Abstract: A vehicle-mounted lidar external parameter joint calibration method and system, a medium and a device. Said calibration method comprises: respectively acquiring point cloud data of the reference radar and point cloud data of a radar to be calibrated, obtain a corresponding plane A point cloud and a corresponding plane B point cloud, and calibrating a rotation matrix; rotating the plane A point cloud corresponding to said radar by means of the rotation matrix, and obtaining a z component of a translation matrix on the basis of the rotated plane A point cloud and the plane A point cloud corresponding to the reference radar; and obtaining a calibration column point cloud from the point cloud data of the reference radar, and obtaining x and y components of the translation matrix on the basis of the calibration column point cloud and the rotated plane A point cloud corresponding to said radar.

Abstract: An umnanned vehicle with a separable functional module includes a functional module, a chassis for supporting the functional module, and a vehicle head mounted on the chassis, a locking mechanism connected to the functional module is disposed on the chassis or the vehicle head, and the functional module is combined with or separated from the chassis or the vehicle head through locking or unlocking of the locking mechanism.

Abstract: The present disclosure provides a semiconductor epitaxial structure, including a substrate, a first-type semiconductor layer, an active region comprising at least one quantum layer, and a second-type semiconductor layer sequentially stacked on a surface of the substrate; wherein the quantum layer comprises barrier layers and potential well layers, and the barrier layers are alternately stacked with the potential well layers, and wherein the quantum layer further comprises a growth temperature transition layer between a barrier layer and a potential well layer, or an electron confinement layer between a barrier layer and a potential well layer.

Abstract: The present disclosure provides a semiconductor epitaxial structure and a manufacturing method therefor, and an LED chip. The semiconductor epitaxial structure may include a substrate, an N-type semiconductor layer, a gate elimination layer, an active layer and a P-type semiconductor layer are sequentially stacked on a surface of a substrate. Furthermore, the gate elimination layer comprises an N-type doped semiconductor layer.

Abstract: A unitized space management method for separating transportation rights and usage rights, comprising: each unitized space is a standard goods container, and an electronic tag is for marking the usage rights of each unitized space container; a logistics vehicle is the transport carrier to implement the logistical transport process of the unitized space; during the process, the unitized space is located on transport vehicle and is in a locked state under an owner control; after the logistics vehicle transports the unitized space to a destination, the unitized space may or may not be separated from the logistics vehicle. Under the owner control, comparison verification of the electronic tag is used to implement usage and exercise the usage rights of the unitized space, for example picking up or placing items stored in the unitized space. The method has advantages of higher efficiency, a wider range of application, and better security.

Abstract: A monitor assembly for a radiotherapy device (220) is provided, the radiotherapy device (220) being configured to provide therapeutic radiation to a patient (208) via a source (200) of therapeutic radiation, and wherein the radiotherapy device (220) comprises a first rotatable member. The monitor assembly comprises a monitor (302) configured for outputting visual data to a user, a counterweight (406), and a connector assembly configured to connect the monitor (302) to the first rotatable member. A first part of the connector assembly is configured for rotation, with the first rotatable member, and a second part of the connector assembly is configured for non-rotation, with the monitor (302).

Abstract: Provided is a method for manufacturing a semiconductor wafer and a semiconductor wafer. The method includes: disposing a sacrificial layer on a first surface and a second surface of a patterned substrate, the patterned substrate comprising the first surface and the second surface having different normal directions; exposing the first surface by removing the first portion of the sacrificial layer disposed on the first surface; growing an original nitride buffer layer on the first surface and the second portion of the sacrificial layer; partially lifting off the second portion of the sacrificial layer disposed on the second surface such that at least one sub-portion of the second portion of the sacrificial layer remains on the second surface of the patterned substrate; and growing an epitaxial layer on the original nitride buffer layer, where a crystal surface of the epitaxial layer grows along a normal direction of the patterned substrate.

Abstract: A semiconductor chip of a light emitting diode includes a substrate, and an N-type gallium nitride layer, a quantum well layer, and a P-type gallium nitride layer stacked on the substrate successively, an N-type electrode electrically connected to the N-type gallium nitride layer, and a P-type electrode electrically connected to the P-type gallium nitride layer. The quantum well layer includes at least one quantum barrier and at least one quantum well stacked successively in sequence, wherein the growth pressure of the quantum barrier and the growth pressure of the quantum well are different, such that the interface crystal quality between the quantum well and the quantum barrier of the quantum well layer can be greatly improved to enhance the luminous efficiency of the semiconductor chip.

Abstract: A grid cabinet with variable spaces includes a cabinet body and a control part. The cabinet body is provided with two or more accommodating cavities, each of which is provided with at least one door and a door locking part. A separator is disposed between every adjacent accommodating cavities, the adjacent accommodating cavities are separated into respective independent spaces by the separators, and a separator locking part for fixing and locking the separator is provided in each accommodating cavity. Under control of the control part, the door locking parts of two or more adjacent accommodating cavities are opened synchronously, the separator locking parts are loosened, and the separators are operated so that the two or more adjacent accommodating cavities are communicated.

Abstract: A semiconductor wafer includes a substrate (1), a buffer layer (2) deposited on the substrate (1), and an epitaxial layer (4) above the buffer layer (2). The buffer layer (2) includes a plurality of semiconductor material layers (22) and a plurality of oxygen-doped material layers (21). The semiconductor material layers (22) and the oxygen-doped material layers (21) are deposited in an alternating arrangement on top of each other. Oxygen concentrations of the oxygen-doped material layers (21) gradually decrease along a direction from the substrate (1) to the epitaxial layer (4).

Abstract: Disclosed is a wafer or a material stack for semiconductor-based optoelectronic or electronic devices that minimizes or reduces misfit dislocation, as well as a method of manufacturing such wafer of material stack. A material stack according to the disclosed technology includes a substrate; a basis buffer layer of a first material disposed above the substrate; and a plurality of composite buffer layers disposed above the basis buffer layer sequentially along a growth direction. The growth direction is from the substrate to a last composite buffer layer of the plurality of composite buffer layers. Each composite buffer layer except the last composite buffer layer includes a first buffer sublayer of the first material, and a second buffer sublayer of a second material disposed above the first buffer sublayer. The thicknesses of the first buffer sublayers of the composite buffer layers decrease along the growth direction.

Abstract: A grid cabinet with variable spaces includes a cabinet body and a control part. The cabinet body is provided with two or more accommodating cavities, each of which is provided with at least one door and a door locking part. A separator is disposed between every adjacent accommodating cavities, the adjacent accommodating cavities are separated into respective independent spaces by the separators, and a separator locking part for fixing and locking the separator is provided in each accommodating cavity. Under control of the control part, the door locking parts of two or more adjacent accommodating cavities are opened synchronously, the separator locking parts are loosened, and the separators are operated so that the two or more adjacent accommodating cavities are communicated.

Abstract: Provided is a method for manufacturing a semiconductor wafer and a semiconductor wafer. The method includes: disposing a sacrificial layer on a first surface and a second surface of a patterned substrate, the patterned substrate comprising the first surface and the second surface having different normal directions; exposing the first surface by removing the first portion of the sacrificial layer disposed on the first surface; growing an original nitride buffer layer on the first surface and the second portion of the sacrificial layer; partially lifting off the second portion of the sacrificial layer disposed on the second surface such that at least one sub-portion of the second portion of the sacrificial layer remains on the second surface of the patterned substrate; and growing an epitaxial layer on the original nitride buffer layer, where a crystal surface of the epitaxial layer grows along a normal direction of the patterned substrate.

Abstract: According to at least some embodiments of the present disclosure, a method of manufacturing semiconductor wafers comprises: selectively growing a nitride buffer layer on a first surface of a patterned substrate, the patterned substrate including at least the first surface and a second surface; and growing an epitaxial layer on the nitride buffer layer, wherein a crystal surface of the epitaxial layer grows along a normal direction of the patterned substrate. The epitaxial layer does not include multiple crystal surfaces having different crystal growth directions that cause a stress at a junction interface where the crystal surfaces having the different crystal growth directions meet.

Abstract: A micro-LED macro transfer method, a micro-LED display device, and a method for fabricating the same are provided. In the micro-LED macro transfer method, the LED chips on an array are divided into a first plurality of LED chips and a second plurality of LED chips. An LED chip includes a first surface and a second surface. The first plurality of LED chips are configured so that their first surfaces are coupled to the first transfer substrate. The second plurality of LED chips are configured so that their second surfaces are coupled to the second transfer substrate. Accordingly, the first transfer substrate transfers the first plurality of LED chips to the first transfer substrate while the second transfer substrate transfers the second plurality of LED chips to the second transfer substrate.

Abstract: A semiconductor chip of a light emitting diode includes a substrate, and an N-type gallium nitride layer, a quantum well layer, and a P-type gallium nitride layer stacked on the substrate successively, an N-type electrode electrically connected to the N-type gallium nitride layer, and a P-type electrode electrically connected to the P-type gallium nitride layer. The quantum well layer includes at least one quantum barrier and at least one quantum well stacked successively in sequence, wherein the growth pressure of the quantum barrier and the growth pressure of the quantum well are different, such that the interface crystal quality between the quantum well and the quantum barrier of the quantum well layer can be greatly improved to enhance the luminous efficiency of the semiconductor chip.

Abstract: A micro-LED macro transfer method, a micro-LED display device, and a method for fabricating the same are provided. In the micro-LED macro transfer method, the LED chips on an array are divided into a first plurality of LED chips and a second plurality of LED chips. An LED chip includes a first surface and a second surface. The first plurality of LED chips are configured so that their first surfaces are coupled to the first transfer substrate. The second plurality of LED chips are configured so that their second surfaces are coupled to the second transfer substrate. Accordingly, the first transfer substrate transfers the first plurality of LED chips to the first transfer substrate while the second transfer substrate transfers the second plurality of LED chips to the second transfer substrate.

Abstract: A light-emitting diode (LED) device and a method of producing the same are provided. The LED device comprises a first conductive layer, a second conductive layer, an active layer sandwiched between the first conductive layer and the second conductive layer and a first electrode in electrical contact with the first conductive layer. The first conductive layer has a laminate structure comprising a first conductive sub-layer, a current blocking layer, and a second conductive sub-layer. The first electrode comprises a first extended electrode in electrical contact with the first conductive sub-layer, and a second extended electrode in electrical contact with the second conductive sub-layer. The first conductive sub-layer and the second conductive sub-layer may have different depths.

Abstract: A semiconductor wafer includes a substrate (1), a buffer layer (2) deposited on the substrate (1), and an epitaxial layer (4) above the buffer layer (2). The buffer layer (2) includes a plurality of semiconductor material layers (22) and a plurality of oxygen-doped material layers (21). The semiconductor material layers (22) and the oxygen-doped material layers (21) are deposited in an alternating arrangement on top of each other. Oxygen concentrations of the oxygen-doped material layers (21) gradually decrease along a direction from the substrate (1) to the epitaxial layer (4).

Abstract: A light-emitting diode (LED) device and a method of producing the same are provided. The LED device comprises a first conductive layer, a second conductive layer, an active layer sandwiched between the first conductive layer and the second conductive layer and a first electrode in electrical contact with the first conductive layer. The first conductive layer has a laminate structure comprising a first conductive sub-layer, a current blocking layer, and a second conductive sub-layer. The first electrode comprises a first extended electrode in electrical contact with the first conductive sub-layer, and a second extended electrode in electrical contact with the second conductive sub-layer. The first conductive sub-layer and the second conductive sub-layer may have different depths.