Abstract: The present disclosure relates to the technical field of chemical engineering, and specifically discloses a method for removing oxygenated compounds from a Fischer-Tropsch oil having a high carbon number. A reaction-extraction combined process is used in this method for removing oxygenated compounds from a Fischer-Tropsch oil having a high carbon number, wherein the Fischer-Tropsch oil (C5-C20) is firstly subjected to alkaline washing with an alkaline aqueous solution to convert acidic substances into water-soluble salts. The Fischer-Tropsch oil is subjected to a primary extraction with a carbonate-based extractant to remove alcohols and esters therein, and subsequently subjected to a secondary extraction with propylene carbonate to remove ketones and aldehydes impurities therein, thereby removing oxygenated compounds in the Fischer-Tropsch oil. After extraction, the content of the oxygenated compounds in the Fischer-Tropsch oil may be down to 1-60 ppm, and the yield of oil product may be kept 90% or more.

Abstract: The present application provides a terminal, a connector, and an electronic device. The terminal comprises: a first connection end (101) configured to be connected to a bonding pad in a circuit board (106); a second connection end (102) configured to be connected to a bonding pad in a chip (107); and a terminal body configured to connect the first connection end (101) and the second connection end (102). The terminal body comprises a connection arm communicated with the first connection end (101) and the second connection end (102); the connection arm is elastically deformable and is provided with a first connection portion (103) and a second connection portion (104); when the connection arm elastically deforms, the first connection portion (103) is in contact with the second connection portion (104) to enable the first connection end (101) to be communicated with the second connection end (102).

Abstract: A valve repair system and a coupling instrument thereof are provided. The coupling instrument includes a prosthesis holder (90) and a balloon (100). The prosthesis holder (90) includes at least two prosthetic members (91) arranged circumferentially around its own axis (H). Proximal end of each prosthetic member (91) is fixed in position radially with respect to the prosthesis holder (90). The balloon (100) is inflatable to expand to actuate distal ends of the prosthetic members (91) to cause them to transition from a first deflected configuration into a second deflected configuration. With this design, when the prosthetic members (91) are clampingly assembled with the valve clip in the first deflected configuration, they are inwardly urged into coupling engagement with the valve clip. This enables the prosthesis holder (90) to be assembled with the valve clip without left-to-right asymmetry of the prosthetic members (91).

Abstract: Embodiments of the disclosure provide a semiconductor structure and a method for forming the same. The semiconductor structure includes: a semiconductor substrate including a plurality of active areas and first isolation structures arranged at intervals along a first direction; gate structures located in the active areas and the first isolation structures. Top surfaces of the active areas extend beyond top surfaces of the gate structures; second isolation structures with a preset height located on surfaces of the gate structures, and the top surfaces of the second isolation structures are flush with the top surfaces of the active areas.

Abstract: The present disclosure provides a semiconductor structure and a manufacturing method thereof. The manufacturing method of the semiconductor structure includes: forming a first patterned mask layer on an upper surface of a first filling dielectric layer, the first patterned mask layer including a plurality of pattern units; etching the first filling dielectric layer based on the first patterned mask layer to form etched recesses; forming a second filling dielectric layer, the second filling dielectric layer filling up the etched recesses and covering the first patterned mask layer; removing the first patterned mask layer, and parts of the second filling dielectric layer on the first patterned mask layer and between the pattern units; removing the remaining first filling dielectric layer to form a plurality of capacitor contact holes exposing the substrate; and forming, in the capacitor contact holes, capacitor contact structures located on the two opposite sides of the BLs.

Abstract: Disclosed are a metal-insulator-metal (MIM) capacitor structure and a method for fabricating the structure. The MIM capacitor structure includes: a substrate; a capacitor structure comprising a bottom metal layer, an interlayer dielectric layer and a top metal layer sequentially stacked over the substrate; an opening extending downward through the top metal layer into the interlayer dielectric layer; a recess located at a side wall of the opening, and extending from a bottom of the opening downward into the interlayer dielectric layer; and a sidewall spacer located in the opening, which extends over a side wall of the top metal layer and downward into the recess so as to fill it up, wherein the interlayer dielectric layer is made of the same material as the sidewall spacer. The MIM capacitor structure and a fabricating method therefor can improve the breakdown voltage of the MIM capacitor structure.

Abstract: A transferring robot is disclosed in the disclosure. The transferring robot includes a movable chassis configured to move along a path among adjacent warehouse storage containers; a temporary storage shelf provided on the movable chassis, the temporary storage shelf being configured to store a target case; a fetching assembly provided on the movable chassis, the fetching assembly being configured to extend or retract horizontally relative to the movable chassis, so as to realize fetching and placing of the target case between the storage containers and the temporary storage shelf, where a direction along which the fetching assembly extends or retracts horizontally is perpendicular to a moving direction. A warehousing and logistics system includes the foregoing transferring robot. The disclosure further discloses a warehousing system and an item transferring method.

Abstract: A display substrate includes a base substrate, first electrodes arranged in an array on the base substrate, a first signal line, a second signal line crosswise arranged with the first signal line, and a pattern layer arranged at a same layer and made of a same material as the first electrode. An orthographic projection of the pattern layer on the base substrate does not overlap an orthographic projection of the first signal lines on the base substrate. The first electrode comprises a first strip electrode. An extension direction of the first strip electrode is intersected with a row direction and a column direction.

Abstract: A method comprises generating a PON frame comprising a plurality of FEC codewords, the FEC codewords comprise a first codeword, and the first codeword comprises a PSB; and transmitting the PON frame. A method comprises receiving a PON frame comprising a plurality of FEC codewords, the FEC codewords comprise a first codeword, and the first codeword comprises a PSB; and processing the PON frame.

Abstract: Linker-drug compounds and antibody-drug conjugates that bind to human oncology targets are disclosed. The linker-drug compounds and antibody-drug conjugates comprise a splicing modulator drug moiety. The disclosure further relates to methods and compositions for use in the treatment of neoplastic disorders by administering the antibody-drug conjugates provided herein.

Abstract: Disclosed is a post-plating treatment method for a one-step brass-electroplated steel wire, comprising the following steps: electroplating the surface of the steel wire with a brass alloy; immediately washing the electroplated steel wire with cold water, removing residues from the surface of the steel wire, and blow-drying the steel wire with cold air; immersing the blow-dried steel wire in a water-based coating solution; and taking the immersed steel wire out, blow-drying the steel wire with natural air, and taking the steel wire up. The water-based coating solution comprises a polyoxyethylene organic salt, sodium hypophosphite and the balance of pure water, the polyoxyethylene organic salt comprising a salt of alkyl polyoxyethylene ether phosphate and polyoxyethylene alkylamine.

Abstract: A semiconductor structure includes a substrate with a plurality of word line trenches and source/drain regions each adjacent to each word line trench; a word line located in the word line trench, which includes a first conductive layer located at a bottom of the word line trench, a single junction layer and a second conductive layer stacked in sequence, in which a projection of the word line on a sidewall of the word line trench and the projection of the source/drain region on the sidewall of the word line trench have an overlapping region with a preset height, and when a voltage applied to the word line is less than a preset voltage, a resistance of the single junction layer is greater than the preset resistance, to make the first conductive layer and the second conductive layer disconnected.

Abstract: The present disclosure discloses a preparation method of fatty acid-based VC liposomes, and belongs to the field of pharmaceutical preparations. In the disclosure, a complex of industrial conjugated linoleic acid and other fatty acids with sodium dodecyl sulfate is taken as a capsule material, which is self-assembled to embed vitamin C in an aqueous phase under an acidic condition (pH<7) to form the fatty acid-based vitamin C liposome. The preparation method of the disclosure does not use organic solvents and other substances harmful to the human body, and has the characteristics of safety and health. In addition to VC encapsulation under the acidic condition, the prepared fatty acid-based liposome can play a role in slowly releasing VC.

Abstract: A ferroelectric memory and a data reading method and a data writing method therefor are provided. The ferroelectric memory includes a memory cell array including a plurality of memory cells arranged in an array, a plurality of word lines, and a plurality of bit lines. Each one of the plurality of memory cells stores n-bit data, wherein each one of the plurality of memory cells includes a transistor and 2n-1 ferroelectric capacitors coupled to the transistor, n being a positive integer greater than 1. Each one of the plurality of word lines is coupled to memory cells arranged in rows of the plurality of memory cells in the memory cell array. Each one of the plurality of bit lines is coupled to memory cells arranged in columns of the plurality of memory cells in the memory cell array.

Abstract: The present disclosure provides a semiconductor structure, a method of reading data from the semiconductor structure, and a method of writing data into the semiconductor structure. The semiconductor structure includes: a memory matrix, including a plurality of magnetic storage domains arranged in a staggered manner and including a first end, a second end, and an intermediate portion; and a reading and writing circuit, connected to the intermediate portion of the memory matrix and configured to write data into the magnetic storage domains and read data from the magnetic storage domains.

Abstract: A semiconductor laser comprises: a substrate; a first cladding layer disposed above the substrate; a second cladding layer disposed above the first cladding layer so that the first cladding layer is positioned between the substrate and the second cladding layer; and a first mode expansion layer within the first cladding layer, a second mode expansion layer within the second cladding layer, or both the first mode expansion layer within the first cladding layer and the second mode expansion layer within the second cladding.

Abstract: Embodiments of this application provide a service data processing method. The method includes: receiving service data, performing encapsulation, rate adaptation, and timeslot multiplexing on the service data by code block to obtain an intermediate frame, mapping the intermediate frame to an OTN frame, and sending the OTN frame. A size of the code block is a plurality of bytes, and the code block includes information indicating a code block type. If the code block is an overhead code block or a rate adaptation code block, the code block further includes information indicating a timeslot multiplexing layer at which the code block is located.

Abstract: A steel cord and a manufacturing process are disclosed. The steel cord includes a steel core wire located in the center and having a diameter of d; and M sheath-layer steel wires arranged around the steel core wire in the center, tangent to the steel core wire, and having a diameter of d1, at least two gaps L existing between the M sheath-layer steel wires, where M is 4; d, d1, and L satisfy the following relationship: 0.420<(d/d1)<0.800, d1 is between 0.20 mm and 0.44 mm, and L?0.0008 mm. The steel cord of the present invention may allow rubber to be fully penetrated into the gaps, thereby reducing air content in the steel cord, avoiding point contact friction between the layers of steel wires due to insufficient rubber penetration, and further solving the problem of failure of the bearing capacity of the steel cord due to abrasion.