Patents by Inventor Xian-an Cao

Xian-an Cao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230234336
    Abstract: The present invention relates to a self-adhesive waterproof coiled material of a super-strong cross laminated film, comprising sequentially from top to bottom: an isolation protection layer, a non-asphalt-based self-adhesive layer, a strong cross laminated film, an asphalt self-adhesive layer and a PE isolation film. One side of the upper surface of the coiled material is provided with an overlap edge, and the other side of the lower surface of the coiled material is also provided with an overlap edge. The waterproof coiled material provided in the present invention has better adhesive property with post-cast concrete than an asphalt-based coiled material, and can be better bonded to a main body structure (i.e.
    Type: Application
    Filed: July 27, 2021
    Publication date: July 27, 2023
    Inventors: Dongqi ZHAO, Jingfeng SONG, Qingyu LI, Cheng ZHANG, Xian CAO, Tao LU
  • Patent number: 10975492
    Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.
    Type: Grant
    Filed: January 11, 2019
    Date of Patent: April 13, 2021
    Assignee: SLT TECHNOLOGIES, INC.
    Inventors: Mark Philip D'Evelyn, Kristi Jean Narang, Dong-Sil Park, Huicong Hong, Xian-An Cao, Larry Qiang Zeng
  • Publication number: 20190249328
    Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.
    Type: Application
    Filed: January 11, 2019
    Publication date: August 15, 2019
    Inventors: Mark Philip D'Evelyn, Kristi Jean Narang, Dong-Sil Park, Huicong Hong, Xian-An Cao, Larry Qiang Zeng
  • Patent number: 10208396
    Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: February 19, 2019
    Assignee: Soraa, Inc.
    Inventors: Mark Philip D'Evelyn, Kristi Jean Narang, Dong-Sil Park, Huicong Hong, Xian-An Cao, Larry Qiang Zeng
  • Publication number: 20160319457
    Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.
    Type: Application
    Filed: March 4, 2016
    Publication date: November 3, 2016
    Applicant: MOMENTIVE PERFORMANCE MATERIALS INC.
    Inventors: Mark Philip D'Evelyn, Kristi Jean Narang, Dong-Sil Park, Huicong Hong, Xian-An Cao, Larry Qiang Zeng
  • Patent number: 9279193
    Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.
    Type: Grant
    Filed: November 9, 2006
    Date of Patent: March 8, 2016
    Assignee: Momentive Performance Materials Inc.
    Inventors: Mark Philip D'Evelyn, Kristi Jean Narang, Dong-Sil Park, Huicong Hong, Xian-An Cao, Larry Qiang Zeng
  • Patent number: 8946174
    Abstract: The present invention relates to a nucleic acid encoding a polypeptide and the use of the nucleic acid or polypeptide in preventing and/or treating cancer. In particular, the invention relates to improved vectors for the insertion and expression of foreign genes encoding tumor antigens for use in immunotherapeutic treatment of cancer.
    Type: Grant
    Filed: September 23, 2010
    Date of Patent: February 3, 2015
    Assignee: Sanofi Pasteur Limited
    Inventors: Neil Berinstein, Corey Lovitt, Mark Parrington, Artur Pedyczak, Laszlo Radvanyi, Scott Gallichan, Devender Singh-Sandhu, Raymond P. Oomen, Shi-Xian Cao
  • Patent number: 8710611
    Abstract: A sensing device is used to detect the spatial distributions of stresses applied by physical contact with the surface of the sensor or induced by pressure, temperature gradients, and surface absorption. The sensor comprises a hybrid active layer that includes luminophores doped in a polymeric or organic host, altogether embedded in a matrix. Under an electrical bias, the sensor simultaneously converts stresses into electrical and optical signals. Among many applications, the device may be used for tactile sensing and biometric imaging.
    Type: Grant
    Filed: January 19, 2012
    Date of Patent: April 29, 2014
    Assignee: West Virginia University
    Inventor: Xian-An Cao
  • Patent number: 8698135
    Abstract: A method is disclosed for elevating the work function of conductive layers such as indium tin oxide by chlorine-containing plasma exposure or etching. Also disclosed are electronic devices such as organic light-emitting diodes and organic photovoltaic cells with a chlorine plasma-treated conductive layer as the hole-injecting or hole-accepting electrode. The performance of the devices is enhanced due to an increased work function of the plasma-treated electrode.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: April 15, 2014
    Assignee: West Virginia University
    Inventor: Xian-An Cao
  • Publication number: 20130240853
    Abstract: A method is disclosed for elevating the work function of conductive layers such as indium tin oxide by chlorine-containing plasma exposure or etching. Also disclosed are electronic devices such as organic light-emitting diodes and organic photovoltaic cells with a chlorine plasma-treated conductive layer as the hole-injecting or hole-accepting electrode. The performance of the devices is enhanced due to an increased work function of the plasma-treated electrode.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 19, 2013
    Applicant: West Virginia University
    Inventor: Xian-An Cao
  • Publication number: 20120187368
    Abstract: A sensing device is used to detect the spatial distributions of stresses applied by physical contact with the surface of the sensor or induced by pressure, temperature gradients, and surface absorption. The sensor comprises a hybrid active layer that includes luminophores doped in a polymeric or organic host, altogether embedded in a matrix. Under an electrical bias, the sensor simultaneously converts stresses into electrical and optical signals. Among many applications, the device may be used for tactile sensing and biometric imaging.
    Type: Application
    Filed: January 19, 2012
    Publication date: July 26, 2012
    Applicant: West Virginia University
    Inventor: Xian-An Cao
  • Publication number: 20120017825
    Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.
    Type: Application
    Filed: November 9, 2006
    Publication date: January 26, 2012
    Applicant: General Electric Company
    Inventors: Mark Philip D'Evelyn, Kristi Jean Narang, Dong-Sil Park, Huicong Hong, Xian-An Cao, Larry Qiang Zeng
  • Publication number: 20110117640
    Abstract: The present invention relates to a nucleic acid encoding a polypeptide and the use of the nucleic acid or polypeptide in preventing and/or treating cancer. In particular, the invention relates to improved vectors for the insertion and expression of foreign genes encoding tumor antigens for use in immunotherapeutic treatment of cancer.
    Type: Application
    Filed: September 23, 2010
    Publication date: May 19, 2011
    Inventors: Neil Berinstein, Corey Lovitt, Mark Parrington, Artur Pedyczak, Laszlo Radvanyi, Scott Gallichan, Devender Singh-Sandhu, Raymond P. Oomen, Shi-Xian Cao
  • Patent number: 7851213
    Abstract: The present invention relates to a nucleic acid encoding a polypeptide and the use of the nucleic acid or polypeptide in preventing and/or treating cancer. In particular, the invention relates to improved vectors for the insertion and expression of foreign genes encoding tumor antigens for use in immunotherapeutic treatment of cancer.
    Type: Grant
    Filed: July 1, 2003
    Date of Patent: December 14, 2010
    Assignee: Sanofi Pasteur Limited
    Inventors: Neil Berinstein, Corey Lovitt, Mark Parrington, Artur Pedyczak, Laszlo Radvanyi, Scott Gallichan, Devender Singh-Sandhu, Raymond P. Oomen, Shi-Xian Cao
  • Patent number: 7582498
    Abstract: A method may produce a resonant cavity light emitting device. A seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid may provide a medium for mass transport of gallium nitride precursors therebetween. A seed crystal surface may be prepared by applying a first thermal profile between the seed gallium nitride crystal and the source material. Gallium nitride material may be grown on the prepared surface of the seed gallium nitride crystal by applying a second thermal profile between the seed gallium nitride crystal and the source material while the seed gallium nitride crystal and the source material are in the nitrogen-containing superheated fluid. A stack of group III-nitride layers may be deposited on the single-crystal gallium nitride substrate. The stack may include a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.
    Type: Grant
    Filed: December 6, 2005
    Date of Patent: September 1, 2009
    Assignee: Momentive Performance Materials Inc.
    Inventors: Mark Philip D'Evelyn, Xian-An Cao, Anping Zhang, Steven Francis LeBoeuf, Huicong Hong, Dong-Sil Park, Kristi Jean Narang
  • Publication number: 20090142373
    Abstract: A virus neutralizing level of antibodies to a primary HIV isolate is generated in a host by a prime-boost administration of antigents. The primary antigen is a DNA molecule encoding an envelop glycoprotein of a primary isolate of HIV-1 while the boosting antigen is either a non-infectious, non-replicating HIV-like particle having the envelope glycoprotein of a primary isolate of HIV-1 or an attenuated viral vector expressing an envelope glycoprotein of a primary isolate of HIV-1.
    Type: Application
    Filed: September 18, 2008
    Publication date: June 4, 2009
    Inventors: Benjamin Rovinski, James Tartaglia, Shi-Xian Cao, Roy Persson, Michel H. Klein
  • Patent number: 7229625
    Abstract: Non-infectious, retrovirus-like particles contain mutations to reduce gag-dependent RNA-packaging of the gag gene product, eliminate reverse transcriptase activity of the pol gene product, eliminate integrase activity of the pol gene product and eliminate RNase H activity of the pol gene product through genetic manipulation of the gag and pol genes. The corresponding nucleic acid molecules are described. The non-infectious, retrovirus-like particles have utility in in vivo administration including to humans and in diagnosis.
    Type: Grant
    Filed: April 22, 2005
    Date of Patent: June 12, 2007
    Assignee: Sanofi Pasteur Limited
    Inventors: Benjamin Rovinski, Shi-Xian Cao, Fei-Long Yao, Roy Persson, Michel H. Klein
  • Patent number: 7220826
    Abstract: A vector for eliciting an immune response to a host comprising a gene encoding the gp140 protein of the primary isolate of HIV-1, BX08, under the control of a promotor for expression of the protein in the host, specifically plasmids pCMV.gp140.BX08, pMP83, pMP84 and pMP88. Murine and human MHC class 1-restricted binding motifs contained in BX08 are identified.
    Type: Grant
    Filed: February 24, 2000
    Date of Patent: May 22, 2007
    Assignee: Sanofi Pasteur Limited
    Inventors: Charles D. Y. Sia, Shi-Xian Cao, Roy Persson, Benjamin Rovinski, Mark Parrington
  • Publication number: 20070096239
    Abstract: A semiconductor device includes a substrate comprising a material selected from the group consisting of AlN, SiC, GaN, sapphire and combinations thereof. An n+ type epitaxial layer is disposed above substrate and comprises GaN or AlGaN. An n? type epitaxial layer is disposed above substrate and comprises GaN or AlGaN. A p+-n junction grid comprising p+ GaN or p+ AlGaN is formed on selective areas of the n? type epitaxial layer. A metal layer is disposed over the p+-n junction grid and forms a Schottky contact. Another metal layer is deposited on one of the substrate and the n+ type epitaxial layer and forms a cathode electrode. A method of fabricating a semiconductor device is provided and includes forming a p+-n junction grid on a drift layer comprising GaN or AlGaN.
    Type: Application
    Filed: October 31, 2005
    Publication date: May 3, 2007
    Inventors: Xian-An Cao, Stephen Arthur
  • Publication number: 20070097366
    Abstract: Embodiments of the invention include a particle detection system that includes a light emitting source, a non-collimating reflector, a collimating reflector, and a detector. Light from the light emitting source is directed by the non-collimating reflector to an area through which a particle stream may be transmitted. Fluorescent light from the light striking particles is redirected to the collimating reflector and then on to the detector. Other embodiments include a single pump used to pull a pair of fluid flows through the detection system. Other embodiments include a plurality of light emitting sources whose light is directed to a particle stream by a single reflector. Other embodiments include a method for detecting particles.
    Type: Application
    Filed: October 31, 2005
    Publication date: May 3, 2007
    Inventors: Steven LeBoeuf, Alexei Vertiatchikh, Stanton Weaver, Radislav Potyrailo, Xian-An Cao