Abstract: A system for multi-channel data acquisition and precision irrigation and fertilizer application control of crops involving the following steps: obtaining a soil moisture content and a plant status parameter for plants within each homogeneous area; calculating a required soil moisture content for plants within the homogeneous area based on a difference between the required soil moisture content for plants within the planting area and the soil moisture content for plants within the homogeneous area; obtaining types and quality of required fertilizers for plants within the homogeneous area based on the plant status parameter for plants within the homogeneous area; blending an irrigation water and fertilizer solution required by plants within the homogeneous area; and irrigating plants within each homogeneous area according to the irrigation water and fertilizer solution required by plants within the homogeneous area.

Abstract: Disclosed is a straw crushing device capable of driving a sharpening structure, relating to the field of straw crushing. The straw crushing device includes a main housing, the main housing is internally provided with a crushing chamber and a suction chamber, a feeding nozzle is installed outside the main housing, and the feeding nozzle communicates with a feeding end of the crushing chamber. A spline transmission shaft is installed inside the main housing, and penetrates through the crushing chamber and the suction chamber. A driving motor is installed outside the main housing, and the driving motor is connected to the spline transmission shaft. A Y-shaped tool rest is installed on the spline transmission shaft, and the Y-shaped tool rest is located in the crushing chamber.

Abstract: Methods, systems, and devices for wireless communications are described. In some examples, a first UE may receive an indication of first resources from a second UE. In some examples, the second UE may be a UE configured to receive a transmission from a third UE over the first resources. In some such examples, the first UE may transmit, to a fourth UE, a sidelink transmission over available resources that exclude the first resources. Additionally, or alternatively, the second UE may be a UE that received sidelink control information from the third UE indicating the resources for transmission by the third UE to a fourth UE. In some such examples, the first UE may transmit, to the second UE, a sidelink transmission over available resources that exclude the first resources.

Abstract: A method of wireless communication at a device that supports energy harvesting is disclosed herein. The method includes obtaining, via at least one energy harvesting operation, energy from a wireless transmission. The method further includes transmitting, for a network node, an indication of power consumption of the device for at least one of wireless communications or sensing at the device.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may transmit, for one or more nodes, capability information regarding a beam tracking capability of a backscattering radio of the UE. The UE may perform beam tracking in accordance with the beam tracking capability. The UE may transmit, for the one or more nodes, beam information based at least in part on the beam tracking. Numerous other aspects are described.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a controller user equipment (UE) may transmit, to a network node, a relay scheduling request that indicates a request to schedule access to a universal mobile telecommunications system air interface (Uu) based at least in part on relaying one or more sidelink retransmissions associated with at least a first sidelink between the controller UE and a first sidelink UE. The UE may communicate the one or more sidelink retransmissions between the controller UE and the network node based at least in part on using the Uu. Numerous other aspects are described.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a backscattering radio may transmit capability information relating to at least one of a polarization conversion capability of the backscattering radio or a backscattering modulation capability of the backscattering radio. The backscattering radio may communicate with a network node in accordance with the capability information. Numerous other aspects are described.

Abstract: Aspects of the disclosure are directed to an apparatus configured for wireless communication. The apparatus may include any wireless communication device configured for radio frequency identification (RFID) communications. In some examples, the apparatus includes a memory comprising instructions, and one or more processors configured to execute the instructions. In some examples, the one or more processors are configured to cause the apparatus to obtain a first signal from a radio frequency identifier (RFID) device. In some examples, the one or more processors are configured to cause the apparatus to output, for transmission to the RFID device in response to the first signal, a first backscatter signal configured to indicate a beamforming capability of the apparatus.

Abstract: A user equipment may be configured to perform active interference cancellation for random-access channel. In some aspects, the user equipment may receive, from a base station, physical layer random-access channel (PRACH) configuration information including one or more active interference cancellation (AIC) parameters for applying AIC to a PRACH message to the base station. Further, the user equipment may transmit, to the base station, the PRACH message with one or more AIC subcarriers based on the one or more AIC parameters.

Abstract: A semiconductor structure includes a substrate and a stack structure located on the substrate. The stack structure includes a plurality of memory units arranged at intervals in a first direction. Each memory unit includes a transistor structure. The transistor structure includes an active structure and a gate layer. At least part of the active structure is distributed around a periphery of part of the gate layer, and the projection of the active structure on a top surface of the substrate is in the shape of a U which opens toward a second direction. Both the first direction and the second direction are parallel to the top surface of the substrate, and the first direction intersects with the second direction. A method for forming the semiconductor structure is also provided.

Abstract: A base substrate and a first metal layer laminated on the base substrate are included. A first laminated portion and a second laminated portion are arranged on and directly contact a side of the first metal layer. The first laminated portion includes a first insulating layer, a second metal layer, a second insulating layer and a first conductive layer. The first laminated portion is arranged with a first via. The second laminated portion includes a third insulating layer and a second conductive layer laminated on the third insulating layer. The second laminated portion is arranged with a second via. The first via is connected to the first conductive layer, the second via is connected to the second conductive layer, and the first conductive layer is connected to the second conductive layer. The second laminated portion is extended to reach an edge of the first metal layer.

Abstract: This disclosure provides systems, devices, apparatus, and methods, including computer programs encoded on storage media, for a sidelink coverage extension using repeated transmission. A first UE may transmit a multiple slot SCI in a first slot of a group of multiple slots for reserving resources for the group of multiple slots and transmitting one or more sidelink transmissions in the reserved resources. A second UE may receive the multiple slot SCI in the first slot of the group of multiple slots for receiving the one or more sidelink transmissions in the reserved resources for the group of multiple slots. In aspects, a base station may receive configuration parameters for the multiple slot SCI and configure one or more UEs with a multiple slot configuration, based on the configuration parameters, for transmitting/receiving the multiple slot SCI associated with the reserved resources in the group of multiple slots.

Abstract: A method for forming a semiconductor structure includes: a base is provided, the base including a first area and a second area located outside the first area, the first area including stack structures and first isolation structures arranged alternately in a first direction, each stack structure including first semiconductor layers and second semiconductor layers stacked onto one another alternately in a third direction, the first direction being a direction in a plane where the base is located, the third direction intersecting with the plane where the base is located; the first semiconductor layers located in the first area, and the first isolation structures located in the first area and located in projection areas of the first semiconductor layers in the first direction are successively removed, to form active dummy connection layers extending in the first direction; and gate structures are formed on surfaces of the active dummy connection layers.

Abstract: Embodiments relate to a method for fabricating a semiconductor structure and a semiconductor structure. The method includes: providing a substrate, and forming an initial stack structure on the substrate, where the initial stack structure includes a first dielectric layer and a target semiconductor layer alternately stacked in sequence along a first direction adjacent to the substrate; forming, in the initial stack structure, a first trench isolation structure, a second trench isolation structure and a third trench isolation structure arranged at intervals along a second direction and extending along a third direction; forming two spaced gate trenches whose bottom surfaces contact an upper surface of the substrate, where a part of the target semiconductor layer positioned in the gate trench is exposed and suspended; and forming gate structures surrounding the target semiconductor layer in the gate trenches.

Abstract: A signal processing method includes: obtaining first indication information, where the first indication information includes a measurement parameter; performing, by a signal forwarding device based on the measurement parameter, signal quality measurement on a received first uplink signal sent by a target user terminal UE; sending a signal quality measurement result to a base station; if obtaining second indication information sent by the base station, receiving a second uplink signal sent by the target UE, and forwarding the second uplink signal to the base station, where the second indication information is sent by the base station to the signal forwarding device, after the base station determines, based on the signal quality measurement result, to determine to allocate the target UE to the signal forwarding device as subordinate UE.

Abstract: The semiconductor structure forming method includes: providing a base, where the base includes a substrate, a plurality of first semiconductor layers and second semiconductor layers; forming a first sidewall and a second sidewall, each including a support layer and an isolation layer formed on a side of the support layer; forming a plurality of recessed portions separated by the first sidewall, the second sidewall, and the second semiconductor layers, where the recessed portions extend in a horizontal direction and are stacked in a vertical direction; forming a first conductive layer and a filling layer in each recessed portion; removing isolation layers located on a side of the first sidewall that is away from the second sidewall and on a side of the second sidewall that is away from the first sidewall; and removing the first conductive layer located at a bottom of each recessed portion.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes: a plurality of word lines extending along a first direction and arranged at intervals along a third direction; a plurality of semiconductor channels extending along a second direction and arranged at intervals along the third direction, wherein the word line surrounds the semiconductor channel along the third direction; a stepped structure including a plurality of steps, wherein the step is in contact with and connected to the word line, a height of a top surface of any one of the steps is different from a height of a top surface of another one of the steps along the third direction, the steps are arranged in an array along the first direction and the second direction; and a plurality of contact structures, wherein the contact structure is in contact with and connected to the step.

Abstract: A method includes: providing a substrate including a first region and a second region; a stacked structure being formed on the substrate, the stacked structure including a first semiconductor layers and a second semiconductor layers stacked alternately in sequence along a direction perpendicular to a plane where the substrate is located; etching the stacked structure, such that the first semiconductor layers and the second semiconductor layers located in the second region respectively form a first sub-part extending in a first direction and a third sub-part extending in the first direction; the first semiconductor layers and the second semiconductor layers remaining in the first region respectively constitute a second sub-part extending in a second direction and a fourth sub-part extending in the second direction; removing the third sub-part; and forming a first dielectric layer at least filling a gap between two adjacent ones of the first sub-parts.

Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure comprises a substrate on which a stacked structure is provided, the stacked structure comprising a plurality of memory cell groups arranged in a first direction, each of the memory cell groups comprising multiple layers of memory cells arranged in a second direction; and a plurality of leading wire posts, wherein at least two leading wire posts are respectively in contact with the memory cells of different layers in different memory cell groups.

Abstract: A semiconductor structure comprises a substrate, wherein the substrate is provided with a stacked structure, the stacked structure comprising a plurality of memory cell groups arranged in a first direction, each of the memory cell groups comprising multiple layers of memory cells arranged in a second direction, the stacked structure further comprising a plurality of horizontal signal lines arranged in the second direction, wherein each of the horizontal signal lines is in contact with one layer of the memory cells; and a plurality of leading wire posts arranged in the first direction, wherein the plurality of leading wire posts and the plurality of horizontal signal lines are arranged along a third direction, and the leading wire posts are connected to the horizontal signal lines.