Abstract: A method comprises generating a PON frame comprising a plurality of FEC codewords, the FEC codewords comprise a first codeword, and the first codeword comprises a PSB; and transmitting the PON frame. A method comprises receiving a PON frame comprising a plurality of FEC codewords, the FEC codewords comprise a first codeword, and the first codeword comprises a PSB; and processing the PON frame.

Abstract: Linker-drug compounds and antibody-drug conjugates that bind to human oncology targets are disclosed. The linker-drug compounds and antibody-drug conjugates comprise a splicing modulator drug moiety. The disclosure further relates to methods and compositions for use in the treatment of neoplastic disorders by administering the antibody-drug conjugates provided herein.

Abstract: Disclosed is a post-plating treatment method for a one-step brass-electroplated steel wire, comprising the following steps: electroplating the surface of the steel wire with a brass alloy; immediately washing the electroplated steel wire with cold water, removing residues from the surface of the steel wire, and blow-drying the steel wire with cold air; immersing the blow-dried steel wire in a water-based coating solution; and taking the immersed steel wire out, blow-drying the steel wire with natural air, and taking the steel wire up. The water-based coating solution comprises a polyoxyethylene organic salt, sodium hypophosphite and the balance of pure water, the polyoxyethylene organic salt comprising a salt of alkyl polyoxyethylene ether phosphate and polyoxyethylene alkylamine.

Abstract: A semiconductor structure includes a substrate with a plurality of word line trenches and source/drain regions each adjacent to each word line trench; a word line located in the word line trench, which includes a first conductive layer located at a bottom of the word line trench, a single junction layer and a second conductive layer stacked in sequence, in which a projection of the word line on a sidewall of the word line trench and the projection of the source/drain region on the sidewall of the word line trench have an overlapping region with a preset height, and when a voltage applied to the word line is less than a preset voltage, a resistance of the single junction layer is greater than the preset resistance, to make the first conductive layer and the second conductive layer disconnected.

Abstract: The present disclosure discloses a preparation method of fatty acid-based VC liposomes, and belongs to the field of pharmaceutical preparations. In the disclosure, a complex of industrial conjugated linoleic acid and other fatty acids with sodium dodecyl sulfate is taken as a capsule material, which is self-assembled to embed vitamin C in an aqueous phase under an acidic condition (pH<7) to form the fatty acid-based vitamin C liposome. The preparation method of the disclosure does not use organic solvents and other substances harmful to the human body, and has the characteristics of safety and health. In addition to VC encapsulation under the acidic condition, the prepared fatty acid-based liposome can play a role in slowly releasing VC.

Abstract: A ferroelectric memory and a data reading method and a data writing method therefor are provided. The ferroelectric memory includes a memory cell array including a plurality of memory cells arranged in an array, a plurality of word lines, and a plurality of bit lines. Each one of the plurality of memory cells stores n-bit data, wherein each one of the plurality of memory cells includes a transistor and 2n-1 ferroelectric capacitors coupled to the transistor, n being a positive integer greater than 1. Each one of the plurality of word lines is coupled to memory cells arranged in rows of the plurality of memory cells in the memory cell array. Each one of the plurality of bit lines is coupled to memory cells arranged in columns of the plurality of memory cells in the memory cell array.

Abstract: The present disclosure provides a semiconductor structure, a method of reading data from the semiconductor structure, and a method of writing data into the semiconductor structure. The semiconductor structure includes: a memory matrix, including a plurality of magnetic storage domains arranged in a staggered manner and including a first end, a second end, and an intermediate portion; and a reading and writing circuit, connected to the intermediate portion of the memory matrix and configured to write data into the magnetic storage domains and read data from the magnetic storage domains.

Abstract: A semiconductor laser comprises: a substrate; a first cladding layer disposed above the substrate; a second cladding layer disposed above the first cladding layer so that the first cladding layer is positioned between the substrate and the second cladding layer; and a first mode expansion layer within the first cladding layer, a second mode expansion layer within the second cladding layer, or both the first mode expansion layer within the first cladding layer and the second mode expansion layer within the second cladding.

Abstract: Embodiments of this application provide a service data processing method. The method includes: receiving service data, performing encapsulation, rate adaptation, and timeslot multiplexing on the service data by code block to obtain an intermediate frame, mapping the intermediate frame to an OTN frame, and sending the OTN frame. A size of the code block is a plurality of bytes, and the code block includes information indicating a code block type. If the code block is an overhead code block or a rate adaptation code block, the code block further includes information indicating a timeslot multiplexing layer at which the code block is located.

Abstract: A steel cord and a manufacturing process are disclosed. The steel cord includes a steel core wire located in the center and having a diameter of d; and M sheath-layer steel wires arranged around the steel core wire in the center, tangent to the steel core wire, and having a diameter of d1, at least two gaps L existing between the M sheath-layer steel wires, where M is 4; d, d1, and L satisfy the following relationship: 0.420<(d/d1)<0.800, d1 is between 0.20 mm and 0.44 mm, and L?0.0008 mm. The steel cord of the present invention may allow rubber to be fully penetrated into the gaps, thereby reducing air content in the steel cord, avoiding point contact friction between the layers of steel wires due to insufficient rubber penetration, and further solving the problem of failure of the bearing capacity of the steel cord due to abrasion.

Abstract: This application relates to a semiconductor structure and a manufacturing method therefor. The semiconductor structure includes multiple semiconductor pillars arranged in rows and spaced apart in a first direction and multiple word lines extending in the second direction and being spaced apart in the first direction. The multiple word lines and the multiple semiconductor pillars are alternately arranged in the first direction, and two word lines located on two opposite sidewalls of the same semiconductor pillar are staggered in an extension direction of the semiconductor pillar, and jointly constitute a control word line corresponding to the semiconductor pillar.

Abstract: Provided in the present disclosure are an image processing method and apparatus, and an electronic device and a storage medium. The method includes: obtaining configuration information matching effect editing in response to performing the effect editing on an initial image, wherein the configuration information includes a deep learning inference node for performing the effect editing on the initial image, and a pre-processing function node and a post-processing function node; calling processing logic of the pre-processing function node according to the configuration information to obtain input data; obtaining output data by means of an algorithm model corresponding to the deep learning inference node; and calling processing logic of the post-processing function node according to the configuration information to obtain a target image added with an effect.

Abstract: The present disclosure relates to a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes a substrate, a plurality of word lines, and a plurality of repeating units. The plurality of word lines are spaced apart in parallel on the substrate, the plurality of word lines extending along a first direction; the plurality of repeating units are respectively located in gaps between adjacent word lines, each of the plurality of repeating units including an active structure and an air gap structure arranged side by side in a second direction. The second direction intersects with the first direction.

Abstract: A method for manufacturing a semiconductor structure includes: forming an initial structure, where the initial structure includes a plurality of main semiconductor pillars, each of the main semiconductor pillars includes a first sub-semiconductor pillar and a second sub-semiconductor pillar, a first sacrificial pattern is provided on the first sub-semiconductor pillar and the second sub-semiconductor pillar; etching the first sacrificial pattern to expose the first sub-semiconductor pillar and the second sub-semiconductor pillar; forming a conductive contact layer; patterning the conductive contact layer to form a plurality of conductive contact structures, where each of the conductive contact structures is in contact with the first sub-semiconductor pillar or the second sub-semiconductor pillar; and filling an isolation material in a gap between the conductive contact structures to form a third isolation layer.

Abstract: The present disclosure provides a display substrate, a manufacturing method of the display substrate and a display apparatus. The display substrate includes a base substrate; an alignment layer, on the base substrate; a first electrode, located between the base substrate and the alignment layer and being in contact with the alignment layer; and a pattern layer, located between the base substrate and the alignment layer and being in contact with the alignment layer. An orthographic projection of the pattern layer on the base substrate does not overlap an orthographic projection of the first electrode on the base substrate, and a ratio of a contact angle of the pattern layer to a contact angle of the first electrode is greater than or equal to 7/12 and less than 3/2.

Abstract: The present disclosure provides a traditional Chinese medicine composition for treating gastroesophageal reflux disease (GERD), including the following raw materials in parts by weight: 10 parts to 25 parts of Fructus trichosanthis, 10 parts to 30 parts of Radix scrophulariae, 10 parts to 20 parts of Os sepiae, 3 parts to 6 parts of Fructus evodiae, 6 parts to 12 parts of Ramulus cinnamomi, 5 parts to 15 parts of Rhizoma coptidis, 10 parts to 20 parts of Radix paeoniae alba, 10 parts to 20 parts of Radix ophiopogonis, 10 parts to 20 parts of red ochre, 10 parts to 20 parts of calcined Ossa draconis, 10 parts to 20 parts of calcined Concha ostreae, 10 parts to 30 parts of Radix rehmanniae, 10 parts to 20 parts of Bulbus fritillariae thunbergii, 10 parts to 20 parts of Radix asparagi, 10 parts to 30 parts of Radix Astragali.

Abstract: Methods, apparatuses, and systems are provided. A method includes obtaining a wavelength division multiplexing optical signal. The wavelength division multiplexing optical signal includes N pairs of optical signals. Each pair of optical signals includes a first optical signal and a second optical signal that are of different wavelengths and whose polarizations are orthogonal to each other. N is an integer greater than 1, and a frequency of at least one of N first optical signals and a frequency of at least one of N second optical signals are within a zero-dispersion frequency ZDF region of an optical fiber. The method further includes sending the wavelength division multiplexing optical signal through the optical fiber.

Abstract: A method comprises generating a PON frame comprising a plurality of FEC codewords, the FEC codewords comprise a first codeword, and the first codeword comprises a PSB; and transmitting the PON frame. A method comprises receiving a PON frame comprising a plurality of FEC codewords, the FEC codewords comprise a first codeword, and the first codeword comprises a PSB; and processing the PON frame.