Abstract: A CMOS imaging sensor structure and a manufacturing method therefor. The CMOS imaging sensor structure comprises a pixel unit of the CMOS imaging sensor set on a semiconductor substrate, the pixel unit comprises a circuit device region and a first photosensitive region, the circuit device region is set on the frontside of the semiconductor substrate, the first photosensitive region is set correspondingly in the semiconductor substrate below the circuit device region, the circuit device region is isolated from the first photosensitive region by an isolation region, and the circuit device region is electrical connected with the first photosensitive region through a conductive trench, a fill factor of a photosensitive region is increased, and performances of a reading circuit is increased by a more optimized design scheme.

Abstract: The present invention discloses a method for forming an intermetallic air gap, which comprises following steps: S01: forming a trench in a solid dielectric; S02: preparing an insulating sheet-like two-dimensional material, wherein the insulating sheet-like two-dimensional material comprises an insulating nano sheet-like layer, the size of the insulating nano sheet-like layer in the sheet-like two-dimensional direction is greater than the size of the trench; S03: the insulating sheet-like two-dimensional material is deposited on the solid dielectric and the trench; S04: annealing the solid dielectric and the insulating sheet-like two-dimensional material to form a stable thin film composed of insulating sheet-like two-dimensional material on the trench.

Abstract: The present disclosure relates to an image sensor structure and a manufacturing method thereof. A detection structure layer and a blind pixel structure layer are used. The detection structure layer and the blind pixel structure layer are effectively combined and further formed by ion implantation. Thus, the space ratio of a single pixel is reduced, the integration and device sensitivity are improved, and the blind pixel array and the pixel array are also in the same environment, thereby further improving the detection sensitivity and reducing the detection error.

Abstract: The present disclosure relates to an apparatus and a method for improving film thickness uniformity, wherein a PECVD machine with twin chambers comprise a wafer heating platform, which is set to be a rotating platform with programmable speed control, by setting rotating speed of the platform, wafer is rotated for integral rounds within process time, so that a RF overlap between the twin chambers make consistent influence on edge regions of the wafer, and film around the wafer is evenly distributed, which not only eliminate abrupt change of film thickness caused by the RF overlap, but also reduce film thickness differences between edge regions and central regions of the film by a characteristic that the RF overlap improves film deposition rate, so as to ensure the film thickness more evenly in the range of the whole wafer.

Abstract: The present invention disclosures a recessed structure capable of being conveniently monitored online, wherein comprising a dielectric layer I, and a dielectric layer II positioned above the dielectric layer I, the dielectric layer I comprises a metal via layer and a metal contact layer, the metal contact layer is positioned above the metal via layer; the dielectric layer II comprises an inverted trapezoid groove positioned above the metal contact layer, the inverted trapezoid groove has inclined sidewall, and the horizontal cross-sectional area of the inverted trapezoid groove far away from the metal contact layer is larger than the horizontal cross-sectional area of the inverted trapezoid groove close to the metal contact layer; the inclined sidewall is covered with a reflective film.

Abstract: The present disclosure relates to an image sensor structure and a manufacturing method thereof. A detection structure layer and a blind pixel structure layer are used. The detection structure layer and the blind pixel structure layer are effectively combined and further formed by ion implantation. Thus, the space ratio of a single pixel is reduced, the integration and device sensitivity are improved, and the blind pixel array and the pixel array are also in the same environment, thereby further improving the detection sensitivity and reducing the detection error.

Abstract: The present invention discloses a method for forming an intermetallic air gap, which comprises following steps: S01: forming a trench in a solid dielectric; S02: preparing an insulating sheet-like two-dimensional material, wherein the insulating sheet-like two-dimensional material comprises an insulating nano sheet-like layer, the size of the insulating nano sheet-like layer in the sheet-like two-dimensional direction is greater than the size of the trench; S03: the insulating sheet-like two-dimensional material is deposited on the solid dielectric and the trench; S04: annealing the solid dielectric and the insulating sheet-like two-dimensional material to form a stable thin film composed of insulating sheet-like two-dimensional material on the trench.

Abstract: The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process.

Abstract: The present disclosure provided an infrared detector having a vertical sidewall sensitive layer and a manufacturing method thereof. By forming at least one fin structure on a semiconductor substrate; and a sensitive layer can be formed on the sidewall of the fin structure by ion implantation. The vertical sidewall sensitive layer is configured to reduce the impact of lithography on the sensitive layer, thereby reducing the impact on the sensitivity of the sensitive layer (03).

Abstract: The present disclosure relates to an image sensor structure and a manufacturing method thereof. A detection structure layer and a blind pixel structure layer are used. The detection structure layer and the blind pixel structure layer are effectively combined and further formed by ion implantation. Thus, the space ratio of a single pixel is reduced, the integration and device sensitivity are improved, and the blind pixel array and the pixel array are also in the same environment, thereby further improving the detection sensitivity and reducing the detection error.

Abstract: The present disclosure discloses a small-size infrared sensor structure and a manufacturing method therefor. Trench is etched in a conductive beam region, and the conductive beam is formed by the sidewall of the trench, so that the small-size infrared sensor structure with adjacent pixel structures can share one conductive support hole, thereby improving integration degree of the pixels, enlarging the regions of the infrared detection regions of the pixels, and improving infrared detection efficiency.

Abstract: The invention provided an ion implantation system. The ion implantation system comprises an ion emitting device and a target plate device; the target plate device comprises a graphite electrode unit and a power supply unit; the graphite electrode unit is mounted on the lower end of a support frame, and the graphite electrode unit is a hollow structure; the graphite electrode unit comprises a graphite electrode and a hollow region I, the graphite electrode is connected to the power supply unit; the area of the hollow region I is smaller than that of the wafer to be processed, and the sum of the area of the graphite electrode and the area of the hollow region I is larger than an implantation area of the ion beam.

Abstract: The present invention provides an infrared detector pixel structure and manufacturing method thereof.

Abstract: The present disclosure relates to an image sensor structure and a manufacturing method thereof. A detection structure layer and a blind pixel structure layer are used. The detection structure layer and the blind pixel structure layer are effectively combined and further formed by ion implantation. Thus, the space ratio of a single pixel is reduced, the integration and device sensitivity are improved, and the blind pixel array and the pixel array are also in the same environment, thereby further improving the detection sensitivity and reducing the detection error.

Abstract: The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process.

Abstract: The present disclosure relates to an apparatus and a method for improving film thickness uniformity, wherein a PECVD machine with twin chambers comprise a wafer heating platform, which is set to be a rotating platform with programmable speed control, by setting rotating speed of the platform, wafer is rotated for integral rounds within process time, so that a RF overlap between the twin chambers make consistent influence on edge regions of the wafer, and film around the wafer is evenly distributed, which not only eliminate abrupt change of film thickness caused by the RF overlap, but also reduce film thickness differences between edge regions and central regions of the film by a characteristic that the RF overlap improves film deposition rate, so as to ensure the film thickness more evenly in the range of the whole wafer.

Abstract: The present invention provides an infrared detector pixel structure and manufacturing method thereof. The bottom portion of a silicon substrate is bonded with a bonding substrate, an infrared absorbing layer in the bonding substrate is used for absorbing a part of infrared light, a closed cavity filled with infrared-sensitive gas is set in the silicon substrate, and a piezoelectric transforming unit is bonded onto the closed cavity. When the infrared-sensitive gas absorbs the infrared light to expand, the infrared sensitive gas will press the piezoelectric transforming unit, which causes piezoelectric signal generated by the piezoelectric transforming unit to be changed, thereby achieving the detection on the infrared light.

Abstract: The invention provided an ion implantation system. The ion implantation system comprises an ion emitting device and a target plate device; the target plate device comprises a graphite electrode unit and a power supply unit; the graphite electrode unit is mounted on the lower end of a support frame, and the graphite electrode unit is a hollow structure; the graphite electrode unit comprises a graphite electrode and a hollow region I, the graphite electrode is connected to the power supply unit; the area of the hollow region I is smaller than that of the wafer to be processed, and the sum of the area of the graphite electrode and the area of the hollow region I is larger than an implantation area of the ion beam.

Abstract: The present invention provides an infrared pixel structure and a hybrid imaging device which use comb-shaped top plates and bottom plates to form capacitors. The upper electrode has a non-fixed end such that the infrared sensitive element in the upper electrode generates thermal stress and deforms when absorbing the infrared light, which changes the capacitance of the capacitors formed by the top plates and the bottom plates to achieve infrared detection and increase the device sensitivity. Furthermore, the infrared pixel structure can be used in an infrared light and visible light hybrid imaging device to achieve visible light imaging and infrared imaging in a same silicon substrate, so as to increase the imaging quality.

Abstract: One variation of a method for tracking user satisfaction, recovery, training progress, and outcomes during a recovery and wellness regimen includes: generating a user profile of a user based on user information entered through a user portal; associating the user with a subset of users in a user population based on similarities between the user profile and user profiles of the subset of users; assigning data input types, user check-in schedules, training tasks, and schedules to the user during a recovery and wellness regimen based on historical data from the subset of users; transmitting prompts to the user based on the data input types, user check-in schedules, training plans and schedules; updating the user profile based on responses to the prompts; and notifying a care provider affiliated with the user in response to negative deviation of the user profile from user profiles of patients in the subset of users.