Abstract: A battery management system with synchronized data sampling for a battery pack including multiple battery cells is disclosed. The battery management system includes a plurality of local monitors coupled to a plurality of battery cells and operable for sampling status information for the battery cells. The battery management system further includes a central controller coupled to the local monitors and operable for broadcasting a sample command to the local monitor synchronously, wherein the local monitors start to sample the status information for the battery cells in response to the sample command.

Abstract: Methods of forming carbon nanotubes include forming a catalytic metal layer on a sidewall of an electrically conductive region, such as a metal or metal nitride pattern. A plurality of carbon nanotubes are grown from the catalytic metal layer. These carbon nanotubes can be grown from a sidewall of the catalytic metal layer. The plurality of carbon nanotubes are then exposed to an organic solvent. This step of exposing the carbon nanotubes to the organic solvent may be preceded by a step of applying centrifugal forces to the plurality of carbon nanotubes. Alternatively, the exposing step may include applying a centrifugal force to the plurality of carbon nanotubes while simultaneously exposing the plurality of carbon nanotubes to an organic solvent.

Abstract: Absorbent product including a package, at least one absorbent article and a miniature model.

Abstract: In a memory device having a carbon nanotube and a method of manufacturing the same, the memory device includes a lower electrode, an upper electrode having a first void exposing a sidewall of a diode therein, an insulating interlayer pattern having a second void exposing a portion of the lower electrode between the lower electrode and the upper electrode, and a carbon nanotube wiring capable of being electrically connected with the diode of the upper electrode by a voltage applied to the lower electrode. The memory device may reduce generation of a leakage current in a cross-bar memory.

Abstract: The invention relates to a method of preparing omni-meta aromatic polysulfonamide fiber which comprises three steps of preparing spinning dope, wet spinning and post treating. The said step of preparing spinning dope comprises the following steps: (1) dissolving 3,3?-diaminodiphenyl sulphone in a polar organic solvent and cooling it to ?20˜20° C.; (2) adding m-phthaloyl chloride of the same mole of the 3,3?-diaminodiphenyl sulphone to carry out a polymerization reaction; (3) then adding an inorganic base of the same mole of 3,3?-diaminodiphenyl sulphone to neutralize the hydrogen chloride produced during the polymerization reaction. The spinning dope thus prepared has a polymer solid content of 10%-20%. The fiber prepared according to the method in the present invention has a greatly improved crimpability, and evidently increased elongation at break comparing with the conventional aromatic polysulfonamide fiber, so that the spinnability of resultant yarn is improved.

Abstract: A nonvolatile memory device includes a semiconductor substrate. A charge storage insulating film containing metal silicide nanocrystals is on the substrate. A gate electrode is on the charge storage insulating film. Related methods of forming metal silicide nanocrystals, and methods of forming nonvolatile memory devices including metal silicide nanocrystals, are also disclosed.

Abstract: A method of forming a microelectronic device includes forming a groove structure having opposing sidewalls and a surface therebetween on a substrate to define a nano line arrangement region. The nano line arrangement region has a predetermined width and a predetermined length greater than the width. At least one nano line is formed in the nano line arrangement region extending substantially along the length thereof and coupled to the surface of the groove structure to define a nano line structure. Related devices are also discussed.

Abstract: A cancellation circuit to remove the anti-resonance signal from a resonator. Micro-mechanical and surface and bulk acoustic wave resonators include an anti-resonance in an output signal. This has an undesirable effect on certain types of systems in their function and performance. An anti-resonance cancellation circuit removes the anti-resonance from the output of the resonators by providing a signal which is subtracted from the output of the resonator. The cancellation circuit includes a capacitor which is matched to the static capacitance of the resonator. The loads of the resonator and cancellation network are also matched.

Abstract: Multi-stage networks are used for data stream permutations involving merging and demultiplexing—providing arbitrary data unit time-space interchange that can be used to solve a range of problems particularly in the field of digital data communications, particularly in digital data communication involving advanced networks for exchanging data in packets, cells, or other data units.

Abstract: A cancellation circuit to remove the anti-resonance signal from a resonator. Micro-mechanical and surface and bulk acoustic wave resonators include an anti-resonance in an output signal. This has an undesirable effect on certain types of systems in their function and performance. An anti-resonance cancellation circuit removes the anti-resonance from the output of the resonators by providing a signal which is subtracted from the output of the resonator. The cancellation circuit includes a capacitor which is matched to the static capacitance of the resonator. The loads of the resonator and cancellation network are also matched.

Abstract: A cancellation circuit to remove the anti-resonance signal from a resonator. Micro-mechanical and surface and bulk acoustic wave resonators include an anti-resonance in an output signal. This has an undesirable effect on certain types of systems in their function and performance. An anti-resonance cancellation circuit removes the anti-resonance from the output of the resonators by providing a signal which is subtracted from the output of the resonator. The cancellation circuit includes a capacitor which is matched to the static capacitance of the resonator. The loads of the resonator and cancellation network are also matched.

Abstract: A cancellation circuit to remove the anti-resonance signal from a resonator. Micro-mechanical and surface and bulk acoustic wave resonators include an anti-resonance in an output signal. This has an undesirable effect on certain types of systems in their function and performance. An anti-resonance cancellation circuit removes the anti-resonance from the output of the resonators by providing a signal which is subtracted from the output of the resonator. The cancellation circuit includes a capacitor which is matched to the static capacitance of the resonator. The loads of the resonator and cancellation network are also matched.