Abstract: A power module includes a lead frame, a substrate mounted on the lead frame, a first anchor pad, a second anchor pad, a plurality of die pads, and a plurality of transistor dies. The lead frame includes a first lead frame anchored bar attached to the first anchor pad, and a second lead frame anchored bar attached to the second anchor pad. The power module may include a single control IC or two or more control ICs. For the case including a single control IC, the singe control IC controls a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor. For the case including two control ICs, a low voltage IC controls a first transistor, a second transistor, and a third transistor and the high voltage IC controls a fourth transistor, a fifth transistor, and a sixth transistor.

Abstract: An intelligent power module (IPM) comprises a first transistor die supporting element, a second transistor die supporting element, a third transistor die supporting element, and a fourth transistor die supporting element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a tie bar, a low voltage IC, a high voltage IC, a plurality of leads, a first slanted section, a second slanted section, a third slanted section, a fourth slanted section, a fifth slanted section, and a molding encapsulation. A respective bottom surface of each of the first, second, third, and fourth transistor die supporting elements are exposed from the molding encapsulation.