Abstract: A micro-LED display device and a manufacturing method thereof are disclosed. The method comprises: forming micro-LEDs (202) on a carrier substrate (201), wherein the carrier substrate (201) is transparent for a laser which is used in laser lifting-off; filling trenches between the micro-LEDs (202) on the carrier substrate (201) with a holding material (209); performing a laser lifting-off on selected ones of the micro-LEDs (202) to lift off them from the carrier substrate (201), wherein the selected micro-LEDs (202) are held on the carrier substrate (201) through the holding material (209); bonding the selected micro-LEDs (202) onto a receiving substrate (207) of the micro-LED display device; separating the selected micro-LEDs (202) from the carrier substrate (201) to transfer them to the receiving substrate (207).

Abstract: A micro-LED device, a display apparatus and a method for manufacturing a micro-LED device are provided. The micro-LED device comprises: a growth substrate; a plurality of vertical micro-LEDs formed on the growth substrate; a first type electrode formed on top of each of the vertical micro-LEDs; and a second type electrode formed on side surface of each of the vertical micro-LEDs.

Abstract: The present disclosure discloses a micro-LED transfer method, a manufacturing method, device and an electronic apparatus. The transfer method comprises: in accordance with a sequence of micro-LEDs of blue, green and red, epitaxially growing micro-LEDs of two or all of the three colors on a single GaAs original substrate; epitaxially growing bumping electrodes corresponding to the micro-LEDs on a receiving substrate; bonding the micro-LEDs of the two or all of the three colors with the bumping electrodes on the receiving substrate; and removing the GaAs original substrate. The method can be used to transfer micro-LEDs of a variety of colors, in order to improve the production efficiency.

Abstract: A projection module and an electronics apparatus are provided. The projection module comprises: a projection chip, having micro semiconductor light emitting devices thereon; and a projection lens unit, wherein the micro semiconductor light emitting devices produce projection light to create a projection image, and the projection lens unit receives the projection image and projects it to a projection surface.

Abstract: The present invention discloses a micro-LED with vertical structure, display device, electronics apparatus and manufacturing method. The micro-LED with vertical structure comprises: a bottom electrode bonded on a display substrate; a first type doped region provided above the bottom electrode; a second type doped region provided above the first type doped region; and a side-contact electrode covering at least one part of a peripheral of the second type doped region.

Abstract: A micro-LED transfer method, manufacturing method and display device are provided. The micro-LED transfer method comprises: bonding the micro-LED array on a first substrate onto a receiving substrate through micro-bumps, wherein the first substrate is laser transparent; applying underfill into a gap between the first substrate and the receiving substrate; irradiating laser onto the micro-LED array from a side of the first substrate to lift-off the micro-LED array from the first substrate; and removing the underfill.

Abstract: A micro-LED transfer method, manufacturing method and display device are provided. The micro-LED transfer method comprises: bonding the micro-LED array on a first substrate onto a receiving substrate through micro-bumps, wherein the first substrate is laser transparent; applying underfill into a gap between the first substrate and the receiving substrate; irradiating laser onto the micro-LED array from a side of the first substrate to lift-off the micro-LED array from the first substrate; and removing the underfill.

Abstract: A projection module and an electronics apparatus are provided. The projection module comprises: a projection chip, having micro semiconductor light emitting devices thereon; and a projection lens unit, wherein the micro semiconductor light emitting devices produce projection light to create a projection image, and the projection lens unit receives the projection image and projects it to a projection surface.

Abstract: It is disclosed a micro-LED transfer method, manufacturing method and display device. The method for transferring a micro-LED array comprises: patterning conductive resist on a receiving substrate to cover electrodes for the micro-LED array to be transferred; bonding the micro-LED array on a first substrate with the receiving substrate through the conductive resist, wherein the first substrate is laser transparent; irradiating laser onto the micro-LED array from a side of the first substrate to lift-off the micro-LED array from the first substrate. According to an embodiment, the performance of a micro-LED device may be improved.

Abstract: A display device and an electronics apparatus, the display device comprises: a display substrate; and at least two stacked layers on the display substrate, wherein each stacked layer includes one micro-LED array.

Abstract: A micro-LED transfer method, manufacturing method and device are provided. The micro-LED transfer method comprises: obtaining a laser-transparent carrier substrate having a first surface and a second surface with micro-LEDs; forming a protection layer on at least one of the first surface and the second surface and a third surface of a receiving substrate, wherein the third surface is to receive the micro-LEDs to be transferred via pads; bringing the micro-LEDs to be transferred into contact with the pads on the third surface; and irradiating the micro-LEDs to be transferred with laser from the first surface to lift-off the micro-LEDs to be transferred from the carrier substrate wherein the protection layer configured to protect the third surface from the irradiation of the laser.

Abstract: The present disclosure discloses a micro-LED transfer method, a manufacturing method, device and an electronic apparatus. The transfer method comprises: in accordance with a sequence of micro-LEDs of blue, green and red, epitaxially growing micro-LEDs of two or all of the three colors on a single GaAs original substrate; epitaxially growing bumping electrodes corresponding to the micro-LEDs on a receiving substrate; bonding the micro-LEDs of the two or all of the three colors with the bumping electrodes on the receiving substrate; and removing the GaAs original substrate. The method can be used to transfer micro-LEDs of a variety of colors, in order to improve the production efficiency.

Abstract: A display device and an electronics apparatus are provided. The display device comprises: a display substrate; and arrays of light-emitting elements on the display substrate, wherein the light-emitting elements include at least two types of electroluminescent quantum-dot LED, photoluminescent quantum-dot LED and micro-LED, wherein at least one type of the light-emitting elements is an electroluminescent quantum-dot LED, or at least two types of the light-emitting elements are micro-LED.

Abstract: A micro-LED display device and a manufacturing method thereof are disclosed. The method comprises: forming micro-LEDs (202) on a carrier substrate (201), wherein the carrier substrate (201) is transparent for a laser which is used in laser lifting-off; filling trenches between the micro-LEDs (202) on the carrier substrate (201) with a holding material (209); performing a laser lifting-off on selected ones of the micro-LEDs (202) to lift off them from the carrier substrate (201), wherein the selected micro-LEDs (202) are held on the carrier substrate (201) through the holding material (209); bonding the selected micro-LEDs (202) onto a receiving substrate (207) of the micro-LED display device; separating the selected micro-LEDs (202) from the carrier substrate (201) to transfer them to the receiving substrate (207).

Abstract: A light-emitting diode includes from bottom to up: a substrate, a first-conductive type semiconductor layer, a super lattice, a multi-quantum well layer and a second-conductive type semiconductor layer. At least one layer of granular medium layer is inserted in the super lattice. The granular medium layer is used for forming V pits with different widths and depths in the super lattice. The multi-quantum well layer fills up the V pits and is over the top surface of the super lattice. The number of micro-particle generations, positions and densities can be adjusted by introducing granular medium layers and controlling the number of layers, position and growth conditions during super lattice growth process, to ensure V pits of different depths and densities. This can change hole injection effect, effectively improve hole injection efficiency and distribution uniformity in all quantum wells, thus improving LED light-emitting efficiency.

Abstract: A micro-LED device, a display apparatus and a method for manufacturing a micro-LED device are provided. The micro-LED device comprises: a growth substrate; a plurality of vertical micro-LEDs formed on the growth substrate; a first type electrode formed on top of each of the vertical micro-LEDs; and a second type electrode formed on side surface of each of the vertical micro-LEDs.

Abstract: The present invention discloses a micro-LED with vertical structure, display device, electronics apparatus and manufacturing method. The micro-LED with vertical structure comprises: a bottom electrode bonded on a display substrate; a first type doped region provided above the bottom electrode; a second type doped region provided above the first type doped region; and a side-contact electrode covering at least one part of a peripheral of the second type doped region.

Abstract: A micro-LED transfer method, manufacturing method and device are provided. The micro-LED transfer method comprises: obtaining a laser-transparent carrier substrate having a first surface and a second surface with micro-LEDs; forming a protection layer on at least one of the first surface and the second surface and a third surface of a receiving substrate, wherein the third surface is to receive the micro-LEDs to be transferred via pads; bringing the micro-LEDs to be transferred into contact with the pads on the third surface; and irradiating the micro-LEDs to be transferred with laser from the first surface to lift-off the micro-LEDs to be transferred from the carrier substrate, wherein the protection layer is configured to protect the third surface from the irradiation of the laser.

Abstract: A display device and an electronics apparatus are provided. The display device comprises: a display substrate; and arrays of light-emitting elements on the display substrate, wherein the light-emitting elements include at least two types of electroluminescent quantum-dot LED, photoluminescent quantum-dot LED and micro-LED, wherein at least one type of the light-emitting elements is an electroluminescent quantum-dot LED, or at least two types of the light-emitting elements are micro-LED.

Abstract: A display device and an electronics apparatus, the display device comprises: a display substrate; and at least two stacked layers on the display substrate, wherein each stacked layer includes one micro-LED array.