Abstract: A method for manufacturing a TFT substrate is disclosed. The TFT substrate includes a drive TFT region and a display TFT region. The drive TFT region and the display TFT region are manufactured with different technologies, so that different requirements for TFT can be met. The manufacturing method according to the present disclosure mainly includes: forming a first amorphous silicon layer to obtain a drive TFT region; forming a second amorphous silicon layer to obtain a display TFT region; and then depositing a passivation layer and a flat layer, so that the TFT substrate is manufactured after following treatment steps.

Abstract: The invention provides an OLED panel manufacturing method and OLED panel. The method comprises: forming first (21) and second (22) pixel electrodes inside each pixel unit (2); depositing an insulation film by an atomic layer deposition method, and patternizing to form a pixel electrode isolation insulation layer (3); the pixel electrode isolation insulation layer having a longitudinal portion (31) filling between the first (21) and second (22) pixel electrodes, and a latitudinal portion (32) having both ends covering respectively a part of the first pixel electrode (21) closer to the second pixel electrode (22) and a part of the second pixel electrode (22) closer to the first pixel electrode (21); forming a pixel isolation layer (4), and printing LOED elements (5); the invention can increase OLED panel resolution without changing printing accuracy so that the first (21) and second (22) pixel electrodes are completely insulated.

Abstract: The present invention provides an organic light-emitting display panel and manufacturing method thereof. The method is to use the feature that silicon nitride has more hydrogen atoms, so that the oxide semiconductor in contact with the part of oxide semiconductor pattern layer with conductor characteristics, can be continuously doped with hydrogen atoms to hold conductor characteristics, and the contact impedance between the part of oxide semiconductor pattern layer and the source and the drain can be continuously maintained at a low state to achieve the function of TFT.

Abstract: The invention provides an OLED panel manufacturing method and OLED panel. The method comprises: forming first (21) and second (22) pixel electrodes inside each pixel unit (2); depositing an insulation film by an atomic layer deposition method, and patternizing to form a pixel electrode isolation insulation layer (3); the pixel electrode isolation insulation layer having a longitudinal portion (31) filling between the first (21) and second (22) pixel electrodes, and a latitudinal portion (32) having both ends covering respectively a part of the first pixel electrode (21) closer to the second pixel electrode (22) and a part of the second pixel electrode (22) closer to the first pixel electrode (21); forming a pixel isolation layer (4), and printing LOED elements (5); the invention can increase OLED panel resolution without changing printing accuracy so that the first (21) and second (22) pixel electrodes are completely insulated.

Abstract: The present invention provides a manufacture method of an AMOLED pixel driving circuit. The method utilizes the oxide semiconductor thin film transistor to be the switch thin film transistor of the AMOLED pixel driving circuit to reduce the leakage current of the switch thin film transistor, and the P type polysilicon thin film transistor manufactured by utilizing the Solid Phase Crystallization is employed to be the drive thin film transistor of the AMOLED pixel driving circuit to promote the mobility, the equality and the reliability of the drive thin film transistor, and utilizing the P type thin film transistor to be the drive thin film transistor can form the constant current type OLED element, which is more stable than the source follower type OLED formed by the N type thin film transistor, and meanwhile, the parasitic capacitance is decreased with the top gate structure.

Abstract: The present invention provides a manufacture method of an AMOLED pixel driving circuit. The method utilizes the oxide semiconductor thin film transistor to be the switch thin film transistor of the AMOLED pixel driving circuit to reduce the leakage current of the switch thin film transistor, and the P type polysilicon thin film transistor manufactured by utilizing the Solid Phase Crystallization is employed to be the drive thin film transistor of the AMOLED pixel driving circuit to promote the mobility, the equality and the reliability of the drive thin film transistor, and utilizing the P type thin film transistor to be the drive thin film transistor can form the constant current type OLED element, which is more stable than the source follower type OLED formed by the N type thin film transistor, and meanwhile, the parasitic capacitance is decreased with the top gate structure.

Abstract: A method for manufacturing a TFT substrate is disclosed. The TFT substrate includes a drive TFT region and a display TFT region. The drive TFT region and the display TFT region are manufactured with different technologies, so that different requirements for TFT can be met. The manufacturing method according to the present disclosure mainly includes: forming a first amorphous silicon layer to obtain a drive TFT region; forming a second amorphous silicon layer to obtain a display TFT region; and then depositing a passivation layer and a flat layer, so that the TFT substrate is manufactured after following treatment steps.

Abstract: A method for manufacturing a LTPS TFT substrate is provided. Buffer layers are respectively provided in a drive TFT area and a display TFT area and have different thicknesses, such that the thickness of the buffer layer in the drive TFT area is larger than the thickness of the buffer layer in the display TFT area so that different temperature grades are formed in a crystallization process of poly-silicon to achieve control of the grain diameters of crystals. A poly-silicon layer that is formed in the drive TFT area in the crystallization process has a large lattice dimension to increase electron mobility thereof. Fractured crystals can be formed in a poly-silicon layer of the display TFT area in the crystallization process for ensuring the uniformity of the grain boundary and increasing the uniformity of electrical current. Accordingly, the electrical property demands for different TFTs can be satisfied.

Abstract: The present invention provides a method for manufacturing a TFT substrate, in which after induced crystallization is conducted by implanting ions into an amorphous silicon layer, there is no need to completely remove the ion induction layer formed on the surface of a poly-silicon layer so obtained and instead, a half-tone mask based operation is applied to remove only a portion of the ion induction layer corresponding to a channel zone and there is no need for re-conducting ion implantation subsequently for source/drain contact zones, thereby saving the mask necessary for re-conducting ion implantation. Further, the source/drain electrodes are also formed with the half-tone mask based operation so as to save the mask necessary for making the source/drain electrodes. Further, the source/drain electrodes are formed first so that the formation of an interlayer insulation layer can be omitted thereby saving the mask necessary for forming the interlayer insulation layer.

Abstract: The present invention provides a Low Temperature Poly-silicon TFT substrate structure and a manufacture method thereof. By providing the buffer layers in the drive TFT area and the display TFT area with different thicknesses, of which the thickness of the buffer layer in the drive TFT area is larger, and the thickness of the buffer layer in the display TFT area is smaller, different temperature grades are formed in the crystallization process of the polysilicon to achieve the control to the grain diameters of the crystals. The polysilicon layer with larger lattice dimension is formed in the drive TFT area in the crystallization process to raise the electron mobility. The fractured crystals of polysilicon layer in the display TFT area can be obtained in the crystallization process for ensuring the uniformity of the grain boundary and raising the uniformity of the current. Accordingly, the electrical property demands for different TFTs can be satisfied to raise the light uniformity of the OLED.

Abstract: The present invention provides a method for manufacturing a TFT substrate, in which after induced crystallization is conducted by implanting ions into an amorphous silicon layer, there is no need to completely remove the ion induction layer formed on the surface of a poly-silicon layer so obtained and instead, a half-tone mask based operation is applied to remove only a portion of the ion induction layer corresponding to a channel zone and there is no need for re-conducting ion implantation subsequently for source/drain contact zones, thereby saving the mask necessary for re-conducting ion implantation. Further, the source/drain electrodes are also formed with the half-tone mask based operation so as to save the mask necessary for making the source/drain electrodes. Further, the source/drain electrodes are formed first so that the formation of an interlayer insulation layer can be omitted thereby saving the mask necessary for forming the interlayer insulation layer.

Abstract: The present invention provides a manufacture method of a TFT backplate and a TFT backplate. By utilizing the oxide semiconductor to manufacture the switch TFT, and utilizing the advantages of rapid switch and lower leakage current of the oxide semiconductor, the switch speed of the switch TFT is raised and the leakage current is lowered; by utilizing the polysilicon to manufacture the drive TFT, and utilizing the properties of higher electron mobility and the uniform grain of the polysilicon, the electron mobility and the current output consistency of the drive TFT is promoted. These are beneficial for the promotion of the light uniformity of the OLED element.

Abstract: The present invention provides a manufacture method of a LTPS thin film transistor and a LTPS thin film transistor. The gate isolation layer is first etched to form the recess, and then the gate is formed on the recess so that the width of the gate is slightly larger than the width of the recess. Then, the active layer is implemented with ion implantation to form the source contact region, the drain contact region, the channel region and one transition region at least located between the drain contact region and the channel region. The gate isolation layer above the transition region is thicker than the channel region and can shield a part of the gate electrical field to make the carrier density here lower than the channel region to form a transition.

Abstract: The disclosure provides a manufacturing method and a structure thereof of a TFT backplane. In the manufacturing method of the TFT backplane, after a polysilicon layer (3?) is formed by implanting a induced ion solid-phase crystallization into an amorphous silicon layer (3), patterning the polysilicon layer using a half-tone mask to form an island active layer (4), and at the same time, etching a upper layer portion (31) with more implanted induced ions located in the middle portion of the island active layer (4) to form a channel region, retaining the upper layer portion (31) with more implanted induced ions located in two sides of the island active layer (4) to form a source/drain contact region, it not only reduces the number of masks, but also saves a process only for implanting doped ion into the source/drain contact region, thereby simplifying the process and reducing production cost.

Abstract: The present invention provides a low temperature polysilicon thin film transistor and a fabricating method thereof. According to the method, a laser annealing process is performed to a remained portion of a a-Si layer on a substrate to form a first lightly doped drain (LDD) terminal, a second LDD terminal, a first phosphor material structure and a second phosphor material structure. A gate metal layer is then formed on the remained portion of the a-Si layer. A source metal layer and a drain metal layer are formed on the first doped layer and the second doped layer located at opposite sides of the gate metal layer, respectively. The present invention use the high temperature of the laser annealing process to perform a heat diffusion of phosphor material to form the LDD terminal and the phosphor material structure, the times of photomasks are used is reduced, and the process is simplified.

Abstract: The present invention provides a manufacture method of a LTPS thin film transistor and a LTPS thin film transistor. The gate isolation layer is first etched to form the recess, and then the gate is formed on the recess so that the width of the gate is slightly larger than the width of the recess. Then, the active layer is implemented with ion implantation to form the source contact region, the drain contact region, the channel region and one transition region at least located between the drain contact region and the channel region. The gate isolation layer above the transition region is thicker than the channel region and can shield a part of the gate electrical field to make the carrier density here lower than the channel region to form a transition.

Abstract: The disclosure provides a manufacturing method and a structure thereof of a TFT backplane. In the manufacturing method of the TFT backplane, after a polysilicon layer (3?) is formed by implanting a induced ion solid-phase crystallization into an amorphous silicon layer (3), patterning the polysilicon layer using a half-tone mask to form an island active layer (4), and at the same time, etching a upper layer portion (31) with more implanted induced ions located in the middle portion of the island active layer (4) to form a channel region, retaining the upper layer portion (31) with more implanted induced ions located in two sides of the island active layer (4) to form a source/drain contact region, it not only reduces the number of masks, but also saves a process only for implanting doped ion into the source/drain contact region, thereby simplifying the process and reducing production cost.

Abstract: The present invention provides a Low Temperature Poly-silicon TFT substrate structure and a manufacture method thereof. By providing the amorphous silicon layers in the drive TFT area and the display TFT area with different thicknesses, of which the thickness of the amorphous silicon layer in the drive TFT area is smaller, and the thickness of the amorphous silicon layer in the display TFT area is larger, and thus, in the Excimer Laser Annealing process, different crystallization results are generated with the amorphous silicon layers in the drive TFT area and the display TFT area under the function of the laser with the same energy to achieve the control to the grain diameters of the crystals. The polysilicon layer with larger lattice dimension is formed in the drive TFT area in the crystallization process to raise the electron mobility.

Abstract: The present invention provides a Low Temperature Poly-silicon TFT substrate structure and a manufacture method thereof. By providing the buffer layers in the drive TFT area and the display TFT area with different thicknesses, of which the thickness of the buffer layer in the drive TFT area is larger, and the thickness of the buffer layer in the display TFT area is smaller, different temperature grades are formed in the crystallization process of the polysilicon to achieve the control to the grain diameters of the crystals. The polysilicon layer with larger lattice dimension is formed in the drive TFT area in the crystallization process to raise the electron mobility. The fractured crystals of polysilicon layer in the display TFT area can be obtained in the crystallization process for ensuring the uniformity of the grain boundary and raising the uniformity of the current. Accordingly, the electrical property demands for different TFTs can be satisfied to raise the light uniformity of the OLED.

Abstract: The present invention seeks to protect Applicant's HYTORC® Z® System which involves: tools having multi-speed/multi-torque modes with torque multiplication and vibration mechanisms without use of external reaction abutments; a force transfer means to yield in-line co-axial action and reaction for use with such tools; driving means and shifting means capable of attaching to washers under the nut for use with such tools and force transfer means; associated washers for use with such tools, force transfer means and driving means; and related accessories for use with such tools, force transfer means, driving means and washers.