Power semiconductor module
Latest ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP Patents:
Description
The broken lines are shown for environmental purposes only and form no part of the claimed design.
All surfaces not shown form no part of the claimed design.
Claims
The ornamental design for a power semiconductor module, as shown and as described.
Referenced Cited
U.S. Patent Documents
Other references
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- IGBT Module PIM,https://www.fujielectric.com/products/semiconductor/model/igbt/pim.html,2023. (Year: 2023).
- FS820R08A6P2BBPSA1,https://www.mouser.com/ProductDetail/Infineon-Technologies/FS820R08A6P2BBPSA1?qs=%252BbzPfv9VPAH4B6v94SM3qg%3D%3D&mgh=1&gclid=EAlalQobChMIrO3dl8iOgAMVDi3UAR2mgQMbEAkYAiABEgKdZfD_BwE,Copyright © 2023 Mouser Electronics, Inc. (Year: 2023).
Patent History
Patent number: D1042375
Type: Grant
Filed: May 12, 2022
Date of Patent: Sep 17, 2024
Assignee: ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP (Toronto)
Inventors: Zhiqiang Niu (Santa Clara, CA), Bum-Seok Suh (Seongnam), Jong-Mu Lee (Yongin-si), Jia-long Yuan (Shanghai), Junho Lee (Suwon-si), Xiaorong Ge (Pleasanton, CA)
Primary Examiner: Elizabeth J Oswecki
Application Number: 29/838,478
Type: Grant
Filed: May 12, 2022
Date of Patent: Sep 17, 2024
Assignee: ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP (Toronto)
Inventors: Zhiqiang Niu (Santa Clara, CA), Bum-Seok Suh (Seongnam), Jong-Mu Lee (Yongin-si), Jia-long Yuan (Shanghai), Junho Lee (Suwon-si), Xiaorong Ge (Pleasanton, CA)
Primary Examiner: Elizabeth J Oswecki
Application Number: 29/838,478
Classifications
Current U.S. Class:
Semiconductor, Transistor Or Integrated Circuit (24) (D13/182)