Abstract: A microelectronic package including a microelectronic die having an active surface and at least one side. An encapsulation material is disposed adjacent the microelectronic die side(s). A portion of the encapsulation material is removed to expose a back surface of the microelectronic die which has a metallization layer disposed thereon. A protective layer is disposed on the metallization layer prior to encapsulation, such that when the portion of the encapsulation material is removed, the protective layer prevents the metallization layer from being damaged. After the portion of the encapsulation material is removed, the protective layer is removed and the metallization layer is exposed. A heat spreader may then be attached to the microelectronic die by abutting the heat spreader against the metallization layer and reflowing the metallization layer.

Abstract: A microelectronic package including a microelectronic die having an active surface and at least one side. An encapsulation material is disposed adjacent the microelectronic die side(s). A portion of the encapsulation material is removed to expose a back surface of the microelectronic die which has a metallization layer disposed thereon. A protective layer is disposed on the metallization layer prior to encapsulation, such that when the portion of the encapsulation material is removed, the protective layer prevents the metallization layer from being damaged. After the portion of the encapsulation material is removed, the protective layer is removed and the metallization layer is exposed. A heat spreader may then be attached to the microelectronic die by abutting the heat spreader against the metallization layer and reflowing the metallization layer.

Abstract: A microelectronic package including a microelectronic die having an active surface and at least one side. An encapsulation material is disposed adjacent the microelectronic die side(s). A portion of the encapsulation material is removed to expose a back surface of the microelectronic die which has a metallization layer disposed thereon. A protective layer is disposed on the metallization layer prior to encapsulation, such that when the portion of the encapsulation material is removed, the protective layer prevents the metallization layer from being damaged. After the portion of the encapsulation material is removed, the protective layer is removed and the metallization layer is exposed. A heat spreader may then be attached to the microelectronic die by abutting the heat spreader against the metallization layer and reflowing the metallization layer.

Abstract: A method is provided including attaching an encapsulant to an integrated circuit (IC), forming a substrate from at least one layer of dielectric, attaching at least one electrical contact to the substrate, attaching a first surface of the substrate to the encapsulant so that the substrate is connected to the IC, attaching an electrical element to a second surface of the substrate, and electronically connecting the first surface of the substrate and the second surface of the substrate.

Abstract: A microelectronic package fabrication technology that attaches at least one microelectronic die onto a heat spreader and encapsulates the microelectronic die/dice thereon which may further include a microelectronic packaging core abutting the heat spreader wherein the microelectronic die/dice reside within at least one opening in a microelectronic package core. After encapsulation, build-up layers may be fabricated to form electrical connections with the microelectronic die/dice.

Abstract: This invention relates to a simple and quick method for the detection, identification and/or quantitation of binding factors using fluorescence techniques. A fluorescent probe is incubated with a factor or group of factors, and the presence of a factor capable of binding the probe can be detected by fluorescence polarization. When coupled with a separation step, this invention allows on-line monitoring of binding complex formation.

Abstract: According to an embodiment of the invention, an integrated circuit (IC) package is provided that includes a flexible circuit board that has a first surface and a second surface. An integrated circuit mounted to the first surface of the flexible circuit board is provided. An electrical element is attached to the second surface of the flexible circuit board. Also, an encapsulant is attached to the flexible circuit board and the integrated circuit. The flexible circuit board includes at least one layer of dielectric that is no greater than approximately 35 microns thick. In another embodiment, the integrated circuit and the electrical element may be interchanged. A method is provided including attaching an encapsulant to an IC, forming a substrate from at least one layer of dielectric, attaching at least one electrical contact to the substrate, and attaching the substrate to the encapsulant so that the substrate is connected to the IC.

Abstract: Methods and apparatuses are disclosed in which a refractory layer is formed during rapid thermal processing wherein ambient hydrogen is used in the thermal processing chamber. Rapid thermal processing may occur at a temperature approximately in the range of 350° C. to approximately 550° C.

Abstract: One embodiment of the invention involves a refractory layer formed over a substrate during rapid thermal processing in which ambient hydrogen is used in a thermal processing chamber. Rapid thermal processing may occur at a temperature approximately in the range of 350° C. to approximately 550° C.

Abstract: A floor cleaner includes a chassis having an elevator mechanism, caster wheels, and a pair of main wheels; a tank removably supported by the chassis for holding cleaning liquid; and a carpet belt. Laterally oriented rollers are supported by the chassis for supporting the carpet belt in a closed path, including a cleaning roller for submerging a portion of the carpet belt within the tank, front and rear wringer rollers, front and rear press rollers, front and rear platen rollers, and an idler roller. A platen member presses the carpet belt against the floor surface. A roller drive rotatably couples the front platen roller to the main wheels for regulating a rate of advancement of the carpet belt during longitudinal movement of the apparatus when the elevator mechanism is in a normal position. The cleaning roller has a raised position clear of the tank, which can be slid on tracks laterally out of the chassis for facilitating lifting of the tank clear of the chassis.

Abstract: The present invention provides methods for the detection and quantitation of any modification of interest in any nucleic acid sequence. In particular, the invention provides methods for detecting and quantitating low levels of modifications of interest in DNA sequences. The methods of the invention take advantage of combining the use of nucleic acid sequence modification-specific molecules which are specific for DNA modifications, of fluorescently labelled proteins which are specific for the nucleic acid sequence modification-specific molecules, of capillary electrophoresis and of laser-induced fluorescence. The methods of the invention are useful for identifying and detecting exposure to carcinogens, in early risk assessment for cancer, and in monitoring of cancer therapy.

Abstract: This invention is directed to the synthesis of high bulk density high gas absorption capacity adsorbents for gas storage applications. Specifically, this invention is concerned with novel gas absorbents with high gravimetric and volumetric gas adsorption capacities which are made from fullerene-based materials. By pressing fullerene powder into pellet form using a conventional press, then polymerizing it by subjecting the fullerene to high temperature and high inert gas pressure, the resulting fullerene-based materials have high bulk densities and high gas adsorption capacities. By pre-chemical modification or post-polymerization activation processes, the gas adsorption capacities of the fullerene-based adsorbents can be further enhanced. These materials are suitable for low pressure gas storage applications, such as oxygen storage for home oxygen therapy uses or on-board vehicle natural gas storage.

Abstract: Apparatus for cleaning a floor surface includes a chassis having a frame, an elevator mechanism, and a plurality of ground-contacting wheels; a tank supported by the chassis for holding a quantity of cleaning liquid; a sweeper module removably connectable to the chassis; and a carpet belt member. A plurality of laterally oriented rollers are supported by the chassis for supporting the carpet belt member in a closed path, including a cleaning roller for submerging a portion of the carpet belt within the tank, first and second wringer rollers, first and second press rollers, an adjustment roller for tensioning the carpet roller, an idler roller, and a drive roller. An insert member is supported by the chassis, the cleaning roller and the press roller being supported by the insert member. A main handle pivotally mounted to the insert member manipulates the apparatus on the floor surface.

Abstract: A film sleever machine includes a first stepper motor for activating a sleeve delivery device which has a driving shaft and a roller shaft mounted parallelly for feeding a film wearing bag material. A film feeding device which has a film driving wheel and a pressure wheel is activated by a second stepper motor for feeding a roll of film to insert into a plurality of film wearing sleeve of the film wearing bag material. The first stepper motor also activates a film cutter device to cut off the film. The second stepper motor also activates a sleeve cutter device to cut off the film wearing bag material. Accordingly, the film sleever machine can be operated to feed the film, cut the film, feed the sleeves, and cut off the sleeves automatically.

Abstract: A method for forming a material in an opening on a substrate, such as a wafer, using an electron cyclotron resonance-assisted high density plasma physical vapor deposition system. The method comprises the steps of: maintaining a pressure in the range of approximately 1 mTorr to approximately 6 mTorr; generating a plasma by providing a microwave power in the range of approximately 3 kilowatts (kW) to approximately 5 kW; applying a direct current (DC) voltage to a target source of the material in the range of approximately (negative) -600 volts to approximately -1000 volts; providing a current of a predetermined amount to a first electromagnet; and providing a current to a second electromagnet that is less than said predetermined amount, wherein said second electromagnet is disposed below said first electromagnet; and forming a layer of the material in the opening.

Abstract: A device and methods of forming an interconnection within a prepatterned channel in a semiconductor device are described. The present invention includes a method of forming an interconnect channel within a semiconductor device. A first dielectric layer is deposited over a substrate and patterned to form a contact opening that is subsequently filled with a contact plug. A second dielectric layer is deposited over the patterned first dielectric layer and the contact plug. The second dielectric layer is patterned to form the interconnect channel, wherein the first dielectric layer acts as an etch stop to prevent etching of the substrate. The present invention also includes a method of forming an interconnect. A dielectric layer is deposited over a substrate and patterned to form an interconnect chapel. A metal layer is deposited over the patterned dielectric layer and within the interconnect channel.

Abstract: The present invention discloses a method for anisotropically etching metal interconnects in the fabrication of semiconductor devices, especially ULSI interconnects having high aspect ratios. A metal film is first deposited on the appropriate layer of a semiconductor substrate by techniques well-known in the art. A mask layer is deposited over the metal film with openings defined in the mask layer for patterning of the metal film. Ions are then introduced into an exposed region of the metal film to anisotropically form a converted layer of the metal film comprising compounds of the metal. The introduction of the ions into the metal film can be performed by conventional methods, such as through the use of a reactive ion etch system or an ion implantation system, or by any other method which anisotropically forms the metal compounds. The mask layer is then removed by conventional means to leave behind the metal film having a converted layer of metal compounds.

Abstract: An intelligent security device (10) is disclosed for protecting computer software from unauthorized use. The security device (10) is a hardware device having within a microprocessor (36) for interacting with a host computer (32) such that protected software may not be operated unless the security device (10) is in place. Physical duplication of the security device (10) will not result in a workable copy, due to the nature of the microprocessor (36), which is such that information is encoded therein and further such that encryption codes are also stored therein and cannot be discovered after the microprocessor (36) is locked by any known means. A system clock (21) within the microprocessor (36) is adaptable to the purpose of permitting use of the protected software only within limited time parameters.

Abstract: An etchback process for etching a refractory metal layer formed on a semiconductor substrate with a greatly reduced micro-loading effect. The etch proceeds in three steps. The first step is a uniform etch which utilizes a gas chemistry of SF.sub.6, O.sub.2 and He and proceeds for a predetermined time to remove most of the metal layer. The second step is a very uniform etch which utilizes a gas chemistry of SF.sub.6, Cl.sub.2 and He and proceeds until the endpoint is detected. The endpoint is detected by measurement and integration of the 772 nm and 775 nm lines of Cl. The third step is a timed etch utilizing a gas chemistry of Cl.sub.2 and He which is used as both an overetch to ensure complete removal of the refractory metal film and as a selective etchant to remove an adhesion underlayer.

Abstract: An etchback process for etching a refractory metal layer formed on a semiconductor substrate with a greatly reduced micro-loading effect. The etch proceeds in three steps. The first step is a uniform etch which utilizes a gas chemistry of SF.sub.6, O.sub.2 and He and proceeds for a predetermined time to remove most of the metal layer. The second step is a very uniform etch which utilizes a gas chemistry of SF.sub.6, Cl.sub.2 and He and proceeds until the endpoint is detected. The endpoint is detected by measurement and integration of the 772 nm and 775 nm lines of Cl. The third step is a timed etch utilizing a gas chemistry of Cl.sub.2 and He which is used as both an overetch to ensure complete removal of the refractory metal film and as a selective etchant to remove an adhesion underlayer.