Patents by Inventor Xiangxu FENG

Xiangxu FENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180138358
    Abstract: A light-emitting diode includes from bottom to up: a substrate, a first-conductive type semiconductor layer, a super lattice, a multi-quantum well layer and a second-conductive type semiconductor layer. At least one layer of granular medium layer is inserted in the super lattice. The granular medium layer is used for forming V pits with different widths and depths in the super lattice. The multi-quantum well layer fills up the V pits and is over the top surface of the super lattice. The number of micro-particle generations, positions and densities can be adjusted by introducing granular medium layers and controlling the number of layers, position and growth conditions during super lattice growth process, to ensure V pits of different depths and densities. This can change hole injection effect, effectively improve hole injection efficiency and distribution uniformity in all quantum wells, thus improving LED light-emitting efficiency.
    Type: Application
    Filed: December 20, 2017
    Publication date: May 17, 2018
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Jie ZHANG, Xiangxu FENG, Chengxiao DU, Jianming LIU, Chen-ke HSU