Abstract: A continuous solution polymerization process is disclosed wherein at least two homogeneous catalyst formulations are employed. A first homogeneous catalyst formulation is employed in a first reactor to produce a first ethylene interpolymer and a second homogeneous catalyst formulation is employed in a second reactor to produce a second ethylene interpolymer. Optionally a third ethylene interpolymer is formed in a third reactor. The resulting ethylene interpolymer products possess desirable properties in a variety of end use applications, for example in film applications. A means for increasing the molecular weight of the first ethylene interpolymer is disclosed and/or a means for increasing the temperature of the first reactor, relative to the third homogeneous catalyst formulation. A means for reducing the (?-olefin/ethylene) weight ratio in the first reactor is disclosed and/or reducing the density of the first ethylene interpolymer, relative to the third homogeneous catalyst formulation.

Abstract: A radio frequency integrated circuit (RFIC) device and a method for fabricating same are disclosed. The RFIC device includes: a first semiconductor layer having a first surface, a second surface and a thickness of smaller than 3 ?m; a first dielectric layer on the first surface of the first semiconductor layer; a semiconductor component within the first semiconductor layer and the first dielectric layer; a second dielectric layer on the second surface of the first semiconductor layer, the second dielectric layer having a thickness of smaller than 1 ?m; and a sheet-like heat sink that is formed on the surface of the second dielectric layer opposite to the first semiconductor layer for dissipating heat from the semiconductor component. Efficient dissipation of heat from an RF transistor to a certain extent can be achieved by the RFIC device.

Abstract: This disclosure relates to a continuous solution three reactor polymerization process. Process solvent, ethylene, optional comonomers, optional hydrogen and a single site catalyst system are injected into a first and second reactor configured in parallel to one another. A third reactor receives effluent from the first reactor, the second reactor, or a combination of the first and second reactors. Fresh monomer is feed to the third reactor for further polymerization and to give a final polyethylene product.

Abstract: A polyethylene composition includes a first polyethylene which is an ethylene copolymer having a weight average molecular weight of from 70,000 to 250,000 and a molecular weight distribution Mw/Mn of <2.3, a second polyethylene which is an ethylene copolymer or homopolymer having a weight average molecular weight of from 15,000 to 100,000, a molecular weight distribution Mw/Mn of >2.3, and a third polyethylene which is an ethylene copolymer or homopolymer having a weight average molecular weight of from 70,000 to 250,000 and a molecular weight distribution Mw/Mn of >2.3, where the first polyethylene has more short chain branching than the second polyethylene or the third polyethylene. The polyethylene composition has a soluble fraction in a CEF analysis of at least 10 weight percent. Film made from the polyethylene composition may have a machine direction 1% secant modulus of ?200 MPa (at a film thickness of about 1 mil), a seal initiation temperature (SIT) of ?90° C.

Abstract: A polyethylene composition includes a first polyethylene which is an ethylene copolymer having a weight average molecular weight of from 70,000 to 250,000 and a molecular weight distribution Mw/Mn of <2.3, a second polyethylene which is an ethylene copolymer or homopolymer having a weight average molecular weight of from 15,000 to 100,000 and a molecular weight distribution Mw/Mn of <2.3, and a third polyethylene which is an ethylene copolymer or homopolymer having a weight average molecular weight of from 70,000 to 250,000 and a molecular weight distribution Mw/Mn of >2.3, where the first polyethylene has more short chain branching than the second polyethylene or the third polyethylene. The polyethylene composition has a soluble fraction in a CEF analysis of at least 10 weight percent. Film made from the polyethylene composition may have a machine direction 1% secant modulus of ?190 MPa (at a film thickness of about 1 mil), a seal initiation temperature (SIT) of ?100° C.

Abstract: A polyethylene composition comprises a first polyethylene which is an ethylene copolymer having a weight average molecular weight of from 70,000 to 250,000 and a molecular weight distribution Mw/Mn of <2.3, a second polyethylene which is an ethylene copolymer or homopolymer having a weight average molecular weight of less than 75,000 and a molecular weight distribution Mw/Mn of <2.3, and a third polyethylene which is an ethylene copolymer or homopolymer having a weight average molecular weight of from 100,000 to 300,000 and a molecular weight distribution Mw/Mn of >2.3, where the first polyethylene has more short chain branching than the second polyethylene or the third polyethylene. The polyethylene composition has a soluble fraction in a CEF analysis of at least 15 weight percent.

Abstract: A polyethylene composition comprises a first polyethylene which is an ethylene copolymer having a weight average molecular weight of from 70,000 to 250,000 and a molecular weight distribution Mw/Mn of <2.3, a second polyethylene which is an ethylene copolymer or homopolymer having a weight average molecular weight of from 50,000 to 200,000 and a molecular weight distribution Mw/Mn of <2.3, and a third polyethylene which is an ethylene copolymer or homopolymer having a weight average molecular weight of from 70,000 to 200,000 and a molecular weight distribution Mw/Mn of <2.3, where the first polyethylene has more short chain branching than the second polyethylene or the third polyethylene. The polyethylene composition has a composition distribution breadth index, CDBI50 obtained from a crystallization elution fractionation (CEF) analysis of <45 weight %.

Abstract: In some embodiments disclosed herein are polyethylene composition including a first polyethylene which is an ethylene copolymer having a weight average molecular weight of from 70,000 to 250,000 and a molecular weight distribution Mw/Mn of <2.3, a second polyethylene which is an ethylene copolymer or homopolymer having a weight average molecular weight of less than 75,000 and a molecular weight distribution Mw/Mn of <2.3, a third polyethylene which is an ethylene copolymer or homopolymer having a weight average molecular weight of less than 75,000 and a molecular weight distribution Mw/Mn of <2.3, and a fourth polyethylene which is an ethylene copolymer or homopolymer having a weight average molecular weight of from 100,000 to 250,000 and a molecular weight distribution Mw/Mn of >2.3, where the first polyethylene has more short chain branching than the second polyethylene or the third polyethylene. The polyethylene composition may have a soluble fraction in a CEF analysis of at least 7.

Abstract: A dual reactor solution process gives high density polyethylene compositions containing a first ethylene copolymer and a second ethylene copolymer and which have good processability, stiffness, and environmental stress crack resistance. The polyethylene compositions are suitable for compression molding or injection molding applications and are particularly useful in the manufacture of caps and closures for bottles.

Abstract: A film bulk acoustic wave resonator (BAWR) includes a first substrate; a first insulating material layer; and a first cavity, formed in the first insulating material layer. The film BAWR also includes a first electrode containing a first electrode cavity; a second electrode containing a second electrode cavity; and a first piezoelectric oscillation plate, sandwiched between the first electrode and the second electrode. Without having any parallel edges, the boundary of the first piezoelectric oscillation plate is entirely enclosed in the first cavity boundary, and at least includes an overlapping region of the boundary of the first electrode cavity and the boundary of the second electrode cavity. The film BAWR further includes a plurality of second and third piezoelectric oscillation plates, disposed between the first electrode and the second electrode to receive and absorb vibration energy transmitted out through vibration waves induced in the first electrode and the second electrode.

Abstract: A radio frequency integrated circuit (RFIC) device and a method for fabricating same are disclosed. The RFIC device includes: a first semiconductor layer having a first surface, a second surface and a thickness of smaller than 3 ?m; a first dielectric layer on the first surface of the first semiconductor layer; a semiconductor component within the first semiconductor layer and the first dielectric layer; a second dielectric layer on the second surface of the first semiconductor layer, the second dielectric layer having a thickness of smaller than 1 ?m; and a sheet-like heat sink that is formed on the surface of the second dielectric layer opposite to the first semiconductor layer for dissipating heat from the semiconductor component. Efficient dissipation of heat from an RF transistor to a certain extent can be achieved by the RFIC device.

Abstract: A display driver panel device and a method therefor are disclosed. The device includes: an image sensor array consisting of pixel sensor elements arranged in M rows and N columns; and a display driver array consisting of display driver elements arranged in M rows and N columns. Each of the display driver elements corresponds to a respective one of the pixel sensor elements. As such, first display input signals generated by the pixel sensor elements from a received external imaging radiation can be sent to the respective corresponding display driver elements. As a result, the display driver elements respond at the same time, resulting in an increased response speed of the display driver panel device.

Abstract: A radio frequency integrated circuit (RFIC) device and methods for fabricating same are disclosed. The RFIC device includes: a first semiconductor layer having a first surface, a second surface parallel to the first surface and a thickness of smaller than 3 ?m; a first dielectric layer on the first surface of the first semiconductor layer; a semiconductor component within the first semiconductor layer and the first dielectric layer; a second dielectric layer on the second surface of the first semiconductor layer, the second dielectric layer having a thickness of smaller than 1 ?m; and a sheet-like heat sink formed on a surface of the first dielectric layer opposite to the first semiconductor layer for dissipating heat from the semiconductor component. Efficient dissipation of heat from an RF transistor to a certain extent can be achieved by the RFIC device.

Abstract: A film bulk acoustic wave resonator includes a first substrate; a first insulating material layer, formed on the first substrate; a first cavity, formed in the first insulating material layer with an opening facing away from the first substrate; and an acoustic-wave resonant plate, including a first electrode, a piezoelectric oscillation plate, and a second electrode stacked on the first insulating material layer. The piezoelectric oscillation plate is disposed between the first electrode and the first electrode. The first electrode includes a first electrode cavity above the first cavity. The second electrode includes a second cavity above the first cavity. At least a portion of a boundary of the piezoelectric oscillation plate is formed by a boundary of the first electrode cavity and a boundary of the second electrode cavity. The boundary of the piezoelectric oscillation plate has an irregular polygonal shape without having two parallel edges.

Abstract: A continuous solution polymerization process is disclosed wherein at least two homogeneous catalyst formulations are employed. A first homogeneous catalyst formulation is employed in a first reactor to produce a first ethylene interpolymer and a second homogeneous catalyst formulation is employed in a second reactor to produce a second ethylene interpolymer. Optionally a third ethylene interpolymer is formed in a third reactor. The resulting ethylene interpolymer products possess desirable properties in a variety of end use applications, for example in film applications. A means for increasing the molecular weight of the first ethylene interpolymer is disclosed and/or a means for increasing the temperature of the first reactor, relative to the third homogeneous catalyst formulation. A means for reducing the (?-olefin/ethylene) weight ratio in the first reactor is disclosed and/or reducing the density of the first ethylene interpolymer, relative to the third homogeneous catalyst formulation.

Abstract: A continuous solution polymerization process is disclosed wherein at least two catalyst formulations are employed. A first homogeneous catalyst formulation is employed in a first reactor to produce a first ethylene interpolymer and a first heterogeneous catalyst formulation is employed in a second reactor to produce a second ethylene interpolymer. Optionally a third ethylene interpolymer is formed in a third reactor. The resulting ethylene interpolymer products possess desirable properties in a variety of end use applications, for example in film applications. A means for increasing the molecular weight of the first ethylene interpolymer is disclosed and/or a means for increasing the temperature of the first reactor, relative to a third homogeneous catalyst formulation. A means for reducing the (?-olefin/ethylene) weight ratio in the first reactor is disclosed and/or reducing the density of the first ethylene interpolymer, relative to a third homogeneous catalyst formulation.

Abstract: Bimodal polyethylene compositions for use in hot-fill closures and processes.

Abstract: A radio frequency integrated circuit (RFIC) device and a method for fabricating same are disclosed. The RFIC device includes: a first semiconductor layer having a first surface, a second surface and a thickness of smaller than 3 ?m; a first dielectric layer on the first surface of the first semiconductor layer; a semiconductor component within the first semiconductor layer and the first dielectric layer; a second dielectric layer on the second surface of the first semiconductor layer, the second dielectric layer having a thickness of smaller than 1 ?m; and a sheet-like heat sink that is formed on the surface of the second dielectric layer opposite to the first semiconductor layer for dissipating heat from the semiconductor component. Efficient dissipation of heat from an RF transistor to a certain extent can be achieved by the RFIC device.

Abstract: This disclosure relates to caps and closures manufactured from an ethylene interpolymer product, or a blend containing an ethylene interpolymer product.

Abstract: A polyethylene blend comprises a nucleated polyethylene homopolymer composition and an un-nucleated or nucleated bimodal polyethylene copolymer.