Patents by Inventor Xinjian Lei

Xinjian Lei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Carbon bridged aminosilane compounds for high growth rate silicon-containing films
    Patent number: 10464953
    Abstract: Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one precursor, wherein the at least one precursor has a structure represented by Formula A: wherein R, R1, R2, R3, R4, and R5 are defined herein.
    Type: Grant
    Filed: October 4, 2017
    Date of Patent: November 5, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Meiliang Wang, Xinjian Lei, Manchao Xiao, Suresh Kalpatu Rajaraman
  • Precursors and flowable CVD methods for making low-K films to fill surface features
    Patent number: 10468244
    Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about ?20° C. to about 400° C.; introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.
    Type: Grant
    Filed: August 18, 2017
    Date of Patent: November 5, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Jianheng Li, Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Manchao Xiao, Xinjian Lei
  • Organoaminosilane precursors and methods for depositing films comprising same
    Patent number: 10460929
    Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.
    Type: Grant
    Filed: April 5, 2017
    Date of Patent: October 29, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Mark Leonard O'Neill, Manchao Xiao, Xinjian Lei, Richard Ho, Haripin Chandra, Matthew R. MacDonald, Meiliang Wang
  • Organoaminosilane precursors and methods for depositing films comprising same
    Patent number: 10453675
    Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.
    Type: Grant
    Filed: September 11, 2014
    Date of Patent: October 22, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Mark Leonard O'Neill, Manchao Xiao, Xinjian Lei, Richard Ho, Haripin Chandra, Matthew R. MacDonald, Meiliang Wang
  • Monoorganoaminodisilane Precursors and Methods for Depositing Films Comprising Same
    Publication number: 20190318925
    Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: as described herein.
    Type: Application
    Filed: April 3, 2019
    Publication date: October 17, 2019
    Applicant: Versum Materials US, LLC
    Inventors: Xinjian Lei, Meiliang Wang, Madhukar B. Rao
  • Spin-On Metallization
    Publication number: 20190309422
    Abstract: Described herein are the depositions of conductive metallic films on a surface which contains topography. The deposition uses a metallic precursor comprises a neutral (uncharged) metal compound in which the metal atom is in the zerovalent state and stabilized by ligands which are stable as uncharged, volatile species.
    Type: Application
    Filed: March 26, 2019
    Publication date: October 10, 2019
    Applicant: Versum Materials US, LLC
    Inventors: Alan C. Cooper, Sergei V. Ivanov, Hongbo Li, Ronald Martin Pearlstein, Xinjian Lei
  • Method and Precursors for Manufacturing 3D Devices
    Publication number: 20190304775
    Abstract: Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.
    Type: Application
    Filed: June 4, 2019
    Publication date: October 3, 2019
    Applicant: Versum Materials US, LLC
    Inventors: Jianheng Li, Robert G. Ridgeway, Xinjian Lei, Raymond N. Vrtis, Bing Han, Madhukar Rao
  • Volatile dihydropyrazinly and dihydropyrazine metal complexes
    Publication number: 20190292659
    Abstract: A composition comprising dihydropyrazinyl anions that can be coordinated as 6 electron ligands to a broad range of different metals to yield volatile metal complexes for ALD and CVD depositions are described herein. Also described herein are undeprotonated dihydropyrazines that can coordinate to metals as stabilizing neutral ligands. In one embodiment, the composition is used for the direct liquid injection delivery of the metal dihydropyrazinyl complex precursor to the chamber of an ALD or CVD chamber for the deposition of metal-containing thin films such as, for example, ruthenium or cobalt metal films.
    Type: Application
    Filed: May 8, 2019
    Publication date: September 26, 2019
    Applicant: Versum Materials US, LLC
    Inventors: John Anthony Thomas Norman, Sergei Vladimirovich Ivanov, Xinjian Lei
  • COMPOSITIONS AND METHODS USING SAME FOR DEPOSITION OF SILICON-CONTAINING FILM
    Publication number: 20190292658
    Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound having Formula I or II described herein.
    Type: Application
    Filed: December 21, 2016
    Publication date: September 26, 2019
    Inventors: Jianheng Li, Xinjian Lei, Robert Gordon Ridgeway, Raymond Nicholas Vrtis, Manchao Xiao, Richard Ho
  • Bisaminoalkoxysilane compounds and methods for using same to deposit silicon-containing films
    Patent number: 10421766
    Abstract: Bisaminoalkoxysilanes of Formula I, and methods using same, are described herein: R1Si(NR2R3)(NR4R5)OR6??I where R1 is selected from hydrogen, a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, a C4 to C10 aromatic hydrocarbon group; R2, R3, R4, and R5 are each independently selected from hydrogen, a C4 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group; R6 is selected from a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C2 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group.
    Type: Grant
    Filed: February 8, 2016
    Date of Patent: September 24, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Daniel P. Spence, Xinjian Lei, Ronald Martin Pearlstein, Manchao Xiao, Jianheng Li
  • Silicon-based films and methods of forming the same
    Patent number: 10422034
    Abstract: Disclosed herein are containing silicon-based films and compositions and methods for forming the same. The silicon-based films contain <50 atomic % of silicon. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 0 to about 55, y is about 35 to about 100, and z is about 0 to about 50 atomic weight (wt.) percent (%) as measured by XPS. In another aspect, the silicon-based films were deposited using at least one organosilicon precursor comprising two silicon atoms, at least one Si-Me group, and an ethylene or propylene linkage between the silicon atoms such as 1,4-disilapentane.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: September 24, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Xinjian Lei, Anupama Mallikarjunan, Matthew R. MacDonald, Manchao Xiao
  • Compositions and Processes for Depositing Carbon-Doped Silicon-Containing Films
    Publication number: 20190287798
    Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of R8N(SiR9LH)2, wherein R8, R9, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).
    Type: Application
    Filed: April 29, 2019
    Publication date: September 19, 2019
    Applicant: Versum Materials US, LLC
    Inventors: Manchao Xiao, Xinjian Lei, Ronald Martin Pearlstein, Haripin Chandra, Eugene Joseph Karwacki, Bing Han, Mark Leonard O'Neill
  • Compositions and Methods Using Same for Deposition of Silicon-Containing Films
    Publication number: 20190271075
    Abstract: Described herein are methods and compositions for forming a silicon-containing film or material such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film in a semiconductor deposition process, such as without limitation, a plasma enhanced atomic layer deposition of silicon-containing film.
    Type: Application
    Filed: April 18, 2019
    Publication date: September 5, 2019
    Applicant: Versum Materials US, LLC
    Inventors: Xinjian Lei, Moo-Sung Kim, Matthew R. MacDonald, Manchao Xiao
  • Alkyl-alkoxysilacyclic compounds
    Patent number: 10395920
    Abstract: A method and composition for producing a low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising a silacyclic compound, and a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 2.7 or less.
    Type: Grant
    Filed: February 6, 2018
    Date of Patent: August 27, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jianheng Li, William Robert Entley, Jennifer Lynn Anne Achtyl, Xinjian Lei
  • Organoamino-Functionalized Cyclic Oligosiloxanes for Deposition of Silicon-Containing Films
    Publication number: 20190233446
    Abstract: Organoamino-functionalized cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the organoamino-functionalized cyclic oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized cyclic oligosiloxanes are also disclosed.
    Type: Application
    Filed: April 5, 2019
    Publication date: August 1, 2019
    Applicant: Versum Materials US, LLC
    Inventors: Matthew R. MacDonald, Xinjian Lei, Manchao Xiao, Meiliang Wang
  • Alkoxysilylamine Compounds and Applications Thereof
    Publication number: 20190225377
    Abstract: Described herein is an FCVD process for depositing a silicon-containing film from at least one alkoxysilylamine precursor having the following Formulae A and B: wherein R1 and R4 are independently selected from a linear or branched C1 to C10 alkyl group, a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group and wherein R2, R3, R4, R5, and R6 are independently selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, a C2 to C12 alkenyl group, a C2 to C12 alkynyl group, a C4 to C10 cyclic alkyl, a C6 to C10 aryl group, and a linear or branched C1 to C10 alkoxy group.
    Type: Application
    Filed: March 15, 2019
    Publication date: July 25, 2019
    Applicant: Versum Materials US, LLC
    Inventors: Manchao Xiao, Ronald Martin Pearlstein, Richard Ho, Daniel P. Spence, Xinjian Lei
  • Method and precursors for manufacturing 3D devices
    Patent number: 10354860
    Abstract: Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: July 16, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Jianheng Li, Robert Gordon Ridgeway, Xinjian Lei, Raymond Nicholas Vrtis, Bing Han, Madhukar Bhaskara Rao
  • High Temperature Atomic Layer Deposition of Silicon Oxide Thin Films
    Publication number: 20190189431
    Abstract: Atomic layer deposition (ALD) process formation of silicon oxide with temperature>500° C. is disclosed.
    Type: Application
    Filed: January 23, 2019
    Publication date: June 20, 2019
    Applicant: Versum Materials US, LLC
    Inventors: Haripin Chandra, Meiliang Wang, Manchao Xiao, Xinjian Lei, Ronald Martin Pearlstein, Mark Leonard O'Neill
  • Barrier materials for display devices
    Patent number: 10319862
    Abstract: Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350° C. or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9 g/cm3 or greater; a hydrogen content of about 4×1022 cm?3 or less, and a transparency of about 90% or greater at 400-700 nm as measured by a UV-visible light spectrometer.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: June 11, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Robert Gordon Ridgeway, Andrew David Johnson, Anupama Mallikarjunan, Raymond Nicholas Vrtis, Xinjian Lei, Mark Leonard O'Neill, Manchao Xiao, Jianheng Li, Michael T. Savo
  • Compositions and processes for depositing carbon-doped silicon-containing films
    Patent number: 10319584
    Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).
    Type: Grant
    Filed: August 10, 2016
    Date of Patent: June 11, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Manchao Xiao, Xinjian Lei, Ronald Martin Pearlstein, Haripin Chandra, Eugene Jospeh Karwacki, Jr., Bing Han, Mark Leonard O'Neill