Abstract: A nanochannel GaN-based device includes: a substrate layer, a nucleation layer, a buffer layer, a channel region, an insertion layer, a barrier layer, a cap layer, a first highly n+-doped material layer, a second n+-doped material layer, a source electrode, a drain electrode, and a gate electrode. A first arrayed pattern edge is formed on a side of the first n+-doped material layer facing towards the drain electrode. A second arrayed pattern edge is formed on a side of the second n+-doped material layer facing towards the source electrode. A part of the channel region, the insertion layer, the barrier layer and the cap layer form an arrayed nanochannel structure between a source electrode and a drain electrode. The first arrayed pattern edge is interdigitated with an end of the arrayed nanochannel structure. The second arrayed pattern edge is interdigitated with another end of the arrayed nanochannel structure.

Abstract: A quasi-vertical JBS diode and a monolithic integrated three-phase DRU are provided. The quasi-vertical JBS diode includes a Si substrate, a N+ GaN conductive layer and an N-type GaN drift layer sequentially disposed from bottom to top. A top region of the N-type GaN drift layer defines groove structures distributed concentrically and annularly, and a Mg-doped P-type BN material is disposed on an inside of each of the groove structures and a side of the N-type GaN drift layer. An anode is disposed on a surface of the N-type GaN drift layer defining the groove structures. A cathode is disposed on a surface of the N+ GaN conductive layer at intervals around the N-type GaN drift layer. The monolithic integrated three-phase DRU includes three AC input terminals, two rectified DC output terminals and diode groups corresponding to six rectifier bridge arms. The diodes each are the quasi-vertical JBS diode.

Abstract: A MOSFET device based on nickel oxide (NiO) gate modulation and its preparation method are provided. The MOSFET device includes a substrate layer, a first N-type gallium nitride (GaN) layer, a second N-type GaN layer, a P-type GaN layer, and a third N-type GaN layer disposed sequentially from bottom to top; gate stepped parts extending from both ends of an upper surface of the third N-type GaN layer to an interior of the second N-type GaN layer; gate structures extending from the upper surface of the third N-type GaN layer to bottoms of the gate stepped parts; a source recess, a source electrode, drain electrodes and NiO modulation layers extending from the bottoms of the gate stepped parts to an upper surface of the first N-type GaN layer. By setting the NiO modulation layers, a voltage withstand level of the MOSFET device is improved.

Abstract: A nanochannel GaN-based device includes: a substrate layer, a nucleation layer, a buffer layer, a channel region, an insertion layer, a barrier layer, a cap layer, a first highly n+-doped material layer, a second n+-doped material layer, a source electrode, a drain electrode, and a gate electrode. A first arrayed pattern edge is formed on a side of the first n+-doped material layer facing towards the drain electrode. A second arrayed pattern edge is formed on a side of the second n+-doped material layer facing towards the source electrode. A part of the channel region, the insertion layer, the barrier layer and the cap layer form an arrayed nanochannel structure between a source electrode and a drain electrode. The first arrayed pattern edge is interdigitated with an end of the arrayed nanochannel structure. The second arrayed pattern edge is interdigitated with another end of the arrayed nanochannel structure.

Abstract: A GaN-based device based on patterned ohmic contact is provided, including: a substrate layer, a nucleation layer, a buffer layer, a channel layer, an insertion layer, a barrier layer and a cap layer sequentially disposed in that order from bottom to top. Two ends of the cap layer respectively define ohmic contact recesses extending into the channel layer. A side wall of each ohmic contact recess close to the gate electrode includes multiple arc-shaped side walls and multiple flat side walls. Two epitaxial layers are disposed in the ohmic contact recesses respectively. A passivation layer is covered on the cap layer and the two epitaxial layers, a source electrode and a drain electrode penetrate through the passivation layer and are disposed on the two epitaxial layers respectively. A gate electrode is located between the ohmic contact recesses, and penetrates through the passivation layer and extends to the cap layer.

Abstract: A GaN-based device based on patterned ohmic contact is provided, including: a substrate layer, a nucleation layer, a buffer layer, a channel layer, an insertion layer, a barrier layer and a cap layer sequentially disposed in that order from bottom to top. Two ends of the cap layer respectively define ohmic contact recesses extending into the channel layer. A side wall of each ohmic contact recess close to the gate electrode includes multiple arc-shaped side walls and multiple flat side walls. Two epitaxial layers are disposed in the ohmic contact recesses respectively. A passivation layer is covered on the cap layer and the two epitaxial layers, a source electrode and a drain electrode penetrate through the passivation layer and are disposed on the two epitaxial layers respectively. A gate electrode is located between the ohmic contact recesses, and penetrates through the passivation layer and extends to the cap layer.

Abstract: In the method, the first device may transmit to a second device a first initial duration of the first presentation time offset, where the first presentation time offset is a period from data being input to the first device to the data being output from the second device. Besides, the first device may receive, from the second device, the second initial duration of a second presentation time offset, where the second presentation time offset is a period from data being input to the second device to the data being output from the first device. Afterwards, the first device may determine an adjusted duration of the first presentation time offset based on a longer one of the first initial duration and the second initial duration.

Abstract: A negative electrode composition includes a silicon containing material and a crosslinked polymer containing coating surrounding at least a portion of the silicon containing material. The crosslinked polymer containing coating comprises a (co)polymer derived from polymerization of one or more vinylic monomers comprising a carboxyl or carboxylate group.

Abstract: A chemical reaction hazard analysis method is disclosed. Safety data and preventive measures of a chemical reaction are obtained through analysis of material stability, reaction process hazards and reaction runaway. The method can shorten a distance from laboratory to industrialization and realize an organic combination and application of technology, safety and engineer. The data obtain by the method can provide underlying basic data for process design, engineer amplification and the like, and lay a foundation for realizing process safety, improving quality and increasing efficiency.

Abstract: Embodiments of the present disclosure feature an intrinsically microporous ladder-type Tröger's base polymer including a repeat unit based on a combination of W-shaped CANAL-type and V-shaped Tröger's base building blocks, methods of making the intrinsically microporous ladder-type Tröger's base polymer, and methods of using the intrinsically microporous ladder-type Tröger's base polymer to separate a chemical species from a fluid composition including a mixture of chemical species. Embodiments of the present disclosure further include ladder-type diamine monomers for reacting to form a Tröger's base in situ, and methods of making the ladder-type diamine monomers using catalytic arene-norbornene annulation.

Abstract: Embodiments of the present disclosure describe polyimide blend compositions, methods of making polyimide blend compositions, methods of using polyimides, membranes including polyimide blends, methods of making membranes including polyimide blends, methods of separating mixtures using the membranes including polyimide blends, and the like.

Abstract: Transfer films, articles made therewith, and methods of making and using transfer films to form an electrical stack are disclosed. The transfer films may include a plurality of co-extensive electrical protolayers forming an electrical protolayer stack, at least selected or each electrical protolayer independently comprising at least 25 wt % sacrificial material and a thermally stable material and having a uniform thickness of less than 25 micrometers. The transfer films may include a plurality of co-extensive electrical protolayers forming an electrical protolayer stack, at least selected or each protolayer independently exhibiting a complex viscosity of between 103 and 104 Poise at a shear rate of 100/s when heated to a temperature between its Tg and Tdec.

Abstract: In the method, the first device may transmit to a second device a first initial duration of the first presentation time offset, where the first presentation time offset is a period from data being input to the first device to the data being output from the second device. Besides, the first device may receive, from the second device, the second initial duration of a second presentation time offset, where the second presentation time offset is a period from data being input to the second device to the data being output from the first device. Afterwards, the first device may determine an adjusted duration of the first presentation time offset based on a longer one of the first initial duration and the second initial duration.

Abstract: Embodiments of the present disclosure feature an intrinsically microporous ladder-type Tröger's base polymer including a repeat unit based on a combination of W-shaped CANAL-type and V-shaped Tröger's base building blocks, methods of making the intrinsically microporous ladder-type Tröger's base polymer, and methods of using the intrinsically microporous ladder-type Tröger's base polymer to separate a chemical species from a fluid composition including a mixture of chemical species. Embodiments of the present disclosure further include ladder-type diamine monomers for reacting to form a Tröger's base in situ, and methods of making the ladder-type diamine monomers using catalytic arene-norbornene annulation.

Abstract: A high electron mobility transistor (HEMT) device is provided. The HEMT device includes a substrate layer, a buffer layer, a barrier layer, and a metallic electrode layer sequentially arranged in that order from bottom to top. The metallic electrode layer includes a source electrode, a gate electrode and a drain electrode sequentially arranged in that order from left to right. The barrier layer may include m number of fluorine-doped regions arranged in sequence, where m is a positive integer and m?2. The HEMT device can realize a relative stability of transconductance in a large range of a gate-source-bias through mutual compensation of transconductances in the fluorine-doped regions with different fluorine-ion concentrations of the barrier layer under the gate electrode, and the HEMT device has a good linearity without the need of excessive adjustments of material structure and device.

Abstract: Thin film composite membrane with nano-sized bubbles having enhanced membrane permeability, preparation methods and uses thereof are provided. The method of preparation of a thin film composite membrane, comprising: a) an aqueous solution containing at least an amine, and b) an organic solution containing at least a polyfunctional acyl halide, an additive or soluble gas being present in a) and/or b), or a nano-bubble generator or ultrasound are used to generate nano-bubbles in a) and/or b). Interfacial polymerization of a) and b) occurs at or near the surface of a porous support membrane. The advantage of creating nano-sized bubbles in the separating layer of membrane is that it can reduce membrane resistance without sacrificing the mechanical strength and stability of the membrane so as to improve its water permeability, salt rejection and antifouling. In addition, the process is simple to adopt while performance improvement of the membrane is remarkable.

Abstract: An electrochemically active material includes an active phase that includes silicon, and at least one inactive phase having a Scherrer Grain Size of greater than 5 nanometers. Each inactive phase of the material having a Scherrer Grain Size of greater than 5 nanometers has a lattice mismatch to Li15Si4 of greater than 5%.

Abstract: Embodiments of the present disclosure provide compounds derived by Troger's amine as shown below, microporous structures, membranes, methods of making said compounds, structures, and membranes, methods of use for gas separation, and the like (Formula A1).

Abstract: Embodiments of the present disclosure provide for an ortho (o)-hydroxy-functionalized diamine, a method of making an o-hydroxy-functionalized diamine, an o-hydroxy-functionalized diamine-based polyimide, a method of making an o-hydroxy-functionalized diamine imide, methods of gas separation, and the like.

Abstract: An electrochemically active material includes an active phase that includes silicon, and at least one inactive phase having a Scherrer Grain Size of greater than 5 nanometers. Each inactive phase of the material having a Scherrer Grain Size of greater than 5 nanometers has a lattice mismatch to Li15Si4 of greater than 5%.