Abstract: The present disclosure provides a topic recommendation method and apparatus, a computer device, and a storage medium, and the method includes: in response to satisfying a preset display condition, determining a target book to be displayed under the preset display condition; acquiring a target recommended topic matching the target book; and displaying recommended books and the target recommended topic according to a display manner matching the preset display condition, in which the recommended books at least include the target book.

Abstract: Provided are a method for preparing a semiconductor structure, a semiconductor structure and a semiconductor memory. The method includes the following operations. An initial semiconductor structure is formed on a substrate. The initial semiconductor structure is etched to form an array area structure and a peripheral area structure including a peripheral area gate structure. An isolation wall surrounding the peripheral area gate structure is formed on the substrate where the peripheral area structure locates. A second dielectric layer is deposited on the peripheral area gate structure including the isolation wall and on the array area structure. The second dielectric layer, the first dielectric layer and the isolation wall are etched to form the semiconductor structure with a flat surface.

Abstract: A manufacturing method of a semiconductor structure includes the following operations. A substrate is provided, which includes a first N region, a first P region, a second N region and a second P region adjacently arranged in sequence. A gate dielectric layer, a first barrier layer, a first work function layer and a second barrier layer are formed on the substrate in sequence. A mask layer is formed on the second barrier layer of the first P region and the second P region. The second barrier layer of the first N region and the second N region is removed by a first etching process with the mask layer as a mask. The first work function layer and the first barrier layer of the first N region and the second N region are removed by a second etching process. A semiconductor structure is also provided.

Abstract: Provided are a semiconductor structure and a method of manufacturing the same. The method of manufacturing a semiconductor structure includes the following steps: a substrate and a stacked structure located on the substrate are provided, the stacked structure including first insulating layers and semiconductor layers alternately stacked along the vertical direction, and the stacked structure having a first region; parts of the stacked structure in the first region are etched to form multiple first trenches arranged at intervals and multiple first staircase regions located between the first trenches; second insulating layers are formed in the first trenches; the stacked structure in the multiple first staircase regions is etched along the vertical direction to form a first staircase structure; conductive layers are formed at the top of the first staircase structure; and the semiconductor layers under the conductive layers are removed.

Abstract: A data storage method includes deploying a data storage service system including two nodes on a wheeled mobile device, where the wheeled mobile device is an intelligent vehicle, an autonomous vehicle, or a connected vehicle; running a first process on a first node; running a second process on a second node, where the first node is a primary node and the second node is a secondary node; invoking, by the first node, a first database engine using the first process to write data to a first storage module on the first node when the first node receives a data write request; and enabling by the first node, in a blocking mode, the second node to invoke a second database engine using the second process to perform a same data write operation on a second storage module on the second node.

Abstract: The present disclosure discloses a semiconductor structure and a method for fabricating the semiconductor structure. The semiconductor structure includes a plurality of word lines and a plurality of bit lines; ladder structure, including multiple steps, each step includes a first part which extends along the first direction, and a second part which extends along the second direction; a plurality of electrical contact structures, the electrical contact structures is disposed on the top surfaces of a portion of the first part and the second part of the steps, and the electrical contact structures are electrically connected to the word lines or bit lines.

Abstract: A video generation method and apparatus, a computer device, and a storage medium are provided in the present disclosure. The method includes: displaying a video creation page in response to a request to generate a recommendation video for a target book list, the video creation page including editing instructions respectively corresponding to video forming dimensions, and the editing instructions being used to guide to add target video materials in the video forming dimensions; and in response to receiving the target video materials in the video forming dimensions, integrating the target video materials by using a target video script, to generate the recommendation video corresponding to the target book list, the target video script indicating a target video frame associated with a video forming dimension in the recommendation video, and a display position of a target video material corresponding to the video forming dimension in the target video frame.

Abstract: A video generating method includes acquiring video materials from an initial collection which comprises user-related videos, acquiring a target audio material serving as background music, performing image feature extraction on video frames of each video material, and performing segmentation processing according to image feature information corresponding to each video frame to acquire a target video segment corresponding to the video material, and merging the target video segment and the corresponding target audio material to generate a target video. The target video includes video segments which are obtained based on the target video segments respectively, the video segments in the target video are played in order of post time, and time lengths of the video segments are matched with time lengths of corresponding musical phrases in the target audio material.

Abstract: The present disclosure describes techniques for social networking based on collecting asset items. Features may be extracted from an image comprising an object and captured by a camera. The object may be associated with a location. The location may be determined based on information indicating a position where the camera is located. The object may be recognized based at least in part on the features extracted from the image. An asset item may be displayed in response to recognizing the object.

Abstract: The present disclosure describes techniques for social networking based on collecting asset items. Features may be extracted from an image comprising an object and captured by a camera. The object may be associated with a location. The location may be determined based on information indicating a position where the camera is located. The object may be recognized based at least in part on the features extracted from the image. An asset item may be displayed in response to recognizing the object.

Abstract: The present disclosure provides a display method, apparatus, computer device and storage medium, wherein the method comprises: in response to a trigger operation for any of book recommendation topics, acquiring a plurality of topic posts under the book recommendation topic, and target filtering items matching the topic posts; wherein the target filtering items are determined based on book recommendation information of the topic posts and book information recommended in the topic posts; displaying the target filtering items; and in response to one of the target filtering items being selected, displaying topic posts associated with the one of the target filtering items.

Abstract: Embodiments of the present disclosure provide a semiconductor device, comprising a semiconductor layer, extending along the first direction; the semiconductor layer includes a capacitor area facing the capacitor structure, and the capacitor structure includes: a lower electrode layer, the capacitor dielectric layer and the upper electrode layer, sequentially surrounding the sidewalls of the capacitor area extending along the first direction, a part of the lower electrode layer surrounds the sidewalls of the capacitor region, and also surrounds the bottom of the upper electrode layer, the sidewalls extending along the first direction, and the capacitor dielectric layer is located between the upper electrode layer and the lower electrode layer. The disclosed device improves the capacitance of the capacitor structure while improving the integration density of the semiconductor structure.

Abstract: The present disclosure provides a book page display method and apparatus, a computer device, and a storage medium, wherein the method comprises: in response to a trigger operation on a first book, displaying a book page of the first book; displaying, in the book page, a target topic matched with the first book; wherein at least one of the topic information of the target topic or a second book included in the target topic is matched with the first book.

Abstract: Method for manufacturing a semiconductor device includes: forming a first area and a second area of a peripheral area on a substrate; forming a first lamination structure in the first area, and forming a second lamination structure in an array area and the second area; performing thermal treatment on the substrate so that atoms in a work function layer are diffused into a second dielectric layer, and an interface interaction occurs between the second dielectric layer and a first dielectric layer; removing the first lamination structure to the second dielectric layer, and removing the second lamination structure to the second dielectric layer; forming a fourth barrier layer and a second conductive layer, a content ratio of metallic element to non-metallic element in a first barrier layer being less than a content ratio of metallic element to non-metallic element in a second barrier layer and a third barrier layer.

Abstract: A system for multi-channel data acquisition and precision irrigation and fertilizer application control of crops involving the following steps: obtaining a soil moisture content and a plant status parameter for plants within each homogeneous area; calculating a required soil moisture content for plants within the homogeneous area based on a difference between the required soil moisture content for plants within the planting area and the soil moisture content for plants within the homogeneous area; obtaining types and quality of required fertilizers for plants within the homogeneous area based on the plant status parameter for plants within the homogeneous area; blending an irrigation water and fertilizer solution required by plants within the homogeneous area; and irrigating plants within each homogeneous area according to the irrigation water and fertilizer solution required by plants within the homogeneous area.

Abstract: Disclosed is a straw crushing device capable of driving a sharpening structure, relating to the field of straw crushing. The straw crushing device includes a main housing, the main housing is internally provided with a crushing chamber and a suction chamber, a feeding nozzle is installed outside the main housing, and the feeding nozzle communicates with a feeding end of the crushing chamber. A spline transmission shaft is installed inside the main housing, and penetrates through the crushing chamber and the suction chamber. A driving motor is installed outside the main housing, and the driving motor is connected to the spline transmission shaft. A Y-shaped tool rest is installed on the spline transmission shaft, and the Y-shaped tool rest is located in the crushing chamber.

Abstract: A semiconductor structure includes a substrate and a stack structure located on the substrate. The stack structure includes a plurality of memory units arranged at intervals in a first direction. Each memory unit includes a transistor structure. The transistor structure includes an active structure and a gate layer. At least part of the active structure is distributed around a periphery of part of the gate layer, and the projection of the active structure on a top surface of the substrate is in the shape of a U which opens toward a second direction. Both the first direction and the second direction are parallel to the top surface of the substrate, and the first direction intersects with the second direction. A method for forming the semiconductor structure is also provided.

Abstract: A method for forming a semiconductor structure includes: a base is provided, the base including a first area and a second area located outside the first area, the first area including stack structures and first isolation structures arranged alternately in a first direction, each stack structure including first semiconductor layers and second semiconductor layers stacked onto one another alternately in a third direction, the first direction being a direction in a plane where the base is located, the third direction intersecting with the plane where the base is located; the first semiconductor layers located in the first area, and the first isolation structures located in the first area and located in projection areas of the first semiconductor layers in the first direction are successively removed, to form active dummy connection layers extending in the first direction; and gate structures are formed on surfaces of the active dummy connection layers.

Abstract: Embodiments relate to a method for fabricating a semiconductor structure and a semiconductor structure. The method includes: providing a substrate, and forming an initial stack structure on the substrate, where the initial stack structure includes a first dielectric layer and a target semiconductor layer alternately stacked in sequence along a first direction adjacent to the substrate; forming, in the initial stack structure, a first trench isolation structure, a second trench isolation structure and a third trench isolation structure arranged at intervals along a second direction and extending along a third direction; forming two spaced gate trenches whose bottom surfaces contact an upper surface of the substrate, where a part of the target semiconductor layer positioned in the gate trench is exposed and suspended; and forming gate structures surrounding the target semiconductor layer in the gate trenches.

Abstract: A signal processing method includes: obtaining first indication information, where the first indication information includes a measurement parameter; performing, by a signal forwarding device based on the measurement parameter, signal quality measurement on a received first uplink signal sent by a target user terminal UE; sending a signal quality measurement result to a base station; if obtaining second indication information sent by the base station, receiving a second uplink signal sent by the target UE, and forwarding the second uplink signal to the base station, where the second indication information is sent by the base station to the signal forwarding device, after the base station determines, based on the signal quality measurement result, to determine to allocate the target UE to the signal forwarding device as subordinate UE.