Abstract: Provided is an interfering RNA targeting Janus kinase 1 (JAK1). The interfering RNA can reduce the expression of JAK1 and further inhibit the activation of a JAK/STAT signaling pathway, thereby achieving the purpose of treating a JAK/STAT signaling pathway dysregulation-associated disease. Further provided is a lipid nanoparticle drug containing the interfering RNA for use in treating a JAK/STAT signaling pathway dysregulation-associated disease. Further provided is an antibody-nucleic acid drug conjugate containing the interfering RNA for use in treating a JAK/STAT signaling pathway dysregulation-associated disease.

Abstract: The present invention provides an interfering RNA targeting TOP1 gene. The interfering RNA can reduce the expression of TOP1, thereby treating a disease related to TOP1 expression. The present invention further provides a lipid nanoparticle drug comprising the interfering RNA for treating a disease related to TOP1 expression. The present invention further provides an antibody-nucleic acid conjugate drug comprising the interfering RNA for treating a disease related to TOP1 expression.

Abstract: A fixed bed reactor based on the principle of thermoelectric to achieve in-situ heat removal and in-situ temperature measurement for strong exothermic reactions involves the field of fixed bed devices for heat reuse of exothermic reactions. Specifically, it relates to the field of fixed bed devices based on the principle of thermoelectric for timely heat removal of strong exothermic reactions, and can also measure and monitor the temperature and heat of exothermic reactions from multiple angles, enhancing the heat transfer of the catalytic bed layer, effectively eliminating or reducing the generation of reaction hotspots, and avoiding catalyst deactivation. The utility model comprises a fixed bed reaction tube, and the top of the fixed bed reaction tube is equipped with an infrared temperature measurement system, a potential detection system, and an electric energy collection system.

Abstract: A target wafer repairing apparatus is provided. The target wafer repairing apparatus includes a chamber configured to load a target wafer, and a particle beam source configured to emit one or more beamlets to irradiate a repair region of the target wafer. The repairing apparatus further includes at least one gas inlet configured to inject a precursor gas to the repair region of the target wafer to repair defects in the repair region of the target wafer.

Abstract: A detection system includes a first electron source configured to generate a first electron beam and to cause the first electron beam to impinge on a sample, a second electron source configured to generate a second electron beam and to cause the second electron beam to impinge on the sample, a detector, and a control system. The control system is configured to control the first electron source to cause the first electron beam to scan an area of the sample, control a charge state of the sample by varying at least one of a landing energy and a beam current of the second electron beam, control the detector to detect electrons emitted by the sample, receive a detector signal from the detector, and generate a voltage contrast image from the detector signal.

Abstract: An embodiment corresponds to an inspection apparatus that includes an electron beam source configured to emit an electron beam, and an objective lens set configured to project, based on the electron beam, an electron beamlet onto a target area. The inspection apparatus further includes a detector between the objective lens set and the target area and configured to detect backscattered electrons beamlets from the target area. The detector includes a substrate having an opening through which the electron beamlet passes, a plurality of sensing cells disposed on the substrate and surrounding the opening. Each sensing cell of the plurality of sensing cells has a normal direction tilted with respect to a normal direction of the substrate.

Abstract: An electron detector includes a detector body having a detector surface with an annular geometry and a central aperture configured to allow a focused electron beam to pass through the detector body toward a sample. The detector surface is configured to face the sample, and a plurality of detector devices are located on the detector surface. Each of the plurality of detector devices is configured to generate an electrical signal in response to interaction with an electron backscattered from the sample. According to various embodiments, the plurality of detector devices includes at least a first two detector devices separated from one another along a radial direction along the detector surface and at least a second two detector devices separated from one another along an angular direction along the detector surface. The detector devices are configured to determine both a polar incidence angle and an azimuthal incidence angle of detected electrons.

Abstract: A method of performing an electron multi-beam inspection of a semiconductor substrate includes generating a primary electron beam; focusing the primary electron beam to generate a focused electron beam including an optimized beam illumination area; generating sub-beams from the focused electron beam by causing the focused electron beam to impinge on a beam splitter such that the optimized beam illumination area is smaller than a total area of the beam splitter; and blocking a first plurality of the sub-beams by causing the sub-beams to impinge on a mask including a blocking area and an open area, such that a second plurality of the sub-beams passes through the mask, wherein the open area is located within the optimized beam illumination area. According to various embodiments, the method further includes dynamically controlling a size and shape of the blocking area and the open area by controlling the plurality of MEMS shutters.

Abstract: A fixed bed reactor based on the principle of thermoluminescence to achieve in-situ heat removal and in-situ temperature measurement for strong exothermic reactions can monitor the temperature and heat of the exothermic reaction process from multiple angles, enhance the heat transfer of the catalytic bed layer, and effectively reduce or eliminate the hot spots generated by the exothermic reaction process. This reactor includes a fixed bed reaction tube, and the top of the fixed bed reaction tube is equipped with a xenon lamp pretreatment system, an optical signal detection system, and an infrared temperature measurement system.

Abstract: Analysis of an integrated circuit (IC) includes acquiring a review scanning electron microscope (RSEM) image of the IC, and acquiring a voltage contrast electron beam image of the IC. A layout image is rendered from a layout file descriptive of a layout of the IC. A transform between spatial coordinates of the RSEM image of the IC and spatial coordinates of the voltage contrast electron beam image of the IC is determined using the layout image. A voltage contrast (VC) defect or other VC targeted pattern is identified in the voltage contrast electron beam image of the IC, and at least one region of interest (ROI) is located in the RSEM image of the IC associated with the VC defect using the spatial transform. The at least one ROI in the RSEM image of the IC is analyzed to produce information for the VC defect or other VC targeted pattern.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: The present invention discloses an interfering RNA for inhibiting PCSK9 gene and use thereof. The interfering RNA comprises a nucleotide sequence set forth in any one or two or more of SEQ ID NOs: 1-40, 73-96. The interfering RNA of the present invention can better target and silence hepatic PCSK9 mRNA, reduce the protein level of PCSK9, enhance LDL-C metabolism, and reduce serum cholesterol, providing a solid technical foundation for the development of siRNA medicaments for the prevention, treatment, and symptom alleviation of PCSK9 gene-mediated diseases.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: An aquavoltaic system and an aquavoltaic method applied to the aquavoltaic system are provided. The aquavoltaic system comprises a fish pool, a photovoltaic power generation assembly, and a power storage assembly; a power-consuming device comprises a detection unit, a water quality regulating unit and a power regulator that are arranged in the fish pool; and an electric energy output end of the photovoltaic power generation assembly is connected to an electric energy input end of the power-consuming device via a first circuit, the electric energy output end of the photovoltaic power generation assembly is connected to an electric energy input end of the power storage assembly via a third circuit, the electric energy input end of the power-consuming device is connected to an electric energy output end of the power storage assembly via a fifth circuit, and a fifth switch is arranged on the third circuit.

Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for optimizing performance issues. One of the methods includes maintaining, for a plurality of devices at least some of which have different contexts, metric data for an application that executed on each of the plurality of devices; determining, for a metric attribute from a plurality of metric attributes and a subset of the plurality of devices each of which have at least one common context, a potential performance issue for the subset of the plurality of devices using aggregated metric data for the metric attribute; determining, using at least a portion of the aggregated metric data, a portion of a code base or a hardware subcomponent that likely caused the potential performance issue; and providing data for the portion of the code base or the hardware subcomponent that likely caused the potential performance issue.

Abstract: Disclosed in the present invention are a targeting antibody-polyethylene glycol-siRNA drug conjugate, and a preparation method therefor and the use thereof. The ligand drug conjugate has a structure as represented by general formula (I). Further disclosed in the present invention is that a polyethylene glycol derivative having excellent biocompatibility is used as a linker, and targeted delivery of specific CFD-siRNA is achieved using binding specificity of an antibody and an antigen. The drug conjugate has high biocompatibility and minor side effects, can effectively inhibit CFD gene expression, and provides a new choice for preventing or treating CFD-related diseases.

Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.

Abstract: A hyaluronic acid derivative or a salt thereof, and a preparation method therefor and an application thereof. Hyaluronic acid is used as a matrix skeleton, and a methoxypolyethylene glycol epoxy derivative is used to modify hyaluronic acid to prepare a pegylated hyaluronic acid derivative. The skeleton of hyaluronic acid is wound by using polyethylene glycol linear macromolecules, so that a glycosidic bond facilitating enzymolysis is masked, a circulation duration of sodium hyaluronate in the body is prolonged, and the moisture retention and moisture lock effect can be better exerted. Meanwhile, polyethylene glycol and sodium hyaluronate, serving as artificially synthesized and naturally existing high polymer materials, both have good biocompatibility and biodegradability, and are combined, so that the advantages of the high polymer material can be better exerted.

Abstract: A method for detecting defects in a semiconductor structure is provided. The method includes the following operations. A semiconductor structure having a plurality of conductive structures is received. An electron beam inspection operation is performed on the plurality of conductive structures of the semiconductor structure to obtain an inspection data, wherein a pulsed electron beam utilized in the electron beam inspection operation is selected from the group consisting of a nanosecond pulsed beam, a picosecond pulsed beam, and a femtosecond pulsed beam. A first conductive structure having a non-open defect is identified from the inspection data. A method for classifying semiconductor structure is also provided.

Abstract: A method of qualifying semiconductor wafer processing includes: illuminating a semiconductor wafer simultaneously with source light having wavelengths in a plurality of wavebands, including at least a first waveband and a second waveband, the second waveband being different from the first waveband; separating light reflected from the semiconductor wafer as a result of said illuminating, the separating dividing the reflected light according to waveband; generating a first image of the semiconductor wafer based on reflected light separated into the first waveband; and, generating a second image of the semiconductor wafer base on reflected light separated into the second waveband.