Abstract: The present invention relates to a cut-stem separating and baffling apparatus and a primary air separation apparatus. The cut-stem separating and baffling apparatus includes a cut-stem separating baffle and struts; and the strut includes a base, a hanging panel, and an inner hexagon adjustment bolt, where the base includes a connecting segment and a support segment that are connected to each other, where the connecting segment is located above the cut-stem separating baffle, and the support segment is located behind the cut-stem separating baffle; the hanging panel includes a transverse hanging panel, and a longitudinal hanging panel, and a connecting hanging panel is disposed in a direction of the longitudinal hanging panel toward the cut-stem separating baffle, where the connecting hanging panel is connected to the cut-stem separating baffle; and the connecting segment of the base is connected to the transverse hanging panel using the inner hexagon adjustment bolt.

Abstract: A heating assembly and an aerosol generation device are provided. The heating assembly includes a heating body. Several heat generation portions serve as a sidewall of the heating body. The several heat generation portions are connected end to end in sequence and at least partially spaced apart from each other. The several heat generation portions that are spaced apart from each other are configured to guide a current to flow along a preset path. The several heat generation portions cooperatively define an accommodating cavity for accommodating an inhalable material and for air circulation.

Abstract: The drilling system withstands downhole conditions at the bottom of the borehole and drilling conditions due to the constant movement and vibration. The drilling system includes a drill bit and a sensor system with a system housing, a primary power supply and interior sensor. The primary power supply includes piezoelectric panels for converting radial vibration into energy. The interior sensor is locally powered by the primary power supply at the remote downhole location at the bottom of the borehole. The interior sensor collects data related to a downhole condition and is in communication with the primary power supply to generate confirmed data based on the amount of energy generated by the primary power supply. The confirmed data is more accurate and reliable than the data collected by the interior sensor and can be used to guide the path of the drill bit through the rock formation in drilling operations.

Abstract: The drilling system withstands downhole conditions at the bottom of the borehole and drilling conditions due to the constant movement and vibration. The drilling system includes a drill bit and a sensor system with a system housing, a primary power supply and interior sensor. The primary power supply includes piezoelectric panels for converting radial vibration into energy. The interior sensor is locally powered by the primary power supply at the remote downhole location at the bottom of the borehole. The interior sensor collects data related to a downhole condition and is in communication with the primary power supply to generate confirmed data based on the amount of energy generated by the primary power supply. The confirmed data is more accurate and reliable than the data collected by the interior sensor and can be used to guide the path of the drill bit through the rock formation in drilling operations.

Abstract: A negative electrode composition includes a silicon containing material and a crosslinked polymer containing coating surrounding at least a portion of the silicon containing material. The crosslinked polymer containing coating comprises a (co)polymer derived from polymerization of one or more vinylic monomers comprising a carboxyl or carboxylate group.

Abstract: A chemical reaction hazard analysis method is disclosed. Safety data and preventive measures of a chemical reaction are obtained through analysis of material stability, reaction process hazards and reaction runaway. The method can shorten a distance from laboratory to industrialization and realize an organic combination and application of technology, safety and engineer. The data obtain by the method can provide underlying basic data for process design, engineer amplification and the like, and lay a foundation for realizing process safety, improving quality and increasing efficiency.

Abstract: Embodiments of the present disclosure feature an intrinsically microporous ladder-type Tröger's base polymer including a repeat unit based on a combination of W-shaped CANAL-type and V-shaped Tröger's base building blocks, methods of making the intrinsically microporous ladder-type Tröger's base polymer, and methods of using the intrinsically microporous ladder-type Tröger's base polymer to separate a chemical species from a fluid composition including a mixture of chemical species. Embodiments of the present disclosure further include ladder-type diamine monomers for reacting to form a Tröger's base in situ, and methods of making the ladder-type diamine monomers using catalytic arene-norbornene annulation.

Abstract: Embodiments of the present disclosure describe polyimide blend compositions, methods of making polyimide blend compositions, methods of using polyimides, membranes including polyimide blends, methods of making membranes including polyimide blends, methods of separating mixtures using the membranes including polyimide blends, and the like.

Abstract: Transfer films, articles made therewith, and methods of making and using transfer films to form an electrical stack are disclosed. The transfer films may include a plurality of co-extensive electrical protolayers forming an electrical protolayer stack, at least selected or each electrical protolayer independently comprising at least 25 wt % sacrificial material and a thermally stable material and having a uniform thickness of less than 25 micrometers. The transfer films may include a plurality of co-extensive electrical protolayers forming an electrical protolayer stack, at least selected or each protolayer independently exhibiting a complex viscosity of between 103 and 104 Poise at a shear rate of 100/s when heated to a temperature between its Tg and Tdec.

Abstract: In the method, the first device may transmit to a second device a first initial duration of the first presentation time offset, where the first presentation time offset is a period from data being input to the first device to the data being output from the second device. Besides, the first device may receive, from the second device, the second initial duration of a second presentation time offset, where the second presentation time offset is a period from data being input to the second device to the data being output from the first device. Afterwards, the first device may determine an adjusted duration of the first presentation time offset based on a longer one of the first initial duration and the second initial duration.

Abstract: Embodiments of the present disclosure feature an intrinsically microporous ladder-type Tröger's base polymer including a repeat unit based on a combination of W-shaped CANAL-type and V-shaped Tröger's base building blocks, methods of making the intrinsically microporous ladder-type Tröger's base polymer, and methods of using the intrinsically microporous ladder-type Tröger's base polymer to separate a chemical species from a fluid composition including a mixture of chemical species. Embodiments of the present disclosure further include ladder-type diamine monomers for reacting to form a Tröger's base in situ, and methods of making the ladder-type diamine monomers using catalytic arene-norbornene annulation.

Abstract: A high electron mobility transistor (HEMT) device is provided. The HEMT device includes a substrate layer, a buffer layer, a barrier layer, and a metallic electrode layer sequentially arranged in that order from bottom to top. The metallic electrode layer includes a source electrode, a gate electrode and a drain electrode sequentially arranged in that order from left to right. The barrier layer may include m number of fluorine-doped regions arranged in sequence, where m is a positive integer and m?2. The HEMT device can realize a relative stability of transconductance in a large range of a gate-source-bias through mutual compensation of transconductances in the fluorine-doped regions with different fluorine-ion concentrations of the barrier layer under the gate electrode, and the HEMT device has a good linearity without the need of excessive adjustments of material structure and device.

Abstract: Thin film composite membrane with nano-sized bubbles having enhanced membrane permeability, preparation methods and uses thereof are provided. The method of preparation of a thin film composite membrane, comprising: a) an aqueous solution containing at least an amine, and b) an organic solution containing at least a polyfunctional acyl halide, an additive or soluble gas being present in a) and/or b), or a nano-bubble generator or ultrasound are used to generate nano-bubbles in a) and/or b). Interfacial polymerization of a) and b) occurs at or near the surface of a porous support membrane. The advantage of creating nano-sized bubbles in the separating layer of membrane is that it can reduce membrane resistance without sacrificing the mechanical strength and stability of the membrane so as to improve its water permeability, salt rejection and antifouling. In addition, the process is simple to adopt while performance improvement of the membrane is remarkable.

Abstract: An electrochemically active material includes an active phase that includes silicon, and at least one inactive phase having a Scherrer Grain Size of greater than 5 nanometers. Each inactive phase of the material having a Scherrer Grain Size of greater than 5 nanometers has a lattice mismatch to Li15Si4 of greater than 5%.

Abstract: Embodiments of the present disclosure provide compounds derived by Troger's amine as shown below, microporous structures, membranes, methods of making said compounds, structures, and membranes, methods of use for gas separation, and the like (Formula A1).

Abstract: Embodiments of the present disclosure provide for an ortho (o)-hydroxy-functionalized diamine, a method of making an o-hydroxy-functionalized diamine, an o-hydroxy-functionalized diamine-based polyimide, a method of making an o-hydroxy-functionalized diamine imide, methods of gas separation, and the like.

Abstract: An electrochemically active material includes an active phase that includes silicon, and at least one inactive phase having a Scherrer Grain Size of greater than 5 nanometers. Each inactive phase of the material having a Scherrer Grain Size of greater than 5 nanometers has a lattice mismatch to Li15Si4 of greater than 5%.

Abstract: An electrochemically active material is represented by general formula (I): SiuSnvM1wM2x[P0.2O0.8]y·Az(I) where u, v, w, x, y, and z represent atomic % values and u+v+w+x+y+z=100, M1 includes a metal element or combinations of metal elements selected from Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, B, carbon, or alloys thereof, M2 includes a metal element or combinations of metal elements selected from Mg, Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, or alloys thereof, A is an inactive phase other than a phosphate or silicide, and 0<u<90, 0?v<20, 0<w<50, 0<x<20, 0<y<20, and 0?z<50.

Abstract: An electrochemically active material includes an active phase that includes silicon, and at least one inactive phase having a Scherrer Grain Size of greater than 5 nanometers. Each inactive phase of the material having a Scherrer Grain Size of greater than 5 nanometers has a lattice mismatch to Li15Si4 of greater than 5%.

Abstract: The present disclosure provides a method for characterizing ohmic contact electrode performance of a semiconductor device. The method comprises: preparing two sets of testing patterns on a semiconductor device; testing resistance values of the two sets of testing patterns respectively; calculating a sheet resistance of an ohmic contact area according to the obtained resistance values; and evaluating the ohmic contact electrode performance of the semiconductor device according to the sheet resistance of the ohmic contact electrode.