Abstract: Systems for non-contact imaging measurement of blood oxygen saturation and perfusion in a sample are provided including a control unit configured to facilitate acquisition of data from a sample; a data acquisition module coupled to the control unit, the data acquisition module configured to illuminate a field of view (FOV) of the sample using a plurality of wavelengths to provide a plurality of images corresponding to each of the plurality of wavelengths responsive to control signals from the control unit; and an image processing module configured calculate image saturation parameters and reflectance for each of the plurality of images having a unique acquisition time and unique wavelength and extracting blood volume and oxygen saturation data in the FOV using the calculated image saturation parameters and reflectance for each of the plurality of images having a unique acquisition time and unique wavelength.

Abstract: Provided are a fluorescent probe, a preparation method therefor and a use thereof. The fluorescent probe responds to viscosity sensitively and specifically, can be used for the specific fluorescence labeling of proteins and can also be used in the quantification, detection or kinetic study of proteins and the imaging of cells, tissues and living bodies.

Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.

Abstract: A method for forming a pellicle apparatus involves forming a device substrate by depositing one or more pellicle layers defined over a base device layer, where a release layer is formed thereover. An adhesive layer is formed over a transparent carrier substrate. The adhesive layer is bonded to the release layer, defining a composite substrate comprised of the device and carrier substrates. The base device layer is removed from the composite structure and a pellicle frame is attached to an outermost one of the pellicle layers. A pellicle region is isolated from a remainder of the composite structure, and an ablation of the release layer is performed through the transparent carrier substrate, defining the pellicle apparatus comprising a pellicle film attached to the pellicle frame. The pellicle apparatus is then from a remaining portion of the composite substrate.

Abstract: An apparatus and method is provided for controlling a propagation of a bond wave during semiconductor processing. The apparatus has a first chuck to selectively retain a first workpiece. A second chuck selectively retains a second workpiece. The first and second chucks selectively secure at least a periphery of the respective first workpiece and second workpiece. An air vacuum is circumferentially located in a region between the first chuck and second chuck. The air vacuum is configured to induce a vacuum between the first workpiece and second workpiece to selectively bring the first workpiece and second workpiece together from a propagation point. The air vacuum can be localized air vacuum guns, a vacuum disk, or an air curtain positioned about the periphery of the region between the first chuck and second chuck. The air curtain induces a lower pressure within the region between the first and second chucks.

Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.

Abstract: A method for forming a pellicle apparatus involves forming a device substrate by depositing one or more pellicle layers defined over a base device layer, where a release layer is formed thereover. An adhesive layer is formed over a transparent carrier substrate. The adhesive layer is bonded to the release layer, defining a composite substrate comprised of the device and carrier substrates. The base device layer is removed from the composite structure and a pellicle frame is attached to an outermost one of the pellicle layers. A pellicle region is isolated from a remainder of the composite structure, and an ablation of the release layer is performed through the transparent carrier substrate, defining the pellicle apparatus comprising a pellicle film attached to the pellicle frame. The pellicle apparatus is then from a remaining portion of the composite substrate.

Abstract: An apparatus and method is provided for controlling a propagation of a bond wave during semiconductor processing. The apparatus has a first chuck to selectively retain a first workpiece. A second chuck selectively retains a second workpiece. The first and second chucks selectively secure at least a periphery of the respective first workpiece and second workpiece. An air vacuum is circumferentially located in a region between the first chuck and second chuck. The air vacuum is configured to induce a vacuum between the first workpiece and second workpiece to selectively bring the first workpiece and second workpiece together from a propagation point. The air vacuum can be localized air vacuum guns, a vacuum disk, or an air curtain positioned about the periphery of the region between the first chuck and second chuck. The air curtain induces a lower pressure within the region between the first and second chucks.

Abstract: A beam of a gantry-type stage structure includes an accommodating space defined by a lower plate, an upper plate, a front plate, a rear plate and two lateral plates. A truss unit is disposed in the accommodating space, and includes lower and upper joint members which are respectively disposed on the lower and upper plates, first and second vertical members which extend uprightly from the lower and upper joint members, respectively, and diagonal members each of which extends to interconnect one lower joint member and an adjacent upper joint member to provide the beam with a great structural strength and a lightweight structure.

Abstract: A method of semiconductor wafer bonding and system thereof are proposed. A first alignment mark of a first semiconductor wafer is aligned with a second alignment mark of a second semiconductor wafer. A partial attachment is performed between the first semiconductor wafer and the second semiconductor wafer. A scanning is performed along a direction substantially parallel to a surface of the first semiconductor wafer. It is determined if a bonding defect of the partially attached first semiconductor wafer and the second semiconductor wafer exists.

Abstract: A beam of a gantry-type stage structure includes an accommodating space defined by a lower plate, an upper plate, a front plate, a rear plate and two lateral plates. A truss unit is disposed in the accommodating space, and includes lower and upper joint members which are respectively disposed on the lower and upper plates, first and second vertical members which extend uprightly from the lower and upper joint members, respectively, and diagonal members each of which extends to interconnect one lower joint member and an adjacent upper joint member to provide the beam with a great structural strength and a lightweight structure.

Abstract: A pericardium puncture needle assembly includes a puncture needle and a guide wire capable of sliding in the puncture needle; or includes an outer sleeve and a guide wire capable of sliding in the outer sleeve; or includes an outer sleeve and a puncture needle and a guide wire capable of sliding in the outer sleeve, wherein after the puncture needle is pulled out of the outer sleeve, the guide wire is capable of sliding in the outer sleeve. The guide wire is made of a highly elastic material and includes a far-end bent segment. The far-end bent segment is formed by bending the guide wire and has a preset bending shape, and is suitable for being recovered from a stretching state to the preset bending shape. The tip of the far-end bent segment has a pointed structure.

Abstract: Hybrid bonding systems and methods for semiconductor wafers are disclosed. In one embodiment, a hybrid bonding system for semiconductor wafers includes a chamber and a plurality of sub-chambers disposed within the chamber. A robotics handler is disposed within the chamber that is adapted to move a plurality of semiconductor wafers within the chamber between the plurality of sub-chambers. The plurality of sub-chambers includes a first sub-chamber adapted to remove a protection layer from the plurality of semiconductor wafers, and a second sub-chamber adapted to activate top surfaces of the plurality of semiconductor wafers prior to hybrid bonding the plurality of semiconductor wafers together. The plurality of sub-chambers also includes a third sub-chamber adapted to align the plurality of semiconductor wafers and hybrid bond the plurality of semiconductor wafers together.

Abstract: Provided are a fluorescent probe and a preparation process and the use thereof. The fluorescent probe is sensitive and specific to viscosity, and can be used for specific fluorescent labeling of proteins, and can also be used for quantification, detection or kinetic studies of proteins, and the imaging of cells, tissues and living bodies.

Abstract: A method of fabricating a semiconductor device includes providing a first substrate comprising a first conductive element exposed at a surface of the first substrate; forming a patterned photoresist layer atop the first conductive element, whereby the patterned photoresist layer provides openings exposing the first conductive element; forming a first metal layer in the openings and directly atop the first conductive element; forming a first insulator layer over the first metal layer and the first substrate; and polishing the first metal layer and the first insulator layer, resulting in a first interface surface over the first substrate wherein the first interface surface includes part of the first metal layer and the first insulator layer.

Abstract: A pericardium puncture needle assembly comprises a puncture needle (12) and a guide wire (13) capable of sliding in the puncture needle (12); or comprises an outer sleeve (22) and a guide wire (13) capable of sliding in the outer sleeve (22); or comprises an outer sleeve (22) and a puncture needle (12) and a guide wire (13) capable of sliding in the outer sleeve (22), wherein after the puncture needle (12) is pulled out of the outer sleeve (22), the guide wire (13) is capable of sliding in the outer sleeve (22). The guide wire (13) is made of a highly elastic material and comprises a far-end bent segment (32). The far-end bent segment (32) is formed by bending the guide wire (13) and has a preset bending shape, and is suitable for being recovered from a stretching state to the preset bending shape. The tip of the far-end bent segment has a pointed structure.

Abstract: A method for forming a pellicle apparatus involves forming a device substrate by depositing one or more pellicle layers defined over a base device layer, where a release layer is formed thereover. An adhesive layer is formed over a transparent carrier substrate. The adhesive layer is bonded to the release layer, defining a composite substrate comprised of the device and carrier substrates. The base device layer is removed from the composite structure and a pellicle frame is attached to an outermost one of the pellicle layers. A pellicle region is isolated from a remainder of the composite structure, and an ablation of the release layer is performed through the transparent carrier substrate, defining the pellicle apparatus comprising a pellicle film attached to the pellicle frame. The pellicle apparatus is then from a remaining portion of the composite substrate.

Abstract: An apparatus and method is provided for controlling a propagation of a bond wave during semiconductor processing. The apparatus has a first chuck to selectively retain a first workpiece. A second chuck selectively retains a second workpiece. The first and second chucks selectively secure at least a periphery of the respective first workpiece and second workpiece. An air vacuum is circumferentially located in a region between the first chuck and second chuck. The air vacuum is configured to induce a vacuum between the first workpiece and second workpiece to selectively bring the first workpiece and second workpiece together from a propagation point. The air vacuum can be localized air vacuum guns, a vacuum disk, or an air curtain positioned about the periphery of the region between the first chuck and second chuck. The air curtain induces a lower pressure within the region between the first and second chucks.

Abstract: Hybrid bonding systems and methods for semiconductor wafers are disclosed. In one embodiment, a hybrid bonding system for semiconductor wafers includes a chamber and a plurality of sub-chambers disposed within the chamber. A robotics handler is disposed within the chamber that is adapted to move a plurality of semiconductor wafers within the chamber between the plurality of sub-chambers. The plurality of sub-chambers includes a first sub-chamber adapted to remove a protection layer from the plurality of semiconductor wafers, and a second sub-chamber adapted to activate top surfaces of the plurality of semiconductor wafers prior to hybrid bonding the plurality of semiconductor wafers together. The plurality of sub-chambers also includes a third sub-chamber adapted to align the plurality of semiconductor wafers and hybrid bond the plurality of semiconductor wafers together.

Abstract: A semiconductor structure may include a first device having first surface with a first bonding layer formed thereon and a second device having a first surface with a second bonding layer formed thereon. The first bonding layer may provide an electrically conductive path to at least one electrical device in the first device. The second bonding layer may provide an electrically conductive path to at least one electrical device in the second device. One of the first or the second devices may include MEMS electrical devices. The first and/or the second bonding layers may be formed of a getter material, which may provide absorption for outgassing.