Patents by Inventor Xiaomeng Chen

Xiaomeng Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250138984
    Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for optimizing performance issues. One of the methods includes maintaining, for a plurality of devices at least some of which have different contexts, metric data for an application that executed on each of the plurality of devices; determining, for a metric attribute from a plurality of metric attributes and a subset of the plurality of devices each of which have at least one common context, a potential performance issue for the subset of the plurality of devices using aggregated metric data for the metric attribute; determining, using at least a portion of the aggregated metric data, a portion of a code base or a hardware subcomponent that likely caused the potential performance issue; and providing data for the portion of the code base or the hardware subcomponent that likely caused the potential performance issue.
    Type: Application
    Filed: October 27, 2023
    Publication date: May 1, 2025
    Inventors: Abhinav Pathak, Amit K. Vyas, Anand Ramadurai, Anca A. Chandra, Anshul Dawra, Ashish Patro, David S. Choi, Jonathan Y. Hanna, Nehal Bhandari, Ning Ding, Rohit Mundra, Ryan A. Carlson, Xiaomeng Chen, Yue Li, Zoe S. Bohn
  • Publication number: 20250099602
    Abstract: Disclosed in the present invention are a targeting antibody-polyethylene glycol-siRNA drug conjugate, and a preparation method therefor and the use thereof. The ligand drug conjugate has a structure as represented by general formula (I). Further disclosed in the present invention is that a polyethylene glycol derivative having excellent biocompatibility is used as a linker, and targeted delivery of specific CFD-siRNA is achieved using binding specificity of an antibody and an antigen. The drug conjugate has high biocompatibility and minor side effects, can effectively inhibit CFD gene expression, and provides a new choice for preventing or treating CFD-related diseases.
    Type: Application
    Filed: July 20, 2022
    Publication date: March 27, 2025
    Inventors: Xiaomeng CHEN, Hongli JIA, Meina LIN, Qingbin WANG, Xuan ZHAO
  • Patent number: 12255062
    Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.
    Type: Grant
    Filed: November 14, 2023
    Date of Patent: March 18, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Xin-Hua Huang, Ping-Yin Liu, Hung-Hua Lin, Hsun-Chung Kuang, Yuan-Chih Hsieh, Lan-Lin Chao, Chia-Shiung Tsai, Xiaomeng Chen
  • Publication number: 20250075009
    Abstract: A hyaluronic acid derivative or a salt thereof, and a preparation method therefor and an application thereof. Hyaluronic acid is used as a matrix skeleton, and a methoxypolyethylene glycol epoxy derivative is used to modify hyaluronic acid to prepare a pegylated hyaluronic acid derivative. The skeleton of hyaluronic acid is wound by using polyethylene glycol linear macromolecules, so that a glycosidic bond facilitating enzymolysis is masked, a circulation duration of sodium hyaluronate in the body is prolonged, and the moisture retention and moisture lock effect can be better exerted. Meanwhile, polyethylene glycol and sodium hyaluronate, serving as artificially synthesized and naturally existing high polymer materials, both have good biocompatibility and biodegradability, and are combined, so that the advantages of the high polymer material can be better exerted.
    Type: Application
    Filed: January 9, 2023
    Publication date: March 6, 2025
    Inventors: Meina LIN, Xiaomeng CHEN, Yu SUN, Xuan ZHAO
  • Publication number: 20250028253
    Abstract: A method for detecting defects in a semiconductor structure is provided. The method includes the following operations. A semiconductor structure having a plurality of conductive structures is received. An electron beam inspection operation is performed on the plurality of conductive structures of the semiconductor structure to obtain an inspection data, wherein a pulsed electron beam utilized in the electron beam inspection operation is selected from the group consisting of a nanosecond pulsed beam, a picosecond pulsed beam, and a femtosecond pulsed beam. A first conductive structure having a non-open defect is identified from the inspection data. A method for classifying semiconductor structure is also provided.
    Type: Application
    Filed: November 15, 2023
    Publication date: January 23, 2025
    Inventors: YEN-FONG CHAN, PEI-HSUAN LEE, XIAOMENG CHEN
  • Publication number: 20240363451
    Abstract: A method of qualifying semiconductor wafer processing includes: illuminating a semiconductor wafer simultaneously with source light having wavelengths in a plurality of wavebands, including at least a first waveband and a second waveband, the second waveband being different from the first waveband; separating light reflected from the semiconductor wafer as a result of said illuminating, the separating dividing the reflected light according to waveband; generating a first image of the semiconductor wafer based on reflected light separated into the first waveband; and, generating a second image of the semiconductor wafer base on reflected light separated into the second waveband.
    Type: Application
    Filed: July 9, 2024
    Publication date: October 31, 2024
    Inventors: Shih-Chang Wang, Hsiu-Hui Huang, Hung-Yi Chung, Chien-Huei Chen, Xiaomeng Chen
  • Publication number: 20240350640
    Abstract: A new typepolyethylene glycol lipid and the use thereof. The lipid is free of in-vivo cleavable bonds, and can deliver a bioactive substance to a target cell or organ more stably. In addition, the new typepolyethylene glycol lipid can be positively charged in a specific pH environment, and can more easily form stable particles with the bioactive substance, so that the bioactive substance plays a role in the target cell or organ.
    Type: Application
    Filed: February 21, 2022
    Publication date: October 24, 2024
    Inventors: Meina LIN, Shuzhen HU, Changyou ZHU, Qingbin WANG, Jie WANG, Hongli JIA, Xiaomeng CHEN, Xuan ZHAO
  • Patent number: 12068207
    Abstract: A method of qualifying semiconductor wafer processing includes: illuminating a semiconductor wafer simultaneously with source light having wavelengths in a plurality of wavebands, including at least a first waveband and a second waveband, the second waveband being different from the first waveband; separating light reflected from the semiconductor wafer as a result of said illuminating, the separating dividing the reflected light according to waveband; generating a first image of the semiconductor wafer based on reflected light separated into the first waveband; and, generating a second image of the semiconductor wafer base on reflected light separated into the second waveband.
    Type: Grant
    Filed: May 27, 2022
    Date of Patent: August 20, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Chang Wang, Hsiu-Hui Huang, Hung-Yi Chung, Chien-Huei Chen, Xiaomeng Chen
  • Publication number: 20240266232
    Abstract: A high atomic number material is applied to one or more surfaces of a semiconductor structure of a wafer. The one or more surfaces are at a depth different from a depth of a surface of the wafer. An electron beam is scanned over the semiconductor structure to cause a backscattered electron signal to be collected at a collector. A profile scan of the semiconductor structure is generated based on an intensity of the backscattered electron signal, at the collector, resulting from the high atomic number material. The high atomic number material increases the intensity of the backscattered electron signal for the one or more surfaces of the semiconductor structure such that contrast in the profile scan is increased. The increased contrast of the profile scan enables accurate critical dimension measurements of the semiconductor structure.
    Type: Application
    Filed: April 3, 2024
    Publication date: August 8, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Pei-Hsuan LEE, Hung-Ming CHEN, Kuang-Shing CHEN, Yu-Hsiang CHENG, Xiaomeng CHEN
  • Publication number: 20240178263
    Abstract: A device includes two BSI image sensor elements and a third element. The third element is bonded in between the two BSI image sensor elements using element level stacking methods. Each of the BSI image sensor elements includes a substrate and a metal stack disposed over a first side of the substrate. The substrate of the BSI image sensor element includes a photodiode region for accumulating an image charge in response to radiation incident upon a second side of the substrate. The third element also includes a substrate and a metal stack disposed over a first side of the substrate. The metal stacks of the two BSI image sensor elements and the third element are electrically coupled.
    Type: Application
    Filed: February 5, 2024
    Publication date: May 30, 2024
    Inventors: Ping-Yin Liu, Yeur-Luen Tu, Chia-Shiung Tsai, Xiaomeng Chen, Pin-Nan Tseng
  • Patent number: 11994902
    Abstract: A liquid crystal display (LCD) includes several transparent material layers and several non-transparent material layers that are disposed in a stacked mode. The LCD also has a local transparent region, and no non-transparent material is applied to the several non-transparent material layers in the local transparent region. This forms a transparent channel in the local transparent region along a stacking direction. An optical component is completely or partially disposed in the transparent channel of the LCD display. The optical component may be a camera, an ambient light sensor, an optical fingerprint sensor, or another component disposed under the display by using the local transparent region on the LCD display.
    Type: Grant
    Filed: February 8, 2022
    Date of Patent: May 28, 2024
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Bangshi Yin, Fan Yang, Bin Yan, Kangle Xue, Xiaomeng Chen
  • Patent number: 11984365
    Abstract: A high atomic number material is applied to one or more surfaces of a semiconductor structure of a wafer. The one or more surfaces are at a depth different from a depth of a surface of the wafer. An electron beam is scanned over the semiconductor structure to cause a backscattered electron signal to be collected at a collector. A profile scan of the semiconductor structure is generated based on an intensity of the backscattered electron signal, at the collector, resulting from the high atomic number material. The high atomic number material increases the intensity of the backscattered electron signal for the one or more surfaces of the semiconductor structure such that contrast in the profile scan is increased. The increased contrast of the profile scan enables accurate critical dimension measurements of the semiconductor structure.
    Type: Grant
    Filed: March 19, 2021
    Date of Patent: May 14, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Pei-Hsuan Lee, Hung-Ming Chen, Kuang-Shing Chen, Yu-Hsiang Cheng, Xiaomeng Chen
  • Publication number: 20240144467
    Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.
    Type: Application
    Filed: January 8, 2024
    Publication date: May 2, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Huei Chen, Pei-Chao Su, Xiaomeng Chen, Chan-Ming Chang, Shih-Yung Chen, Hung-Yi Chung, Kuang-Shing Chen, Li-Jou Lee, Yung-Cheng Lin, Wei-Chen Wu, Shih-Chang Wang, Chien-An Lin
  • Publication number: 20240087879
    Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.
    Type: Application
    Filed: November 14, 2023
    Publication date: March 14, 2024
    Inventors: Xin-Hua Huang, Ping-Yin Liu, Hung-Hua Lin, Hsun-Chung Kuang, Yuan-Chih Hsieh, Lan-Lin Chao, Chia-Shiung Tsai, Xiaomeng Chen
  • Patent number: 11900586
    Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.
    Type: Grant
    Filed: December 15, 2020
    Date of Patent: February 13, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Huei Chen, Pei-Chao Su, Xiaomeng Chen, Chan-Ming Chang, Shih-Yung Chen, Hung-Yi Chung, Kuang-Shing Chen, Li-Jou Lee, Yung-Cheng Lin, Wei-Chen Wu, Shih-Chang Wang, Chien-An Lin
  • Patent number: 11894408
    Abstract: A device includes two BSI image sensor elements and a third element. The third element is bonded in between the two BSI image sensor elements using element level stacking methods. Each of the BSI image sensor elements includes a substrate and a metal stack disposed over a first side of the substrate. The substrate of the BSI image sensor element includes a photodiode region for accumulating an image charge in response to radiation incident upon a second side of the substrate. The third element also includes a substrate and a metal stack disposed over a first side of the substrate. The metal stacks of the two BSI image sensor elements and the third element are electrically coupled.
    Type: Grant
    Filed: June 14, 2021
    Date of Patent: February 6, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ping-Yin Liu, Yeur-Luen Tu, Chia-Shiung Tsai, Xiaomeng Chen, Pin-Nan Tseng
  • Patent number: 11854795
    Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.
    Type: Grant
    Filed: March 21, 2022
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Xin-Hua Huang, Ping-Yin Liu, Hung-Hua Lin, Hsun-Chung Kuang, Yuan-Chih Hsieh, Lan-Lin Chao, Chia-Shiung Tsai, Xiaomeng Chen
  • Patent number: 11856750
    Abstract: A semiconductor arrangement includes a logic region and a memory region. The memory region has an active region that includes a semiconductor device. The memory region also has a capacitor within one or more dielectric layers over the active region, where the capacitor is over the semiconductor device. The semiconductor arrangement also includes a protective ring within at least one of the logic region or the memory region and that separates the logic region from the memory region. The capacitor has a first electrode, a second electrode and an insulating layer between the first electrode and the second electrode, where the first electrode is substantially larger than other portions of the capacitor.
    Type: Grant
    Filed: May 17, 2021
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Chern-Yow Hsu, Chen-Jong Wang, Chia-Shiung Tsai, Shih-Chang Liu, Xiaomeng Chen
  • Publication number: 20230411224
    Abstract: A system configured to detect defects on a wafer is provided. The system includes an inspection subsystem configured to acquire scan data of a target region on the wafer. The target region comprises a plurality of circuit layout streaming data on the wafer and the defects in proximity to the circuit layout streaming data or in the circuit layout streaming data. A graphic design subsystem (GDS) is configured to store a map of circuit layout streaming data of the wafer. A software tool for designing electronic systems is configured to label the scan data with attributes from the map of circuit layout streaming data. A decision subsystem is configured to qualify the process based on a predetermined defect level from the labeled scan data by using a multi-dimension clustering method, wherein the predetermined defect level is an accumulated defect formed on the semiconductor wafer during processing.
    Type: Application
    Filed: June 16, 2022
    Publication date: December 21, 2023
    Inventors: SHIH-CHANG WANG, HSIU-HUI HUANG, FENG-JU CHANG, YEN-FONG CHAN, CHIEN-HUEI CHEN, XIAOMENG CHEN
  • Publication number: 20230411223
    Abstract: A method of qualifying semiconductor wafer processing includes: illuminating a semiconductor wafer simultaneously with source light having wavelengths in a plurality of wavebands, including at least a first waveband and a second waveband, the second waveband being different from the first waveband; separating light reflected from the semiconductor wafer as a result of said illuminating, the separating dividing the reflected light according to waveband; generating a first image of the semiconductor wafer based on reflected light separated into the first waveband; and, generating a second image of the semiconductor wafer base on reflected light separated into the second waveband.
    Type: Application
    Filed: May 27, 2022
    Publication date: December 21, 2023
    Inventors: Shih-Chang Wang, Hsiu-Hui Huang, Hung-Yi Chung, Chien-Huei Chen, Xiaomeng Chen