Patents by Inventor Xiang Yin Zeng

Xiang Yin Zeng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8189361
    Abstract: Disclosed are embodiments of a multi-chip assembly including optically coupled die. The multi-chip assembly may include two opposing substrates, and a number of die are mounted on each of the substrates. At least one die on one of the substrates is in optical communication with at least one opposing die on the other substrate. Other embodiments are described and claimed.
    Type: Grant
    Filed: November 3, 2010
    Date of Patent: May 29, 2012
    Assignee: Intel Corporation
    Inventors: Qing A. Zhou, Daoqiang Lu, Jiangqi He, Wei Shi, Xiang Yin Zeng
  • Patent number: 7989916
    Abstract: An article includes a top electrode that is embedded in a solder mask. An article includes a top electrode that is on a core structure. A process of forming the top electrode includes reducing the solder mask thickness and forming the top electrode on the reduced-thickness solder mask. A process of forming the top electrode includes forming the top electrode over a high-K dielectric that is in a patterned portion of the core structure.
    Type: Grant
    Filed: November 10, 2009
    Date of Patent: August 2, 2011
    Assignee: Intel Corporation
    Inventors: John J. Tang, Xiang Yin Zeng, Jiangqi He, Ding Hai
  • Patent number: 7981726
    Abstract: An embodiment of the present invention is a technique to construct a multi-die package. A stack of dice is formed from a base substrate in a package. The dice are positioned one on top of another and have copper plated segments for die interconnection. The dice are interconnected using copper plating to connect the copper plated segments.
    Type: Grant
    Filed: December 12, 2005
    Date of Patent: July 19, 2011
    Assignee: Intel Corporation
    Inventors: John J. Tang, Henry Xu, Jianmin Li, Xiang Yin Zeng
  • Publication number: 20110058419
    Abstract: Disclosed are embodiments of a multi-chip assembly including optically coupled die. The multi-chip assembly may include two opposing substrates, and a number of die are mounted on each of the substrates. At least one die on one of the substrates is in optical communication with at least one opposing die on the other substrate. Other embodiments are described and claimed.
    Type: Application
    Filed: November 3, 2010
    Publication date: March 10, 2011
    Inventors: Qing A. Zhou, Daoqiang Lu, Jiangqi He, Wei Shi, Xiang Yin Zeng
  • Patent number: 7851809
    Abstract: Disclosed are embodiments of a multi-chip assembly including optically coupled die. The multi-chip assembly may include two opposing substrates, and a number of die are mounted on each of the substrates. At least one die on one of the substrates is in optical communication with at least one opposing die on the other substrate. Other embodiments are described and claimed.
    Type: Grant
    Filed: June 12, 2009
    Date of Patent: December 14, 2010
    Assignee: Intel Corporation
    Inventors: Qing A. Zhou, Daoqiang Lu, Jiangqi He, Wei Shi, Xiang Yin Zeng
  • Patent number: 7852189
    Abstract: A spiral inductor is disposed above a substrate that includes two different materials. A dielectric film is the first material that provides structural integrity for the substrate. A second dielectric is the second material that provides a low dielectric-constant (low-K) material closest to the spiral inductor coil. A process of forming the spiral inductor includes patterning the substrate to allow a recess as a receptacle for the second dielectric, followed by forming the spiral inductor mostly above the second dielectric.
    Type: Grant
    Filed: December 30, 2005
    Date of Patent: December 14, 2010
    Assignee: Intel Corporation
    Inventors: Jiangqi He, Robert L. Sankman, BaoShu Xu, Xiang Yin Zeng
  • Patent number: 7723164
    Abstract: A process includes mating a first heat spreader and a second heat spreader, such that the first heat spreader at a mating surface and second heat spreader at a mating surface become parallel and adjacent. The process includes placing a first die in a first die recess of the first heat spreader, and placing a second die in a second die recess in the second heat spreader. The process includes reflowing thermal interface material between each die and respective heat spreader. Thereafter, the process includes separating the first heat spreader and the second heat spreader. A package is achieved by the process, with reduced thicknesses. The package can be disposed onto a mounting substrate. The package can be assembled into a computing system.
    Type: Grant
    Filed: September 1, 2006
    Date of Patent: May 25, 2010
    Assignee: Intel Corporation
    Inventors: Daoqiang Lu, Jiangqi He, Xiang Yin Zeng, Jiamiao Tang
  • Patent number: 7714430
    Abstract: In one embodiment, the present invention includes a semiconductor package with lossy material inserts. The lossy material inserts may reduce electronic noise such as package resonance. Other embodiments are described and claimed.
    Type: Grant
    Filed: September 28, 2006
    Date of Patent: May 11, 2010
    Assignee: Intel Corporation
    Inventors: Xiang Yin Zeng, Daoqiang (Daniel) Lu, Jiangqi He, Jiamiao(John) Tang
  • Patent number: 7709934
    Abstract: A package may include a substrate provided with noise absorbing material. The noise absorbing material may absorb noise from a signal path in the substrate to prevent the noise from reaching other signals or signal paths.
    Type: Grant
    Filed: December 28, 2006
    Date of Patent: May 4, 2010
    Assignee: Intel Corporation
    Inventors: Xiang Yin Zeng, Jiangqi He, Guizhen Zheng
  • Publication number: 20100059858
    Abstract: An article includes a top electrode that is embedded in a solder mask. An article includes a top electrode that is on a core structure. A process of forming the top electrode includes reducing the solder mask thickness and forming the top electrode on the reduced-thickness solder mask. A process of forming the top electrode includes forming the top electrode over a high-K dielectric that is in a patterned portion of the core structure.
    Type: Application
    Filed: November 10, 2009
    Publication date: March 11, 2010
    Inventors: John J. Tang, Xiang Yin Zeng, Jiangqi He, Ding Hai
  • Patent number: 7670919
    Abstract: An article includes a top electrode that is embedded in a solder mask. An article includes a top electrode that is on a core structure. A process of forming the top electrode includes reducing the solder mask thickness and forming the top electrode on the reduced-thickness solder mask. A process of forming the top electrode includes forming the top electrode over a high-K dielectric that is in a patterned portion of the core structure.
    Type: Grant
    Filed: December 30, 2005
    Date of Patent: March 2, 2010
    Assignee: Intel Corporation
    Inventors: John J. Tang, Xiang Yin Zeng, Jiangqi He, Ding Hai
  • Patent number: 7659143
    Abstract: A method includes mating a first heat spreader and a second heat spreader, such that the first heat spreader at a mating surface and second heat spreader at a mating surface become parallel and adjacent. The mated first heat spreader and second heat spreader have at least one convection channel disposed therebetween. A process includes placing a first die in a first die recess of the first heat spreader, and placing a second die on a second die site on the second heat spreader. The process includes reflowing thermal interface material between each die and respective heat spreader. A package is achieved by the method, with reduced thicknesses. The package can be coupled through a bumpless build-up layer. The package can be assembled into a computing system.
    Type: Grant
    Filed: September 29, 2006
    Date of Patent: February 9, 2010
    Assignee: Intel Corporation
    Inventors: Jiamiao Tang, Daoqiang Lu, Jiangqi He, Xiang Yin Zeng
  • Publication number: 20090250707
    Abstract: Disclosed are embodiments of a multi-chip assembly including optically coupled die. The multi-chip assembly may include two opposing substrates, and a number of die are mounted on each of the substrates. At least one die on one of the substrates is in optical communication with at least one opposing die on the other substrate. Other embodiments are described and claimed.
    Type: Application
    Filed: June 12, 2009
    Publication date: October 8, 2009
    Inventors: Qing A. Zhou, Daoqiang Lu, Jianggi He, Wei Shi, Xiang Yin Zeng
  • Patent number: 7564066
    Abstract: Disclosed are embodiments of a multi-chip assembly including optically coupled die. The multi-chip assembly may include two opposing substrates, and a number of die are mounted on each of the substrates. At least one die on one of the substrates is in optical communication with at least one opposing die on the other substrate. Other embodiments are described and claimed.
    Type: Grant
    Filed: November 9, 2005
    Date of Patent: July 21, 2009
    Assignee: Intel Corporation
    Inventors: Qing A. Zhou, Daoqiang Lu, Jiangqi He, Wei Shi, Xiang Yin Zeng
  • Patent number: 7535689
    Abstract: An integrated circuit with reduced pad capacitance, having a trench formed in the silicon substrate below the pad to reduce the pad capacitance. In another embodiment, an encapsulated air cavity is formed underneath the pad.
    Type: Grant
    Filed: June 21, 2007
    Date of Patent: May 19, 2009
    Assignee: Intel Corporation
    Inventors: Xiang Yin Zeng, Ming Dong Cui, Gregory V. Christensen, Mostafa Naguib Abdulla, Daoqiang Lu, Jiangqi He, Jiamiao Tang
  • Patent number: 7535080
    Abstract: A method to reduce parasitic mutual capacitances in embedded passives. A first capacitor is formed by first and second electrodes embedding a dielectric layer. A second capacitor is formed by third and fourth electrodes embedding the dielectric layer. The third and first electrodes are etched from a first metal layer. The fourth and second electrodes are etched from a second metal layer. The first and the fourth electrodes are connected by a connection through the dielectric layer to shield a mutual capacitance between the first and second capacitors.
    Type: Grant
    Filed: June 30, 2005
    Date of Patent: May 19, 2009
    Assignee: Intel Corporation
    Inventors: Xiang Yin Zeng, Jiangqi He, BaoShu Xu
  • Patent number: 7511359
    Abstract: Embodiments of the invention relate to the construction of a dual die package with a high-speed interconnect. A package is created having a first die on a first side of a base substrate and a second die on a second side of the base substrate in opposed relation to the first die. A first copper plated interconnect is plated to the base substrate. Second copper interconnects are formed to connect the first copper plated interconnect to the first and second dice, respectively, such that the first and second dice are interconnected.
    Type: Grant
    Filed: December 29, 2005
    Date of Patent: March 31, 2009
    Assignee: Intel Corporation
    Inventors: John J. Tang, Xiang Yin Zeng, Jiangqi He
  • Publication number: 20090039482
    Abstract: A method, apparatus and system with a package including an integrated circuit disposed between die including a microprocessor and a die including a fourth level cache.
    Type: Application
    Filed: August 31, 2005
    Publication date: February 12, 2009
    Inventors: Jiangqi He, Bao Shu Xu, Xiang Yin Zeng
  • Patent number: 7477197
    Abstract: Electronic devices and methods for their formation are described. One device relates to an electronic assembly including a substrate having a first surface and a second surface opposite the first surface. The electronic assembly also includes at least one RF front-end module coupled to the first surface of the substrate, and a ground plane layer positioned on the second surface of the substrate. The electronic assembly also includes an insulating layer on the ground plane layer, with the ground plane layer positioned between the second surface and the insulating layer. In addition, the electronic assembly also includes an antenna layer on the insulating layer, with the insulating layer positioned between the antenna layer and the ground plane layer.
    Type: Grant
    Filed: December 29, 2006
    Date of Patent: January 13, 2009
    Assignee: Intel Corporation
    Inventors: Xiang Yin Zeng, Jiangqi He, Guizhen Zheng
  • Publication number: 20080316662
    Abstract: An integrated circuit with reduced pad capacitance, having a trench formed in the silicon substrate below the pad to reduce the pad capacitance. In another embodiment, an encapsulated air cavity if formed underneath the pad. Other embodiments are described and claimed.
    Type: Application
    Filed: June 21, 2007
    Publication date: December 25, 2008
    Inventors: Xiang Yin Zeng, Ming Dong Cui, Gregory V. Christensen, Mostafa Naguib Abdulla, Daoqiang Lu, Jiangqi He, Jiamiao Tang