Abstract: A display system including a first set of conductive electrodes, a second set of conductive electrodes, and a display medium. The first set of conductive electrodes is configured to receive a selection signal. The second set of conductive electrodes is configured to interact with the first set of conductive electrodes for activating the reading or writing of display data. The second set of conductive electrodes is configured to receive a data signal and to activate the reading or writing of a target area of the display device, in response to the selection signal to the first set of conductive electrodes and the data signal to the second set of conductive electrodes. The display medium is movably coupled with the first and second sets of conductive electrodes. One or both of the first and the second sets of conductive electrodes have at least two electrically independent regions having an independent signal input for each region.

Abstract: A display system including a first set of conductive electrodes, a second set of conductive electrodes, and a display medium. The first set of conductive electrodes is configured to receive a selection signal. The second set of conductive electrodes is configured to interact with the first set of conductive electrodes for activating the reading or writing of display data. The second set of conductive electrodes is configured to receive a data signal and to activate the reading or writing of a target area of the display device, in response to the selection signal to the first set of conductive electrodes and the data signal to the second set of conductive electrodes. The display medium is movably coupled with the first and second sets of conductive electrodes. One or both of the first and the second sets of conductive electrodes have at least two electrically independent regions having an independent signal input for each region.

Abstract: Methods for calibrating RF power applied to a plurality of RF coils are provided. In some embodiments, a method of calibrating RF power applied to a first and second RF coil of a process chamber having a power divider to control a first ratio equal to a first magnitude of RF power provided to the first RF coil divided by a second magnitude of RF power provided to the second RF coil, may include measuring a plurality of first ratios over a range of setpoint values of the power divider, comparing the plurality of measured first ratios to a plurality of reference first ratios, and adjusting an actual value of the power divider at a given setpoint value such that the first ratio of the power divider at the given setpoint matches the corresponding reference first ratio to within a first tolerance level.

Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.

Abstract: Methods and apparatus for controlling the temperature of a substrate during processing are provided herein. In some embodiments, an apparatus for retaining and controlling substrate temperature may include a puck of dielectric material; an electrode disposed in the puck proximate a surface of the puck upon which a substrate is to be retained; and a plurality of heater elements disposed in the puck and arranged in concentric rings to provide independent temperature control zones.

Abstract: The present invention relates to methods, apparatuses, and computer program products for providing secure access for a user or terminal to a network, wherein an intermediate authentication node is authorized to listen to and store authentication related information. When an authentication request is received, the stored authentication related information is checked and the user or terminal is authenticated if a match between authentication related information of the authentication request and the stored authentication related information is determined, and an authentication server responsible for the authentication request is notified about the authentication result.

Abstract: A plurality of integrated circuits in a system, each having a program memory loaded with different sections of a program, and a second memory. The integrated circuits perform the program, such that, when one of the integrated circuits requires a portion of the program, which is contained in its own program memory, it extracts it from the program memory and uses it, but when it requires a portion of the program, which is not contained in its own program memory, it reads it from the program memory of one of the other integrated circuits into its second memory and runs that portion of the program from there. In one example, the system is a line card, and the program is specific to one DSL protocol.

Abstract: A plurality of integrated circuits in a system, each having a program memory loaded with different sections of a program, and a second memory. The integrated circuits perform the program, such that, when one of the integrated circuits requires a portion of the program, which is contained in its own program memory, it extracts it from the program memory and uses it, but when it requires a portion of the program, which is not contained in its own program memory, it reads it from the program memory of one of the other integrated circuits into its second memory and runs that portion of the program from there. In one example, the system is a line card, and the program is specific to one DSL protocol.

Abstract: A display system including a first set of conductive electrodes, a second set of conductive electrodes, and a display medium. The first set of conductive electrodes is configured to receive a selection signal. The second set of conductive electrodes is configured to interact with the first set of conductive electrodes for activating the reading or writing of display data. The second set of conductive electrodes is configured to receive a data signal and to activate the reading or writing of a target area of the display device, in response to the selection signal to the first set of conductive electrodes and the data signal to the second set of conductive electrodes. The display medium is movably coupled with the first and second sets of conductive electrodes. One or both of the first and the second sets of conductive electrodes have at least two electrically independent regions having an independent signal input for each region.

Abstract: A method for forming a poly-silicon film, using sequential lateral solidification (SLS) by laser irradiation through an optical device to pattern the laser beam and provide a periodic energy profile on the edges of transparent regions so as to widen the poly-silicon grains and achieve grain size uniformity. The optical device comprises a plurality of first transparent regions with a length of L, wherein at least one side of the edge of each of the first transparent regions has a first periodic shape.

Abstract: An information display system for a conveying device, the information display system comprising a driving mechanism, a flexible display loop driven by the driving mechanism to travel in a closed loop, and an image forming module configured to provide media to at least a section of the flexible display loop.

Abstract: A method and a device for forming a poly-silicon film, using sequential lateral solidification (SLS) by laser irradiation through an optical device to pattern the laser beam so as to lengthen the crystalline grains and enhance the throughput. The optical device comprises a plurality of first transparent regions, a plurality of second transparent regions and a plurality of final transparent regions. The plurality of second transparent regions are disposed between the plurality of first transparent regions and the plurality of final transparent regions. The first transparent regions and the second transparent regions have a first width W1 and a first length L1, and the final transparent regions have a second width W2 and a second length L2. An mth first transparent region of the plurality of first transparent regions and an mth second transparent region of the plurality of second transparent regions are arranged in a tier-shape.

Abstract: A display unit comprises a display medium which is writable, erasable and displayable of an image and a rotatable writehead with a number of loop conductors parallel with each other. The display medium is capable of maintaining a written image without power. In operating of writing on the display medium, the loop conductors apply an electric field to a particular area of the display medium, changing the optical state of the particular area of the display medium. In operating of writing on the display medium, there is no relative motion between the display medium and the writehead.

Abstract: A method for fabricating a semiconductor device includes providing a substrate, forming an amorphous silicon layer over the substrate, forming a heat retaining layer on the amorphous silicon layer, patterning the heat retaining layer, and irradiating the patterned heat retaining layer.

Abstract: A mask suitable for SLS laser crystallization includes a transparent substrate with a mask pattern thereon. The mask pattern includes a first region pattern and a second region pattern in mirror symmetry. When a laser beam irradiates on the mask to form a scanning region, the area of the scanning region is smaller than that of the mask pattern. The area of the mask pattern is larger than that of the scanning region of the laser beam. When the laser crystallization process is performed along a first direction, only a partial region on the mask is selected. When the laser crystallization process is performed along a second direction, the other region on the mask is then selected.

Abstract: A heat sink layer is formed on portions of a substrate, and then an amorphous silicon layer is formed thereon. The heat coefficient of the sink layer is greater than that of the substrate. When an excimer laser heats the amorphous silicon layer to crystallize the amorphous silicon, nucleation sites are formed in the amorphous silicon layer on the heat sink layer. Next, laterally expanding crystallization occurs in the amorphous silicon layer on the substrate to form polysilicon having a crystal size of a micrometer.

Abstract: A method of fabricating a semiconductor device includes providing a substrate, forming an amorphous silicon layer over the substrate, forming a patterned heat retaining layer over the amorphous silicon layer, doping the amorphous silicon layer to form a pair of doped regions in the amorphous silicon layer by using the patterned heat retaining layer as a mask, and irradiating the amorphous silicon layer to activate the pair of doped regions, forming a pair of activated regions, and form a crystallized region between the pair of activated regions.

Abstract: A silicon layer and a heat-retaining layer are formed on a substrate in turn, and a laser beam with a sharp energy density gradient is next utilized to perform a laser heating process for inducing super lateral growth crystallization occurred in part of the Si layer. The heat-retaining layer provides additional heating-enhancement function for the Si layer in crystallization so as to increase the super lateral growth length. Then, the laser beam is repeatedly moved to irradiate the substrate to finish the crystallization process for the full substrate.

Abstract: A method and a device for forming a poly-silicon film, using sequential lateral solidification (SLS) by laser irradiation through an optical device to pattern the laser beam so as to lengthen the crystalline grains and enhance the throughput. The optical device comprises a plurality of first transparent regions, a plurality of second transparent regions and a plurality of final transparent regions. The plurality of second transparent regions are disposed between the plurality of first transparent regions and the plurality of final transparent regions. The first transparent regions and the second transparent regions have a first width W1 and a first length L1, and the final transparent regions have a second width W2 and a second length L2. An mth first transparent region of the plurality of first transparent regions and an mth second transparent region of the plurality of second transparent regions are arranged in a tier-shape.

Abstract: A method for crystallizing an amorphous silicon layer is provided. (A) A substrate with an amorphous silicon layer thereon is provided. (B) A mask with a mask pattern is provided. The mask pattern includes a first region pattern and a second region pattern in mirror symmetry. (C) The first region pattern is selected as a first scanning region and the substrate is moved toward a first direction, such that a laser beam passes through the first region pattern to crystallize the amorphous silicon layer along the first direction. (D) The second region pattern is selected as a second scanning region and the substrate is moved toward a second direction, such that the laser beam passes through the second region pattern to crystallize the amorphous silicon layer along the second direction. (E) The steps of (C) and (D) are repeated to convert the whole amorphous silicon layer into a polysilicon layer.