Abstract: A method for mounting a dielectric substrate to a semiconductor substrate, such as mounting a dielectric antenna substrate to an MMIC semiconductor substrate. The method includes providing a thin dielectric antenna substrate having metallized layers on opposing sides. In one embodiment, carrier wafers are used to handle and maintain the dielectric substrate in a flat configuration as the metallized layers are patterned. The dielectric substrate is sealed to the semiconductor substrate using a low temperature bonding process. In an alternate embodiment, the metallized layers on the dielectric substrate are patterned simultaneously so as to prevent the substrate from curling.

Abstract: A wafer-level package that employs one or more integrated hydrogen getters within the wafer-level package on a substrate wafer or a cover wafer. The hydrogen getters are provided between and among the integrated circuits on the substrate wafer or the cover wafer, and are deposited during the integrated circuit fabrication process. In one non-limiting embodiment, the substrate wafer is a group III-V semiconductor material, and the hydrogen getter includes a titanium layer, a nickel layer, and a palladium layer.