Abstract: The present invention related to a crystalline form of compound 3-((L-valyl)amino)-1-propanesulfonic acid, preparation method and uses thereof.

Abstract: The disclosed systems and methods are directed towards: i) creating a specification data type using yet another next generation (YANG) language for indicating device specification data associated with a network device; ii) creating a YANG based device specification data model using the specification data type; iii) creating a YANG based device specification constraint model; iv) sharing the device specification data model and the device specification constraint model with a network management system and the network device; and v) use the device specification data model and the device specification constraint model to create or validate device configure data.

Abstract: The disclosure relates to a composite material for a secondary lithium-ion battery, and a preparation method therefor and the use thereof. The composite material for a secondary lithium-ion battery is such that: the interior thereof is a spherical porous hard carbon material having hollow holes, and a product resulting from the decomposition and deposition of a silicon-containing gas and one or more gaseous compounds containing any element of C, N, B and P are deposited in the pores, wherein the product comprises silicon nanoparticles, and the porous hard carbon material is obtained by means of curing a hard carbon matrix using a double emulsion method and then carbonizing same.

Abstract: The disclosed systems and methods for extracting a subtree structure from a YANG schema, the YANG schema comprising one or more YANG models, being a ramified hierarchical structure defining a plurality of nodes and relationships among the plurality of nodes and being representable under the form of a tree structure. The method comprises receiving the YANG schema and a set of extraction instructions, the extraction instructions comprising indication of one or more first nodes to be extracted from the YANG model. The one or more first nodes are further added to a set of nodes to be extracted. The method comprises executing an iterative identification process to update the set of nodes to be extracted, and further generating a trimmed YANG model based on the set of nodes to be extracted.

Abstract: A route planning method includes displaying a perspective switching control and a current perspective display area on a route planning interface. The perspective switching control is configured to switch a current perspective image in the current perspective display area from a first perspective image to a second perspective image in response to a perspective switching instruction. The first perspective image is one of a plurality of perspective images including a first-person perspective image and a third-person perspective image. The second perspective image is another one of the plurality of perspective images. The method further includes, in response to a waypoint creation instruction, creating a waypoint based on a position of a movable platform in the current perspective image.

Abstract: Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature. The methods may include forming plasma effluents of the silicon-containing precursor and depositing a silicon-containing material on the substrate. The methods may include providing a hydrogen-containing precursor to the processing region, forming plasma effluents of the hydrogen-containing precursor, and etching the silicon-containing material from a sidewall of the feature.

Abstract: The embodiment of the present disclosure provides a method and device for printing a reflecting layer of a backlight panel. The method includes performing first correction processing on at least two piezoelectric injection valves firstly, then acquiring specification parameters of the backlight panel, generating moving paths of the at least two piezoelectric injection valves according to the specification parameters of the backlight panel, and controlling the corrected piezoelectric injection valves to print according to the moving paths. The reflecting layer is printed by controlling the piezoelectric injection valves to achieve stepless change in the film thickness of the reflecting layer, and the method can be implemented before or after the die bonding process.

Abstract: Provided are a printing device and a method for an LED retaining wall of a display panel. The device includes a motion control system, an adsorption apparatus, a measuring system, a Z-axis controller, a target multi-needle module and a target station. The motion control system is configured to control printing of a target LED retaining wall on an upper surface of a target substrate on the target station. The adsorption apparatus is configured to make a lower surface of the target substrate adsorbed onto a sucker by a vacuum pump. The measuring system includes a sensor and a sensor controller, and the sensor is configured to measure flatness data of the target substrate. The Z-axis controller is configured to control a printing receiving distance between the target multi-needle module and the upper surface of the target substrate.

Abstract: The present disclosure provides a performance testing method and system for a polycarboxylate superplasticizer in a concrete system. An interface model is constructed based on a calcium silicate hydrate (C—S—H) gel model and a molecular dynamics model of a polycarboxylate superplasticizer, which can cover complexity of a cement particle interface and variability of the polycarboxylate superplasticizer, and can also establish a link between a microstructure of the polycarboxylate superplasticizer and a macroscopic fluidity of a cement across multiple scales. Meanwhile, friction resistance is accurately calculated based on the constructed interface model to accurately test a performance of the polycarboxylate superplasticizer, thereby shortening a screening cycle of the polycarboxylate superplasticizer and improving a performance optimization efficiency.

Abstract: The present application relates to a method (I) for preparing a brivaracetam intermediate, comprising the steps of dissolving the compound represented by B-P and 1S,2S-diphenylethylenediamine in a solvent for resolution, crystallizing, filtering, and recrystallizing to obtain the compound represented by B-Q, which is then converted to the brivaracetam intermediate represented by B-R. This method can effectively resolve the compound represented by B-P. The present application also provides a method for preparing brivaracetam using the compound represented by B-R. The method can separate the effective components only through simple steps such as extraction, washing, drying, and concentration without requiring use of chiral chromatography column to separate isomers in the preparation process, and thus the separation process is simple, greatly reducing the production cost of brivaracetam.

Abstract: The disclosure relates to bifunctional KRAS-modulating compounds having the structure K-L-T, where K is a targeting group that binds specifically to a KRAS protein (mutant or wild-type), T is an E3-ligase binding group, and L is absent or is a bivalent linking group that connects K and T together via a covalent linkage. Compounds and pharmaceutical compositions thereof can promote degradation of KRAS protein (mutant or wild-type) in a cell and are thus useful for treating, inhibiting, and preventing KRAS-associated diseases, disorders and conditions, including cancers.

Abstract: The disclosure relates to KRAS inhibitor compounds having the structure of Formula (I), pharmaceutical compositions thereof, and methods of use thereof for inhibiting, treating, and/or preventing KRAS-associated diseases, disorders and conditions.

Abstract: There are provided isotope-enriched compounds containing stable heavy isotope-enriched amide functional groups for modulating the pharmacokinetic profile, metabolic profile, and/or delivery efficiency of a drug or prodrug, as well as its therapeutic or prophylactic efficacy and/or adverse effects. Use of the isotope-enriched amide-containing drugs and prodrugs for the treatment or prevention of disease states and conditions is also provided.

Abstract: There are provided isotope-enriched compounds of Formula (I) and pharmaceutically acceptable salts or esters thereof, as well as pharmaceutical compositions thereof and methods of use thereof for prevention and treatment of amyloid-? related diseases, such as Alzheimer's disease.

Abstract: There are provided isotope-enriched compounds containing stable heavy isotope-enriched amide functional groups for modulating the pharmacokinetic profile, metabolic profile, and/or delivery efficiency of a drug or prodrug, as well as its therapeutic or prophylactic efficacy and/or adverse effects. Use of the isotope-enriched amide-containing drugs and prodrugs for the treatment or prevention of disease states and conditions is also provided.

Abstract: The present application relates to a kind of fused ring phenolic compound, or a pharmaceutically acceptable salt or ester thereof, in the manufacture of medicaments for treating, inhibiting or preventing bacterial infections. The disclosed fused ring phenolic compounds can inhibit PPK1 and PPK2 and can be used to treat infections or conditions caused by bacteria such as Pseudomonas aeruginosa.

Abstract: The disclosure relates to KRASG12D inhibitor compounds having the structure of Formula (A) or Formula (B), pharmaceutical compositions thereof, and methods of use thereof for inhibiting, treating, and/or preventing KRASG12D mutation-associated diseases, disorders and conditions.

Abstract: Embodiments of the present technology relate to semiconductor processing methods that include providing a structured semiconductor substrate including a trench having a bottom surface and top surfaces. The methods further include depositing a portion of a silicon-containing material on the bottom surface of the trench for at least one deposition cycle, where each deposition cycle includes: depositing the portion of the silicon-containing material on the bottom surface and top surfaces of the trench, depositing a carbon-containing mask layer on the silicon-containing material on the bottom surface of the trench, where the carbon-containing mask layer is not formed on the top surfaces of the trench, removing the portion of the silicon-containing material from the top surfaces of the trench, and removing the carbon-containing mask layer from the silicon-containing material on the bottom surface of the trench, where the as-deposited silicon-containing material remains on the bottom surface of the trench.