Abstract: The present disclosure provides for a multi-anhydride, a polyimide, a method of making a dianhydride, a method making a multi-anhydride, a method of making a polyimide, and the like.

Abstract: Embodiments of the present disclosure describe polyimide blend compositions, methods of making polyimide blend compositions, methods of using polyimides, membranes including polyimide blends, methods of making membranes including polyimide blends, methods of separating mixtures using the membranes including polyimide blends, and the like.

Abstract: A negative electrode composition includes a silicon containing material and a crosslinked polymer containing coating surrounding at least a portion of the silicon containing material. The crosslinked polymer containing coating comprises a (co)polymer derived from polymerization of one or more vinylic monomers comprising a carboxyl or carboxylate group.

Abstract: Transfer films, articles made therewith, and methods of making and using transfer films to form an electrical stack are disclosed. The transfer films may include a plurality of co-extensive electrical protolayers forming an electrical protolayer stack, at least selected or each electrical protolayer independently comprising at least 25 wt % sacrificial material and a thermally stable material and having a uniform thickness of less than 25 micrometers. The transfer films may include a plurality of co-extensive electrical protolayers forming an electrical protolayer stack, at least selected or each protolayer independently exhibiting a complex viscosity of between 103 and 104 Poise at a shear rate of 100/s when heated to a temperature between its Tg and Tdec.

Abstract: Transfer films, articles made therewith, and methods of making and using transfer films to form an electrical stack are disclosed. The transfer films (100) may include a plurality of co-extensive electrical protolayers (22, 23, 24) forming an electrical protolayer stack (20), at least selected or each electrical protolayer independently comprising at least 25 wt % sacrificial material and a thermally stable material and having a uniform thickness of less than 25 micrometers. The transfer films may include a plurality of co-extensive electrical protolayers forming an electrical protolayer stack, at least selected or each protolayer independently exhibiting a complex viscosity of between 103 and 104 Poise at a shear rate of 100/s when heated to a temperature between its Tg and Tdec.

Abstract: The present disclosure provides a method for characterizing ohmic contact electrode performance of a semiconductor device. The method comprises: preparing two sets of testing patterns on a semiconductor device; testing resistance values of the two sets of testing patterns respectively; calculating a sheet resistance of an ohmic contact area according to the obtained resistance values; and evaluating the ohmic contact electrode performance of the semiconductor device according to the sheet resistance of the ohmic contact electrode.

Abstract: Embodiments of the present disclosure provide for an ortho (o)-hydroxy-functionalized diamine, a method of making an o-hydroxy-functionalized diamine, an o-hydroxy-functionalized diamine-based polyimide, a method of making an o-hydroxy-functionalized diamine imide, methods of gas separation, and the like.

Abstract: Embodiments of the present disclosure provide compounds derived by Troger's amine as shown below, microporous structures, membranes, methods of making said compounds, structures, and membranes, methods of use for gas separation, and the like (Formula A1).

Abstract: Embodiments of the present disclosure provide for an ortho (o)-hydroxy-functionalized diamine, a method of making an o-hydroxy-functionalized diamine, an o-hydroxy-functionalized diamine-based polyimide, a method of making an o-hydroxy-functionalized diamine imide, methods of gas separation, and the like.

Abstract: An electrochemically active material includes an active phase that includes silicon, and at least one inactive phase having a Scherrer Grain Size of greater than 5 nanometers. Each inactive phase of the material having a Scherrer Grain Size of greater than 5 nanometers has a lattice mismatch to Li15Si4 of greater than 5%.

Abstract: The present disclosure provides for a multi-anhydride, a polyimide, a method of making a dianhydride, a method making a multi-anhydride, a method of making a polyimide, and the like.

Abstract: An electrochemically active material is represented by general formula (I): SiuSnvM1wM2x[P0.2O0.8]y.Az(I) where u, v, w, x, y, and z represent atomic % values and u+v+w+x+y+z=100, M1 includes a metal element or combinations of metal elements selected from Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, B, carbon, or alloys thereof, M2 includes a metal element or combinations of metal elements selected from Mg, Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, or alloys thereof, A is an inactive phase other than a phosphate or silicide, and 0<u<90, 0?v<20, 0<w<50, 0<x<20, 0<y<20, and 0?z<50.

Abstract: Embodiments of the present disclosure provide for an aromatic dianhydride, a method of making an aromatic dianhydride, an aromatic dianhydride-based polyimide, a method of making an aromatic dianhydride-based polyimide, and the like.

Abstract: Transfer films, articles made therewith, and methods of making and using transfer films to form an electrical stack are disclosed. The transfer films (100) may include a plurality of co-extensive electrical protolayers (22, 23, 24) forming an electrical protolayer stack (20), at least selected or each electrical protolayer independently comprising at least 25 wt % sacrificial material and a thermally stable material and having a uniform thickness of less than 25 micrometers. The transfer films may include a plurality of co-extensive electrical protolayers forming an electrical protolayer stack, at least selected or each protolayer independently exhibiting a complex viscosity of between 103 and 104 Poise at a shear rate of 100/s when heated to a temperature between its Tg and Tdec.

Abstract: Embodiments of the present disclosure provide for an ortho (o)-hydroxy-functionalized diamine, a method of making an o-hydroxy-functionalized diamine, an o-hydroxy-functionalized diamine-based polyimide, a method of making an o-hydroxy-functionalized diamine imide, methods of gas separation, and the like.

Abstract: The present invention relates to state transition, especially relates to method and means for state transition of Ethernet linear protection switching. It is provided a method of state transition for a local end of a protection group of Ethernet linear protection switching in a local network element, and the method comprises receiving a first message configured to change the state of the local end with a first state, the first message being overridden by the first state; receiving a second message configured to change the state of the local end; determining a second state of the local end on the basis of the first message and the second message; and changing the state of the local end into the second state. In this way, there will be no unnecessary state transition and then no traffic loss caused by the unnecessary state transition.

Abstract: Embodiments of the present disclosure provide for an aromatic dianhydride, a method of making an aromatic dianhydride, an aromatic dianhydride-based polyimide, a method of making an aromatic dianhydride-based polyimide, and the like.

Abstract: A UV LED device and the method for fabricating the same are provided. The device has aluminum nitride nucleating layers, an intrinsic aluminum gallium nitride epitaxial layer, an n-type aluminum gallium nitride barrier layer, an active region, a first p-type aluminum gallium nitride barrier layer, a second p-type aluminum gallium nitride barrier layer, and a p-type gallium nitride cap layer arranged from bottom to top on a substrate. A window region is etched in the p-type gallium nitride cap layer for emitting the light generated.

Abstract: The present invention relates to state transition, especially relates to method and means for state transition of Ethernet linear protection switching. It is provided a method of state transition for a local end of a protection group of Ethernet linear protection switching in a local network element, and the method comprises receiving a first message configured to change the state of the local end with a first state, the first message being overridden by the first state; receiving a second message configured to change the state of the local end; determining a second state of the local end on the basis of the first message and the second message; and changing the state of the local end into the second state. In this way, there will be no unnecessary state transition and then no traffic loss caused by the unnecessary state transition.