Patents by Inventor Xiao-Chun Mu

Xiao-Chun Mu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Post dry-etch cleaning method for restoring wafer properties
    Patent number: 4897154
    Abstract: A post dry etching process for restoring wafers damaged by dry etching such as RIE, comprising the steps of removing any dry etch residue layer from the etched portions of the wafer and forming an oxide on those etched portions; rapid thermal annealing the wafer to drive the oxygen from the oxide layer down into the wafer by a small amount, to getter impurities to this oxide layer, and to restore crystallinity below the oxide layer; and removing the oxide layer via an HF bath or a low powder dry etch process.
    Type: Grant
    Filed: July 3, 1986
    Date of Patent: January 30, 1990
    Assignee: International Business Machines Corporation
    Inventors: Satya N. Chakravarti, Stephen J. Fonash, Xiao-Chun Mu