Patents by Inventor Xinjian Lei

Xinjian Lei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods to prepare silicon-containing films
    Patent number: 9502234
    Abstract: Described herein are methods of forming dielectric films such as non-porous dielectric films, comprising silicon, oxide, and optionally nitrogen, carbon, hydrogen, and boron. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer. Specifically the methods include silanes that have bulky alkoxy groups as well as SiH groups. Examples of such silanes used in the methods including di-tert-pentoxysilane, di-tert-butoxysilane and silanes having the formula (H)2Si(OR)(OR1) wherein R is tert-butyl and R1 is selected from the group consisting of methyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, pentyl, isopentyl, tert-pentyl and hexyl.
    Type: Grant
    Filed: February 28, 2014
    Date of Patent: November 22, 2016
    Assignee: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Manchao Xiao, Xinjian Lei, Bing Han, Mark Leonard O'Neill
  • BORON-CONTAINING COMPOUNDS, COMPOSITIONS, AND METHODS FOR THE DEPOSITION OF A BORON CONTAINING FILMS
    Publication number: 20160293410
    Abstract: Described herein are boron-containing precursor compounds, and compositions and methods comprising same, for forming boron-containing films. In one aspect, the film is deposited from at least one precursor having the following Formula I or II described herein.
    Type: Application
    Filed: March 24, 2016
    Publication date: October 6, 2016
    Applicant: Air Products and Chemicals, Inc.
    Inventors: Xinjian Lei, Moo-Sung Kim
  • High temperature atomic layer deposition of silicon oxide thin films
    Patent number: 9460912
    Abstract: Composition(s) and atomic layer deposition (ALD) process(es) for the formation of a silicon oxide containing film at one or more deposition temperature of about 500° C. is disclosed. In one aspect, the composition and process use one or more silicon precursors selected from compounds having the following formulae I, II, described and combinations thereof R1R2mSi(NR3R4)nXp; and??I. R1R2mSi(OR3)n(OR4)qXp.
    Type: Grant
    Filed: April 5, 2013
    Date of Patent: October 4, 2016
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Haripin Chandra, Meiliang Wang, Manchao Xiao, Xinjian Lei, Ronald Martin Pearlstein, Mark Leonard O'Neill, Bing Han
  • Compositions and processes for depositing carbon-doped silicon-containing films
    Patent number: 9447287
    Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3?x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3?x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).
    Type: Grant
    Filed: June 1, 2012
    Date of Patent: September 20, 2016
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Manchao Xiao, Xinjian Lei, Ronald Martin Pearlstein, Haripin Chandra, Eugene Joseph Karwacki, Jr., Bing Han, Mark Leonard O'Neill
  • Splashguard and inlet diffuser for high vacuum, high flow bubbler vessel
    Patent number: 9435027
    Abstract: The present invention is a bubbler having a diptube inlet ending in a bubble size reducing outlet and at least one baffle disc positioned between the outlet of the diptube and the outlet of the bubbler to provide a narrow annular space between the baffle disc and the wall of the bubbler to prevent liquid droplets from entering the outlet to the bubbler. The bubble size reducing outlet is an elongated cylindrical porous metal frit situated in a sump of approximately the same dimensions. A metal frit is placed at the inlet of the outlet of the bubbler. The present invention is also a process of delivering a chemical precursor from a bubbler vessel having the above structure.
    Type: Grant
    Filed: March 12, 2014
    Date of Patent: September 6, 2016
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Charles Michael Birtcher, Thomas Andrew Steidl, Xinjian Lei
  • BISAMINOALKOXYSILANE COMPOUNDS AND METHODS FOR USING SAME TO DEPOSIT SILICON-CONTAINING FILMS
    Publication number: 20160237100
    Abstract: Bisaminoalkoxysilanes of Formula I, and methods using same, are described herein: R1Si(NR2R3)(NR4R5)OR6??I where R1 is selected from hydrogen, a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, a C4 to C10 aromatic hydrocarbon group; R2, R3, R4, and R5 are each independently selected from hydrogen, a C4 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group; R6 is selected from a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C2 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group.
    Type: Application
    Filed: February 8, 2016
    Publication date: August 18, 2016
    Applicant: Air Products and Chemicals, Inc.
    Inventors: Daniel P. Spence, Xinjian Lei, Ronald Martin Pearlstein, Manchao Xiao, Jianheng Li
  • METHOD AND PRECURSORS FOR MANUFACTURING 3D DEVICES
    Publication number: 20160225616
    Abstract: Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.
    Type: Application
    Filed: September 30, 2015
    Publication date: August 4, 2016
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Jianheng Li, Robert Gordon Ridgeway, Xinjian Lei, Raymond Nicholas Vrtis, Bing Han, Madhukar Bhaskara Rao
  • METHODS FOR DEPOSITING FILMS WITH ORGANOAMINODISILANE PRECURSORS
    Publication number: 20160203975
    Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.
    Type: Application
    Filed: March 18, 2016
    Publication date: July 14, 2016
    Applicant: Air Products and Chemicals, Inc.
    Inventors: Manchao Xiao, Xinjian Lei, Daniel P. Spence, Haripin Chandra, Bing Han, Mark Leonard O'Neill, Steven Gerard Mayorga, Anupama Mallikarjunan
  • ORGANOAMINOSILANES AND METHODS FOR MAKING SAME
    Publication number: 20160168169
    Abstract: Organoaminosilanes, such as without limitation di-iso-propylaminosilane (DIPAS), are precursors for the deposition of silicon containing films such as silicon-oxide and silicon-nitride films. Described herein are methods to make organoaminosilane compounds, or other compounds such as organoaminodisilanes and organoaminocarbosilanes, via the catalytic hydrosilylation of an imine by a silicon source comprising a hydridosilane.
    Type: Application
    Filed: December 2, 2015
    Publication date: June 16, 2016
    Applicant: Air Products and Chemicals, Inc.
    Inventors: Manchao Xiao, Matthew R. MacDonald, Richard Ho, Xinjian Lei
  • Methods for depositing films with organoaminodisilane precursors
    Patent number: 9337018
    Abstract: A method for forming a silicon-containing film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the method comprising: providing the at least one surface of the substrate in a reaction chamber; introducing at least one organoaminodisilane precursor comprising a Si—N bond, a Si—Si bond, and a Si—H3 group represented by the following Formula I below: wherein R1 and R2 are defined herein; and introducing a nitrogen-containing source into the reactor wherein the at least one organoaminodisilane precursor and the nitrogen-containing source react to form the film on the at least one surface.
    Type: Grant
    Filed: May 24, 2013
    Date of Patent: May 10, 2016
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Manchao Xiao, Xinjian Lei, Daniel P. Spence, Haripin Chandra, Bing Han, Mark Leonard O'Neill, Steven Gerard Mayorga, Anupama Mallikarjunan
  • SILICON-BASED FILMS AND METHODS OF FORMING THE SAME
    Publication number: 20160122869
    Abstract: Disclosed herein are containing silicon-based films and compositions and methods for forming the same. The silicon-based films contain <50 atomic % of silicon. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 0 to about 55, y is about 35 to about 100, and z is about 0 to about 50 atomic weight (wt.) percent (%) as measured by XPS. In another aspect, the silicon-based films were deposited using at least one organosilicon precursor comprising two silicon atoms, at least one Si-Me group, and an ethylene or propylene linkage between the silicon atoms such as 1,4-disilapentane.
    Type: Application
    Filed: October 27, 2015
    Publication date: May 5, 2016
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Xinjian Lei, Anupama Mallikarjunan, Matthew R. MacDonald, Manchao Xiao
  • METHOD OF MAKING A MULTICOMPONENT FILM
    Publication number: 20160087207
    Abstract: Described herein is a method and precursor composition for depositing a multicomponent film. In one embodiment, the method and composition described herein is used to deposit a germanium-containing film such as Germanium Tellurium, Antimony Germanium, and Germanium Antimony Tellurium (GST) films via an atomic layer deposition (ALD) and/or other germanium, tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. In this or other embodiments, the Ge precursor used comprises trichlorogermane.
    Type: Application
    Filed: November 13, 2015
    Publication date: March 24, 2016
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Xinjian Lei, Moo-Sung Kim
  • ALKOXYAMINOSILANE COMPOUNDS AND APPLICATIONS THEREOF
    Publication number: 20160083847
    Abstract: Alkoxyaminosilane compound having formula I, and processes and compositions for depositing a silicon-containing film, are described herein: (R1R2)NSiR3OR4OR5 ??Formula (I) wherein R1 is independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group; R2 and R3 are each independently selected from hydrogen; a linear or branched C1 to C10 alkyl group; a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group; and R4 and R5 are each independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group.
    Type: Application
    Filed: November 13, 2015
    Publication date: March 24, 2016
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Daniel P. Spence, Xinjian Lei, Ronald Martin Pearlstein, Manchao Xiao, Richard Ho
  • METHOD AND COMPOSITION FOR PROVIDING PORE SEALING LAYER ON POROUS LOW DIELECTRIC CONSTANT FILMS
    Publication number: 20160049293
    Abstract: Described herein is a method and composition comprising same for sealing the pores of a porous low dielectric constant (“low k”) layer by providing an additional thin dielectric film, referred to herein as a pore sealing layer, on at least a surface of the porous, low k layer to prevent further loss of dielectric constant of the underlying layer. In one aspect, the method comprises: contacting a porous low dielectric constant film with at least one organosilicon compound to provide an absorbed organosilicon compound and treating the absorbed organosilicon compound with ultraviolet light, plasma, or both, and repeating until a desired thickness of the pore sealing layer is formed.
    Type: Application
    Filed: August 7, 2015
    Publication date: February 18, 2016
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Jianheng Li, Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Xinjian Lei, Mark Leonard O'Neill, Xuezhong Jiang
  • Methods of forming non-oxygen containing silicon-based films
    Patent number: 9243324
    Abstract: Methods for forming non-oxygen containing silicon-based films, that contain >50 atomic % of silicon, are provided herein. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiH3 groups with at least one C2-3 linkage between silicon atoms such as 1,4-disilabutane.
    Type: Grant
    Filed: July 24, 2013
    Date of Patent: January 26, 2016
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Heather Regina Bowen, Jianheng Li, Mark Leonard O'Neill, Manchao Xiao, Andrew David Johnson, Xinjian Lei
  • Organoaminosilanes and methods for making same
    Patent number: 9233990
    Abstract: Organoaminosilanes, such as without limitation di-iso-propylaminosilane (DIPAS), are precursors for the deposition of silicon containing films such as silicon-oxide and silicon-nitride films. Described herein are methods to make organoaminosilane compounds, or other compounds such as organoaminodisilanes and organoaminocarbosilanes, via the catalytic hydrosilylation of an imine by a silicon source comprising a hydridosilane.
    Type: Grant
    Filed: February 18, 2015
    Date of Patent: January 12, 2016
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Manchao Xiao, Matthew R. MacDonald, Richard Ho, Xinjian Lei
  • Alkyl-Alkoxysilacyclic Compounds and Methods for Depositing Films Using Same
    Publication number: 20150364321
    Abstract: A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising an alkyl-alkoxysilacyclic compound, and a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 2.7 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.
    Type: Application
    Filed: June 5, 2015
    Publication date: December 17, 2015
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jianheng Li, William Robert Entley, Jennifer Lynn Anne Achtyl, Xinjian Lei
  • Method of making a multicomponent film
    Patent number: 9214630
    Abstract: Described herein is a method and precursor composition for depositing a multicomponent film. In one embodiment, the method and composition described herein is used to deposit a germanium-containing film such as Germanium Tellurium, Antimony Germanium, and Germanium Antimony Tellurium (GST) films via an atomic layer deposition (ALD) and/or other germanium, tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. In this or other embodiments, the Ge precursor used comprises trichlorogermane.
    Type: Grant
    Filed: April 4, 2014
    Date of Patent: December 15, 2015
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Manchao Xiao, Iain Buchanan, Moo-Sung Kim, Sergei Vladimirovich Ivanov, Xinjian Lei, Cheol Seong Hwang, Taehong Gwon
  • Alkoxyaminosilane compounds and applications thereof
    Patent number: 9200167
    Abstract: Alkoxyaminosilane compounds having formula I, and processes and compositions for depositing a silicon-containing film, are described herein: (R1R2)NSiR3OR4OR5??Formula (I) wherein R1 is independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group; R2 and R3 are each independently selected from hydrogen; a linear or branched C1 to C10 alkyl group; a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group; and R4 and R5 are each independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group.
    Type: Grant
    Filed: January 18, 2013
    Date of Patent: December 1, 2015
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Daniel P. Spence, Ronald Martin Pearlstein, Xinjian Lei, Manchao Xiao, Richard Ho, Mark Leonard O'Neill, Haripin Chandra
  • COMPOSITIONS AND METHODS FOR THE DEPOSITION OF SILICON OXIDE FILMS
    Publication number: 20150275355
    Abstract: Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one precursor having the following formula: R1nSi(NR2R3)mH4-m-n wherein R1 is independently selected from a linear C1 to C6 alkyl group, a branched C2 to C6 alkyl group, a C3 to C6 cyclic alkyl group, a C2 to C6 alkenyl group, a C3 to C6 alkynyl group, and a C4 to C10 aryl group; wherein R2 and R3 are each independently selected from hydrogen, a C1 to C6 linear alkyl group, a branched C2 to C6 alkyl group, a C3 to C6 cyclic alkyl group, a C2 to C6 alkenyl group, a C3 to C6 alkynyl group, and a C4 to C10 aryl group, wherein R2 and R3 are linked or, are not linked, to form a cyclic ring structure; n=1, 2, 3; and m=1, 2.
    Type: Application
    Filed: March 18, 2015
    Publication date: October 1, 2015
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Anupama Mallikarjunan, Haripin Chandra, Manchao Xiao, Xinjian Lei, Kirk Scott Cuthill, Mark Leonard O'Neill