Patents by Inventor Xiaoming Xie
Xiaoming Xie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11679978Abstract: The present disclosure provides a method for preparing a multi-layer hexagonal boron nitride film, including: preparing a substrate; preparing a boron-containing solid catalyst, and disposing the boron-containing solid catalyst on the substrate; annealing the boron-containing solid catalyst to melt the boron-containing solid catalyst; feeding a nitrogen-containing gas and a protecting gas to an atmosphere in which the melted boron-containing solid catalyst resides, the nitrogen-containing gas reacts with the boron-containing solid catalyst to form the multi-layer hexagonal boron nitride film on a surface of the substrate. The method for preparing a multi-layer hexagonal boron nitride film can prepare a hexagonal boron nitride film having a lateral size in the order of inches and a thickness from several nanometers to several hundred nanometers on the surface of the substrate, providing a favorable basis for the application of hexagonal boron nitride in the field of two-dimensional material devices.Type: GrantFiled: October 14, 2019Date of Patent: June 20, 2023Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Zhiyuan Shi, Tianru Wu, Guangyuan Lu, Xiujun Wang, Chao Zhang, Haomin Wang, Xiaoming Xie
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Publication number: 20210363010Abstract: The present disclosure provides a method for preparing a multi-layer hexagonal boron nitride film, including: preparing a substrate; preparing a boron-containing solid catalyst, and disposing the boron-containing solid catalyst on the substrate; annealing the boron-containing solid catalyst to melt the boron-containing solid catalyst; feeding a nitrogen-containing gas and a protecting gas to an atmosphere in which the melted boron-containing solid catalyst resides, the nitrogen-containing gas reacts with the boron-containing solid catalyst to form the multi-layer hexagonal boron nitride film on a surface of the substrate. The method for preparing a multi-layer hexagonal boron nitride film can prepare a hexagonal boron nitride film having a lateral size in the order of inches and a thickness from several nanometers to several hundred nanometers on the surface of the substrate, providing a favorable basis for the application of hexagonal boron nitride in the field of two-dimensional material devices.Type: ApplicationFiled: October 14, 2019Publication date: November 25, 2021Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Zhiyuan SHI, Tianru WU, Guangyuan LU, Xiujun WANG, Chao ZHANG, Haomin WANG, Xiaoming XIE
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Publication number: 20210233264Abstract: The present application discloses a cork coding method and device, a cork tracing method and device, and an electronic device, wherein, the cork coding method comprises: acquiring an original image of a to-be-coded cork with an original character code; identifying the original character code in the original image; determining whether the original character code is matched with a character already inputted into a database; extracting an original texture feature of an to-be-coded cork from the original image, if the original character code is not matched with the character in the database; and establishing a one-to-one correspondence between the original texture feature and the original character code.Type: ApplicationFiled: May 8, 2019Publication date: July 29, 2021Inventors: Jun OUYANG, Xinyi ZHAO, Xiaoming XIE, Xu ZHANG, Chun LU, Lin WANG, Kai TAN, Xingang ZHAO
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Publication number: 20210060165Abstract: A light-controlled antibacterial agent composed of linear cationic oligopeptide and multi-arm ?-cyclodextrin that regulates antibacterial activity with light, belongs to the technical field of antibacterial materials. The light-controlled antibacterial agent with light response composed of linear cationic oligopeptide and multi-Arm ?-cyclodextrin of the present invention is cross-linked aggregates formed from linear cationic oligopeptide containing azobenzene and multi-arm cyclodextrin by “host-guest” recognition. The linear cationic oligopeptide and the multi-arm ?-cyclodextrin have significantly different antibacterial activities in two states of aggregation and deaggregation.Type: ApplicationFiled: November 12, 2020Publication date: March 4, 2021Inventors: Wen Li, Xiaoming Xie, Bao Li, Lixin Wu
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Patent number: 10928304Abstract: A method for adjusting and controlling a boundary of graphene, comprising: providing an insulating substrate and placing the insulating substrate in a growth chamber; and feeding first reaction gas into the growth chamber, the first reaction gas at least comprising carbon source gas, and controlling a flow rate of the first reaction gas to forming a graphene structure having a first boundary shape on a surface of the insulating substrate through controlling a flow rate of the first reaction gas. The present invention realizes the controllability of the boundary of the graphene by adjusting the ratio of the carbon source gas to catalytic gas in the growth process of graphene on the surface of the substrate; the present invention can enable graphene to sequentially continuously grow by changing growth conditions on the basis of already formed graphene, so as to change the original boundary shape of the graphene.Type: GrantFiled: May 28, 2018Date of Patent: February 23, 2021Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Haomin Wang, Lingxiu Chen, Li He, Huishan Wang, Hong Xie, Xiujun Wang, Xiaoming Xie
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Patent number: 10539633Abstract: An ultrahigh resolution magnetic resonance imaging method and apparatus, the method comprises the following steps of: placing a test sample within an action range of a magnetic gradient source and a nano-scale superconducting quantum interference device, applying a static magnetic field on the test sample by a static magnetic source, and applying a nuclear magnetic resonance radio-frequency pulse on the test sample by a radio-frequency source to excite the test sample to cause nuclear magnetic resonance; directly coupling the nano-scale superconducting quantum interference device with the test sample to detect nuclear magnetic resonance spectrum signals generated by the test sample; establishing an image of the test sample according to the detected nuclear magnetic resonance spectrum signals and space distribution information of gradient magnetic fields generated by the magnetic gradient source.Type: GrantFiled: December 18, 2014Date of Patent: January 21, 2020Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Lei Chen, Zhen Wang, Xiaoming Xie, Mianheng Jiang
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Patent number: 10253428Abstract: The present disclosure provides a local carbon-supply device and a method for preparing a wafer-level graphene single crystal by local carbon supply. The method includes: providing the local carbon-supply device; preparing a nickel-copper alloy substrate, placing the nickel-copper alloy substrate in the local carbon-supply device; placing the local carbon-supply device provided with the nickel-copper alloy substrate in a chamber of a chemical vapor-phase deposition system, and introducing a gaseous carbon source into the local carbon-supply device to grow the graphene single crystal on the nickel-copper alloy substrate. A graphene prepared by embodiments of the present disclosure has the advantages of good crystallinity of a crystal domain, simple preparation condition, low cost, a wider window of condition parameters required for growth, and good repeatability, which lays a foundation for wide application of the wafer-level graphene single crystal in a graphene apparatus and other fields.Type: GrantFiled: June 4, 2015Date of Patent: April 9, 2019Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Tianru Wu, Xuefu Zhang, Guangyuan Lu, Chao Yang, Haomin Wang, Xiaoming Xie, Mianheng Jiang
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Publication number: 20190094128Abstract: A method for adjusting and controlling a boundary of graphene, comprising: providing an insulating substrate and placing the insulating substrate in a growth chamber; and feeding first reaction gas into the growth chamber, the first reaction gas at least comprising carbon source gas, and controlling a flow rate of the first reaction gas to forming a graphene structure having a first boundary shape on a surface of the insulating substrate through controlling a flow rate of the first reaction gas. The present invention realizes the controllability of the boundary of the graphene by adjusting the ratio of the carbon source gas to catalytic gas in the growth process of graphene on the surface of the substrate; the present invention can enable graphene to sequentially continuously grow by changing growth conditions on the basis of already formed graphene, so as to change the original boundary shape of the graphene.Type: ApplicationFiled: May 28, 2018Publication date: March 28, 2019Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: HAOMIN WANG, LINGXIU CHEN, LI HE, HUISHAN WANG, HONG XIE, XIUJUN WANG, XIAOMING XIE
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Patent number: 10017878Abstract: The present invention provides a growth method of grapheme, which at least comprises the following steps: S1: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S3: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.Type: GrantFiled: March 26, 2015Date of Patent: July 10, 2018Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Haomin Wang, Shujie Tang, Guangyuan Lu, Tianru Wu, Da Jiang, Guqiao Ding, Xuefu Zhang, Hong Xie, Xiaoming Xie, Mianheng Jiang
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Publication number: 20180002831Abstract: The present invention provides a growth method of grapheme, which at least comprises the following steps: S1: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S3: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.Type: ApplicationFiled: March 26, 2015Publication date: January 4, 2018Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: HAOMIN WANG, SHUJIE TANG, GUANGYUAN LU, TIANRU WU, DA JIANG, GUQIAO DING, XUEFU ZHANG, HONG XIE, XIAOMING XIE, MIANHENG JIANG
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Patent number: 9850571Abstract: The invention belongs to the technical field of inorganic compounds, and particularly, relates to a method for directly preparing graphene by taking CBr4 as a source material and using methods such as molecular-beam epitaxy (MBE) or chemical vapor deposition (CVD). A method for preparing graphene comprises the following steps: selecting a proper material as a substrate; directly depositing a catalyst and CBr4 on a surface of the substrate; and performing annealing treatment on the sample obtained through deposition. Compared with other technologies, an innovative point of the method in the invention is that the catalyst and CBr4 source can be quantitatively and controllably deposited on any substrate, and the catalyst and CBr4 source react on the surface of the substrate to form the graphene, so that the dependence of the graphene growth on a substrate material can be reduced to a great extent, and different substrate materials can be selected according to different application backgrounds.Type: GrantFiled: July 3, 2012Date of Patent: December 26, 2017Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Shumin Wang, Qian Gong, Xiaoming Xie, Hailong Wang, Zengfeng Di, Guqiao Ding, Qingbo Liu
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Publication number: 20170130360Abstract: The present disclosure provides a local carbon-supply device and a method for preparing a wafer-level graphene single crystal by local carbon supply. The method includes: providing the local carbon-supply device; preparing a nickel-copper alloy substrate, placing the nickel-copper alloy substrate in the local carbon-supply device; placing the local carbon-supply device provided with the nickel-copper alloy substrate in a chamber of a chemical vapor-phase deposition system, and introducing a gaseous carbon source into the local carbon-supply device to grow the graphene single crystal on the nickel-copper alloy substrate. A graphene prepared by embodiments of the present disclosure has the advantages of good crystallinity of a crystal domain, simple preparation condition, low cost, a wider window of condition parameters required for growth, and good repeatability, which lays a foundation for wide application of the wafer-level graphene single crystal in a graphene apparatus and other fields.Type: ApplicationFiled: June 4, 2015Publication date: May 11, 2017Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Tianru WU, Xuefu ZHANG, Guangyuan LU, Chao YANG, Haomin WANG, Xiaoming XIE, Mianheng JIANG
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Publication number: 20170102440Abstract: An ultrahigh resolution magnetic resonance imaging method and apparatus, the method comprises the following steps of: placing a test sample within an action range of a magnetic gradient source and a nano-scale superconducting quantum interference device, applying a static magnetic field on the test sample by a static magnetic source, and applying a nuclear magnetic resonance radio-frequency pulse on the test sample by a radio-frequency source to excite the test sample to cause nuclear magnetic resonance; directly coupling the nano-scale superconducting quantum interference device with the test sample to detect nuclear magnetic resonance spectrum signals generated by the test sample; establishing an image of the test sample according to the detected nuclear magnetic resonance spectrum signals and space distribution information of gradient magnetic fields generated by the magnetic gradient source.Type: ApplicationFiled: December 18, 2014Publication date: April 13, 2017Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: LEI CHEN, ZHEN WANG, XIAOMING XIE, MIANHENG JIANG
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Patent number: 9570294Abstract: A preparation method of a graphene nanoribbon on h-BN, comprising: 1) forming a h-BN groove template with a nano ribbon-shaped groove structure on the h-BN by adopting a metal catalysis etching method; 2) growing a graphene nanoribbon in the h-BN groove template by adopting a chemical vapor deposition method. In the present invention, a CVD method is adopted to directly prepare a morphology controllable graphene nanoribbon on the h-BN, which helps to solve the long-term critical problem that the graphene is difficult to nucleate and grow on an insulating substrate, and to avoid the series of problems introduced by the complicated processes of the transferring of the graphene and the subsequent clipping manufacturing for a nanoribbon and the like.Type: GrantFiled: July 20, 2015Date of Patent: February 14, 2017Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Haomin Wang, Li He, Lingxiu Chen, Hong Xie, Huishan Wang, Shujie Tang, Lei Li, Daoli Zhang, Xiaoming Xie, Mianheng Jiang
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Publication number: 20160260604Abstract: A preparation method of a graphene nanoribbon on h-BN, comprising: 1) forming a h-BN groove template with a nano ribbon-shaped groove structure on the h-BN by adopting a metal catalysis etching method; 2) growing a graphene nanoribbon in the h-BN groove template by adopting a chemical vapor deposition method. In the present invention, a CVD method is adopted to directly prepare a morphology controllable graphene nanoribbon on the h-BN, which helps to solve the long-term critical problem that the graphene is difficult to nucleate and grow on an insulating substrate, and to avoid the series of problems introduced by the complicated processes of the transferring of the graphene and the subsequent clipping manufacturing for a nanoribbon and the like.Type: ApplicationFiled: July 20, 2015Publication date: September 8, 2016Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: HAOMIN WANG, LI HE, LINGXIU CHEN, HONG XIE, HUISHAN WANG, SHUJIE TANG, LEI LI, DAOLI ZHANG, XIAOMING XIE, MIANHENG JIANG
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Patent number: 9328413Abstract: A method for growing a graphene nanoribbon on an insulating substrate having a cleavage plane with atomic level flatness is provided, and belongs to the field of low-dimensional materials and new materials. The method includes the following steps. Step 1: Cleave an insulating substrate to obtain a cleavage plane with atomic level flatness, and prepare a single atomic layer step. Step 2: Directly grow a graphene nanoribbon on the insulating substrate having regular single atomic steps. In the method, a characteristic that nucleation energy of graphene on the atomic step is different from that on the flat cleavage plane is used, and conditions, such as the temperature, intensity of pressure and supersaturation degree of activated carbon atoms, are adjusted, so that the graphene grows only along a step edge into a graphene nanoribbon of an adjustable size. The method is mainly applied to the field of new-type graphene optoelectronic devices.Type: GrantFiled: August 5, 2011Date of Patent: May 3, 2016Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Shujie Tang, Guqiao Ding, Xiaoming Xie, Ji Chen, Chen Wang, Mianheng Jiang
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Publication number: 20150292110Abstract: The invention belongs to the technical field of inorganic compounds, and particularly, relates to a method for directly preparing graphene by taking CBr4 as a source material and using methods such as molecular-beam epitaxy (MBE) or chemical vapor deposition (CVD). A method for preparing graphene comprises the following steps: selecting a proper material as a substrate; directly depositing a catalyst and CBr4 on a surface of the substrate; and performing annealing treatment on the sample obtained through deposition. Compared with other technologies, an innovative point of the method in the invention is that the catalyst and CBr4 source can be quantitatively and controllably deposited on any substrate, and the catalyst and CBr4 source react on the surface of the substrate to form the graphene, so that the dependence of the graphene growth on a substrate material can be reduced to a great extent, and different substrate materials can be selected according to different application backgrounds.Type: ApplicationFiled: July 3, 2012Publication date: October 15, 2015Inventors: Shumin Wang, Qian Gong, Xiaoming Xie, Hailong Wang, Zengfeng Di, Guqiao Ding, Qingbo Liu
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Publication number: 20130078424Abstract: The present invention provides a hexagonal boron nitride (hBN) substrate with a monatomic layer step and a preparation method thereof, where a surface of the hBN substrate is cleaved to obtain a fresh cleavage plane, and then hBN is etched by using hydrogen at a high temperature to obtain a controllable and regular monatomic layer step. The present invention utilizes an anisotropic etching effect of hydrogen on the hBN and controls an etching rate and degree of the etching by adjusting a hydrogen proportion, the annealing temperature, and the annealing time, so as to achieve the objective of etching the regular monatomic layer step. The preparation process is compatible with the process of preparing graphene through a chemical vapor deposition (CVD) method, and is applicable to preparation of a graphene nanoribbon. The present invention is mainly applied to new graphene electronic devices.Type: ApplicationFiled: August 5, 2011Publication date: March 28, 2013Inventors: Guqiao Ding, Shujie Tang, Xiaoming Xie, Mianheng Jiang
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Publication number: 20130022813Abstract: A method for growing a graphene nanoribbon on an insulating substrate having a cleavage plane with atomic level flatness is provided, and belongs to the field of low-dimensional materials and new materials. The method includes the following steps. Step 1: Cleave an insulating substrate to obtain a cleavage plane with atomic level flatness, and prepare a single atomic layer step. Step 2: Directly grow a graphene nanoribbon on the insulating substrate having regular single atomic steps. In the method, a characteristic that nucleation energy of graphene on the atomic step is different from that on the flat cleavage plane is used, and conditions, such as the temperature, intensity of pressure and supersaturation degree of activated carbon atoms, are adjusted, so that the graphene grows only along a step edge into a graphene nanoribbon of an adjustable size. The method is mainly applied to the field of new-type graphene optoelectronic devices.Type: ApplicationFiled: August 5, 2011Publication date: January 24, 2013Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMYInventors: Shujie Tang, Guqiao Ding, Xiaoming Xie, Ji Chen, Chen Wang, Mianheng Jiang
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Patent number: D973553Type: GrantFiled: March 16, 2020Date of Patent: December 27, 2022Inventor: Xiaoming Xie