Patents by Inventor Xianmin Tang

Xianmin Tang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11011676
    Abstract: Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.
    Type: Grant
    Filed: June 15, 2016
    Date of Patent: May 18, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Mingwei Zhu, Rongjun Wang, Nag B. Patibandla, Xianmin Tang, Vivek Agrawal, Cheng-Hsiung Tsai, Muhammad Rasheed, Dinesh Saigal, Praburam Gopal Raja, Omkaram Nalamasu, Anantha Subramani
  • Publication number: 20210123156
    Abstract: Embodiments described herein include a method for depositing a material layer on a substrate while controlling a bow of the substrate and a surface roughness of the material layer. A bias applied to the substrate while the material layer is deposited is adjusted to control the bow of the substrate. A bombardment process is performed on the material layer to improve the surface roughness of the material layer. The bias and bombardment process improve a uniformity of the material layer and reduce an occurrence of the material layer cracking due to the bow of the substrate.
    Type: Application
    Filed: September 10, 2020
    Publication date: April 29, 2021
    Inventors: Zihao YANG, Mingwei ZHU, Nag B. PATIBANDLA, Yong CAO, Shumao ZHANG, Zhebo CHEN, Jean LU, Daniel Lee DIEHL, Xianmin TANG
  • Publication number: 20210118729
    Abstract: Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.
    Type: Application
    Filed: September 29, 2020
    Publication date: April 22, 2021
    Inventors: Shirish PETHE, Fuhong ZHANG, Joung Joo LEE, Rui LI, Xiangjin XIE, Xianmin TANG
  • Patent number: 10950448
    Abstract: Methods and apparatus for control of the quality of films deposited via physical vapor deposition are provided herein. In some embodiments, a method of depositing a film using linear scan physical vapor deposition includes: determining a deposition rate of a material to be deposited on a substrate in a linear scan physical vapor deposition process; calculating a scan rate of the substrate to achieve deposition of the material to a desired thickness in a single pass when deposited at the deposition rate; and performing the linear scan physical vapor deposition process while moving the substrate at the calculated scan rate.
    Type: Grant
    Filed: April 5, 2019
    Date of Patent: March 16, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bencherki Mebarki, Joung Joo Lee, Xianmin Tang
  • Publication number: 20210071294
    Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a physical vapor deposition chamber includes: a body having an interior volume and a lid assembly including a target to be sputtered; a magnetron disposed above the target, wherein the magnetron is configured to rotate a plurality of magnets about a central axis of the physical vapor deposition chamber; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support a substrate; a collimator disposed between the target and the substrate support, the collimator having a central region having a first thickness and a peripheral region having a second thickness less than the first thickness; a first power source coupled to the target to electrically bias the target; and a second power source coupled to the substrate support to electrically bias the substrate support.
    Type: Application
    Filed: November 23, 2020
    Publication date: March 11, 2021
    Inventors: Xiaodong WANG, Joung Joo LEE, Fuhong ZHANG, Martin Lee RIKER, Keith A. MILLER, William FRUCHTERMAN, Rongjun WANG, Adolph Miller ALLEN, Shouyin ZHANG, Xianmin TANG
  • Patent number: 10927451
    Abstract: Methods and apparatus for processing a substrate. The method, for example, includes directing a stream of material from a PVD source at a first non-perpendicular angle to selectively deposit the material on a top portion of one or more features on the substrate and form a first overhang and a second overhang extending beyond a third sidewall and a fourth sidewall that are arranged parallel and opposite to each other and at non-zero angles to a first sidewall and a second sidewall, the first sidewall and the second sidewall defining a length of the one or more features, and the third sidewall and fourth sidewall defining a width of the one or more features; performing an etch process to selectively remove some of the first sidewall and the second sidewall while keeping the third sidewall and fourth sidewall in intact and maintaining the width of the one or more features.
    Type: Grant
    Filed: August 15, 2019
    Date of Patent: February 23, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bencherki Mebarki, Byeong Chan Lee, Huixiong Dai, Tejinder Singh, Joung Joo Lee, Xianmin Tang
  • Patent number: 10927450
    Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: directing a stream of material from a PVD source toward a surface of a substrate at a first non-perpendicular angle to the plane of the surface to deposit the material on one or more features on the substrate and form a first overhang; etching the layer of the substrate beneath the features selective to the deposited material to form a first part of a pattern; removing the material from the features; directing the stream of material from the PVD source toward the surface of the substrate at a second non-perpendicular angle to the plane of the surface to deposit the material on the features on the substrate and form a second overhang; and etching the layer of the substrate beneath the features selective to the deposited material to form a second part of the pattern.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: February 23, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bencherki Mebarki, Wenhui Wang, Huixiong Dai, Christopher Ngai, Joung Joo Lee, Xianmin Tang
  • Publication number: 20200357616
    Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate.
    Type: Application
    Filed: July 24, 2020
    Publication date: November 12, 2020
    Inventors: Adolph Miller ALLEN, Lara HAWRYLCHAK, Zhigang XIE, Muhammad M. RASHEED, Rongjun WANG, Xianmin TANG, Zhendong LIU, Tza-Jing GUNG, Srinivas GANDIKOTA, Mei CHANG, Michael S. COX, Donny YOUNG, Kirankumar SAVANDAIAH, Zhenbin GE
  • Publication number: 20200350159
    Abstract: Methods and apparatus for method for filling a feature with copper. In some embodiments, the methods include: (a) depositing a first cobalt layer via a physical vapor deposition (PVD) process atop a substrate field and atop a sidewall and a bottom surface of a feature disposed in a substrate to form a first cobalt portion atop the substrate field and a second cobalt portion atop the sidewall; (b) depositing copper atop the first cobalt portion atop the substrate field; and (c) flowing the copper disposed atop the first cobalt portion atop the substrate field over the second cobalt portion and into the feature, wherein the first cobalt portion atop the substrate field reduces the mobility of copper compared to the mobility of copper over the second cobalt portion.
    Type: Application
    Filed: January 25, 2020
    Publication date: November 5, 2020
    Inventors: Rui LI, Xiangjin XIE, Fuhong Zhang, Shirish PETHE, Adolph ALLEN, Lanlan Zhong, Xianmin TANG
  • Patent number: 10815561
    Abstract: Methods and apparatus for asymmetric selective physical vapor deposition (PVD) are provided herein. In some embodiments, a method for physical vapor deposition (PVD) includes providing a stream of a first material from a first PVD source towards a surface of a substrate at a first non-perpendicular angle to the plane of the substrate surface, directing the stream of the first material through a first collimator having at least one opening to limit an angular range of first material passing through the at least one opening; depositing the first material only on a top portion and a first sidewall of at least one feature formed on the substrate surface, and linearly scan the substrate through the stream of first material via the substrate support to deposit the first material only on a top portion and a first sidewall of all features formed on the substrate.
    Type: Grant
    Filed: March 7, 2019
    Date of Patent: October 27, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Joung Joo Lee, Bencherki Mebarki, Xianmin Tang, Keith Miller, Sree Rangasai Kesapragada, Sudarsan Srinivasan
  • Patent number: 10763090
    Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate.
    Type: Grant
    Filed: August 15, 2016
    Date of Patent: September 1, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Adolph Miller Allen, Lara Hawrylchak, Zhigang Xie, Muhammad M. Rasheed, Rongjun Wang, Xianmin Tang, Zhendong Liu, Tza-Jing Gung, Srinivas Gandikota, Mei Chang, Michael S. Cox, Donny Young, Kirankumar Savandaiah, Zhenbin Ge
  • Publication number: 20200255937
    Abstract: Methods and apparatus for processing a substrate. The method, for example, includes directing a stream of material from a PVD source at a first non-perpendicular angle to selectively deposit the material on a top portion of one or more features on the substrate and form a first overhang and a second overhang extending beyond a third sidewall and a fourth sidewall that are arranged parallel and opposite to each other and at non-zero angles to a first sidewall and a second sidewall, the first sidewall and the second sidewall defining a length of the one or more features, and the third sidewall and fourth sidewall defining a width of the one or more features; performing an etch process to selectively remove some of the first sidewall and the second sidewall while keeping the third sidewall and fourth sidewall in intact and maintaining the width of the one or more features.
    Type: Application
    Filed: August 15, 2019
    Publication date: August 13, 2020
    Inventors: BENCHERKI MEBARKI, BYEONG CHAN LEE, HUIXIONG DAI, TEJINDER SINGH, JOUNG JOO LEE, XIANMIN TANG
  • Patent number: 10734235
    Abstract: Systems and methods for sputtering a layer of refractory metal layer onto a barrier layer disposed on a substrate are disclosed herein. In one or more embodiments, a method of sputter depositing a tungsten structure in an integrated circuit includes: moving a substrate into a plasma processing chamber and onto a substrate support in opposition to a sputter target assembly comprising a tungsten target having no more than ten parts per million of carbon and no more than ten parts per million of oxygen present as impurities; flowing krypton into the plasma processing chamber; and exciting the krypton into a plasma to deposit, by sputtering, a tungsten film layer on a material layer of a substrate supported by the substrate support. In some embodiments, the target assembly further includes a titanium backing plate and an aluminum bonding layer disposed between the titanium backing plate and the tungsten target.
    Type: Grant
    Filed: August 1, 2018
    Date of Patent: August 4, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jothilingam Ramalingam, Thanh X. Nguyen, Zhiyong Wang, Jianxin Lei, Xianmin Tang
  • Patent number: 10718049
    Abstract: Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.
    Type: Grant
    Filed: December 4, 2017
    Date of Patent: July 21, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Muhammad Rasheed, Rongjun Wang, Zhendong Liu, Xinyu Fu, Xianmin Tang
  • Patent number: 10714388
    Abstract: Methods and apparatus for depositing a cobalt layer in a feature, such as, a word line formed in a substrate, are provided herein. In some embodiments, method of processing a substrate includes: exposing a substrate at a first temperature to a cobalt containing precursor to deposit a cobalt layer within a word line feature formed in the substrate, wherein the word line feature is part of a 3D NAND device; and annealing the substrate to remove contaminants from the cobalt layer and to reflow the cobalt layer into the word line feature, wherein the substrate is at a second temperature greater than the first temperature during the annealing.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: July 14, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jin Hee Park, Tae Hong Ha, Sang-Hyeob Lee, Thomas Jongwan Kwon, Jaesoo Ahn, Xianmin Tang, Er-Xuan Ping, Sree Kesapragada
  • Publication number: 20200219720
    Abstract: Methods and apparatus for asymmetric deposition of a material on a structure formed on a substrate are provided herein. In some embodiments, a method for asymmetric deposition of a material includes forming a plasma from a process gas comprising ionized fluorocarbon (CxFy) particles, depositing an asymmetric fluorocarbon (CxFy) polymer coating on a first sidewall and a bottom portion of an opening formed in a first dielectric layer using angled CxFy ions, depositing a metal, metallic nitride, or metallic oxide on a second sidewall of the opening, and removing the CxFy polymer coating from the first sidewall and the bottom portion of the opening to leave an asymmetric deposition of the metal, metallic nitride, or metallic oxide on the structure.
    Type: Application
    Filed: March 9, 2020
    Publication date: July 9, 2020
    Inventors: BEN-LI SHEU, BENCHERKI MEBARKI, JOUNG JOO LEE, ISMAIL EMESH, ROEY SHAVIV, XIANMIN TANG
  • Patent number: 10707122
    Abstract: In some embodiments, a method of forming an interconnect structure includes selectively depositing a barrier layer atop a substrate having one or more exposed metal surfaces and one or more exposed dielectric surfaces, wherein a thickness of the barrier layer atop the one or more exposed metal surfaces is greater than the thickness of the barrier layer atop the one or more exposed dielectric surfaces. In some embodiments, a method of forming an interconnect structure includes depositing an etch stop layer comprising aluminum atop a substrate via a physical vapor deposition process; and depositing a barrier layer atop the etch stop layer via a chemical vapor deposition process, wherein the substrate is transferred from a physical vapor deposition chamber after depositing the etch stop layer to a chemical vapor deposition chamber without exposing the substrate to atmosphere.
    Type: Grant
    Filed: September 24, 2018
    Date of Patent: July 7, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Sree Rangasai V. Kesapragada, Kevin Moraes, Srinivas Guggilla, He Ren, Mehul Naik, David Thompson, Weifeng Ye, Yana Cheng, Yong Cao, Xianmin Tang, Paul F. Ma, Deenesh Padhi
  • Publication number: 20200211852
    Abstract: Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl4), hydrogen (H2) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees Celsius; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.
    Type: Application
    Filed: December 5, 2019
    Publication date: July 2, 2020
    Inventors: TAKASHI KURATOMI, I-CHENG CHEN, AVGERINOS V. GELATOS, PINGYAN LEI, MEI CHANG, XIANMIN TANG
  • Publication number: 20200199741
    Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: directing a stream of material from a PVD source toward a surface of a substrate at a first non-perpendicular angle to the plane of the surface to deposit the material on one or more features on the substrate and form a first overhang; etching the layer of the substrate beneath the features selective to the deposited material to form a first part of a pattern; removing the material from the features; directing the stream of material from the PVD source toward the surface of the substrate at a second non-perpendicular angle to the plane of the surface to deposit the material on the features on the substrate and form a second overhang; and etching the layer of the substrate beneath the features selective to the deposited material to form a second part of the pattern.
    Type: Application
    Filed: December 19, 2018
    Publication date: June 25, 2020
    Inventors: BENCHERKI MEBARKI, WENHUI WANG, HUIXIONG DAI, CHRISTOPHER NGAI, JOUNG JOO LEE, XIANMIN TANG
  • Publication number: 20200203144
    Abstract: Methods and apparatus for reducing arcing of a silicon oxide layer in a film stack are provided. In some embodiments a method for reducing arcing of a silicon oxide layer in a film stack includes: depositing a silicon oxide layer having a top surface atop a low-k dielectric layer, wherein the silicon oxide layer and low-k dielectric layer are disposed upon a substrate and within a film stack; contacting the silicon oxide layer with argon plasma in an amount sufficient to clean the silicon oxide layer; and depositing a nitride layer atop the silicon oxide layer.
    Type: Application
    Filed: March 29, 2019
    Publication date: June 25, 2020
    Inventors: CHAO DU, VAIBHAV SONI, LIN TL, YONG CAO, MINGDONG LI, MINGTE LIU, CHEN GONG, XIAODONG WANG, RONGJUN WANG, XIANMIN TANG