Abstract: The present invention discloses a device and method for collecting heat bags and solidifying and filling calcareous sand foundation, belonging to the field of civil engineering geological treatment technology. The solar heat collection bag comprises a transparent and permeable part and an insulation material, wherein the insulation material comprises a heat absorbing layer, an insulation layer, and a fabric layer. The heat absorbing layer, insulation layer, and fabric layer are fixedly combined from top to bottom to form an integrated transparent and permeable part. The edge of the transparent and permeable part is the first edge, and the edge of the insulation material is the second edge; The transparent heat permeable part and insulation material are combined into one through the first and second edges, forming a containment space between the transparent heat permeable part and the insulation material, so that the medium contained in the containment space can be heated by solar energy.

Abstract: The disclosure relates to a multi-probe NMR rock soil in-situ monitoring method, which includes: placing a multi-probe component to a target layer in a soil drill hole, where the multi-probe component includes NMR probes respectively located at the soils at different depths and having different measurement frequencies; performing in-situ NMR measurement on soils at different depths at the same time; by using a spectrometer component, receiving measurement signals from all NMR probes and performing frequency mapping analysis to distinguish NMR raw measurement data collected by each NMR probe; by using the spectrometer component, transmitting the raw measurement data to an industrial control computer to perform an inversion processing on the measurement data of the NMR probes and obtain T2 distribution mapping of the soils at different positions; based on the T2 distribution mapping, obtaining a water ratio of soil, a soil-water characteristics curve, soil non-homogeneity information and oil pollutant informati

Abstract: A method is provided that includes: obtaining a list of browsed information of each of a plurality of first users and a first vector corresponding to each list of browsed information; clustering the first vectors to obtain one or more vector clusters and a center vector of each vector cluster; determining one or more information clusters respectively corresponding to the one or more vector clusters; obtaining a list of browsed information of a second user in response to a browsing request of the second user; determining, in response to determining that the list of browsed information of the second user is not void, a second vector corresponding to the list of browsed information of the second user; calculating a similarity between the second vector and each center vector, to determine an information cluster matched with the second vector; and providing recommendations for the second user based on the information cluster.

Abstract: The present invention provides a testing device and method for interface mechanical parameters of natural gas hydrated soil. The interface mechanical parameter testing device for natural gas hydrated soil includes a reaction kettle, a rotating power mechanism, a sample loading mechanism, a pressure mechanism, an atmosphere regulating mechanism, and a temperature regulating mechanism. The testing method for interface mechanical parameters of hydrated soil containing natural gas is implemented based on this device. It can improve the accuracy and reliability of mechanical parameters at the interface of hydrated soil containing natural gas.

Abstract: This application provides an integrated circuit device and a preparation method thereof, and relates to the field of semiconductor technologies. An isolation section for suppressing a leakage current path of two adjacent transistors may be formed by using a simple process. The integrated circuit device includes a substrate and a fin protruding from the substrate. The integrated circuit device further includes two adjacent transistors. The two adjacent transistors use two spaced segments on the fin as respective channels of the two adjacent transistors. A part that is of the fin and that is located between the two spaced segments is processed to obtain an isolation section. The isolation section is used to suppress current transfer between the two channels of the two adjacent transistors.

Abstract: This application provides a stirring impeller type washing machine including a washing machine body, a washing assembly, and a water level assembly. The washing assembly includes a mode switch and a program controller connected to each other, the program controller has at least two switching positions, each corresponding to a working mode, different rotation orientations of the mode switch correspond to different working modes of the stirring impeller type washing machine. The water level assembly includes a water level sensor, an encoder connected to the water level sensor, and a water level switch and a water injection controller connected to the encoder, wherein a preset water level is adjustable through different rotation orientations of the water level switch. With the stirring impeller type washing machine, the operation and the control become more convenient and sensitive, and the washing degree is higher.

Abstract: A metal matrix composite material and associated methods are disclosed. In one example, the metal matrix composite material includes ceramic particles distributed in multiple phases. In selected examples, the metal matrix composite material is formed by a process including applying a rotational force and an axial force to a feedstock at an interface and plasticizing a portion of the feedstock at the interface.

Abstract: The fuel cell control system includes: a reactor; an air compressor, wherein the air compressor has a compressing cavity, the compressing cavity has a gas inlet and a gas outlet, a rotatable pressure wheel is disposed inside the compressing cavity, and the gas outlet is in communication with the reactor; a control flow channel, wherein a first end of the control flow channel is in communication with the gas-intake side of the pressure wheel, a second end of the control flow channel is in communication with the wheel-back side of the pressure wheel, and the control flow channel is provided with a return valve for regulating the flow rate of the control flow channel; and a central control unit, wherein the central control unit is communicatively connected to the return valve to control the opening degree of the return valve.

Abstract: The disclosure discloses a solid fluidization tubular separator for marine natural gas hydrate, which includes a first separator and a second separator, wherein the first separator includes the first separation sleeve, the power liquid pipe, the swirl baffle, the recovery mechanism and the sand discharge mechanism. After the hydrate is sucked into the first separation sleeve to generate a circumferential velocity, so that the mud and sand with high density are separated to the pipe wall of the first separation sleeve, and the mud and sand separated to the pipe wall are settled down from the gap between the swirl baffle and the pipe wall along the pipe wall. The hydrate swirl flows into the recovery mechanism, and then leaves the first separation sleeve and enters the second separator, so as to realize the separation of mud and sand and natural gas hydrate.

Abstract: An embodiment of the invention provides a fabrication method of a field-effect transistor. The method includes: forming a support structure with a superlattice feature on a semiconductor substrate, where the support structure includes a first semiconductor material layer and a second semiconductor material layer that are alternately disposed, and an isolation layer is disposed on two sides of the support structure; forming, along a boundary between the isolation layer and the support structure, a dummy gate structure that covers the support structure, where a length of the dummy gate structure in a gate length direction is less than the first semiconductor material layer; removing, along the gate length direction, an area other than a sacrificial layer in the first semiconductor material layer to form an insulation groove; and forming a source and a drain in a preset source drain area along the gate length direction.

Abstract: The fuel cell control system includes: a reactor; an air compressor, wherein the air compressor has a compressing cavity, the compressing cavity has a gas inlet and a gas outlet, a rotatable pressure wheel is disposed inside the compressing cavity, and the gas outlet is in communication with the reactor; a control flow channel, wherein a first end of the control flow channel is in communication with the gas-intake side of the pressure wheel, a second end of the control flow channel is in communication with the wheel-back side of the pressure wheel, and the control flow channel is provided with a return valve for regulating the flow rate of the control flow channel; and a central control unit, wherein the central control unit is communicatively connected to the return valve to control the opening degree of the return valve.

Abstract: An embodiment of the invention provides a fabrication method of a field-effect transistor. The method includes: forming a support structure with a superlattice feature on a semiconductor substrate, where the support structure includes a first semiconductor material layer and a second semiconductor material layer that are alternately disposed, and an isolation layer is disposed on two sides of the support structure; forming, along a boundary between the isolation layer and the support structure, a dummy gate structure that covers the support structure, where a length of the dummy gate structure in a gate length direction is less than the first semiconductor material layer; removing, along the gate length direction, an area other than a sacrificial layer in the first semiconductor material layer to form an insulation groove; and forming a source and a drain in a preset source drain area along the gate length direction.

Abstract: PatDNN is an end-to-end framework to achieve real-time DNN execution on mobile devices. PatDNN includes two stages: a pattern-based pruning stage based on extended ADMM solution framework, and an optimized execution code generation stage including a high-level, fine-grained DNN layerwise representation and a set of architecture-aware optimizations. This design allows PatDNN to benefit from both high accuracy and hardware efficiency.

Abstract: A computer-implemented method is disclosed for compressing a deep neural network (DNN) model by DNN weight pruning to accelerate DNN inference on mobile devices. The method includes the steps of (a) performing an intra-convolution kernel pruning of the DNN model wherein a fixed number of weights are pruned in each convolution kernel of the DNN model to generate sparse convolution patterns; (b) performing inter-convolution kernel pruning of the DNN model to generate connectivity sparsity, wherein inter-convolution kernel pruning comprises cutting connections between given input and output channels of the DNN model to remove corresponding kernels; and (c) training the DNN model compressed in steps (a) and (b).

Abstract: This application provides an integrated circuit device and a preparation method thereof, and relates to the field of semiconductor technologies. An isolation section for suppressing a leakage current path of two adjacent transistors may be formed by using a simple process. The integrated circuit device includes a substrate and a fin protruding from the substrate. The integrated circuit device further includes two adjacent transistors. The two adjacent transistors use two spaced segments on the fin as respective channels of the two adjacent transistors. Apart that is of the fin and that is located between the two spaced segments is processed to obtain an isolation section. The isolation section is used to suppress current transfer between the two channels of the two adjacent transistors.

Abstract: The invention provides a fabrication method of a field-effect transistor. The method includes: forming a support structure with a superlattice feature on a semiconductor substrate, where the support structure includes a first semiconductor material layer and a second semiconductor material layer that are alternately disposed, and an isolation layer is disposed on two sides of the support structure; forming, along a boundary between the isolation layer and the support structure, a dummy gate structure that covers the support structure, where a length of the dummy gate structure in a gate length direction is less than the first semiconductor material layer; removing, along the gate length direction, an area other than a sacrificial layer in the first semiconductor material layer to form an insulation groove,; and forming a source and a drain in a preset source drain area along the gate length direction.

Abstract: A liquid crystal material for a liquid crystal display panel is used to form a polymer film on a substrate on which no PI layer is provided so as to realize normal display of the liquid crystal panel. Meanwhile, realiability of the panel can be improved, a voltage holding rate can be improved, and poor alignment of the self-alignment liquid crystal material, afterimage, and other problems can be solved.

Abstract: The invention provides a fabrication method of a field-effect transistor. The method includes: forming a support structure with a superlattice feature on a semiconductor substrate, where the support structure includes a first semiconductor material layer and a second semiconductor material layer that are alternately disposed, and an isolation layer is disposed on two sides of the support structure; forming, along a boundary between the isolation layer and the support structure, a dummy gate structure that covers the support structure, where a length of the dummy gate structure in a gate length direction is less than the first semiconductor material layer; removing, along the gate length direction, an area other than a sacrificial layer in the first semiconductor material layer to form an insulation groove,; and forming a source and a drain in a preset source drain area along the gate length direction.

Abstract: A liquid crystal panel and a method of fabricating the same are described. For the liquid crystal panel, an optical alignment treatment is performed to irradiate a polarized ultraviolet light to an optical alignment layer in advance. Thus, when a polymerizing step is performed, tilting directions of the liquid crystal molecules can be made uniform, thereby solving the problem of reducing an optical transmittance existing in the conventional technology.

Abstract: A liquid crystal material, a liquid crystal display panel, and a method for manufacturing the liquid crystal display panel are disclosed. A liquid crystal material is used to form a polymer film on a substrate on which no PI layer is provided so as to realize normal display of the liquid crystal panel. Meanwhile, realiability of the panel can be improved, a voltage holding rate can be improved, and poor alignment of the self-alignment liquid crystal material, afterimage, and other problems can be solved.