Abstract: Package structures are provided having antenna-in-packages that are integrated with semiconductor RFIC (radio frequency integrated circuit) chips to form compact integrated radio/wireless communications systems that operate in the millimeter wave (mm Wave) frequency range with radiation in broadside and end-fire directions.

Abstract: A structure and method for manufacturing the same for manufacturing a contact structure for microelectronics manufacturing including the steps of forming first and second metal sheets to form a plurality of outwardly extending bump each defining a cavity. Symmetrically mating the first and second metal sheets in opposing relation to each other to form upper and lower bumps each defining an enclosure therebetween wherein the mated first and second sheets form a contact structure. Coating the contact structure with an insulating material, and fabricating helix shaped contacts from upper and lower bumps. The helix shaped contacts having first and second portions being in mirror image relationship to each other.

Abstract: Circuits for shielding devices from electromagnetic coupling with through-silicon vias are shown that include a substrate having a through via, which provides access to a device layer on a first surface of the circuit to a device layer on a second surface of the circuit; a conductive layer on the first side of the substrate; a contact point on one of the device layers; and a grounded buried interface tie on the conductive layer, adjacent to the contact point, to isolate the contact point from coupling noise.

Abstract: A method of providing signal, power and ground through a through-silicon-via (TSV), and an integrated circuit chip having a TSV that simultaneously provides signal, power and ground. In one embodiment, the method comprises forming a TSV through a semiconductor substrate, including forming a via in the substrate; and forming a multitude of conductive bars in the via. The multitude of conductive bars include at least one signal bar, at least one power bar, and at least one ground bar. The method further comprises connecting the at least one power bar to a power voltage source to apply power through the TSV; connecting the at least one ground bar to a ground voltage; and connecting the at least one signal bar to a source of an electronic signal to conduct the signal through the TSV and to form a hybrid power-ground-signal TSV in the substrate.

Abstract: A method of providing signal, power and ground through a through-silicon-via (TSV), and an integrated circuit chip having a TSV that simultaneously provides signal, power and ground. In one embodiment, the method comprises forming a TSV through a semiconductor substrate, including forming a via in the substrate; and forming a multitude of conductive bars in the via. The multitude of conductive bars include at least one signal bar, at least one power bar, and at least one ground bar. The method further comprises connecting the at least one power bar to a power voltage source to apply power through the TSV; connecting the at least one ground bar to a ground voltage; and connecting the at least one signal bar to a source of an electronic signal to conduct the signal through the TSV and to form a hybrid power-ground-signal TSV in the substrate.

Abstract: A method of providing signal, power and ground through a through-silicon-via (TSV), and an integrated circuit chip having a TSV that simultaneously provides signal, power and ground. In one embodiment, the method comprises forming a TSV through a semiconductor substrate, including forming a via in the substrate; and forming a multitude of conductive bars in the via. The multitude of conductive bars include at least one signal bar, at least one power bar, and at least one ground bar. The method further comprises connecting the at least one power bar to a power voltage source to apply power through the TSV; connecting the at least one ground bar to a ground voltage; and connecting the at least one signal bar to a source of an electronic signal to conduct the signal through the TSV and to form a hybrid power-ground-signal TSV in the substrate.

Abstract: A structure and method for manufacturing the same for manufacturing a contact structure for microelectronics manufacturing including the steps of forming first and second metal sheets to form a plurality of outwardly extending bump each defining a cavity. Symmetrically mating the first and second metal sheets in opposing relation to each other to form upper and lower bumps each defining an enclosure therebetween wherein the mated first and second sheets form a contact structure. Coating the contact structure with an insulating material, and fabricating helix shaped contacts from upper and lower bumps. The helix shaped contacts having first and second portions being in minor image relationship to each other.

Abstract: Circuits for shielding devices from electromagnetic coupling with through-silicon vias are shown that include a substrate having a through via, which provides access to a device layer on a first surface of the circuit to a device layer on a second surface of the circuit; a conductive layer on the first side of the substrate; a contact point on one of the device layers; and a grounded buried interface tie on the conductive layer, adjacent to the contact point, to isolate the contact point from coupling noise.

Abstract: A structure and method for manufacturing the same for manufacturing a contact structure for microelectronics manufacturing including the steps of forming first and second metal sheets to form a plurality of outwardly extending bump each defining a cavity. Symmetrically mating the first and second metal sheets in opposing relation to each other to form upper and lower bumps each defining an enclosure therebetween wherein the mated first and second sheets form a contact structure. Coating the contact structure with an insulating material, and fabricating helix shaped contacts from upper and lower bumps. The helix shaped contacts having first and second portions being in minor image relationship to each other.

Abstract: A contact structure and assembly and a method for manufacturing the same for a microelectronics device includes first and second electrically conductive contacts being helically shaped. A carrier element is attached to and positioned between the first and second contacts. The first and second contacts are in electrical communication with each other, and the first and second contacts are in a mirror image relationship with each other. A pair of insulating substrates each include electrically conductive members. A contact point on each of the first and second contacts is attached and electrically communicating to respective electrically conductive members such that the first and second electrically conductive contacts between the pair of insulating substrates form an electrically conductive package. A metal layer on the carrier element provides electrical conductivity through a first opening defined by the carrier element between the first and second portions of the helix shaped contact.

Abstract: A contact structure and assembly and a method for manufacturing the same for a microelectronics device includes first and second electrically conductive contacts being helically shaped. A carrier element is attached to and positioned between the first and second contacts. The first and second contacts are in electrical communication with each other, and the first and second contacts are in a mirror image relationship with each other. A pair of insulating substrates each include electrically conductive members. A contact point on each of the first and second contacts is attached and electrically communicating to respective electrically conductive members such that the first and second electrically conductive contacts between the pair of insulating substrates form an electrically conductive package. A metal layer on the carrier element provides electrical conductivity through a first opening defined by the carrier element between the first and second portions of the helix shaped contact.

Abstract: A contact structure and assembly and a method for manufacturing the same for a microelectronics device includes first and second electrically conductive contacts being helically shaped. A carrier element is attached to and positioned between the first and second contacts. The first and second contacts are in electrical communication with each other, and the first and second contacts are in a mirror image relationship with each other. A pair of insulating substrates each include electrically conductive members. A contact point on each of the first and second contacts is attached and electrically communicating to respective electrically conductive members such that the first and second electrically conductive contacts between the pair of insulating substrates form an electrically conductive package. A metal layer on the carrier element provides electrical conductivity through a first opening defined by the carrier element between the first and second portions of the helix shaped contact.

Abstract: A structure and method for manufacturing the same for manufacturing a contact structure for microelectronics manufacturing including the steps of forming first and second metal sheets to form a plurality of outwardly extending bump each defining a cavity. Symmetrically mating the first and second metal sheets in opposing relation to each other to form upper and lower bumps each defining an enclosure therebetween wherein the mated first and second sheets form a contact structure. Coating the contact structure with an insulating material, and fabricating helix shaped contacts from upper and lower bumps. The helix shaped contacts having first and second portions being in mirror image relationship to each other.