Abstract: An LED device (90) includes: an epitaxial structure (100) having a plurality of layers of semiconductor material and forming an active light-generating region (120) which generates light in response to electrical power being supplied to the LED device (90); and, a substrate (200) that is substantially transparent in a wavelength range corresponding to the light generated by the active light-generating region (120). The substrate has first and second opposing end faces (202, 206) and a plurality of side walls (210) extending therebetween, including a first side wall having a first portion thereof that defines a first surface (212, 214, 216, 218) which is not substantially normal to the first face (202) of the substrate (200). The epitaxial structure (100) is disposed on the first face (202) of the substrate (200).

Abstract: A method for increasing carrier concentration in a semiconductor includes providing a group III nitride semiconductor device, determining a wavelength that increases carrier concentration in the semiconductor device, and directing at least one infrared light source, at the determined wavelength, into a semiconductor device excitation band.

Abstract: A flip chip light emitting diode die (10, 10?, 10?) includes a light-transmissive substrate (12, 12?, 12?) and semiconductor layers (14, 14?, 14?) that are selectively patterned to define a device mesa (30, 30?, 30?). A reflective electrode (34, 34?, 34?) is disposed on the device mesa (30, 30?, 30?). The reflective electrode (34, 34?, 34?) includes a light-transmissive insulating grid (42, 42?, 60, 80) disposed over the device mesa (30, 30?, 30?), an ohmic material (44, 44?, 44?, 62) disposed at openings of the insulating grid (42, 42?, 60, 80) and making ohmic contact with the device mesa (30, 30?, 30?), and an electrically conductive reflective film (46, 46?, 46?) disposed over the insulating grid (42, 42?, 60, 80) and the ohmic material (44, 44?, 44?, 62). The electrically conductive reflective film (46, 46?, 46?) electrically communicates with the ohmic material (44, 44?, 44?, 62).

Abstract: A method may produce a resonant cavity light emitting device. A seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid may provide a medium for mass transport of gallium nitride precursors therebetween. A seed crystal surface may be prepared by applying a first thermal profile between the seed gallium nitride crystal and the source material. Gallium nitride material may be grown on the prepared surface of the seed gallium nitride crystal by applying a second thermal profile between the seed gallium nitride crystal and the source material while the seed gallium nitride crystal and the source material are in the nitrogen-containing superheated fluid. A stack of group III-nitride layers may be deposited on the single-crystal gallium nitride substrate. The stack may include a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.

Abstract: A light emitting device, such as a light emitting diode or a laser diode. The light emitting device comprises a light emitting semiconductor active region disposed on a substrate. The substrate comprises an optical absorption coefficient below about 100 cm?1 at wavelengths between 700 and 465 nm a GaN single crystal having a dislocation density of less than 104 per cm2 and an optical absorption coefficient below about 100 cm?1 at wavelengths between 700 and 465 nm. A method of making such a light emitting device is also provided.

Abstract: The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED's. In an embodiment of the invention, the UV-LED's are characterized by a base layer material including a substrate, a p-doped semiconductor material, a multiple quantum well, a n-doped semiconductor material, upon which base material a p-type metal resides and wherein the base structure has a mesa configuration, which mesa configuration may be rounded on a boundary surface, or which may be non-rounded, such as a mesa having an upper boundary surface that is flat. In other words, the p-type metal resides upon a mesa formed out of the base structure materials. In a more specific embodiment, the UV-LED structure includes n-type metallization layer, passivation layers, and bond pads positioned at appropriate locations of the device. In a more specific embodiment, the p-type metal layer is encapsulated in the encapsulating layer.

Abstract: In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal (14) and a source material (30) are arranged in a nitrogen-containing superheated fluid (44) disposed in a sealed container (10) disposed in a multiple-zone furnace (50). Gallium nitride material is grown on the seed gallium nitride crystal (14) to produce a single-crystal gallium nitride substrate (106, 106?). Said growing includes applying a temporally varying thermal gradient (100, 100?, 102, 102?) between the seed gallium nitride crystal (14) and the source material (30) to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers (112) is deposited on the single-crystal gallium nitride substrate (106, 106?), including a first mirror sub-stack (116) and an active region (120) adapted for fabrication into one or more resonant cavity light emitting devices (108, 150, 160, 170, 180).

Abstract: The present invention is directed toward methods for the production of non-infectious, replication-deficient, immunogenic human immunodeficiency virus (HIV)-like particles. These particles are prepared from a recombinant expression vector comprising a heterologous promoter operatively connected to a DNA molecule comprising a modified HIV genome devoid of the long terminal repeat (LTR) regulatory regions but containing at least the gag and pol genes in their natural genomic arrangement. This vector is introduced into mammalian cells to produce the particles of interest. These particles should prove useful in a number of diagnostic, virologic, and immunologic applications.

Abstract: A virus neutralizing level of antibodies to a primary HIV isolate is generated in a host by a prime-boost administration of antigens. The primary antigen is a DNA molecule encoding an envelop glycoprotein of a primary isolate of HIV-1 while the boosting antigen is either a non-infectious, non-replicating HIV-like particle having the envelope glycoprotein of a primary isolate of HIV-1 or an attenuated viral vector expressing an envelope glycoprotein of a primary isolate of HIV-1.

Abstract: Non-infectious, retrovirus-like particles contain mutations to reduce gag-dependent RNA-packaging of the gag gene product, eliminate reverse transcriptase activity of the pol gene product, eliminate integrase activity of the pol gene product and eliminate RNase H activity of the pol gene product through genetic manipulation of the gag and pol genes. The corresponding nucleic acid molecules are described. The non-infectious, retrovirus-like particles have utility in in vivo administration including to humans and in diagnosis.

Abstract: Non-infectious, retrovirus-like particles contain mutations to reduce gag-dependent RNA-packaging of the gag gene product, eliminate reverse transcriptase activity of the pol gene product, eliminate integrase activity of the pol gene product and eliminate RNase H activity of the pol gene product through genetic manipulation of the gag and pol genes. The corresponding nucleic acid molecules are described. The non-infectious, retrovirus-like particles have utility in in vivo administration including to humans and in diagnosis.

Abstract: A method for increasing carrier concentration in a semiconductor includes providing a group III nitride semiconductor device, determining a wavelength that increases carrier concentration in the semiconductor device, and directing at least one infrared light source, at the determined wavelength, into a semiconductor device excitation band.

Abstract: A flip chip light emitting diode die (10, 10?, 10?) includes a light-transmissive substrate (12, 12?, 12?) and semiconductor layers (14, 14?, 14?) that are selectively patterned to define a device mesa (30, 30?, 30?). A reflective electrode (34, 34?, 34?) is disposed on the device mesa (30, 30?, 30?). The reflective electrode (34, 34?, 34?) includes a light-transmissive insulating grid (42, 42?, 60, 80) disposed over the device mesa (30, 30?, 30?), an ohmic material (44, 44?, 44?, 62) disposed at openings of the insulating grid (42, 42?, 60, 80) and making ohmic contact with the device mesa (30, 30?, 30?), and an electrically conductive reflective film (46, 46?, 46?) disposed over the insulating grid (42, 42?, 60, 80) and the ohmic material (44, 44?, 44?, 62). The electrically conductive reflective film (46, 46?, 46?) electrically communicates with the ohmic material (44, 44?, 44?, 62).

Abstract: In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal (14) and a source material (30) are arranged in a nitrogen-containing superheated fluid (44) disposed in a sealed container (10) disposed in a multiple-zone furnace (50). Gallium nitride material is grown on the seed gallium nitride crystal (14) to produce a single-crystal gallium nitride substrate (106, 106?). Said growing includes applying a temporally varying thermal gradient (100, 100?, 102, 102?) between the seed gallium nitride crystal (14) and the source material (30) to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers (112) is deposited on the single-crystal gallium nitride substrate (106, 106?), including a first mirror sub-stack (116) and an active region (120) adapted for fabrication into one or more resonant cavity light emitting devices (108, 150, 160, 170, 180).

Abstract: A method for increasing carrier concentration in a semiconductor includes providing a group III nitride semiconductor device, determining a wavelength that increases carrier concentration in the semiconductor device, and directing at least one infrared light source, at the determined wavelength, into a semiconductor device excitation band.

Abstract: A light emitting device, such as a light emitting diode or a laser diode. The light emitting device comprises a light emitting semiconductor active region disposed on a substrate. The substrate comprises an optical absorption coefficient below about 100 cm−1 at wavelengths between 700 and 465 nm a GaN single crystal having a dislocation density of less than 104 per cm2 and an optical absorption coefficient below about 100 cm−1 at wavelengths between 700 and 465 nm. A method of making such a light emitting device is also provided.

Abstract: The present invention relates to a nucleic acid encoding a polypeptide and the use of the nucleic acid or polypeptide in preventing and/or treating cancer. In particular, the invention relates to improved vectors for the insertion and expression of foreign genes encoding tumor antigens for use in immunotherapeutic treatment of cancer.

Abstract: A virus neutralizing level of antibodies to a primary HIV isolate is generated in a host by a prime-boost administration of antigents. The primary antigen is a DNA molecule encoding an envelop glycoprotein of a primary isolate of HIV-1 while the boosting antigen is either a non-infectious, non-replicating HIV-like particle having the envelope glycoprotein of a primary isolate of HIV-1 or an attenuated viral vector expressing an envelope glycoprotein of a primary isolate of HIV-1.

Abstract: Non-infectious, retrovirus-like particles contain mutations to reduce gag-dependent RNA-packaging of the gag gene product, eliminate reverse transcriptase activity of the pol gene product, eliminate integrase activity of the pol gene product and eliminate RNase H activity of the pol gene product through genetic manipulation of the gag and pol genes. The corresponding nucleic acid molecules are described. The non-infectious, retrovirus-like particles have utility in in vivo administration including to humans and in diagnosis.

Abstract: Non-infectious, non-replicating immunogenic HIV-like particles are produced by stable long-term constitutive expression in mammalian cells by eliminating elements toxic to the mammalian cells. An expression vector contains a nucleic acid molecule comprising a modified HIV genome devoid of long terminal repeats and wherein Tat and vpr sequences are functionally disabled and a constitutive promoter operatively connected to the modified HIV genome for constitutive expression of the modified genome to produce the HIV-like particles.