises low cost of production and other benefits.
    Type: Application
    Filed: December 19, 2001
    Publication date: June 27, 2002
    Inventors: Dan-Xia Xu, Siegfried Janz
  • Patent number: 6331445
    Abstract: In order to fabricate a photonic device with an enhanced photoresponse at 155 nm, a plurality of undulating quantum well layers are grown on said substrate in a three dimensional growth mode to defeat the limitations imposed by strain on the maximum layer thickness. The quantum wells typically are formed by epitaxially growing alternating layers of Si1−x,Gex, and Si on a silicon substrate.
    Type: Grant
    Filed: May 7, 1999
    Date of Patent: December 18, 2001
    Assignee: National Research Council of Canada
    Inventors: Siegfried Janz, Hughes Lafontaine, Dan-Xia Xu