Abstract: A conversion circuit is disclosed. In one aspect, the conversion circuit includes a first input terminal for receiving a digital signal. The conversion circuit includes a second input terminal for receiving a bias voltage signal. The conversion circuit includes an output terminal for outputting a current. The conversion circuit includes a first and a second switch transistor connected to the first input terminal for receiving the digital signal. The conversion circuit includes a first and a second current source transistor connected to the second input terminal for receiving the bias voltage signal. The conversion circuit further includes a first branch, wherein the first switch transistor is connected to the output terminal via the first current source transistor. The conversion circuit further includes a second branch, wherein the second current source transistor is connected to the output terminal via the second switch transistor.

Abstract: An ion optical apparatus and a mass spectrometer are provided. The ion optical apparatus includes at least one planar insulating substrate which is covered with metal patterns to form an electrode array including a plurality of cell electrodes, wherein each of the cell electrodes is arrayed according to a first direction to form a geometric pattern distribution of the electrode array, wherein cell electrodes are applied with radio frequency (RF) voltages having different phases to confine ions, a direct current (DC) voltage gradient is applied along at least part of the cell electrodes in the electrode array to drive ions to move in the first direction along the electrode array, and a corresponding electric field distribution is formed by the geometric pattern distribution to drive ions to move in a second direction substantially orthogonal to the first direction, thereby realizing ion deflection, focusing or defocusing.

Abstract: The present invention relates to an ion guide device and an ion guiding method. The ion guide device comprises: a plurality of electrode sets distributed along a central axis longitudinally, wherein each electrode set has a ring shape and consists of at least 2 segmented electrodes (for example, 1, 2 and 3, 4 for 2 sets respectively); the power supply system which provides radio-frequency with different phases applied to the adjacent electrode sets (for example, between 1,3 and 2,4) along the central axis, and provides DC Voltages on each segmented electrode (1,2,3,4), wherein, distribution of DC potential drives ions to move in the radial direction while driving said ions to move along the central axis. The ion guide can be used to guide and focus ions under relatively high gas pressure; especially it can be used for off-axis transmission of ions with the purpose to reduce the neutral noise.

Abstract: The invention relates to an ion generation device and an ion generation method, and more particularly to a device and a method which generates ions at the low pressure and then said ions can be transferred into the next stage in an off-axis manner. In the invention, ions from electrospray or other types of ion source are generated in the pressure which is lower than atmosphere pressure. A followed ion guide device can then transfer most of said generated ions into next stage in an off-axis manner, while most of neutral noise can be eliminated in this process.

Abstract: A conversion circuit is disclosed. In one aspect, the conversion circuit includes a first input terminal for receiving a digital signal. The conversion circuit includes a second input terminal for receiving a bias voltage signal. The conversion circuit includes an output terminal for outputting a current. The conversion circuit includes a first and a second switch transistor connected to the first input terminal for receiving the digital signal. The conversion circuit includes a first and a second current source transistor connected to the second input terminal for receiving the bias voltage signal. The conversion circuit further includes a first branch, wherein the first switch transistor is connected to the output terminal via the first current source transistor. The conversion circuit further includes a second branch, wherein the second current source transistor is connected to the output terminal via the second switch transistor.

Abstract: Methods of testing TSVs using eFuse cells prior to and post bonding wafers in a 3D IC stack are provided. Embodiments include providing a wafer of a 3D IC stack, the wafer having thin and thick metal layers; forming first and second TSVs on the wafer, the first and second TSVs laterally separated; forming an eFuse cell between and separated from the first and second TSVs; forming a FF adjacent to the second TSV and on an opposite side of the second TSV from the eFuse cell; connecting the first TSV, the eFuse cell, the second TSV, and the FF in series in an electric circuit; and testing the first and second TSVs prior to bonding the wafer to a subsequent wafer in the 3D IC stack.

Abstract: An ion mobility analyzer, combination device thereof, and ion mobility analysis method. The ion mobility analyzer comprises an electrode system that surrounds the analytical space and a power device that attaches to the electrode system an ion mobility electric potential field that moves along one space axis. During the process of analyzing mobility of ions to be measured, by always placing the ions to be measured in the moving ion mobility electric potential field, and keeping the movement direction of the ion mobility electric potential field consistent with the direction of the electric field on the ions to be measured within the ion mobility electric potential field, theoretically a mobility path of an infinite length can be formed so as to distinguish ions having mobility or ion cross sections that have very small differences.

Abstract: Methods of testing TSVs using eFuse cells prior to and post bonding wafers in a 3D IC stack are provided. Embodiments include providing a wafer of a 3D IC stack, the wafer having thin and thick metal layers; forming first and second TSVs on the wafer, the first and second TSVs laterally separated; forming an eFuse cell between and separated from the first and second TSVs; forming a FF adjacent to the second TSV and on an opposite side of the second TSV from the eFuse cell; connecting the first TSV, the eFuse cell, the second TSV, and the FF in series in an electric circuit; and testing the first and second TSVs prior to bonding the wafer to a subsequent wafer in the 3D IC stack.

Abstract: The present disclosure generally provides for an e-fuse structure and corresponding method for fusing the same and monitoring material leakage. The e-fuse structure can include a metal dummy structure and an electrical fuse link substantially aligned with a portion of the metal dummy structure, wherein the metal dummy structure cools at least part of the electrical fuse link in response to an electric current passing through the electrical fuse link.

Abstract: The present disclosure generally provides for an e-fuse structure and corresponding method for fusing the same and monitoring material leakage. The e-fuse structure can include a metal dummy structure and an electrical fuse link substantially aligned with a portion of the metal dummy structure, wherein the metal dummy structure cools at least part of the electrical fuse link in response to an electric current passing through the electrical fuse link.

Abstract: An electronic fuse includes a body, an anode coupled to the body, and a cathode coupled to the body. Each of the anode and the cathode includes a first line contacting the body. The first line is discontinuous along its length and includes a first portion and a second portion with a space therebetween. A second line is disposed above the first line and a plurality of vias couple the first and second lines. The first portion of the first line is coupled to a first subset of the plurality of vias and the second portion of the first line is coupled to a second subset of the vias.

Abstract: An ion guiding device (3) and method, the ion guiding device (3) having: a group of electrode arrays distributed along an axis in space, and a power supply providing an asymmetric alternating current (AC) electric field substantially along the axis; the AC field asymmetrically alternates between positive and negative along the axis to drive the ions move in the direction corresponding to said AC electric field such that ions are guided into said ion guiding device (3) in a continuous or quasi-continuous flow manner while being guided out in a pulsed manner along the axis.

Abstract: The present disclosure generally provides for an e-fuse structure and corresponding method for fusing the same and monitoring material leakage. The e-fuse structure can include a metal dummy structure and an electrical fuse link substantially aligned with a portion of the metal dummy structure, wherein the metal dummy structure cools at least part of the electrical fuse link in response to an electric current passing through the electrical fuse link.

Abstract: The invention relates to an ion generation device and an ion generation method, and more particularly to a device and a method which generates ions at the low pressure and then said ions can be transferred into the next stage in an off-axis manner. In the invention, ions from electrospray or other types of ion source are generated in the pressure which is lower than atmosphere pressure. A followed ion guide device can then transfer most of said generated ions into next stage in an off-axis manner, while most of neutral noise can be eliminated in this process.

Abstract: An e-fuse device disclosed herein includes an anode and a cathode that are conductively coupled to the doped region formed in a substrate, wherein the anode includes a first metal silicide region positioned on the doped region and a first conductive metal-containing contact that is positioned above and coupled to the first metal silicide region, and the cathode includes a second metal silicide region positioned on the doped region and a second conductive metal-containing contact that is positioned above and conductively coupled to the second metal silicide region. A method disclosed herein includes forming a doped region in a substrate for an e-fuse device and performing at least one common process operation to form a first conductive structure on the doped region of the e-fuse device and a second conductive structure on a source/drain region of a transistor.

Abstract: An e-fuse device disclosed herein includes an anode and a cathode that are conductively coupled to the doped region formed in a substrate, wherein the anode includes a first metal silicide region positioned on the doped region and a first conductive metal-containing contact that is positioned above and coupled to the first metal silicide region, and the cathode includes a second metal silicide region positioned on the doped region and a second conductive metal-containing contact that is positioned above and conductively coupled to the second metal silicide region. A method disclosed herein includes forming a doped region in a substrate for an e-fuse device and performing at least one common process operation to form a first conductive structure on the doped region of the e-fuse device and a second conductive structure on a source/drain region of a transistor.

Abstract: An ion mobility analyzer, combination device thereof, and ion mobility analysis method. The ion mobility analyzer comprises an electrode system that surrounds the analytical space and a power device that attaches to the electrode system an ion mobility electric potential field that moves along one space axis. During the process of analyzing mobility of ions to be measured, by always placing the ions to be measured in the moving ion mobility electric potential field, and keeping the movement direction of the ion mobility electric potential field consistent with the direction of the electric field on the ions to be measured within the ion mobility electric potential field, theoretically a mobility path of an infinite length can be formed so as to distinguish ions having mobility or ion cross sections that have very small differences.

Abstract: The present disclosure generally provides for an e-fuse structure and corresponding method for fusing the same and monitoring material leakage. The e-fuse structure can include a metal dummy structure and an electrical fuse link substantially aligned with a portion of the metal dummy structure, wherein the metal dummy structure cools at least part of the electrical fuse link in response to an electric current passing through the electrical fuse link.

Abstract: The present invention relates to an ion guide device and an ion guiding method. The ion guide device comprises: a plurality of electrode sets distributed along a central axis longitudinally, wherein each electrode set has a ring shape and consists of at least 2 segmented electrodes (for example, 1, 2 and 3, 4 for 2 sets respectively); the power supply system which provides radio-frequency with different phases applied to the adjacent electrode sets (for example, between 1,3 and 2,4) along the central axis, and provides DC Voltages on each segmented electrode (1,2,3,4), wherein, distribution of DC potential drives ions to move in the radial direction while driving said ions to move along the central axis. The ion guide can be used to guide and focus ions under relatively high gas pressure; especially it can be used for off-axis transmission of ions with the purpose to reduce the neutral noise.

Abstract: An integrated circuit product is disclosed that includes a resistor body and an e-fuse body positioned on a contact level dielectric material, wherein the resistor body and the e-fuse body are made of the same conductive material, a first plurality of conductive contact structures are coupled to the resistor body, conductive anode and cathode structures are conductively coupled to the e-fuse body, wherein the first plurality of conductive contact structures and the conductive anode and cathode structures are made of the same materials.